2 watt rf transistor
Abstract: No abstract text available
Text: 2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor is
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55BT-1,
2 watt rf transistor
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Untitled
Abstract: No abstract text available
Text: MMBTSC2712LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features ˙High voltage and high current: VCEO=50V, IC=150mA max
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MMBTSC2712LT1
150mA
OT-23
Junctio30
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Untitled
Abstract: No abstract text available
Text: MMBTSC2712LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features ˙High voltage and high current: VCEO=50V, IC=150mA max
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MMBTSC2712LT1
150mA
OT-23
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all transistor book
Abstract: mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data
Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1999 Aug 16 2003 Apr 15 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A
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M3D259
BLS3135-50
BLS3135-50
OT422A
BLS313550
all transistor book
mcd760
free transistor equivalent book
free transistor equivalent book download
MCD761
all transistor data sheet book download
free transistor and ic equivalent data
transistor number code book FREE
transistor data book free
free download transistor and ic equivalent data
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Untitled
Abstract: No abstract text available
Text: MMBTSA1298LT1 PNP Silicon Epitaxial Planar Transistor for low frequency power amplifier and power switching applications The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors manufactured in different pin configurations.
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MMBTSA1298LT1
OT-23
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Untitled
Abstract: No abstract text available
Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA
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MMBTSA1505LT1
-400mA
OT-23
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Untitled
Abstract: No abstract text available
Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA
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MMBTSA1505LT1
-400mA
OT-23
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cw 7808
Abstract: BLF0810-180 7808 voltage regulator MDB162 BLF0810S-180 MDB161 gp 538 e/ic 7808 pin out
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF0810-180; BLF0810S-180
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M3D379
M3D461
BLF0810-180;
BLF0810S-180
SCA75
613524/06/pp16
cw 7808
BLF0810-180
7808 voltage regulator
MDB162
BLF0810S-180
MDB161
gp 538
e/ic 7808 pin out
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transistor SMD Z2
Abstract: 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain
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M3D438
BLA1011-2
OT538A
SCA75
R77/05/pp9
transistor SMD Z2
200B
BLA1011-2
MGU487
SOT538A
The 2003 is a COMMON BASE transistor
smd transistor z1
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Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 PINNING - SOT538A FEATURES • High power gain
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M3D438
BLA1011-2
OT538A
SCA75
R77/05/pp9
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st 8050d
Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As
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st 8050d
Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As
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st 8050d
Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As
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st 8050d
Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As
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cw 7808
Abstract: TRANSISTOR CW 7808 7808 voltage regulator 7808 cw MDB172 BLF0810-90 BLF0810S-90 MDB177 top 8901 gp 647
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF0810-90; BLF0810S-90
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M3D379
M3D461
BLF0810-90;
BLF0810S-90
SCA75
613524/03/pp16
cw 7808
TRANSISTOR CW 7808
7808 voltage regulator
7808 cw
MDB172
BLF0810-90
BLF0810S-90
MDB177
top 8901
gp 647
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2SD965
Abstract: C8010 2sd965 transistor
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SD965
2SD965
C8010
2sd965 transistor
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2sd965
Abstract: C8010 C5001
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SD965
2sd965
C8010
C5001
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Untitled
Abstract: No abstract text available
Text: DISCRETE SEMICONDUCTORS DAT M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 PINNING - SOT467C FEATURES • High power gain
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M3D381
BLA1011-10
OT467C
SCA75
R77/05/pp9
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BLA1011-10
Abstract: 200B
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain
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M3D381
BLA1011-10
OT467C
SCA75
R77/05/pp9
BLA1011-10
200B
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2SD965
Abstract: 2sd965 transistor r10100 C8010 2SD965P
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SD965
2SD965
2sd965 transistor
r10100
C8010
2SD965P
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2sd965 transistor
Abstract: 2SD965 2SD96
Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.
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2SD965
2sd965 transistor
2SD965
2SD96
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MBL105
Abstract: mbl10 top 8901
Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Preliminary specification 2003 Sep 22 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF900-110; BLF900S-110 FEATURES APPLICATIONS
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M3D379
M3D461
BLF900-110;
BLF900S-110
SCA75
613524/03/pp14
MBL105
mbl10
top 8901
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acrian RF POWER TRANSISTOR
Abstract: Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc
Text: 0 1 8 2 9 9 8 ACRI'AN. INC h, Hü Æ& GENERAL T? SPI ÜP D E ;| 0 1 0 2 ^ 0 ^!jjj|jjjgjgg 0DD1403 4 J ^0 |j|ijj|jUp*^ 2003 D E S C R IP T IO N The 2003 is a common base transistor capable of providing 3 Watts of C W RF output power in the 1000-2000 MHz. This hermetically sealed transistor is specifically designed for
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0DD1403
Vcb-28V
Ic-100mA
Tf-25Â
acrian RF POWER TRANSISTOR
Acrian T9
acrian RF POWER TRANSISTOR T9
acrian inc
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2SC383TM
Abstract: 2SC388ATM 2SC388A S100 transistor 025-12S
Text: TO SH IB A 2SC383TM,388ATM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 8 3 T M , TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hjrE ' 2 S C 3 8 8 A T M U nit in mm MAXIMUM RATINGS (Ta = 25°C)
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2SC383TM
2SC383TM
388ATM
2SC388ATM
SC-43
45MHz
2SC388A
S100 transistor
025-12S
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