Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    THERMAL COMPOUND WPS Search Results

    THERMAL COMPOUND WPS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCTH011AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH022AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH021AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=10μA / IDD=11.3μA / Push-pull type Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012BE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Open-drain type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation
    TCTH012AE Toshiba Electronic Devices & Storage Corporation Over Temperature Detection IC / VDD=1.7~5.5V / IPTCO=1μA / IDD=1.8μA / Push-pull type / FLAG signal latch function Visit Toshiba Electronic Devices & Storage Corporation

    THERMAL COMPOUND WPS Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    dvb strong power supply circuit diagram

    Abstract: PT5780 Pallet UHF Power Amplifier HEATSINK PASTE WPS LDU20-R thermal compound wps heatsink 58 x 38mm LDMOS NONLINEAR 27dBc 470862MHz
    Text: LDU20-R GR04080 Product Name Manufacturer's Part Number Technical Specification Summary Frequency Range 470-862MHz P1dB 30 W Analogue TV 20 Wps DVB 5,0 Wrms DTV 6,5 W Two tone 40 Wpep Typ. Gain Typ. Efficiency Temperature Range Max VSWR Working Class Supply Voltage


    Original     		LDU20-R GR04080 470-862MHz 862MHz, LDU20-R dvb strong power supply circuit diagram PT5780 Pallet UHF Power Amplifier HEATSINK PASTE WPS thermal compound wps heatsink 58 x 38mm LDMOS NONLINEAR 27dBc 470862MHz PDF

    thermal compound wps II

    Abstract: PHILIPS TANTALIUM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGF844 GSM800 EDGE power module Preliminary specification 2002 Oct 25 Philips Semiconductors Preliminary specification GSM800 EDGE power module BGF844 PINNING - SOT365C FEATURES • Low distortion to a GSM EDGE signal. PIN


    Original     		BGF844 GSM800 SCA73 613524/04/pp12 thermal compound wps II PHILIPS TANTALIUM PDF

    thermal compound wps II

    Abstract: austerlitz BGF844 SR200 SR400 SR600
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF844 GSM800 OT365C SCA75 613524/07/pp12 thermal compound wps II austerlitz BGF844 SR200 SR400 SR600 PDF

    thermal compound wps II

    Abstract: thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 GSM1900 SR200
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification Supersedes data of 2003 Nov 17 2004 Oct 11 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF1901-10 GSM1900 OT365C SCA76 R02/02/pp11 thermal compound wps II thermal compound wps philips resistor 2322-195 austerlitz heatsink catalogue transistor 6 pin SMD Z2 transistor SMD Z2 BGF1901-10 SR200 PDF

    thermal compound wps II

    Abstract: BGF1901-10 thermal compound wps GSM1900 SR200 SR400 RO5880
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1901-10 GSM1900 EDGE power module Product specification 2003 Nov 17 Philips Semiconductors Product specification GSM1900 EDGE power module BGF1901-10 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF1901-10 GSM1900 OT365C SCA75 7p/01/pp11 thermal compound wps II BGF1901-10 thermal compound wps SR200 SR400 RO5880 PDF

    MLE340

    Abstract: thermal compound wps II SR200 SR400 BGF1801-10 GSM1800
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF1801-10 GSM1800 EDGE power module Product specification 2003 Dec 15 Philips Semiconductors Product specification GSM1800 EDGE power module BGF1801-10 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF1801-10 GSM1800 OT365C SCA75 R77/01/pp11 MLE340 thermal compound wps II SR200 SR400 BGF1801-10 PDF

    BGF802-20

    Abstract: MW 882 capacitor electrolitic date codes PHILIPS TANTALIUM thermal compound wps
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGF802-20 CDMA800 power module Preliminary specification 2002 Oct 25 Philips Semiconductors Preliminary specification CDMA800 power module BGF802-20 PINNING - SOT365C FEATURES • Low distortion to CDMA signals PIN DESCRIPTION


    Original     		BGF802-20 CDMA800 CDMA2000, SCA73 613524/04/pp13 MW 882 capacitor electrolitic date codes PHILIPS TANTALIUM thermal compound wps PDF

    thermal compound wps II

    Abstract: PHILIPS TANTALIUM
    Text: DISCRETE SEMICONDUCTORS DATA SHEET BGF944 GSM900 EDGE power module Preliminary specification 2002 Nov 07 Philips Semiconductors Preliminary specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Low distortion to a GSM EDGE signal. PIN


    Original     		BGF944 GSM900 SCA73 613524/04/pp12 thermal compound wps II PHILIPS TANTALIUM PDF

    BGF901-20

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF901-20 GSM900 EDGE power module Product specification 2003 Jun 13 Philips Semiconductors Product specification GSM900 EDGE power module BGF901-20 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF901-20 GSM900 SCA75 613524/01/pp12 PDF

    BGF844

    Abstract: SR200 SR400 SR600 smd INCOMING INSPECTION procedure
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF844 GSM800 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM800 EDGE power module BGF844 FEATURES PINNING - SOT365C • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF844 GSM800 OT365C SCA75 613524/06/pp12 BGF844 SR200 SR400 SR600 smd INCOMING INSPECTION procedure PDF

    thermal compound wps II

    Abstract: austerlitz ACPR750 BGF802-20 CDMA800 RO5880 MBL257
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Feb 24 2003 Jun 13 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of


    Original     		M3D737 BGF802-20 CDMA800 OT365C SCA75 613524/05/pp12 thermal compound wps II austerlitz ACPR750 BGF802-20 RO5880 MBL257 PDF

    thermal compound wps II

    Abstract: BGF944 GSM900 SR200 SR400 RO5880 MBL813 gp 940
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2003 Feb 26 2003 Jun 06 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF944 GSM900 OT365C SCA75 613524/07/pp12 thermal compound wps II BGF944 SR200 SR400 RO5880 MBL813 gp 940 PDF

    ACPR750

    Abstract: BGF802-20 CDMA800
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF802-20 CDMA800 power module Product specification Supersedes data of 2003 Jun 13 2005 Jun 03 Philips Semiconductors Product specification CDMA800 power module BGF802-20 FEATURES PINNING - SOT365C • Typical CDMA IS95 performance at a supply voltage of


    Original     		M3D737 BGF802-20 CDMA800 OT365C SCA76 R02/06/pp12 ACPR750 BGF802-20 PDF

    BGF944

    Abstract: GSM900 SR200 SR400
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF944 GSM900 OT365C SCA75 613524/06/pp12 BGF944 SR200 SR400 PDF

    RO5880

    Abstract: rf amplifier marking catalog smd top marking code 940 smd trans. Z2
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D737 BGF944 GSM900 EDGE power module Product specification Supersedes data of 2002 Nov 12 2003 Feb 26 Philips Semiconductors Product specification GSM900 EDGE power module BGF944 PINNING - SOT365C FEATURES • Typical GSM EDGE performance at a supply voltage of


    Original     		M3D737 BGF944 GSM900 15-Aug-02) RO5880 rf amplifier marking catalog smd top marking code 940 smd trans. Z2 PDF

    TRANSISTOR SMD MARKING CODE NM

    Abstract: thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor
    Text: DISCRETE SEMICONDUCTORS DATA SHEET General RF Power Transistors for UHF 1996 Feb 12 File under Discrete Semiconductors, SC08b Philips Semiconductors RF Power Transistors for UHF General • Acceptance tests on finished products to verify conformance with the device specification. The test


    Original     		SC08b MLB049 TRANSISTOR SMD MARKING CODE NM thermal compound wps II TRANSISTOR SMD MARKING CODE wps TRANSISTOR SMD MARKING CODE KF serial number of idm TRANSISTOR SMD MARKING CODE 2d austerlitz marking codes transistors iSS SA MARKING SMD mos 250 B 340 smd Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max


    Original     		STEVAL-TDR029V1 STAC2942B STEVAL-TDR029V1 STAC2942B PDF

    sot333

    Abstract: sot390
    Text: Philips Semiconductors General QUALITY Product conformance Total Quality Management The assurance of product conformance is an integral part of our quality assurance QA practice. This is achieved by: Philips Semiconductors is a Quality Company, renowned


    Original     		QS9000 sot333 sot390 PDF

    Untitled

    Abstract: No abstract text available
    Text: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.


    Original     		STEVAL-TDR028V1 STAC2942B STEVAL-TDR028V1 STAC2942B PDF

    stac2942

    Abstract: STAC2942B STEVAL-TDR028V1 austerlitz C10100 Solder Paste, Indium 5.8 STAC265B
    Text: STEVAL-TDR028V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 370 W min. ■ Gain: 20 dB typ. ■ Efficiency: 77% typ. ■ Harmonics: - 30 dBc max.


    Original     		STEVAL-TDR028V1 STAC2942B STEVAL-TDR028V1 STAC2942B stac2942 austerlitz C10100 Solder Paste, Indium 5.8 STAC265B PDF

    stac2942

    Abstract: STAC2942B dow corning silicone compound C10100 STAC244 STAC265B "power semiconductor" phillips austerlitz
    Text: STEVAL-TDR029V1 RF power amplifier demonstration board based on the STAC2942B Features • Excellent thermal stability ■ Frequency: 87.5 - 108 MHz ■ Supply voltage: 48 V ■ Output power: 700 W min ■ Gain: 20 dB typ. ■ Efficiency: 77 % typ ■ Harmonics: - 36 dBc max


    Original     		STEVAL-TDR029V1 STAC2942B STEVAL-TDR029V1 STAC2942B stac2942 dow corning silicone compound C10100 STAC244 STAC265B "power semiconductor" phillips austerlitz PDF

    TRANSISTOR SMD MARKING CODE NM

    Abstract: philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes
    Text: DISCRETE SEMICONDUCTORS General 2000 Feb 29 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance for these parameters. The capability of process steps is


    Original     		MC3403 2N2219 1N4148 MBC775 TRANSISTOR SMD MARKING CODE NM philips capacitor part numbering system SOT123 transistor marking 04 smd-transistor DATA BOOK TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE wps DIODE marking EG 83A 2N2219 JANTX sot391 small signal transistor marking codes PDF

    smd-transistor DATA BOOK

    Abstract: smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A
    Text: DISCRETE SEMICONDUCTORS General Supersedes data of 1998 Jul 30 2000 Mar 02 Philips Semiconductors General QUALITY By means of failure-mode-and-effect analysis the critical parameters of a process are identified. Procedures are then laid down to ensure the highest level of performance


    Original     		MC3403 2N2219 1N4148 MBC775 smd-transistor DATA BOOK smd TRANSISTOR code marking sot423 TRANSISTOR SMD MARKING CODE NM emulsion paint thermal compound wps II TRANSISTOR SMD MARKING CODE KF TRANSISTOR SMD MARKING CODE QA transistor SMD MARKING CODE HF PHILIPS WIDEBAND HYBRID IC MODULES FO-83A PDF

    Untitled

    Abstract: No abstract text available
    Text: Philips Semiconductors Objective specification PowerMOS transistor Isolated version of PHP10N40E GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a full pack, plastic envelope featuring high avalanche energy capability, stable


    OCR Scan     		PHP10N40E PHX5N40E OT186A PDF