Untitled
Abstract: No abstract text available
Text: Power Modules Win Out, but Choose Wisely Introduction Whether evaluating step-down switching regulators at the silicon-level controller with FET , or power modules where the integration and ease of use of a more complete power supply subsystem may be preferred, system designers everywhere are under enormous pressure. They’re being tasked with integrating
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TC3967
Abstract: 2w, GaAs FET thermal conductivity ceramic FET
Text: TC3967 REV.1_04/27/2005 2W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 12.5dB Typical Linear Power Gain at 2.45GHz • High Linearity: IP3 = 43 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% • Breakdown Voltage: BVDGO ≥ 15V
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TC3967
45GHz
TC3967
TC1601N
2w, GaAs FET
thermal conductivity ceramic FET
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AE-POWER
Abstract: TC3967
Text: TC3967 REV2_20080516 2 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 2W Typical Output Power • 13dB Typical Linear Power Gain at 2.45GHz • • • High Linearity: IP3 = 43 dBm Typical High Power Added Efficiency: Nominal PAE of 35% Breakdown Voltage: BVDGO ≥ 15V
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TC3967
45GHz
TC3967
TC1601N
AE-POWER
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TC3977
Abstract: 2.45Ghz oscillator
Text: TC3977 PRE2_20050418 Preliminary 3 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 3W Typical Output Power • 12dB Typical Linear Power Gain at 2.45GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 45 dBm Typical • High Power Added Efficiency: Nominal PAE of 35%
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TC3977
45GHz
TC3977
TC1706N
2.45Ghz oscillator
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TC3889
Abstract: thermal conductivity ceramic FET TC1806
Text: TC3889 PRE.2_04/27/2005 Preliminary 5W Packaged Self-Bias PHEMT GaAs Power FETs FEATURES • 5W Typical Output Power • 12dB Typical Linear Power Gain at 2.0GHz • High Linearity: IP3 = 47 dBm Typical • High Power Added Efficiency: Nominal PAE of 35% •
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TC3889
TC3889
TC1806N
thermal conductivity ceramic FET
TC1806
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TC3879
Abstract: thermal conductivity ceramic FET
Text: TC3879 PRE1_20070518 Preliminary 7 W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT ! 7W Typical Output Power ! 10.5dB Typical Linear Power Gain at 2.45 GHz ! High Linearity: IP3 = 48.5 dBm Typical ! High Power Added Efficiency: Nominal PAE of 35%
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TC3879
TC3879
thermal conductivity ceramic FET
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TC2996D
Abstract: GaAs FET chip GRM39Y5V104Z25V
Text: TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs FEATURES • 12 W Typical Power at 2.45 GHz • 11 dB Typical Linear Power Gain at 2.45 GHz PHOTO ENLARGEMENT • High Linearity: IP3 = 50 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %
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TC2996D
TC2996D
GRM39COG0R7C50V
GRM39COG1R5C50V
1000PF
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L)
GRM39COG2R5C50V
GaAs FET chip
GRM39Y5V104Z25V
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UM 7106
Abstract: TC2696 2.45 Ghz power amplifier
Text: TC2696 REV.2_04/12/2004 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES • 2 W Typical Output Power at 2.45 GHz • 14 dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 43 dBm Typical at 2.45 GHz • • High Power Added Efficiency:
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TC2696
TC2696
TC1606
UM 7106
2.45 Ghz power amplifier
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UM 7106
Abstract: 6847 TC2696 RF FET TRANSISTOR 3 GHZ
Text: TC2696 REV4_20070507 2 W Flange Ceramic Packaged PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 2 W Typical Output Power at 6 GHz • 10 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 43 dBm Typical at 6 GHz • High Power Added Efficiency:
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TC2696
TC2696
TC1606
UM 7106
6847
RF FET TRANSISTOR 3 GHZ
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IPC-4562
Abstract: BERGQUIST mp-06503 ZPMV UL746E RD2018 HT-04503 HT-09009 Bergquist - Thermal Clad HPL Dielectric CML11-006 ASTM 5470 GAP FILLER
Text: TCDG_Cover_09.09.qxp 9/8/2009 1:43 PM Page 3 Thermal Solutions For Surface Mount Power Applications ThermalClad S E L E C T I O N G U I D E TCDG_Cover_09.09.qxp 9/8/2009 September 2009 1:43 PM Page 4 Thermal Clad®: U.S. Patent 4,810,563 and others. All statements, technical information and recommendations herein are based on tests we believe to be reliable, and
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CAP 0805 ATC 600F
Abstract: chip resistor 1206 CW-37 American Technical Ceramics GaAs FET chip GRM39Y5V104Z25V murata cw
Text: TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs PHOTO ENLARGEMENT FEATURES • 20W Typical Power at 2.45 GHz • 10dB Typical Linear Power Gain at 2.45 GHz • High Linearity: IP3 = 52 dBm Typical • High Power Added Efficiency: Nominal PAE of 40 %
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TC2997D
TC2997D
GRM39COG0R75C50V
GRM39COG2RC50V
GRM39COG1R2C50V
GRM39X7R102K50V
GRM39Y5V104Z25V
GRM42-6Y5V106Z25V
GRM31CF5E106ZA01L)
250WVDC)
CAP 0805 ATC 600F
chip resistor 1206
CW-37
American Technical Ceramics
GaAs FET chip
GRM39Y5V104Z25V
murata cw
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baara
Abstract: EL7532IY EL7532IYZ babaa EL7532 EL7532IY-T13 EL7532IY-T7 EL7532IYZ-T13 EL7532IYZ-T7 MSOP10
Text: EL7532 Data Sheet August 12, 2005 FN7435.5 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates
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EL7532
FN7435
EL7532
100ms
10-pin
baara
EL7532IY
EL7532IYZ
babaa
EL7532IY-T13
EL7532IY-T7
EL7532IYZ-T13
EL7532IYZ-T7
MSOP10
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Untitled
Abstract: No abstract text available
Text: TC2876 REV4_20070507 5 W Low-Cost Packaged PHEMT GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 5 W Typical Output Power at 6 GHz • 7 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 GHz • High Power Added Efficiency:
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TC2876
TC2876
TC1806
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Alumina submount
Abstract: No abstract text available
Text: V i s h ay I n t e r t e c h n o l o g y, I n c . V ishay Ele c tro - Films l e d sub m o u n t s ceramic thin film led package p r o d uc t o v e r v i e w w w w. v i s h a y. c o m ceramic thin film led package Vishay Electro-Films Vishay Electro-Films: Ceramic Thin Film LED Package
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operatin65-6788-6668
VMN-PL0440-1003
Alumina submount
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Untitled
Abstract: No abstract text available
Text: EL7532 Data Sheet March 16, 2005 FN7435.4 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates
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FN7435
EL7532
100ms
10-pin
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Untitled
Abstract: No abstract text available
Text: EL7532 Data Sheet January 12, 2005 FN7435.3 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates
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100ms
10-pin
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10-PIN
Abstract: EL7535 EL7535IY EL7535IY-T13 EL7535IY-T7 MSOP10
Text: EL7535 Data Sheet April 19, 2004 FN7003 Monolithic 350mA Step-Down Regulator Features The EL7535 is a synchronous, integrated FET 350mA step-down regulator in a MSOP10 package. The regulator is internally compensated, which makes it possible to use just five tiny external components to form a complete
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FN7003
350mA
EL7535
MSOP10
10-PIN
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EL7535IY-T13
EL7535IY-T7
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power combiner broadband transformers
Abstract: 4 port circulator high power duplexer HIGH POWER HIGH FREQUENCY CVD DIAMOND CHIP RESISTORS footprint X-band Gan Hemt resistor parasitic capacitance DIAMOND TECHNOLOGIES DUAL JUNCTION CIRCULATOR CT1310D RFTM 9926 transistor
Text: Diamond Rf Resistives: The Answer to High Power and Low Capacitance | Novembe. Page 1 of 6 November 2011 issue: Technical Feature Diamond Rf™ Resistives: The Answer to High Power and Low Capacitance A single 0402 resistor, manufactured on a CVD diamond substrate, can dissipate 20 W of continuous
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pHEMT 6GHz
Abstract: TC3947 tc1401n
Text: TC3947 REV2_20080516 0.5W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 0.5W Typical Output Power at 6GHz • 12dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 37 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz
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TC3947
TC3947
TC1401N
pHEMT 6GHz
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pHEMT 6GHz
Abstract: 0619 817A TC3957
Text: TC3957 REV2_20080516 1W Packaged Single-Bias PHEMT GaAs Power FETs FEATURES • 1W Typical Output Power at 6GHz • 10dB Typical Linear Power Gain at 6GHz • High Linearity: IP3 = 40 dBm Typical at 6GHz • High Power Added Efficiency: Nominal PAE of 35% at 6GHz
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TC3957
TC3957
TC1501N
pHEMT 6GHz
0619 817A
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HERMETIC SMD
Abstract: to258 EXCEL SMD SMD Devices smd diode ED CLCC 64 pins footprint TO-25X
Text: New Materials and Technologies Solve Hermetic SMD Integration Tiva Bussarakons, International Rectifier, Inc., El Segundo, California H ermetic semiconductor Package Construction SMDs surface-mount The SMD package (Figure 1 difdevices) can now be fers considerably from its predecessuccessfully and ecosor, the CLCC (ceramic leadless
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TC2896
Abstract: gm 8562 TC289 TC1806
Text: TC2896 REV4_20070507 5 W Flange Ceramic Packaged GaAs Power FETs FEATURES PHOTO ENLARGEMENT • 5 W Typical Power at 6 GHz • 8 dB Typical Linear Power Gain at 6 GHz • High Linearity: IP3 = 47 dBm Typical at 6 Ghz • High Power Added Efficiency: Nominal PAE of 40 % at 6 GHz
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TC2896
TC2896
TC1806
gm 8562
TC289
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Untitled
Abstract: No abstract text available
Text: EL7535 Data Sheet March 16, 2005 FN7003.1 Monolithic 350mA Step-Down Regulator Features The EL7535 is a synchronous, integrated FET 350mA stepdown regulator in a MSOP10 package. The regulator is internally compensated, which makes it possible to use just
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EL7532
Abstract: EL7532IL EL7532IL-T13 EL7532IL-T7 EL7532IY EL7532IY-T13 EL7532IY-T7 MSOP10
Text: EL7532 Data Sheet PRELIMINARY April 26, 2004 FN7435 Monolithic 2A Step-Down Regulator Features The EL7532 is a synchronous, integrated FET 2A step-down regulator with internal compensation. It operates with an input voltage range from 2.5V to 5.5V, which accommodates supplies of 3.3V, 5V, or a Li-Ion
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EL7532
FN7435
EL7532
100ms
EL7532IL
EL7532IL-T13
EL7532IL-T7
EL7532IY
EL7532IY-T13
EL7532IY-T7
MSOP10
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