STK411-230E
Abstract: STK411-220E stk442-130 UPC2581V PAL005A FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Text: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for
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STVDST-01
CAT22
STK411-230E
STK411-220E
stk442-130
UPC2581V
PAL005A
FN1016
STRG6153
RSN313H25
STK407-070B
MCZ3001D
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TDA0161 equivalent
Abstract: 1N3393 BDX54F equivalent byt301000 bux transient voltage suppressor ST90R9 ua776mh sgs 2n3055 Transistor morocco mje13007 inmos transputer reference manual
Text: SHORTFORM 1995 NOVEMBER 1994 USE IN LIFE SUPPORT DEVICES OR SYSTEMS MUST BE EXPRESSLY AUTHORIZED SGS-THOMSON PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF SGS-THOMSON Microelectronics. As used herein:
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Thomson-CSF semiconductor
Abstract: diodes B2V BZV36 MARKING BUX BZV36A-B BZV32 BZV33B
Text: S^C D 1 s G S-THOMSON O 7^21337 aaOSSbE M THOMSON-CSF * BZV 32,A ,B — BZV 36,A ,B DIVISION SEMICONDUCTEURS V O L TA G E REFERENCE D IO D ES TE M P E R A T U R E C O M P E N S A TE D DIODES D E RÉFÉRENCE D E TENSION (COMPENSÉES EN TEMPÉRA TURE) EPI Z
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7121E37
BZV32
BZV36,
CB-102)
Thomson-CSF semiconductor
diodes B2V
BZV36
MARKING BUX
BZV36A-B
BZV33B
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bzv 46
Abstract: ZENER DIODES BZV 48 ZENER DIODES BZV 48 5V1
Text: r z 7 SGS-THOMSON ^ T # if U@ « i BZV 47 C 3V3 200 ZENER DIODES . VOLTAGE RANGE : 3.3V TO 200V • HERMETICALLY SEALED PLASTIC CASE ■ PACKAGE ACCORDING TO NORMALIZATION C C T U : F 126 ■ PRO ELECTRON REGISTRATION ■ HIGH SURGE CAPABILITY 55W @ 10ms
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bzv 46
Abstract: 55c 6V2 Zener 4v7 ZENER DIODES BZV 55c
Text: Zìi SCS-THOMSON T / I - Ì 5" ELiOT@KS BZV 47 C 3V3 -> 200 S G S -T H 0 M S 0 N ZENER DIODES • VOLTAGE RANGE : 3.3V TO 200V ■ HERMETICALLY SEALED PLASTIC CASE ■ PACKAGE ACCORDING TO NORMALIZATION C C T U : F 126 . PRO ELECTRON REGISTRATION . HIGH SURGE CAPABILITY 55W @ 10ms
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BZV47C
Abstract: bzv47
Text: rz T ^7# SGS-THOMSON BZV47C5V1 / 200 2W ZENER DIODES FEATURES • VOLTAGE RANGE : 5.1 V to 200 V ■ HERMETICALLY SEALED P LA S TIC C A S E : F126 PACKAGE ■ HIGH SURGE C A P A B ILIT Y : 55 W 10 m s . DESCRIPTION 2 W silicon Zener diodes. ABSOLUTE RATINGS (Tam b= 25°C)
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BZV47C5V1
BZV47C
bzv47
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bzv 4v7
Abstract: bzv 6v8 ZENER DIODES BZV 85 8V2 5W ZENER DIODES BZV 85 8V2 bzv 4v3 5W zener sgs-thomson 58C18 ZENER DIODES BZV 48 ZENER DIODES BZV 85 ZENER DIODES BZV 48 5V1
Text: n=Z SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MD K© l[LIÊTO(S !ii!lD@i ZENER DIODES STANDARD ZENER DIODES Type V Z T 'IZ T * min rZT 1 'ZT* max 5W max (Î2) (V) <"»A) / Tam b = 50°C Tj max = 175°C BZV 58 C 3V3 BZV 58 C 3V6 BZV 58 C 3V9 BZV 58 C 4V3
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Untitled
Abstract: No abstract text available
Text: rz 7 ^7# SCS-THOMSON B SYMMETRICAL ZENER DIODE PROTECTION D E S C R IP T IO N BZV 37 is a dual diode, specially designed for ESD protection. A B S O L U T E R A T IN G S (limiting values) Symbol P aram eter V alue Unit Ptot Pow er D issipation* T amb —50°C
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BZV 400
Abstract: 16C200 16C20 16c56 16C24 16C100 bzv 46 16C18 16c51 BZV16C36
Text: y zener diodes diodes zener THOMSON-CSF Types min 3 W / Tam|¡i BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV BZV 16C3V3 16C3V6 16C3V9
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16C3V3
16C3V6
16C3V9
16C4V3
16C4V7
16C5V1
16C5V6
16C6V2
16C6V8
16C7V5
BZV 400
16C200
16C20
16c56
16C24
16C100
bzv 46
16C18
16c51
BZV16C36
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zener diode IN 825
Abstract: 1N4566 zener diode 1n 4565 4577 1N3157 1N821 1N823 1N825 1N827
Text: n=7 SGS-THOMSON ^7 # GENERAL PURPOSE & INDUSTRIAL MO K@ilLIi STO©R!lû(gi ZENER DIODES SYMMETRICAL ZENER DIODE Type Vz t ' I z t 'ZT rZT 1 <ZT V(CL @ Ipp Ct yp Ir ' V r V(CL) @ Ipp Package Vr = 0 BZV 37 max. 6.2 (Ö) (mA) 6.8 (V) 20 5 (V) (A) 15 F = 1 MHz
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1N821
1N823
1N825
1N827
1N829
1N4566
1N3157
zener diode IN 825
zener diode 1n
4565
4577
1N821
1N823
1N825
1N827
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DIODE BZV
Abstract: DA9 diode Thomson-CSF diodes symboles diodes BZV54B
Text: S IC S G S-THQMSQN . □ □ □ 2 ? 3 cî t. BZV 53A, B, BZV 54 A, B O THOMSON-CSF 5 9C 0 27 39 DIVISION SEM ICC_ 1 0 • ° T '" ( 0 7 TEMPERATURE COMPENSATED VOLTAGE REFEREN CE DIODES DIODES DE R E FE R E N C E DE TENSION COMPENSEES EN TEM PER A TU R E
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O-236
CB-166)
DIODE BZV
DA9 diode
Thomson-CSF diodes
symboles diodes
BZV54B
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8C33
Abstract: C47B 58c18
Text: rZ 7 SGS-THOMSON [LIOT MS ^7# 5 BZV 58 C 3V3 -> 200 ZENER DIODES • ■ ■ . VOLTAGE RANGE : 3.3V TO 200V HERMETICALLY SEALED PLASTIC CASE PRO ELECTRON REGISTRATION HIGH SURGE CAPABILITY up to 110W @ 10ms D E S C R IP T IO N 5W silicon Zener diodes. A B S O L U T E R A T IN G S (limiting values)
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CB-417
8C33
C47B
58c18
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Untitled
Abstract: No abstract text available
Text: SbE D • 7T2T237 0G41Sb4 761 ■ SGTH SGS-THOMSON r-n-il lLIO T@ iD gS BZV 37 S G S-TH0HS0N SYMMETRICAL ZENER DIODE (PROTECTION DO 35 (Glass) D E S C R IP T IO N BZV 37 is a dual diode, specially designed for ESD protection. A B S O L U T E R A T IN G S (limiting values)
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7T2T237
0G41Sb4
100ns
-1000ns
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ZENER DIODES BZV 40 C 8V2
Abstract: ZENER DIODES BZV 85 8V2 zener 5v6 BZV 400 ZENER DIODES BZV 48 5V1 bzv 41 47C30 ZENER DIODES BZV 48 diode 47c ZENER DIODES BZV 85
Text: SGS-THOMSON GENERAL PURPOSE & INDUSTRIAL ^ 7# MOeGœiLtiCTÔÂBÊS ZENER DIODES STANDARD ZENER DIODES Type Vz t 'Iz t * rZ T ''Z T * 'Z T * “ VZ I r 'V r Vr •ZM P ackage Tam b 7 0 °C m in m ax !2 (V) 2W P P P P P P P P P P P P P P P P P P P P P BZV
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Untitled
Abstract: No abstract text available
Text: SbE D / = 7 ^ 7# • T' E TE S ? 0D415bb 5 5 4 M S G T H S G S -T H O M S O N M e ^ m ie f lH itB M e s T ' l l - i y BZV 47 C 3 V3 200 S G S-THOMSON ZENER DIODES ■ VOLTAGE RANGE : 3.3V TO 200V ■ HERMETICALLY SEALED PLASTIC CASE ■ PACKAGE ACCORDING TO NORMALIZATION
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0D415bb
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bzv48c
Abstract: 48C30 AICB ZENER DIODES BZV 48 5V1 bzv 46 BZV48C3V3 BZV48C68 ZENER DIODES BZV 48 BZV48C200 BZV48C3V6
Text: S S ' ïC G S-THOMSON O T H O M S O N ’C S F D 1 DT _59C .02452 0002452 ^ U 'IS B Z V 48 C 3 V 3 — B Z V 48 C 200 DIVISION SEMICONDUCTEURS ZENER DIODES DIODES ZENER 5 W hermetically sealed plastic silicon Zener diodes offering the following advantages :
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Untitled
Abstract: No abstract text available
Text: SGS-THOMSON SURFACE MOUNT DEVICES ^ 7# Ü O M tH LIO TûK » GENERAL PURPOSE & INDUSTRIAL ZENER DIODES Type V ZT /IZT * rZ T ''Z T * 'Z T * 'z k ^zk “ VZ |R I V r T am b 25°C min max max 1 j max mA = (Í2) (mA) max max (10-4/°C ) •ZM >ZSM (V) (mA)
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diodes B2V
Abstract: B50C marking 27.A STG-65 Thomson BZV BZV27 general semiconducteur thomson diodes
Text: L S G | s^c D S -T H O M S O N Q 7^23? aooasbD □ THOMSON-C5F * BZV27,A — BZV31,A DIVISION SEMICONDUCTEURS VOLTAGE REFERENCE DIODES TEMPERATURE COMPENSATED ^ D IO D E S D E R É F É R E N C E D E T E N S IO N ! C O M P E N S É E S E N T E M P É R A T U R E )
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7T5TE37
B50C-+
1750C
diodes B2V
B50C
marking 27.A
STG-65
Thomson BZV
BZV27
general semiconducteur
thomson diodes
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C5148
Abstract: C5V65 bzv 4v7 marking rzr -sot23 -led 5v6 regulator bzx84 marking 84 BZX84C 28Z4 84C36
Text: voltage regulator diodes diodes de régulation de tension Types V ZT m in m ax V rZT @ IZ T m ax THOMSON-CSF a Vz rZ K @ >ZK m ax (Q) lm A | 62) typ (m A I (% / °C ) >r @ V R m ax A) (V ) (m A I •ZM M ark in g BZX BZX BZX BZX BZX 84 84 84 84 84 C 3V3
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BZV53
C5148
C5V65
bzv 4v7
marking rzr -sot23 -led
5v6 regulator
bzx84
marking 84
BZX84C
28Z4
84C36
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Untitled
Abstract: No abstract text available
Text: m SbE D 7^237 QÜM1S73 7TM • S G T H r z 7 SCS-THOMSON ^ 7 # M e œ & ie ïB M S § T-//-/SB Z V 5 8 C 3 V 3 2 0 0 S 6 S-TH0HS0N ZENER DIODES ■ ■ ■ ■ VOLTAGE RANGE : 3.3V TO 200V HERMETICALLY SEALED PLASTIC CASE PRO ELECTRON REGISTRATION HIGH SURGE CAPABILITY (up to 110W @
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M1S73
CB-417
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IN5363B
Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
Text: Cross Reference Every care has b een taken in compiling this cross referen ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any
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03NH45
05NH46
05NU41
05NU42
0R8GU41
5KE10
5KE10Û
5KE100A
5KE100CA
5KE10CCF
IN5363B
IN5361B
P6KEI5CA
IN5956B
TFK S 417 T
IM200Z
in5349b
IN5384B
in5366b
P6KEI5A
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bzv16c
Abstract: 18516 bzv 4v7 BZV18 BZV16C200 BZV16C3V3 DEZ18516 bzv 40 16c68 e6v2
Text: S G STC S —THOMSON O TH0MS0N-C5F 59C 024-44 D | 7=^237 0002444 D B Z V 16 C 3V3 —- BZV16C200 DIVISION SEM ICO N D UCTEURS • ZENER DIODES DIODES ZENER 3 W silicon Z e n e r diodes, hermetically sealed metal according to normalization C C T U : F 61 offering the follow ingadvantages :
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D54MM
BZV16C3V3
BZV16C200
bzv16c
18516
bzv 4v7
BZV18
BZV16C200
BZV16C3V3
DEZ18516
bzv 40
16c68
e6v2
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1N007
Abstract: fri07 1N007 rectifier MDA 2500 1Ns408 MDA 2506 by164 philips wiom BY225-200 ITT 1N4005
Text: FAGQR ELECTRONICS 57E D WÊ 3 ^ 3 2 5 Q000LS3 T31 « F G R S CROSS REFERENCE COMPETITIVE SERIES COMPETITOR FAGOR SERIES 1 5SKE 8 2 - 1 5KE 300 1 SKE 8 2 A -1 5KE 300 A THOM/CS1/MOT/GI THOM/GSI/MOT/GI 1 SKE 8 2 C -1 5KE 300 C 1 5SE 12 - 1 SSE 300 1 5SE 12 A • 1 5SE 300 A
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0G0Gb53
15SKE
15KE82
5KE300C
1KAB10-1KAB1C0
W005F-W10F
100JB
FB1001
FB1006
1N007
fri07
1N007 rectifier
MDA 2500
1Ns408
MDA 2506
by164 philips
wiom
BY225-200
ITT 1N4005
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1n53838
Abstract: BZV48C ZENER 1N4 BZY97-C2V7 ZENER 1N5 BZX61 Z500-1 BZV40C ZX85C Z500-21
Text: ZENER DIODES CROSS REFERENCE INDUSTRY PART NUMBER 1/4 M 2 .4 A Z 10 1/4 M 2 .7 A Z 10 1/4 M 3 .0 A Z 10 1/4 M 3 .3 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .6 A Z 10 1/4 M 3 .9 A Z 10 1/4 M4 .3 A Z 10 1/4 M4 .7 A Z 10 1/4 M 5.1 A Z 10 1/4 M5 .6 A Z 10 1/4 M6 .2 A Z 10
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5270B
4187B
4193B
5226B
BZV55C
5257B
ZX85C
ZP4100
ZP4120
1n53838
BZV48C
ZENER 1N4
BZY97-C2V7
ZENER 1N5
BZX61
Z500-1
BZV40C
Z500-21
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