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    THOMSON-CSF RM CASE Search Results

    THOMSON-CSF RM CASE Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CS-DSDMDB09MF-010 Amphenol Cables on Demand Amphenol CS-DSDMDB09MF-010 9-Pin (DB9) Deluxe D-Sub Cable - Copper Shielded - Male / Female 10ft Datasheet
    CS-DSDMDB15MF-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB15MF-002.5 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Female 2.5ft Datasheet
    CS-DSDMDB15MM-025 Amphenol Cables on Demand Amphenol CS-DSDMDB15MM-025 15-Pin (DB15) Deluxe D-Sub Cable - Copper Shielded - Male / Male 25ft Datasheet
    CS-DSDMDB25MM-010 Amphenol Cables on Demand Amphenol CS-DSDMDB25MM-010 25-Pin (DB25) Deluxe D-Sub Cable - Copper Shielded - Male / Male 10ft Datasheet
    CS-DSDMDB37MM-002.5 Amphenol Cables on Demand Amphenol CS-DSDMDB37MM-002.5 37-Pin (DB37) Deluxe D-Sub Cable - Copper Shielded - Male / Male 2.5ft Datasheet

    THOMSON-CSF RM CASE Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TXAL 2215 B

    Abstract: txal TXAL3815 triacs btb 15 700 TXAL2210 BTA12-700 TYAL2215 TYAL3815 txal*2215 BTA12-400
    Text: o triacs triacs THOMSON-CSF Types V 10 A rm s / TCOT9 = 75°C 12 A rm s / Tease = Uninsulated Insulated BTA12-200 BTB12-200 BTA12-400 BTB12-400 BTB12-700 BTA12-700 With sufi ixes B,C 110°C 75°C X i CO I2t Im A ) 1 II + + + — Tj = M B C I2t = 110°C 125


    OCR Scan     		PDF BTA10-400 BTB10-200 BTB10-400 BTB10-700 TXAL2210 TXAL3810 TYAL2210 TYAL3810 BTB16-200 BTB16400 TXAL 2215 B txal TXAL3815 triacs btb 15 700 BTA12-700 TYAL2215 TYAL3815 txal*2215 BTA12-400

    TY508

    Abstract: tyn 510 TYN 125 2N1777 Ty 8010 2N1778 ty 408 2N1774 tyn 5 -20/triac TY 5007
    Text: o thyristors < 80 Arms thyristors < 80 Aeff THOMSON-CSF T am b = 25°C >RM @ V r r m Types >0 Vr r m •t s m 10 ms Id m @ V d r m V d RM A (V) 7,4 Arms / TcaSe = 75°C TM TM TM TM TM TM TM TM 507 1007 2007 3007 4007 5007 6007 8007 8 Arms N TYN TYN TYN TYN


    OCR Scan     		PDF 2N2619 508-TY 510-TY TY508-TY8008 TY508 tyn 510 TYN 125 2N1777 Ty 8010 2N1778 ty 408 2N1774 tyn 5 -20/triac TY 5007

    esm diodes

    Abstract: ESM 470 esm 30 450 v ESM 650 esm 112-39 esm 200 cb33 p 112220 112180 esm 112 390
    Text: clamping zener diodes diodes zener ecreteuses THOMSON-CSF V BR * 'RM @ V rivi Unidirectional types 1mA) 4 KW ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM ESM 111-15 111-18 111-22 111-27 111-33 111-39 111-47 111-56 111-68 111-82


    OCR Scan     		PDF 300/ts CB-150 CB-34) esm diodes ESM 470 esm 30 450 v ESM 650 esm 112-39 esm 200 cb33 p 112220 112180 esm 112 390

    A-M8

    Abstract: TYP-512
    Text: thyristors for overvoltage protection thyristors de protection THOMSON-CSF <A/ms dv/dt« @ V DRNI min V/jus) 100 10 Tamb = 25°C VRRM Types (A) V d RM (V) >TSM (A) Ir M * @ V r r m •d m * @ v D R M max ImAI 12 Arms / Tease = 75°C Tj = 125°C TYP 212


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    btw 50 200

    Abstract: BTW 600 TR-8010 TYN616 TYN116 BTW39-500 tr 28 tyn 682 TYN416 tyn 5
    Text: thyristors < 80 Arms thyristors < 80 Aeff THOMSON-CSF Tamb = 25°C Typas •o VRRM ■ tsm 10 ms V DRM A 16 Arms N N N TYN TYN TYN TYN TYN (V) / Tcase = 75°C 0516 116 216 416 616 Tj = 125°C 50 100 200 400 600 10 (A) |RM @ V r r m ' d m @ VDRM Tj max max


    OCR Scan     		PDF BTW39- btw 50 200 BTW 600 TR-8010 TYN616 TYN116 BTW39-500 tr 28 tyn 682 TYN416 tyn 5

    BRY 300

    Abstract: BRY 55 A BRY 55 200 bry 55 2N883 BRY 100 2N877 2N878 TD5001 2N880
    Text: sensitive gate thyristors thyristors sensibles THOMSON-CSF dv/dt Tam b = 25°C Types •o ■RM @ V r r m d m @ Vd r m Vq t Vr r m ■ tsm ■ Tj max 10 ms V DRM A (V) 0,5 A rm s / Tease = 85°C 2N877 2N878 2N879 2N880 2N881 2N882 2N883 0,5 A im s / Tease = 75°C


    OCR Scan     		PDF 2N877 2N878 2N879 2N880 2N881 2N882 2N883 CB-971 ICB-2741 BRY 300 BRY 55 A BRY 55 200 bry 55 BRY 100 TD5001

    A1N4001

    Abstract: BYW 62 CB-210 F126 A1N645 diodes byw Diodes de redressement
    Text: rectifier diodes < 100 A diodes de redressement < 100 A Types •o Vr rm A (V) THOMSON-CSF / «F >FSM vF (A) «V) (A) 1 0,2 10 ms max 200 m A / Tam b = 25°C M 1 2 -F R 34 M 22 M 42 M 62 M 82 M 102 M 14 A1N645 1N 64 6 A1N647 1N 64 8 A 1 N 64 9 0,4 100 200


    OCR Scan     		PDF M12-FR A1N645 A1N647 CB-26) CB-126) A1N4001 CB-210) BYW 62 CB-210 F126 diodes byw Diodes de redressement

    TY6004

    Abstract: TY504 TYN 6004 TYN 125 tyn 5 BRY 300 TY 6004 tyn 604 n TYN604 TL4006
    Text: thyristors < 80 Arms thyristors < 80 A eff THOMSON-CSF Tam b = 25 ° C Types T L 1003 T L 2003 T L 4003 T L 6003 T L 8003 •o Vrrm = V D RM ■t s m 10 m s ■rm @ v r r m ■dm @ V d r m Tj m ax A (V) (A) m ax (m A) 1 100 200 400 600 800 70 2 dv/dt @ 67% V d r iv i


    OCR Scan     		PDF TL1003 CB-274I TY6004 TY504 -TY6004 TY504 TYN 6004 TYN 125 tyn 5 BRY 300 TY 6004 tyn 604 n TYN604 TL4006

    P8021

    Abstract: 100-C RM14A
    Text: STC D 1 I TTE'iEB? G G G 2 1 Ö S S G S—THOMSON 59C 0 2 1 8 5 _ C THOMSON“CSF D J ~ ' <>5 - ¿ y BYT 67-800^1000, R DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH VOLTAGE FAST RECOVERY RECTIFIERS RED R ESSEU RS RAPIDES HAUTE TENSION ADVANCE INFORMATION


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    PZD160

    Abstract: PZD16 QQD2711 IR diodes 0B thomson transil
    Text: SñC D I 7 ^ 2 ^ 3 7 S G S— T H O M S O N 5 9 C 02 70 9 ^ THOMSON*CSF □ □ □ 2 7 0 ti ñ | DT -//JL3 P Z D 16—►PZD160 DIVISION SEMICONDUCTEURS BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSORS DIODES DB PROTECTION BIDIRECTIONNELLES TRANSIL Pp : 700 W/1 ms expo.


    OCR Scan     		PDF 712T23? PZD16â PZD160 kW/8-20 -110V PZD160 PZD16 QQD2711 IR diodes 0B thomson transil

    bd 142 transistor

    Abstract: BD142 bd 142 transistor bf 454
    Text: BD 142 NPN SILICON TRANSISTOR, HOMOBASE T R A N S IS T O R N P N S IL IC IU M , H O M O B A S E - LF large signal power amplification Am plificateur B F grands signaux de puissance Dissipation derating Case TO-3 Variation de dissipation B o îtie r v CEO 45 V


    OCR Scan     		PDF CB-19 468n2 bd 142 transistor BD142 bd 142 transistor bf 454

    LT 238

    Abstract: BD 238 BD234
    Text: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


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    esm 117

    Abstract: ESM218 TRANSISTORS SILICIUM, BASE EPITAXIEE
    Text: ESM 217 ESM 218 NPN SILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS SILIC IU M D ARLIN G TO N NPN, BASE EPITAXfEE Compl. o f ESM 2 6 1 ,2 6 2 P R E L IM IN A R Y D A TA NOTICE P R E LIM IN A IR E Monolithic construction Construction m onolithique


    OCR Scan     		PDF O-220 drawingCB-117on CB-117 100mA 300/JS esm 117 ESM218 TRANSISTORS SILICIUM, BASE EPITAXIEE

    2N1208

    Abstract: 2N1209 h21e CB-69 1208
    Text: NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA 2N 1209 TRANSISTORS NPN SILIC IU M , MESA DIFFUSES • LF large signal amplification A m plification BF grands signaux - High current switching V CEO 60 V 45 V •c 5 A Commutation fo r t courant 85 W


    OCR Scan     		PDF CB-69 14f4g 2N1208 2N1209 h21e 1208

    IR 436

    Abstract: bf 434 amplificateur FT 434 512-BD deflexion vertical tv deflexion BD436
    Text: BD 434 BD 436 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS S IL IC IU M PNP, BASE E P ITAXIES Compì, of BD 433, 435 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


    OCR Scan     		PDF

    amplificateur

    Abstract: vertical tv deflexion BD233 bo236 BD NPN transistors bd 233 bd 237
    Text: NPN SILICON TRANSISTORS, E P IT A X IA L BASE BD 233 TRANSISTORS SILICIUM NPN, BASE EPITAXIEE gg 2 .3 5 BD 237 Compl. o f BD 234, BO 236, BD 238 P R E LIM IN A R Y D A T A NOTICE PRELIMINAIRE These transistors are intended fo r complemen­ ta ry or quasi complementary sym etry amplifiers :


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    diode byw 81 200

    Abstract: Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F
    Text: S G S-THOMSQN : SIC D THOMSON*CSF o DIVISION SEMICONOUCTÏURS DISCRETS TTETEB? QGQEEMt. BYW 81-50—200, R BYW 81-150 A . (R) SUPERSWITCH HIGH E FF IC IE N C Y FA ST R EC O V ERY R E C T IF IE R S REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY


    OCR Scan     		PDF Iat100Â diode byw 81 200 Diode BYW 59 Diode BYW 56 diode BYW 66 Q002 ANTENA 8150 diode diode BYW diode BYW 81 diode P2F

    Diode BYW 56

    Abstract: 0224S diode BYW 19 2791T byw+36+v
    Text: S G S-THOMSQN SIC D o THOMSON*CSF BYW 81-50—200, R BYW 81-150 A. (R) DIVISION SEMICONOUCTÏURS DISCRETS : TTETEB? QGQEEMt. SUPERSWITCH HIGH EFFICIENCY FAST RECOVERY RECTIFIERS REDRESSEURS RAPIDES A H A U T RENDEMENT 59C 022^6 HIGH EFFICIENCY SUPER SWITCH


    OCR Scan     		PDF 1200C REDRE08 CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 Diode BYW 56 0224S diode BYW 19 2791T byw+36+v

    ESM214

    Abstract: ESM213 ESM259 EST 213
    Text: ESM 213 ESM 214 NPN S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TR AN S IS TO R S D A R L IN G T O N S IL IC IU M N P N , B A S E E P IT A X IE E Compì, o f ESM 259, 260 P R E L IM IN A R Y D A TA N O T IC E P R E L IM IN A IR E


    OCR Scan     		PDF T0-220 drawingCB-117on CB-117 ESM214 ESM213 ESM259 EST 213

    bu126

    Abstract: No abstract text available
    Text: BU 126 N P N S IL IC O N T R A N S IS T O R , T R IP L E D IF F U S E D M E S A T R A N S IS T O R S I L I C I U M N P N , M E S A T R IP L E D IF F U S E P R E L IM IN A R Y D A T A N O T IC E P R E L / M I N A I R E T h e BU 1 2 6 ty p e is a fast high voltage transis­


    OCR Scan     		PDF 15/us CB-19 bu126

    2N2824

    Abstract: 2N2823 C356 Scans-0010254 ft06 2N282
    Text: *2 I\I2 8 2 3 *2 I\I 2824 * 2 I\I 2825 NPN S IL IC O N T R A N S IS T O R S , D IF F U S E D M E S A T R A N S IS T O R S N P N S IL I C I U M . M E S A D IF F U S E S ïfc P re fe rre d d evice D is p o s itif reco m m a n d é • L F large signal a m p lifica tio n


    OCR Scan     		PDF 2I\I2823 CB-70 2N2824 2N2823 C356 Scans-0010254 ft06 2N282

    2n3740

    Abstract: 2N3741
    Text: *2 I\I 3740 * 2 N 3741 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS PNP S IL IC IU M , BASE E P IT A X IE S ^ Preferred device Dispositif recommandé • LF large signal power amplification A m p lifica tio n B F grands signaux de puissance Í -6 0 V


    OCR Scan     		PDF CB-72 2n3740 2N3741

    BD 468 S

    Abstract: bj 170 BD170
    Text: PNP SILICON TRANSISTORS, EP ITAXIAL BASE BG166 T R A N S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E g Q - |g g BD 170 Compl.of BD 165, BD 167, BD 169 PR E LIM IN A R Y DATA N O T IC E P R E L IM IN A IR E These transistors are intended for complemen­


    OCR Scan     		PDF J-60V BD 468 S bj 170 BD170

    2N6109

    Abstract: 2N6107 2N6111 PNP 2n series an 6107 2N 6107 ZA2N
    Text: 2N 6107 2N 6109 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SILIC IU M PNP, BASE E PITAXIEE 2N 6111 Compì, of 2N 5490 series PR E LIM IN A R Y DATA N O T IC E P R E L IM IN A IR E • LF large signal power amplification Am plification B F grands signaux de puissance


    OCR Scan     		PDF CB-117on CB-117 2N6109 2N6107 2N6111 PNP 2n series an 6107 2N 6107 ZA2N