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    THOMSON TRANSISTOR DE PUISSANCE RF Search Results

    THOMSON TRANSISTOR DE PUISSANCE RF Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    THOMSON TRANSISTOR DE PUISSANCE RF Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    77150

    Abstract: diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw
    Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSON aCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E FFIC IE N C Y FAST R ECO V ERY R E C TIFIE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT 59C 02228


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    PDF PIAVI51 BVW77 77150 diode puissance 30 amp diode BYW 76 diode BYW 66 BYW 77 high efficiency fast recovery diode byw diode BYW BYW 90 22313 diodes byw

    77150

    Abstract: diode BYW 31 200
    Text: ~5TC D I ÎTETEB? QGGE22Û 3 | S G S— THOMSON BYW 77-50-200, R BYW 77-150 A, (R) O THOMSONaCSF DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH E F F IC IE N C Y F A S T R E C O V E R Y R E C T IF IE R S R E D R ESSEU R S RAPID ES A H AU T REND EM ENT


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    PDF QGGE22Û CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 77150 diode BYW 31 200

    a940 Transistor

    Abstract: transistor a940 a940 amplificateur audio TCA940 a940t amplificateur BF TBA TBA audio power amplifiers thomson transistor de puissance rf amplificateur BF TCA
    Text: S G S-THOMSON 7flC D I 7 ^ 2 3 7 □□□75Hb t8C 07246 _0 TC A940 TC A 940E AF A M PLIFIER AMPLIFICATEUR BF AF A M PLIFIER AMPLIFICATEUR BF The TC A 940 .E is a m onolithic integrated circuit designed fo r class B audio am plification, w ith up to 1 0 W output power.


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    PDF 007ESM a940 Transistor transistor a940 a940 amplificateur audio TCA940 a940t amplificateur BF TBA TBA audio power amplifiers thomson transistor de puissance rf amplificateur BF TCA

    diode BYW 66

    Abstract: diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60
    Text: S^C D I 7 ^ 2 3 7 S G S-THGMSON O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 0 2 2 4 0 f D ^ o î - n ^ HIGH EFFICIENCY


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    PDF BYW80150A Q00S2M5 diode BYW 66 diode P2F DIODE DO-220 high efficiency fast recovery diode byw BYW 90 diode BYW 85 BYW 26 8050 2D C diode BYW diode BYW 60

    transistor BUX

    Abstract: BUX14 TR07
    Text: *B U X 14 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILICIUM NPN, TRIPLE DIFFUSE % Preferred device D is p o s itif recom m andé High speed, high voltage, high power transistor Transistor de puissance rapide, haute tension Thermal fatigue inspection


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    PDF BUX14 CB-19 transistor BUX BUX14 TR07

    transistor S 8050

    Abstract: ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60
    Text: S G S^C D I 7 ^ 2 3 7 S -TH G M S O N O THO M SO N-CSF QODEEMO BYWB05Q 200 BYW 80 150A DIVISION SEMICONDUCTEURS DISCRETS SUPERSWITCH HIGH EFF IC IE N C Y FA ST R EC O V ERY R E C T IFIE R S REDRESSEURS RAPIDES A HAUT RENDEMENT 59C 02240 f D ^ o î - n ^ HIGH EFFICIENCY


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    PDF BYWB05Q 130OC CB-425) CB-262) CB-262 CB-19) CB-428) CB-244 transistor S 8050 ggqb2 8A273 BYW60 Diode BYW 56 150TV diodes byw transistor 8050 d diode BYW 60

    BUX45

    Abstract: transistor et 460
    Text: * B U X 45 NPN SILICON TRANSISTOR, TRIPLE DIFFUSED TRANSISTOR SILIC IU M NPN, TRIPLE DIFFUSE ^Preferred device D isp o sitif recommandé High speed, high voltage, switching transistor Transistor de commutation , rapide , haute tension Thermal fatigue inspection


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    PDF CB-19 BUX45 transistor et 460

    D 5038 Transistor Horizontal

    Abstract: amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58
    Text: POWER TRANSISTORS TRANSISTORS DE PUISSANCE 1975 NPN S ILIC O N TR A N S IS TO R S , D IF F U S E D MESA TR A N S IS TO R S NP N S IL IC IU M , M ESA D IF F U S E S 2N 1209 • LF large signal amplification A m p lific a tio n B F grands signaux - High current switching


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    PDF CB-69 14f4g D 5038 Transistor Horizontal amplificateur audio a base de transistor transistor 2n 892 X1 amplificateur BF transistor ST TYN 616 equivalent of transistor bul 38 da bd 317 schema transistor 3055 out hv ESM214 Transistor bdy 58

    3866S

    Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    PDF

    catalogue des transistors bipolaires de puissance

    Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
    Text: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM


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    PDF

    tda2593 application

    Abstract: 711S borne TDA2593 phase control trailing edge schematic la 78140 Thomson-EFCIS 131-6 dj 134 Thomson-CSF THYRISTOR de 001 TRANSISTOR
    Text: THOMSON-EFCIS Integrated Circuits SYN CH R O AND H O R IZ O N TA L D E F LE C TIO N CO N TR O L FOR COLOR T V SET SYN CH R O N ISATIO N ET B A L A Y A G E LIGN E POUR T V COU LEU R SYNCHRO AND H O R IZ O N T A L D E F L E C T IO N C O N T R O L FOR C O LO R T V SET


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    PDF TDA2593 TDA2593 CB-79 tda2593 application 711S borne phase control trailing edge schematic la 78140 Thomson-EFCIS 131-6 dj 134 Thomson-CSF THYRISTOR de 001 TRANSISTOR

    JRC 45600

    Abstract: YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541
    Text: I SEMICON INDEXES Contents and Introduction Manufacturers' Information V O LU M E 3 INTERNATIONAL INTEGRATED CIRCUITS INDEX 15th EDITION 1997 Numerical Listing of Integrated Circuits Substitution Guide U D C 621.382.3 Diagram s THE S E M IC O N INTERNATIONAL INDEXES


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    PDF ZOP033 ZOP035 ZOP036 ZOP037 ZOP038 ZOP039 ZOP045 ZOP042 ZOP041 ZOP043 JRC 45600 YD 803 SGS 45600 JRC TDA 7277 TDA 5072 krp power source sps 6360 2904 JRC Sony SHA T90 SA philips HFE 4541