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    THERMAL RESISTANCE VS. MOUNTING PAD AREA Search Results

    THERMAL RESISTANCE VS. MOUNTING PAD AREA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPD4164F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=2A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TPD4163F Toshiba Electronic Devices & Storage Corporation Intelligent power device / VBB=600V / Iout=1A/ Surface mount type / HSSOP31 Visit Toshiba Electronic Devices & Storage Corporation
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation

    THERMAL RESISTANCE VS. MOUNTING PAD AREA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    76105DK8

    Abstract: Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334
    Text: HUF76105DK8 Data Sheet 5A, 30V, 0.050 Ohm, Dual N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF76105DK8 76105DK8 Dual N-Channel MOSFET SOP8 AN9321 AN9322 HUF76105DK8 HUF76105DK8T MS-012AA TB334

    3-Terminal Positive Voltage Regulators

    Abstract: lm341 lm78m12ct H03A LM78M05CH LM78M12CH LM78M15CH LM78MXX
    Text: LM341/LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes


    Original     		PDF LM341/LM78MXX LM341 LM78MXX 3-Terminal Positive Voltage Regulators lm78m12ct H03A LM78M05CH LM78M12CH LM78M15CH

    Untitled

    Abstract: No abstract text available
    Text: HUF75309T3ST Data Sheet June 1999 File Number 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET Features This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75309T3ST

    AN9322

    Abstract: HUF75309T3ST TB334 AN7254 AN9321 75309
    Text: HUF75309T3ST Data Sheet 3A, 55V, 0.070 Ohm, N-Channel UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    Original     		PDF HUF75309T3ST AN9322 HUF75309T3ST TB334 AN7254 AN9321 75309

    Untitled

    Abstract: No abstract text available
    Text: HUFA76413DK8T N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8T

    Untitled

    Abstract: No abstract text available
    Text: HUFA76413DK8T_F085 N-Channel Logic Level UltraFET Power MOSFET 60V, 4.8A, 56mΩ General Description These N-Channel power MOSFETs are manufactured using the innovative UltraFET® process. This advanced process technology achieves the lowest possible onresistance per silicon area, resulting in outstanding performance. This device is capable of withstanding high energy


    Original     		PDF HUFA76413DK8T

    1BL3 marking code

    Abstract: MBRS130LT3G SBRS8130LT3G 1bl3 diode MBRS130LT 1BL3
    Text: MBRS130LT3G, SBRS8130LT3G Schottky Power Rectifier Surface Mount Power Package This device employs the Schottky Barrier principle in a large area metal−to−silicon power diode. State−of−the−art geometry features epitaxial construction with oxide passivation and metal overlay


    Original     		PDF MBRS130LT3G, SBRS8130LT3G MBRS130LT3/D 1BL3 marking code MBRS130LT3G 1bl3 diode MBRS130LT 1BL3

    LZP-00WW00

    Abstract: 3800lm
    Text: LedEngin, Inc. LZP-Series Highest Lumen Density Warm White Emitter LZP-00WW00 Key Features • •           Highest luminous flux / area single LED emitter o 3800lm Warm White o 40mm² light emitting area Compact 12.0mm x 12.0mm x 6.7mm package


    Original     		PDF LZP-00WW00 3800lm 1000mA/die, LZP-00WW00

    Untitled

    Abstract: No abstract text available
    Text: LedEngin, Inc. LZP-Series Highest Lumen Density Neutral White Emitter LZP-00NW00 Key Features • •           Highest luminous flux / area single LED emitter o 4600lm Neutral white o 40mm² light emitting area Compact 12.0mm x 12.0mm x 6.7mm package


    Original     		PDF LZP-00NW00 4600lm 1000mA/die,

    LZP-00CW00

    Abstract: "Cool White Led"
    Text: LedEngin, Inc. LZP-Series Highest Lumen Density Cool White Emitter LZP-00CW00 Key Features • •          Highest luminous flux / area single LED emitter o 5500lm Cool White o 40mm² light emitting area Compact 12.0mm x 12.0mm x 6.7mm package


    Original     		PDF LZP-00CW00 5500lm 1000mA/die, LLxx-3T11) LZP-00CW00 "Cool White Led"

    TO-252 78m05

    Abstract: 3-Terminal Positive Voltage Regulators 78m05 to-252 LM78M05C MWC 78M05 VR
    Text: LM341/LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes


    Original     		PDF LM341/LM78MXX LM341 LM78MXX LM78M12CT O-220 LM341T-12 LM78M12CH TO-252 78m05 3-Terminal Positive Voltage Regulators 78m05 to-252 LM78M05C MWC 78M05 VR

    RHR1K160D

    Abstract: TB334 MS-012AA K160D
    Text: RHR1K160D Data Sheet January 2000 File Number 4788 1A, 600V Hyperfast Dual Diode Features [ /Title The RHR1K160D is a hyperfast dual diode with soft recovery • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . . . <25ns RHR1 characteristics (t rr < 25ns . It has about half the recovery


    Original     		PDF RHR1K160D RHR1K160D 150oC K160D TB334 MS-012AA

    3-Terminal Positive Voltage Regulators

    Abstract: TO-252 78m05 78M15 regulator n78m05 LM78M05CDTX LM34112 lm78m12c lm341 Full Material Datasheet
    Text: LM341/LM78MXX Series 3-Terminal Positive Voltage Regulators General Description Features The LM341 and LM78MXX series of three-terminal positive voltage regulators employ built-in current limiting, thermal shutdown, and safe-operating area protection which makes


    Original     		PDF LM341/LM78MXX LM341 LM78MXX O-220, O-252 5-Aug-2002] 3-Terminal Positive Voltage Regulators TO-252 78m05 78M15 regulator n78m05 LM78M05CDTX LM34112 lm78m12c Full Material Datasheet

    TB370

    Abstract: AN7254 AN7260 ITF87072DK8T MS-012AA
    Text: ITF87072DK8T Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 January 2002 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V


    Original     		PDF ITF87072DK8T MS-012AA) TB370 AN7254 AN7260 ITF87072DK8T MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: DI9956 DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Lower On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E Min Max A 3.94


    Original     		PDF DI9956 DS11506

    TB370

    Abstract: 67e4 AN7254 AN7260 ITF87056DQT ITF87056DQT2 n2 6346
    Text: ITF87056DQT Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 3 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V • 2.5V Gate Drive Capability


    Original     		PDF ITF87056DQT TB370 67e4 AN7254 AN7260 ITF87056DQT ITF87056DQT2 n2 6346

    TB370

    Abstract: No abstract text available
    Text: ITF87056DQT TM Data Sheet 5A, 20V, 0.045 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 File Number 4813.3 Features • Ultra Low On-Resistance - rDS ON = 0.045Ω, VGS = −4.5V - rDS(ON) = 0.048Ω, VGS = −4.0V - rDS(ON) = 0.077Ω, VGS = −2.5V


    Original     		PDF ITF87056DQT TB370

    Untitled

    Abstract: No abstract text available
    Text: DI9952 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • · · · · High Cell Density DMOS Technology Low On-State Resistance High Power and Current Capability Fast Switching Speed High Transient Tolerance SO-8 A 8 6 1 E 3 2 Dim Min


    Original     		PDF DI9952 I9952 DS11509

    AN7254

    Abstract: AN7260 ITF87008DQT ITF87008DQT2 TB370 67E4
    Text: ITF87008DQT Data Sheet 7.0A, 20V, 0.023 Ohm, Dual N-Channel, 2.5V Specified Power MOSFET Packaging TSSOP-8 5 2 4 Symbol DRAIN1 1 (8) DRAIN2 SOURCE1(2) (7) SOURCE2 SOURCE1(3) (6) SOURCE2 GATE1(4) Features • Ultra Low On-Resistance - rDS(ON) = 0.023Ω, VGS = 4.5V


    Original     		PDF ITF87008DQT AN7254 AN7260 ITF87008DQT ITF87008DQT2 TB370 67E4

    AN7254

    Abstract: AN7260 ITF87072DK8T MS-012AA TB370
    Text: ITF87072DK8T Data Sheet 6A, 20V, 0.037 Ohm, Dual P-Channel, 2.5V Specified Power MOSFET Packaging SO8 JEDEC MS-012AA BRANDING DASH 5 1 2 3 March 2000 File Number 4812.3 Features • Ultra Low On-Resistance - rDS(ON) = 0.037Ω, VGS = −4.5V - rDS(ON) = 0.039Ω, VGS = −4.0V


    Original     		PDF ITF87072DK8T MS-012AA) AN7254 AN7260 ITF87072DK8T MS-012AA TB370

    Untitled

    Abstract: No abstract text available
    Text: HUF76132SK8 Semiconductor Data Sheet June 1999 11.5A, 30V, 0.0115 Ohm, N-Channel, Logic Level UltraFET Power MOSFET This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76132SK8

    Untitled

    Abstract: No abstract text available
    Text: HUF76121SK8 S em iconductor Data Sheet April 1999 • Logic Level Gate Drive This N-Channel power MOSFET is manufactured using the innovative UltraFET process. This advanced process technology achieves the lowest possible on-resistance per silicon area, resulting in


    OCR Scan     		PDF HUF76121SK8 TA76121 MS-012AA

    Untitled

    Abstract: No abstract text available
    Text: intervil HUF76121SK8 Data S h e e t A p r il 1999 8A, 30V, 0.023 Ohm, N-Channel, Logic Level UltraFET Power MOSFET • Logic Level Gate Drive Formerly developmental type TA76121. PACKAGE MS-012AA • 8A, 30V • Simulation Models - Temperature Compensated PSPICE and SABER


    OCR Scan     		PDF HUF76121SK8 100ms.

    Untitled

    Abstract: No abstract text available
    Text: DI9952 DUAL N & P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features High Cell D ensity DMOS Technology Low O n-S tate Resistance High Pow er and C urrent C apability Fast Sw itching Speed High Transient Tolerance SO-8 llll P-CHANNEL tpTffl ,6 uuu A


    OCR Scan     		PDF DI9952 DS11509