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    THOMSON-CSF PLASTIC POWER TRANSISTORS Search Results

    THOMSON-CSF PLASTIC POWER TRANSISTORS Result Highlights (6)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    THOMSON-CSF PLASTIC POWER TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    THOMSON-CSF plastic power transistors

    Abstract: bu bdx 64 bdx 330 BUV37 BDV65 BDV64 CB285 BDV67 BDX33 BDX53
    Text: 1y plastic power transistors transistors de puissance plastiques THOMSON-CSF Type •c v CEO VCEX* cont <V A) Ptot PNP NPN (W) H21E / ■c *VC E = 1 £ V max min (A) V C E(sat)/ >C ! >B max (V) (A) (A) td + tr •max typ fcl») general purpose darlingtons


    OCR Scan     		PDF BDX53 BDX33 O-224 O-22CIAB CB-117 BUV37 CB-244 CB-285 THOMSON-CSF plastic power transistors bu bdx 64 bdx 330 BUV37 BDV65 BDV64 CB285 BDV67

    BD 139 140

    Abstract: bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117
    Text: plastic power transistors c transistors de puissance plastiques THOMSON-CSF Type v CEO •c Ptot h 2iE / 1C VCE sat / >C / >B NPN | min PNP (V) (A) max (W) max (V) (A) I | (A) (A) high speed transistors 2N 5296 *s tf *t typ* max max max M (ws ) min (M Hz)


    OCR Scan     		PDF O-I26 CB-16 /TO-202 CB-203 CB-244 BD 139 140 bo 135 BD NPN transistors bo 139 BO 829 B0707 b0709 BD304 B0907 CB-117

    J165

    Abstract: BD167 bf 169 BD 166, 168, 170
    Text: BD 165 BD 167 BD 169 NPN SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SIL IC IU M NPN, BASE EPITAXIES Compì. BD 166, BD 168, BD 170 PR E LIM IN A R Y DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


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    BO 241 A

    Abstract: bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410
    Text: BD 241, BD 241 A BD 241B. BD 241C NPN SILICON TRANSISTORS, EP ITAXIAL BASE TRANSISTORS NPN SILICIUM. BASE EPITAXIEE Compf. of BO 242, A, B, C P R ELIM INARY DATA NOTICE PRELIMINAIRE - Complementary symetry stages amplifiers /4 5 V I 60 V 180 V *1 0 0 V 3 A


    OCR Scan     		PDF O-220 drawingCB-117on BO 241 A bd2410 BD241 TF 241 BD NPN transistors BD - 100 V jc31 241B BD 241 7410

    LT 238

    Abstract: BD 238 BD234
    Text: PNP SILICON TRANSISTORS, EPITAXIAL BASE BD 234 TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IE S g Q 2 3 0 BD 238 Compl. of BD 233, 235, 237 PRELIMINARY DATA N O TICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


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    w26c

    Abstract: ESM 11 thomson ESM136 15S2 25CC
    Text: ESM 136 ESM 138 ESM 140 PNP SILICON TRANSISTORS EPITAXIAL BASI TRANSISTORS PNP S ILIC IU M A BASE EPITAXIEE Compì, of ESM 135, 137, 139 PRELIMINARY DATA NO TICE PR EL IM IN A IRE LF large signal power amplification Am plification BF grands signaux de puissance


    OCR Scan     		PDF O-220 drawingCB-117on CB-117 w26c ESM 11 thomson ESM136 15S2 25CC

    esm 117

    Abstract: ESM218 TRANSISTORS SILICIUM, BASE EPITAXIEE
    Text: ESM 217 ESM 218 NPN SILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS SILIC IU M D ARLIN G TO N NPN, BASE EPITAXfEE Compl. o f ESM 2 6 1 ,2 6 2 P R E L IM IN A R Y D A TA NOTICE P R E LIM IN A IR E Monolithic construction Construction m onolithique


    OCR Scan     		PDF O-220 drawingCB-117on CB-117 100mA 300/JS esm 117 ESM218 TRANSISTORS SILICIUM, BASE EPITAXIEE

    BG433

    Abstract: Bo435 vertical tv deflexion BD 435 sus 433
    Text: BD433 BD435 NPN S IL IC O N TR A N S IS TO R S , E P IT A X IA L BASE TRANSISTORS S IL IC IU M NPN. BASE E P IT A X IE E Compì, o f BD 4 3 4 , BO 436 P R E L IM IN A R Y D A T A NOTICE P R E LIM IN A IR E These transistors are intended for complemen­ tary or quasi complementary symetry ampli­


    OCR Scan     		PDF BG433 Bo435 vertical tv deflexion BD 435 sus 433

    amplificateur

    Abstract: vertical tv deflexion BD233 bo236 BD NPN transistors bd 233 bd 237
    Text: NPN SILICON TRANSISTORS, E P IT A X IA L BASE BD 233 TRANSISTORS SILICIUM NPN, BASE EPITAXIEE gg 2 .3 5 BD 237 Compl. o f BD 234, BO 236, BD 238 P R E LIM IN A R Y D A T A NOTICE PRELIMINAIRE These transistors are intended fo r complemen­ ta ry or quasi complementary sym etry amplifiers :


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    2N6109

    Abstract: 2N6107 2N6111 PNP 2n series an 6107 2N 6107 ZA2N
    Text: 2N 6107 2N 6109 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS SILIC IU M PNP, BASE E PITAXIEE 2N 6111 Compì, of 2N 5490 series PR E LIM IN A R Y DATA N O T IC E P R E L IM IN A IR E • LF large signal power amplification Am plification B F grands signaux de puissance


    OCR Scan     		PDF CB-117on CB-117 2N6109 2N6107 2N6111 PNP 2n series an 6107 2N 6107 ZA2N

    BD 468 S

    Abstract: bj 170 BD170
    Text: PNP SILICON TRANSISTORS, EP ITAXIAL BASE BG166 T R A N S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E g Q - |g g BD 170 Compl.of BD 165, BD 167, BD 169 PR E LIM IN A R Y DATA N O T IC E P R E L IM IN A IR E These transistors are intended for complemen­


    OCR Scan     		PDF J-60V BD 468 S bj 170 BD170

    BD302

    Abstract: bd304 7500BD deflexion
    Text: BD 302 BD 304 PNP SILICON TRANSISTORS, EPITAXIAL BASE TRANSISTORS S IL IC IU M PNP, BASE E P IT A X IA L E Compì, of BD 3 0 1 ,3 0 3 Dissipation and Iç /g derating Plastic case Variation de dissipation e t de l$ /g B o itie r plastique 55 W BD 302 BD 304


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    bdy82

    Abstract: BDY83
    Text: BDY 82 BDY 83 PNP SILICON TRANSISTORS, EPITAXIAL BASE TR AN S IS TO R S PNP S IL IC IU M , B A S E E P IT A X IE E Compì, of BDY 80, BDY 81 PRELIM INARY DATA N O T IC E P R E L IM IN A IR E • LF large signal power amplification A m p lific a tio n B F grands sig naux de puissance


    OCR Scan     		PDF BDY82 O-220 drawingCB-117on CB-117 bdy82 BDY83

    BD - 100 V

    Abstract: transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676
    Text: DU D/D, M PNP S ILIC O N D A R L IN G T O N TR A N S IS TO R S , E P IT A X IA L BASE BD 678. A TRANSISTORS DARLIN G TO N SILIC IU M PNP, BASE EPITAXIES BD 680,' A Compì, of BD 67 5, A ; BD 67 7, A ; BD 67 9, A P R E L IM IN A R Y D A TA NOTICE P R ELIM IN A IR E


    OCR Scan     		PDF O-126 BD - 100 V transistor BD 522 BD 680 vertical tv deflexion bd 676 bd676 bd678 darlington bd deflexion LB 676

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


    OCR Scan     		PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58

    on 5296

    Abstract: c 5296 m5298 2N5298 2n5294 2n5296 .w15C w15c
    Text: 2N 5294 NPN SILICON TRANSISTORS, HOMOBASES 2 |\J 5 2 9 6 T R A N S IS T O R S N P N S I L I C I U M , H O M O B A S E S 2N 5298 Compì, of ESM 1 3 2 ,1 3 3 ,1 3 4 Complementary power amplification stages A m p lifica tio n de puissance à symétrie complémentaire


    OCR Scan     		PDF T0-220 drawingCB-117on CB-117 on 5296 c 5296 m5298 2N5298 2n5294 2n5296 .w15C w15c

    on 5296

    Abstract: c 5296 2N5296 2n5294 npn 100n 1a 2n5298
    Text: NPN S ILICO N T R A N S IS T O R S , H O M O B A S E S 2N 5294 TRANSISTORS NPN S ILIC IU M , HOMOBASES 2 |\J 5 2 9 6 2N 5298 Com pì, of ESM 1 3 2 ,1 3 3 ,1 3 4 Com plementary power am plification stages A m p lifica tio n de puissance à symétrie complémentaire


    OCR Scan     		PDF T0-220 drawingCB-117on CB-117 on 5296 c 5296 2N5296 2n5294 npn 100n 1a 2n5298

    c 5296

    Abstract: on 5296 2N5296 2N5294 ci 7411 2n 397 2n 394 esm 200 2n5298 w15C
    Text: NPN S ILICO N T R A N S IS T O R S , H O M O B A S E S 2N 5294 TRANSISTORS NPN S ILIC IU M , HOMOBASES 2 |\J 5 2 9 6 2N 5298 Com pì, of ESM 1 3 2 ,1 3 3 ,1 3 4 Com plementary power am plification stages A m p lifica tio n de puissance à symétrie complémentaire


    OCR Scan     		PDF T0-220 drawingCB-117on CB-117 c 5296 on 5296 2N5296 2N5294 ci 7411 2n 397 2n 394 esm 200 2n5298 w15C

    SFC2741DC

    Abstract: sfc2741c sfc2741 SN72741P SF.C2741C SN72741 LM1307N SN72741L SN55471 LM1310
    Text: C H UIICF OD r DK HÛ U INTERFAC E CIRCUITS INTEGRATED SERIES 3600 LAM P and POWER DRIVERS These 'mini-DIP' dual peripheral and power drivers are bi­ polar monolithic integrated circuits incorporating AND, NAND, OR, or NOR logic gates, high-current switching tran­


    OCR Scan     		PDF MIL-M-38510 MIL-STD-883, ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M T2741WV ULN2151D SFC2741DC SN72741P SF.C2741C SN72741 LM1307N SN72741L SN55471 LM1310

    tda 3611

    Abstract: RCA 3086 SFC2741C 3613m MC1310P sfc2741 SN76116 mc1305p 741TC sn75474p
    Text: C H UIICF OD r DK HÛ U INTERFAC E CIRCUITS INTEGRATED SERIES 3600 LAM P and POWER DRIVERS These 'mini-DIP' dual peripheral and power drivers are bi­ polar monolithic integrated circuits incorporating AND, NAND, OR, or NOR logic gates, high-current switching tran­


    OCR Scan     		PDF MIL-M-38510 MIL-STD-883, ULN2289A SFC2741C SFC2741 ULN2151D ULN2151M T2741WV ULN2151D tda 3611 RCA 3086 3613m MC1310P SN76116 mc1305p 741TC sn75474p

    ef6800

    Abstract: 68000 thomson
    Text: O T H O M S O N -C S F SEMICONDUCTEURS S P E C IF IQ U E S T S 6 8 C 0 0 0 LOW POWER HCMOS 16/32 BIT MICROPROCESSOR DESCRIPTION The TS 68COOO reduced power consumption device dissipa­ tes an order of magnitude less power than the HMOS T3 68000. The T S 68COOO is an im plem entation o f the


    OCR Scan     		PDF 68COOO 68C000 16-bit 24-bit 32-bit TS6800499 ef6800 68000 thomson

    P200A

    Abstract: IC 4543
    Text: TL16PNP200A STANDALONE PLUG-AND-PLAY PnP CONTROLLER S LLS 274A -A P R IL I9 9 7 -R E V IS ED MAY 1997 PnP Card Autoconfiguration Sequence Compliant Satisfies All Requirements for Qualifying for the Windows 95 Logo Supports up to Five Logical Devices Simple 3-Terminal Interface to Serial


    OCR Scan     		PDF TL16PNP200A 24-Bit 16-Bit ST93C56/66 P200A IC 4543

    TS68C901BMC4

    Abstract: TS68C901B 68C901B B 58 371 TS68C901BME8 901b chip motorola TS68C901BM TS68C901BMW4 TS68C901BMF8 TS68C901BMCB
    Text: T S 6 8 C 9 0 1 B HCMOS MULTI FUNCTION PERIPHERAL DESCRIPTION The TS68C901B m u lti-fu n c tio n p e rip h e ra l CMFP is a member of the TS 68000 Fam ily o f peripheral and the CMOS version o f th e TS 68901. The CMFP d ire ctly interfaces to the TS 68000 processor fa m ily via an asynchronous bus


    OCR Scan     		PDF TS68C901B 68C901B TS68C901BMC4 B 58 371 TS68C901BME8 901b chip motorola TS68C901BM TS68C901BMW4 TS68C901BMF8 TS68C901BMCB

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


    OCR Scan     		PDF