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    THE 2003 IS A COMMON BASE TRANSISTOR Search Results

    THE 2003 IS A COMMON BASE TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM10N961L Toshiba Electronic Devices & Storage Corporation N-ch MOSFET x 2, Common drain, VSSS=30 V, 0.0128 Ω@10V, TCSPAG-341501 Visit Toshiba Electronic Devices & Storage Corporation
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HMFYAFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP80-1212-0.50-003 Visit Toshiba Electronic Devices & Storage Corporation
    TMPM3HPFYADFG Toshiba Electronic Devices & Storage Corporation Arm Cortex-M3 Core Based Microcontroller/32bit/P-LQFP128-1420-0.50-001 Visit Toshiba Electronic Devices & Storage Corporation

    THE 2003 IS A COMMON BASE TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    2 watt rf transistor

    Abstract: No abstract text available
    Text: 2003 3 Watt - 28 Volts, Class C Microwave 2000 MHz GENERAL DESCRIPTION CASE OUTLINE The 2003 is a COMMON BASE transistor capable of providing 3 Watts Class C, RF output power at 2000 MHz. Gold metalization and diffused ballasting are used to provide high reliability and supreme ruggedness. The transistor is


    Original     		PDF 55BT-1, 2 watt rf transistor

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC2712LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features ˙High voltage and high current: VCEO=50V, IC=150mA max


    Original     		PDF MMBTSC2712LT1 150mA OT-23 Junctio30

    Untitled

    Abstract: No abstract text available
    Text: MMBTSC2712LT1 NPN Silicon Epitaxial Planar Transistor for audio frequency general purpose amplifier applications. The transistor is subdivided into four groups O, Y, G and L, according to its DC current gain. Features ˙High voltage and high current: VCEO=50V, IC=150mA max


    Original     		PDF MMBTSC2712LT1 150mA OT-23

    all transistor book

    Abstract: mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data
    Text: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D259 BLS3135-50 Microwave power transistor Product specification Supersedes data of 1999 Aug 16 2003 Apr 15 Philips Semiconductors Product specification Microwave power transistor BLS3135-50 FEATURES PINNING - SOT422A


    Original     		PDF M3D259 BLS3135-50 BLS3135-50 OT422A BLS313550 all transistor book mcd760 free transistor equivalent book free transistor equivalent book download MCD761 all transistor data sheet book download free transistor and ic equivalent data transistor number code book FREE transistor data book free free download transistor and ic equivalent data

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1298LT1 PNP Silicon Epitaxial Planar Transistor for low frequency power amplifier and power switching applications The transistor is subdivided into two groups, O and Y according to its DC current gain. On special request, these transistors manufactured in different pin configurations.


    Original     		PDF MMBTSA1298LT1 OT-23

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA


    Original     		PDF MMBTSA1505LT1 -400mA OT-23

    Untitled

    Abstract: No abstract text available
    Text: MMBTSA1505LT1 PNP Silicon Epitaxial Planar Transistor For switching and general purpose applications. The transistor is subdivided into three groups O, Y and GR, according to its DC current gain. Features Excellent hFE linearity: hFE=25 min at VCE=-6V, IC=-400mA


    Original     		PDF MMBTSA1505LT1 -400mA OT-23

    cw 7808

    Abstract: BLF0810-180 7808 voltage regulator MDB162 BLF0810S-180 MDB161 gp 538 e/ic 7808 pin out
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-180; BLF0810S-180 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF0810-180; BLF0810S-180


    Original     		PDF M3D379 M3D461 BLF0810-180; BLF0810S-180 SCA75 613524/06/pp16 cw 7808 BLF0810-180 7808 voltage regulator MDB162 BLF0810S-180 MDB161 gp 538 e/ic 7808 pin out

    transistor SMD Z2

    Abstract: 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 FEATURES PINNING - SOT538A • High power gain


    Original     		PDF M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9 transistor SMD Z2 200B BLA1011-2 MGU487 SOT538A The 2003 is a COMMON BASE transistor smd transistor z1

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D438 BLA1011-2 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-2 PINNING - SOT538A FEATURES • High power gain


    Original     		PDF M3D438 BLA1011-2 OT538A SCA75 R77/05/pp9

    st 8050d

    Abstract: st8050c st 8050C ST8050D transistor b 8050 st 8050 8050B transistor br 8050 transistor 8050d 8050c transistor
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: 8050 TRANSISTOR PNP BR 8050 BR 8050 D transistor br 8050 st8050c st 8050C 8050 pnp transistor NPN transistor 8050d 8050D
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: st8050c st8050d BR 8050 D st 8050C 8050c transistor 8050 TRANSISTOR PNP BR 8050 st 8050 8050B
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    st 8050d

    Abstract: NPN transistor 8050d st8050c TRANSISTOR c 8050 transistor br 8050 BR 8050 D BR 8050 transistor b 8050 8050 pnp transistor 8050 TRANSISTOR PNP
    Text: ST 8050 NPN Silicon Epitaxial Planar Transistor for switching and amplifier applications. Especially suitable for AF-driver stages and low power output stages. The transistor is subdivided into four groups, B, C, D and E, according to its DC current gain. As


    Original     		PDF

    cw 7808

    Abstract: TRANSISTOR CW 7808 7808 voltage regulator 7808 cw MDB172 BLF0810-90 BLF0810S-90 MDB177 top 8901 gp 647
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF0810-90; BLF0810S-90 Base station LDMOS transistors Product specification Supersedes data of 2003 May 09 2003 Jun 12 Philips Semiconductors Product specification Base station LDMOS transistors BLF0810-90; BLF0810S-90


    Original     		PDF M3D379 M3D461 BLF0810-90; BLF0810S-90 SCA75 613524/03/pp16 cw 7808 TRANSISTOR CW 7808 7808 voltage regulator 7808 cw MDB172 BLF0810-90 BLF0810S-90 MDB177 top 8901 gp 647

    2SD965

    Abstract: C8010 2sd965 transistor
    Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SD965 2SD965 C8010 2sd965 transistor

    2sd965

    Abstract: C8010 C5001
    Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SD965 2sd965 C8010 C5001

    Untitled

    Abstract: No abstract text available
    Text: DISCRETE SEMICONDUCTORS DAT M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 PINNING - SOT467C FEATURES • High power gain


    Original     		PDF M3D381 BLA1011-10 OT467C SCA75 R77/05/pp9

    BLA1011-10

    Abstract: 200B
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D381 BLA1011-10 Avionics LDMOS transistor Product specification Supersedes data of 2002 Oct 02 2003 Nov 19 Philips Semiconductors Product specification Avionics LDMOS transistor BLA1011-10 FEATURES PINNING - SOT467C • High power gain


    Original     		PDF M3D381 BLA1011-10 OT467C SCA75 R77/05/pp9 BLA1011-10 200B

    2SD965

    Abstract: 2sd965 transistor r10100 C8010 2SD965P
    Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SD965 2SD965 2sd965 transistor r10100 C8010 2SD965P

    2sd965 transistor

    Abstract: 2SD965 2SD96
    Text: ST 2SD965 NPN Silicon Epitaxial Planar Transistor for low-frequency power and stroboscope applications. The transistor is subdivided into three groups P, Q and R, according to its DC current gain. On special request, these transistors can be manufactured in different pin configurations.


    Original     		PDF 2SD965 2sd965 transistor 2SD965 2SD96

    MBL105

    Abstract: mbl10 top 8901
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D379 M3D461 BLF900-110; BLF900S-110 Base station LDMOS transistors Preliminary specification 2003 Sep 22 Philips Semiconductors Preliminary specification Base station LDMOS transistors BLF900-110; BLF900S-110 FEATURES APPLICATIONS


    Original     		PDF M3D379 M3D461 BLF900-110; BLF900S-110 SCA75 613524/03/pp14 MBL105 mbl10 top 8901

    acrian RF POWER TRANSISTOR

    Abstract: Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc
    Text: 0 1 8 2 9 9 8 ACRI'AN. INC h, Hü Æ& GENERAL T? SPI ÜP D E ;| 0 1 0 2 ^ 0 ^!jjj|jjjgjgg 0DD1403 4 J ^0 |j|ijj|jUp*^ 2003 D E S C R IP T IO N The 2003 is a common base transistor capable of providing 3 Watts of C W RF output power in the 1000-2000 MHz. This hermetically sealed transistor is specifically designed for


    OCR Scan     		PDF 0DD1403 Vcb-28V Ic-100mA Tf-25Â acrian RF POWER TRANSISTOR Acrian T9 acrian RF POWER TRANSISTOR T9 acrian inc

    2SC383TM

    Abstract: 2SC388ATM 2SC388A S100 transistor 025-12S
    Text: TO SH IB A 2SC383TM,388ATM TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2 S C 3 8 3 T M , TV FINAL PICTURE IF AMPLIFIER APPLICATIONS. . High Gain : Gpe = 33dB Typ. (f=45M Hz) • Good Linearity of hjrE ' 2 S C 3 8 8 A T M U nit in mm MAXIMUM RATINGS (Ta = 25°C)


    OCR Scan     		PDF 2SC383TM 2SC383TM 388ATM 2SC388ATM SC-43 45MHz 2SC388A S100 transistor 025-12S