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TH430 Abstract: Transistor TH430 D TH430 D 318bc Text: TH430 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TH430 is Designed for SSB ad VHF communications. This device utilizes emitter ballasting for improved ruggedness and reliability. PACKAGE STYLE 0.500 4L FLG .112x45° L A FEATURES: E FULL R • PG = 14.5 dB min. at 220 W/30 MHz	Original	PDF	TH430 TH430 112x45° Transistor TH430 D TH430 D 318bc
TH430 Abstract: arco 429 diode gp 429 SD1728 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS . . . . OPTIMIZED FOR SSB 30 MHz 50 VOLTS IMD − 30 dB GOLD METALLIZATION COMMON EMITTER P OUT = 250 W PEP WITH 14.5 dB GAIN .550 4LFL (M177) epoxy sealed ORDER CODE SD1728 BRANDING TH430 PIN CONNECTION	Original	PDF	SD1728 TH430) TH430 SD1728 TH430 arco 429 diode gp 429 M177 TRANSISTOR AS PLANAR PEP 470uf 40v arco 427 SD1728 M177 th430 e
TH430 Abstract: SD1728 M177 TH430 D Transistor TH430 D M177 SD1728 Text: SD1728 TH430 RF & MICROWAVE TRANSISTORS HF SSB APPLICATION • OPTIMIZED FOR SSB • 30 MHz • 50 V • IMD = -30 dB • GOLD METALLIZATION • COMMON EMITTER • POUT = 250 W PEP WITH 14.5 dB GAIN M177 epoxy sealed DESCRIPTION The SD1728 is a 50 V epitaxial silicon NPN planar	Original	PDF	SD1728 TH430) SD1728 TH430 TH430 SD1728 M177 TH430 D Transistor TH430 D M177
SD1730 Abstract: TH430 power transistors cross reference SD1224-10 SD1405 SD1407 HF TRANSISTORS SD1487 SD1726 SD1727 Text: SILICON POWER TRANSISTORS HF TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and amateur communication equipment. 2-30 MHz CLASS AB LINEAR, COMMON EMITTER, HF/SSB	Original	PDF	SD1405 SD1487 SD1224-10 SD1407 SD1729 SD1730 SD1411 SD1733 SD1726 SD1727 SD1730 TH430 power transistors cross reference SD1224-10 SD1405 SD1407 HF TRANSISTORS SD1487 SD1726 SD1727
transistor 5cw Abstract: transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10 Text: Richardson Electronics 800-737-6937 www.rfpowernet.com RF POWER TRANSISTOR SELECTION GUIDE August 2000 Table of Contents Preface Supplier - Product Matrix Tab Page HF VHF UHF VHF-UHF TV LINEAR General Purpose Cellular, GSM, Paging PCS, DCS, WLL 3G, WCDMA, UMTS, CDMA2000	Original	PDF	CDMA2000 2N6084 BLV102 CA5815CS D1020UK LF2810A MRF175LV MSC75652 PH1600-7 SD1466 transistor 5cw transistor 5cw 61 sd1466 transistor 6cw TRANSISTOR REPLACEMENT GUIDE 6CW transistor MS3016 transistor selection guide PH1516-2 STM1645-10
FLS2- transistor Abstract: No abstract text available Text: r i 7 ^ 7# . S G S - T H O M S O N M M » [ IC T [ » ! ] [ 1 §_ S D 1728 (T H 4 30 RF & MICROWAVE TRANSISTORS _ HF SSB APPLICATIONS • OPTIMIZED FOR SSB . 30 MHz . 50 VOLTS > IMD - 30 dB ■ GOLD METALLIZATION . COMMON EMITTER	OCR Scan	PDF	SD1728 TH430 SD1728 FLS2- transistor
SD1730 Abstract: TH430 M153 "class AB Linear" hf 801733 SD1726 SD1728 M113 M164 SD1224-10 Text: SILICON POWER TRANSISTORS Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and am ateur communication equipment. .400 x .425 6LFL M153 .380 4LFL (M113) .550 Dia .500 4L STUD	OCR Scan	PDF	SD1285* SD1405* SD1487 SD1224-10* SD1407* SD1729 SD1730 TH430 M153 "class AB Linear" hf 801733 SD1726 SD1728 M113 M164 SD1224-10
SD1446 Abstract: SD140 an power 88-108 mhz M111 SD1224-10 M113 M164 SD1285 SD1405 SD1407 Text: S IL IC O N P O W E R T R A N S IS T O R S Characterized for broadband amplifier operation, SGS-THOMSON 2-30 MHz devices provide high linear power output for a variety of military, commercial and am ateur com munication equipment. .400 x .425 6LFL M153 .380 4LFL	OCR Scan	PDF	SD1285* SD1405* SD1487 SD1224-10* SD1407* SD1729 SD1457 SD1460 SD1483 SD1013 SD1446 SD140 an power 88-108 mhz M111 SD1224-10 M113 M164 SD1285 SD1405 SD1407