Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    THE CALCULATION OF THE POWER DISSIPATION FOR THE IGBT AND THE INVERSE DIODE IN C Search Results

    THE CALCULATION OF THE POWER DISSIPATION FOR THE IGBT AND THE INVERSE DIODE IN C Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    CUZ24V Toshiba Electronic Devices & Storage Corporation Zener Diode, 24 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ13V Toshiba Electronic Devices & Storage Corporation Zener Diode, 13.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    XCUZ36V Toshiba Electronic Devices & Storage Corporation Zener Diode, 36.0 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    CUZ12V Toshiba Electronic Devices & Storage Corporation Zener Diode, 12 V, USC Visit Toshiba Electronic Devices & Storage Corporation
    MUZ5V6 Toshiba Electronic Devices & Storage Corporation Zener Diode, 5.6 V, USM Visit Toshiba Electronic Devices & Storage Corporation

    THE CALCULATION OF THE POWER DISSIPATION FOR THE IGBT AND THE INVERSE DIODE IN C Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Wacker Silicones p12

    Abstract: the calculation of the power dissipation for the igbt and the inverse diode in circuits Fischer wlpf 50 semikron SKHI 22 AR skm100gb121d semikron SKHI 21 AR SKM200GB122D skm 100 gb 121d rifa semikron SKHI 21 AR application note
    Text: 6. SEMITRANS IGBT Modules Insulated Gate Bipolar Transistor Modules Features Typical Applications • MOS input (voltage controlled) • Frequency converters for AC motor drives • N channel • DC servo and robot drives • Low saturation voltage series available


    Original
    PDF

    bi-directional switches IGBT

    Abstract: skm 254 f gax-2 semikron case d 56 hardware Semikron SKM SEMIKRON 1200 V 95 A
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1700 1700 220 / 150 440 / 300 ± 20 1250 –40 . +150 (125) 4000 Class F 40/125/56 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms


    Original
    PDF

    Semikron SKM 145 GB 124 DN

    Abstract: skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits
    Text: SKM 145 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original
    PDF 3K7/IE32 Semikron SKM 145 GB 124 DN skm 40 gb 124 d M145GB124DN LB 124 transistor the calculation of the power dissipation for the igbt and the inverse diode in circuits

    SKM 300 CIRCUIT

    Abstract: SKM 400 gal 124 IGBT D 145 SKM 300 GB 123 D SKM 600 gb semikron skm 150 gb 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC


    Original
    PDF

    skm 152 ga 123

    Abstract: SKM 200 GB 102 D semikron skm 152 ga 123 SKM 300 GA 102 D 1502c semikron skm 152 ga skm 152 ga transistor 1502c SKM200GBD
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Diodes IF= – IC IFM= – ICM Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1


    Original
    PDF 1502tic 1502trg skm 152 ga 123 SKM 200 GB 102 D semikron skm 152 ga 123 SKM 300 GA 102 D 1502c semikron skm 152 ga skm 152 ga transistor 1502c SKM200GBD

    Untitled

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 190 / 145 380 / 290 ± 20 800 –40 . + 150 (125) 2 500 RGE = 20 kΩ Tcase = 25/70 °C Tcase = 25/70 °C; tp = 1 ms per IGBT, Tcase = 25 °C


    Original
    PDF

    SKM 400 gal 124 IGBT

    Abstract: skm 40 gb 124 d the calculation of the power dissipation for the igbt and the inverse diode in circuits semikron skm 300 gar 124 IGBT inverter calculation FOR A UPS SKM 150 GB 124 D
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400


    Original
    PDF

    skm 200 GB 12 V

    Abstract: SKM 300 CIRCUIT SKM 75 GAL 123 IGBT SKM 200 GAL 173 D IGBT SKM 300 GB 12 V skm 40 gb 123 d semikron skm 150 gb 123 SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions Values 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 8) Inverse Diode IF= – IC


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/60 °C Tcase = 25/60 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 600 600 475 / 400


    Original
    PDF

    skm195gal

    Abstract: SEMIKRON book
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 1200 1200 290 / 200 580 / 400 ± 20 1250 –40 . +150 (125) 2500 RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C


    Original
    PDF

    LB 124D

    Abstract: skm 40 gb 124 d 400G124 the calculation of the power dissipation for the igbt and the inverse diode in circuits with the si DIODE LS15
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68 T.1 1200 1200 570 / 400


    Original
    PDF

    skm 195 gb 125 dn

    Abstract: SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124
    Text: SKM 195 GB 124 DN . Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate Units RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. IEC 60721-3-3 IEC 68 T.1


    Original
    PDF 3K7/IE32 skm 195 gb 125 dn SKM 400 gal 124 IGBT SEMIKRON skm 40 gb 124 d tr 30 f 124

    F120A

    Abstract: No abstract text available
    Text: Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Visol humidity climate 600 600 200 / 145 400 / 290 ± 20 700 –40 . +150 (125) 2500 RGE = 20 kΩ Tcase = 25/75 °C Tcase = 25/75 °C; tp = 1 ms per IGBT, Tcase = 25 °C


    Original
    PDF

    skm 152 ga 123

    Abstract: semikron skm 152 ga 123 semikron skm 152 ga skm 152 ga SKM 300 CIRCUIT SKM 300 GA 102 D 1502C SKM 200 GB 102 D SKM 200 CIRCUIT skm 22 gal 123
    Text: Absolute Maximum Ratings Symbol VCES VCGR IC ICM VGES Ptot Tj, Tstg Visol humidity climate Conditions 1) RGE = 20 kΩ Tcase = 25/80 °C Tcase = 25/80 °C; tp = 1 ms per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode IF= – IC Tcase = 25/80 °C


    Original
    PDF

    Untitled

    Abstract: No abstract text available
    Text: s e M IK R O n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Units 600 600 2 3 0 /1 9 5 460 / 390 ±20 700 -4 0 . +150 125) 2 500 Class F 40/125/56 Rge = 20 k£^ Toase = 25/60 "C Tease = 25/60 °C; tp = 1 ms Ptot Tj, (Tstg)


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: se MIKROn zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Ptot Tj, Tstg) V¡sol humidity climate Units 1200 1200 145 /110 290 / 220 ±20 830 ^ 0 . +150 (125) 2500 Rge = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: se MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S V cG R lc IcM = 20 Toase = 25/80 °C Tease = 25/80 °C; tp = 1 ms R ge V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Visol humidity climate AC, 1 min. DIN 40040 DIN IEC 68T.1


    OCR Scan
    PDF L124D GAR124D

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRO n Absolute Maximum Ratings Conditions ' Values Symbol VcES VcGR lc ICM V ges = 20 k£2 Tease = 25/80 °C Rge Tease = 25/80 °C; tp = 1 ms p e r IG BT, Tease = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Diodes If= - lc IfM= - IcM Tease = 25/80 °C


    OCR Scan
    PDF 300GB219

    Untitled

    Abstract: No abstract text available
    Text: s e M IKRO n Absolute Maximum Ratings Conditions ' Values VcES VcGR lc = 20 k£2 Tcase = 25/80 °C ICM Tcase = 25/80 °C; tp 1200 1200 1 0 0 /9 0 2 0 0 /1 8 0 ±20 690 150 125 2 500 Symbol Units Rge = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode


    OCR Scan
    PDF

    semikron SKm GAL 123D

    Abstract: CASED61
    Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions VcES VcGR lc Rge IC M Values Units ' 20 k £ 2 Tcase = 25/80 °C Tcase = 25/80 °C; tp = = 1 ms V ges AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Inverse Diode Tcase = If= - lc IfM= - IcM Tcase = tp = 10 Ifsm


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: s e M IK R O n Absolute Maximum Ratings Symbol Conditions ' VcES VcGR lc = 20 k£2 Tcase = 25/80 ICM Tcase = 25/80 °C; tp R ge °C = 1 ms V ges Ptot Tj, Tstg Vsol humidity climate per IGBT, Tcase = 25 °C AC, 1 min. DIN 40 040 DIN IEC 68 T.1 Values Units


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: 1 back IT S E M IK R D N zurück Absolute Maximum Ratings Symbol VcES VcGR lc ICM Vges Ptot Tj, Tstg Visol humidity climate Values Units Conditions ' 1200 1200 300 / 220 600 / 440 ±20 1660 - 4 0 .+ 1 5 0 (125) 2 500 Class F 40/125/56 Rge = 20 k£2 Tease = 25/80 °C


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: se MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 Units V cE S lc RGe = 20 k£l T oase = 25/65 °C IcM T oase = 25/65 °C; tp = 1 ms V cG R V ges Ptot per IGBT, T oase = 25 °C Tj, Tstg) Vjsol humidity climate AC, 1 min. DIN 40 040 DIN IEC 68T.1


    OCR Scan
    PDF CASED67

    Untitled

    Abstract: No abstract text available
    Text: s e MIKRO n zurück Absolute Maximum Ratings Values Symbol Conditions 1 VcES VcGR lc IcM V ges Ptot Tj, Tstg Visol humidity climate Units Rge = 20 Toase = 25/70 °C Tease = 25/70 °C; tp = 1 ms per IGBT, T oase = 25 °C AC, 1 min. DIN 40040 DIN IEC 68T.1


    OCR Scan
    PDF