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    THERMAL DESIGN AM2 Search Results

    THERMAL DESIGN AM2 Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    THERMAL DESIGN AM2 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    intel g31 chipset motherboard

    Abstract: BB17 foxconn motherboard ls 36 Motherboard Foxconn LS 36 AY21 intel marking STD 164997 AC4 honeywell g31 motherboard g31 Chipset Platform Design Guide AJ33 AJ34 AJ35 AJ36 AJ37 AJ38 AJ39 AJ40 AJ41 AJ42
    Text: Intel G35 Express Chipset Thermal and Mechanical Design Guidelines — For the Intel® 82G35 Graphics and Memory Controller Hub GMCH August 2007 Document Number: 317609-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR


    Original     		PDF 82G35 OTH97; D29081 intel g31 chipset motherboard BB17 foxconn motherboard ls 36 Motherboard Foxconn LS 36 AY21 intel marking STD 164997 AC4 honeywell g31 motherboard g31 Chipset Platform Design Guide AJ33 AJ34 AJ35 AJ36 AJ37 AJ38 AJ39 AJ40 AJ41 AJ42

    socket am2

    Abstract: am2 socket pin out Socket AM2 Design Specification socket 940 am2 pin AM2 Processor Functional am2 specification socket am2 pins AM2 socket AMd functional am2 socket AM2 retention
    Text: Socket AM2 Design Specification Publication # 31875 Revision: 3.00 Issue Date: May 2008 Advanced Micro Devices 2004–2008 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices, Inc. “AMD” products. AMD makes no representations or


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    Abstract: No abstract text available
    Text: Analog Power AM2324N N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (Ω) 0.047 @ VGS = 4.5V 20 0.055@ VGS = 2.5V These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical


    Original     		PDF AM2324N OT-23

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2303P P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.100 @ VGS = -4.5V These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC


    Original     		PDF AM2303P OT-23

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2323P P-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) rDS(on) (OHM) 0.100 @ VGS = -4.5V These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC


    Original     		PDF AM2323P OT-23

    DS-AM2322

    Abstract: No abstract text available
    Text: Analog Power AM2322N N-Channel 30-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


    Original     		PDF AM2322N OT-23 DS-AM2322

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2334N N-Channel 30-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


    Original     		PDF AM2334N OT-23

    AM2310N

    Abstract: No abstract text available
    Text: Analog Power AM2310N N-Channel Logic Level MOSFET • • • • ed These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS on assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry.


    Original     		PDF AM2310N OT-23 AM2310N

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    Abstract: No abstract text available
    Text: AM2330N Analog Power N-Channel 30-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


    Original     		PDF AM2330N OT-23

    Untitled

    Abstract: No abstract text available
    Text: AM2330NE Analog Power N-Channel 30-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


    Original     		PDF AM2330NE OT-23

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2313P P - Channel Logic Level MOSFET These miniature surface mount MOSFETs utilize High Cell Density process. Low rDS on assures minimal power loss and conserves energy, making this device ideal for use in power management circuitry. Typical applications are voltage control


    Original     		PDF AM2313P OT-23

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    Abstract: No abstract text available
    Text: Analog Power AM2332N N-Channel 20V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


    Original     		PDF AM2332N OT-23

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    Abstract: No abstract text available
    Text: Analog Power AM2371P P-Channel 100-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -100 PRODUCT SUMMARY rDS(on) (Ω) 1.2 @ VGS = -10V 1.3 @ VGS = -4.5V ID(A) -1 -0.9 Typical Applications:


    Original     		PDF AM2371P

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    Abstract: No abstract text available
    Text: Analog Power AM2392N N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 PRODUCT SUMMARY rDS(on) (Ω) 1.2 @ VGS = 10V 1.4 @ VGS = 5.5V ID(A) 0.9 0.8 Typical Applications:


    Original     		PDF AM2392N

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    Abstract: No abstract text available
    Text: Analog Power AM2390N N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 PRODUCT SUMMARY rDS(on) (Ω) 0.7 @ VGS = 10V 1.2 @ VGS = 4.5V ID(A) 1.1 0.8 Typical Applications:


    Original     		PDF AM2390N

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    Abstract: No abstract text available
    Text: Analog Power AM2381P P-Channel 80-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -80 PRODUCT SUMMARY rDS(on) (mΩ) 800 @ VGS = -10V 900 @ VGS = -4.5V ID(A) -1.1 -1.0 Typical Applications:


    Original     		PDF AM2381P

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2301P P-Channel 20-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


    Original     		PDF AM2301P OT-23

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    Abstract: No abstract text available
    Text: Analog Power AM2325P P-Channel 20-V D-S MOSFET These miniature surface mount MOSFETs utilize a high cell density trench process to provide low rDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and


    Original     		PDF AM2325P OT-23

    Untitled

    Abstract: No abstract text available
    Text: Analog Power AM2308NE N-Channel 30-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 30 PRODUCT SUMMARY rDS(on) (mΩ) 60 @ VGS = 4.5V 82 @ VGS = 2.5V ID (A) 3.5 3.0 Typical Applications:


    Original     		PDF AM2308NE

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    Abstract: No abstract text available
    Text: Analog Power AM2391P P-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -150 PRODUCT SUMMARY rDS(on) (Ω) 1.2 @ VGS = -10V 1.3 @ VGS = -4.5V ID(A) -0.9 -0.8 Typical Applications:


    Original     		PDF AM2391P

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    Abstract: No abstract text available
    Text: Analog Power AM2358N N-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 60 PRODUCT SUMMARY rDS(on) (mΩ) 92 @ VGS = 10V 107 @ VGS = 4.5V ID(A) 3.1 2.9 Typical Applications:


    Original     		PDF AM2358N

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    Abstract: No abstract text available
    Text: Analog Power AM2337P P-Channel 30-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -30 PRODUCT SUMMARY rDS(on) (mΩ) 112 @ VGS = -4.5V 172 @ VGS = -2.5V ID(A) -2.8 -2.3 Typical Applications:


    Original     		PDF AM2337P

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    Abstract: No abstract text available
    Text: Analog Power AM2359PE P-Channel 60-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) -60 PRODUCT SUMMARY rDS(on) (mΩ) 500 @ VGS = -10V 600 @ VGS = -4.5V ID (A) -1.4 -1.3 Typical Applications:


    Original     		PDF AM2359PE

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    Abstract: No abstract text available
    Text: Analog Power AM2394NE N-Channel 150-V D-S MOSFET Key Features: • Low rDS(on) trench technology • Low thermal impedance • Fast switching speed VDS (V) 150 PRODUCT SUMMARY rDS(on) (mΩ) 1200 @ VGS = 10V 1300 @ VGS = 4.5V ID(A) 0.9 0.8 Typical Applications:


    Original     		PDF AM2394NE