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    THOMSON GPS Search Results

    THOMSON GPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DA9232-81VZ2 Renesas Electronics Corporation Configurable, High-Efficiency Buck Regulator for GPS Sub-Systems in Wearable Devices Requiring Ultra-Low Voltage Ripple Visit Renesas Electronics Corporation
    DA9233-A1VZ2 Renesas Electronics Corporation Configurable, High-Efficiency PMIC for GPS Sub-Systems in Wearable Devices Requiring Ultra-Low Voltage Ripple Visit Renesas Electronics Corporation
    SIT5155AI-FK033IT-10.000000 SiTime ±0.5 ppm Super-TCXO for GNSS/GPS Datasheet
    SiT5155AC-FK-33N0-10.000000 SiTime ±0.5 ppm Super-TCXO for GNSS/GPS Datasheet
    SiT5155AECFK-25E0-10.949297 SiTime ±0.5 ppm Super-TCXO for GNSS/GPS Datasheet

    THOMSON GPS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    AM1517-012

    Abstract: AM1517-025 SD1888-03 SD1891-03 SD1893-03 SD1894 SD1895-03 SD1897 SD1898 SD1899
    Text: SILICON POWER TRANSISTORS 1.6 GHz SATCOM TRANSISTORS SGS-THOMSON offers a complete product line of high power devices specifically characterized for SATCOM usage in the 1600 - 1700 MHz frequency range for INMARSAT, GPS and other L-Band Satellite applications.


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    PDF SD1894 SD1891-03 SD1895-03 SD1888-03 SD1898 SD1899 AM1517-012 AM1517-025 65GHz AM1517 AM1517-012 AM1517-025 SD1888-03 SD1891-03 SD1893-03 SD1894 SD1895-03 SD1897 SD1898 SD1899

    Untitled

    Abstract: No abstract text available
    Text: TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


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    PDF TSD2922 TSD2922

    Untitled

    Abstract: No abstract text available
    Text: TSD2900 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


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    PDF TSD2900 TSD2900

    TSD2903

    Abstract: No abstract text available
    Text: TSD2903 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


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    PDF TSD2903 TSD2902 TSD2902 TSD2903

    Untitled

    Abstract: No abstract text available
    Text: TSD2902 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


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    PDF TSD2902 TSD2902

    TSD2921

    Abstract: SGS-THOMSON SGS-Thomson Transistors
    Text: TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


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    PDF TSD2921 TSD2921 SGS-THOMSON SGS-Thomson Transistors

    TSD2921

    Abstract: No abstract text available
    Text: TSD2921 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


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    PDF TSD2921 TSD2921

    TSD2904

    Abstract: No abstract text available
    Text: TSD2904 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


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    PDF TSD2904 TSD2904

    SGS-THOMSON

    Abstract: TSD2922 M176
    Text: TSD2922 RF & MICROWAVE TRANSISTORS HF/VHF/UHF N-CHANNEL MOSFETS PRODUCT DEVELOPMENT DATA SHEET This data sheet contains the design criteria and target specifications for a product which is currently under development by SGS-THOMSON. The design criteria and specifications of this item could change prior to


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    PDF TSD2922 TSD2922 SGS-THOMSON M176

    marine gps antenna

    Abstract: Matsua Electric Works electric components aromat matsua
    Text: Marine II GPS Antenna Technical Specification of Standard Type: Total Gain Noise Figure L1 1575.42 ± 1.023 MHz typ 50 Ohm 2.5 (max.) Right hand circular 360 degrees 0 degree to 90 degrees Gain: 3.0 dBi (typ.) -10 dBi min. at 0 degrees elevation Axial ratio: 3 dB (typ.)


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    PDF -35dB 1625MHz) 1525MHz) 0-14UNS-2A marine gps antenna Matsua Electric Works electric components aromat matsua

    Untitled

    Abstract: No abstract text available
    Text: th June 07 2001 page 1/3 rev.1 TMX R651 SAW Bandpass Filter GPS – IF PRELIMINARY SPECIFICATION All performances include Temperature Variations Minimum Typical Maximum Source Impedance balanced Ω - 1000 - Load Impedance (balanced) Ω - 1000 - Operating Temperature Range


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    PDF R651-R1

    rtd pt100 interface to 8051

    Abstract: 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm
    Text: INDEX Order Code Description _ 102-271 794-740 102-246 794-752 101-930 102-283 101-886 101-953 _ _ 688-137 688-149 _ _ 597-387 705-536 473-728 473-753 473-730 473-741 473-881 _ _ _ 690-648 690-703 690-636 791-180 _ 791-805 _ 101-564 101-540 101-552 101-515


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    PDF OPA340PA: ADS7816P: 12-Bit 200KHz OPA2337PA: ADS7822P: INA125UA: OPA680U: OPA547F: rtd pt100 interface to 8051 24V 20A SIEMENS battery charger LM2560 smd 58a transistor 6-pin pic 16f84 PWM circuit scr control light intensity using 8051 8051 microwave oven design of FM transmitter final year project project pic 16f84 pwm "white led" 5mm

    Fairchild presentation

    Abstract: 80c196 BU 3150 thomson gps 683XX
    Text:  Presentation #1 Brief Overview of Company and Products  Presentation #1, 9902Awebwsiintro Return to Main Menu    1  • Founded in 1983 • Headquarters in Fremont, California Silicon Valley – Sales/Support Offices


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    PDF 9902Awebwsiintro 9902webflashdetail Fairchild presentation 80c196 BU 3150 thomson gps 683XX

    T1200B-RC-110

    Abstract: T1205A T1203 T1200 JcAir Data 400 arinc 429 T-1202 application notes on ARINC-429 receiver t1201 T1202
    Text: Avionics T1200B ARINC 429 CONTROL DISPLAY UNIT The one test set that covers the entire spectrum of the avionics industry • External 12 inch touch screen display allows main unit to be located away from operation • PS-2 style mouse may be used with or without touch screen


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    PDF T1200B T1200B-RC-110 T1205A T1203 T1200 JcAir Data 400 arinc 429 T-1202 application notes on ARINC-429 receiver t1201 T1202

    Great Mixed-signal Technologies

    Abstract: EH11
    Text: Mixed-signal and power: the next step forward Julian Hayes, VP of Marketing and Applications, Wolfson Microelectronics Introduction The pressure continues for designers of portable appliances to incorporate more high performance multimedia experiences into ever smaller products with longer battery life, and


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    PDF Suite1800, Great Mixed-signal Technologies EH11

    power amplifier ic ta2040

    Abstract: Nokia 6100 LCD TA2040 Transceiver Broadcom 3G RF interfacing 8051 with bluetooth modem Tripath TA2040 AMPLIFIER pixelworks L7205 tft interface with 8051 trw radar ac
    Text: SEMICONDUCTOR TIMES JULY 2000 / 1 JULY 2000 FOCUSED ON EMERGING SEMICONDUCTOR COMPANIES Radar Scope Bay Microsystems Bay Microsystems was recently founded to develop chips. What kind? The company wouldn’t disclose any details to us. One rumor is “high-speed interfaces” whatever


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    TDA0161 equivalent

    Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
    Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:


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    st20 Application CPU

    Abstract: ST20
    Text: /= T SCS -THOMSON ^7# M M i n n r a m « ST20-GP1 GPS PROCESSOR ENGI NEERI NG DATA FEATURES • Application specitic features • 12 channel GPS correlation DSP hardware and ST20 CPU tor control and position caluculations on one chip • no TCXO required


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    PDF ST20-GP1 RTCA-SC159 32-bit 8/16-bits st20 Application CPU ST20

    MSC1002

    Abstract: AVIA c cube IC CD 4440 amplifier circuit diagram
    Text: TABLE OF CONTENTS INTRODUCTION ALPHANUMERICAL INDEX Page 4 7 PRODUCTS GUIDE 11 -SYM BO LS -SELECTION GUIDE -C R O S S REFERENCE 13 14 37 DATASHEETS 45 INTRODUCTION SGS-THOMSON MICROELECTRONICS, RF PRODUCTS GROUP RF & MICROWAVE COMPONENTS DATABOOK, 2nd Edition


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    PDF 28Vdc MSC1002 AVIA c cube IC CD 4440 amplifier circuit diagram

    BA 553

    Abstract: 41t smd TSH321 smd 41t TSH321I
    Text: SGS-THOMSON TSH321 WIDE BANDWIDTH AND MOS INPUTS SINGLE OPERATIONAL AMPLIFIER • LOW DISTORTION ■ GAIN BANDWIDTH PRODUCT : 300MHz ■ . . ■ GAIN O F 2 STABILITY SLEW RATE : 400V4xs VERY FAST SETTLING TIME : 60ns 0.1 A VER Y HIGH INPUT IMPEDANCE DESCRIPTION:


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    PDF 300MHz 400V4xs TSH321 0Db2431 5C25k BA 553 41t smd smd 41t TSH321I

    Untitled

    Abstract: No abstract text available
    Text: rz T SGS-THOMSON SD2920-02 RF MOS FIELD EFFECT TR AN SISTO RS HF/VHF APPLICATIONS • . ■ . . . . . . - 2 - 200 MHz 50 VOLTS IMD - 30dB CLASS AB GOLD METALLIZATION FOR HIGH RELIABILITY DESIGNED FOR LINEAR OPERATION WIDEBAND TUNING SIMPLE BIAS CIRCUITRY COMMON SOURCE CONFIGURATION


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    PDF SD2920-02 SD1920-02 SD192002

    M147

    Abstract: M151 M-147 SATCOM SD1868 SD1888-03 SD1891-03 SD1893-03 SD1895-03 SD1897
    Text: S IL IC O N P O W E R T R A N S IS T O R S mm&m SGS-THOMSON offers a compiete product line of high power devices specifically characterized for SATCOM usage in the 1500 - 1700 MHz frequency range for INMARSAT, GPS and other L-Band Satellite applications. Devices in the product group have been qualified for hi-rel aerospace programs as well as ground and shipboard


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    PDF SD1891-03 SD1893-03 SD1897 SD1895-03 SD1888-03 SD1868 SD1898 SD1899 AM1517-012 AM1517-025 M147 M151 M-147 SATCOM

    TFK diodes BYW 76

    Abstract: 13009 Jt 43 byw 56 equivalent TFK diodes 148 tfk U 264 tfk 804 TFK 421 diode BYW 60 diode byt 45 J BYT 45 J
    Text: .4 . 'W iriy IFWCCIRQ electronic Creative Technologies Selection guide transistors and diodes Contents, alpha-numeric Type Page BA 204 BA 243 BA 244 BA 282 BA 283 BA 4 79 G BA 4 7 9 S BA 679 BA 682 BA 683 BA 779 6 6 6 6 6 7 7 7 6 6 7 B A Q 33 BAQ 34 BAQ 35


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    NEC 10F

    Abstract: low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book
    Text: just imagine NEC MUL TI MEDI A NESAT PROCESS nan By utilizing the NESAT NEC Silicon Advanced Technology process, NEC realizes low-noise silicon transistors, high-perform ance silicon m onolithic integrated circuits, as well as in the super high-frequency range high reliability.


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    PDF devic87 P12647EJ3V0PF00 NEC 10F low-noise L-band tuner nec mmic Monolithic Amplifier NEC JAPAN TRANSISTORS 1981 nec book