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    TH 2190 MOSFET Search Results

    TH 2190 MOSFET Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TCK424G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK425G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK423G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    TCK422G Toshiba Electronic Devices & Storage Corporation MOSFET Gate Driver IC, 2.7 to 28 V, External MOSFET Gate drive / Inrush current reducing, WCSP6G Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation

    TH 2190 MOSFET Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    TH 2190 Transistor

    Abstract: TH 2190 mosfet z24 mosfet
    Text: Freescale Semiconductor Technical Data Rev. 2, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21240R6 TH 2190 Transistor TH 2190 mosfet z24 mosfet PDF

    transistor rf m 1104

    Abstract: TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6
    Text: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 Freescale Semiconductor, Inc. N–Channel Enhancement–Mode Lateral MOSFET


    Original     		MRF5P21240/D MRF5P21240R6 transistor rf m 1104 TH 2190 517D107M050BB6A CDR33BX104AKWS MRF5P21240R6 PDF

    TH 2190 Transistor

    Abstract: No abstract text available
    Text: MOTOROLA Order this document by MRF5P21240/D SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line RF Power Field Effect Transistor MRF5P21240R6 N–Channel Enhancement–Mode Lateral MOSFET Designed for W–CDMA base station applications with frequencies from 2110


    Original     		MRF5P21240/D MRF5P21240R6 TH 2190 Transistor PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21240HR6 MRF5P21240HR6 PDF

    Untitled

    Abstract: No abstract text available
    Text: MRF5P21240 Rev. 2, 12/2004 Freescale Semiconductor Technical Data RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21240 MRF5P21240R6 PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21240HR6 PDF

    MOSFET marking Z4

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 0, 6/2005 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21240HR6 MRF5P21240HR6 MOSFET marking Z4 PDF

    TH 2190 mosfet

    Abstract: th 2190 A114 A115 AN1955 C101 JESD22 MRF5P21240HR6 TH 2190 Transistor
    Text: Freescale Semiconductor Technical Data Document Number: MRF5P21240HR6 Rev. 1, 5/2006 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF5P21240HR6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF5P21240HR6 TH 2190 mosfet th 2190 A114 A115 AN1955 C101 JESD22 MRF5P21240HR6 TH 2190 Transistor PDF

    TH 2190 mosfet

    Abstract: UTT30P06
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high


    Original     		UTT30P06 UTT30P06 O-220 UTT30P06L-TA3-T UTT30P06G-TA3-T QW-R502-622 TH 2190 mosfet PDF

    th 2190

    Abstract: NIPPON CAPACITORS 400S A114 A115 C101 JESD22 MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 1, 5/2006 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 NIPPON CAPACITORS 400S A114 A115 C101 JESD22 MRF6S21050L MRF6S21050LSR3 PDF

    th 2190

    Abstract: MRF6S21050LR3 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 th 2190 MRF6S21050L NIPPON CAPACITORS MRF6S21050L BASE TH 2190 Transistor 400S A114 A115 C101 PDF

    NIPPON CAPACITORS

    Abstract: j668
    Text: MRF6S21050L Rev. 0, 3/2005 Freescale Semiconductor Technical Data RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 NIPPON CAPACITORS j668 PDF

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD Preliminary UTT30P06 Power MOSFET 60V, 30A P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UTT30P06 is a P-channel power MOSFET using UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance. It can also withstand high


    Original     		UTT30P06 UTT30P06 UTT30P06L-TA3-T UTT30P06G-TA3-T QW-R502-622 PDF

    motorola 5373

    Abstract: MRF21045
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistors MRF21045R3 MRF21045SR3 N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21045R3 MRF21045SR3 motorola 5373 MRF21045 PDF

    TT 2190 equivalent

    Abstract: TH 2190 mosfet isolated IRCP054 TH 2190 mosfet IRCP054 equivalent 64a diode
    Text: PD-9.733 International S Rectifier IRCP054 HEXFET Power MOSFET Dynamic dv/dt Rating Current Sense Isolated Central Mounting Hole 175°C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements V DSS= 6 0 V ^DS on = 0 .0 1 4 Q lD = 7 0 *A


    OCR Scan     		IRCP054 TT 2190 equivalent TH 2190 mosfet isolated IRCP054 TH 2190 mosfet IRCP054 equivalent 64a diode PDF

    TH 2190

    Abstract: J752 j668 400S A114 A115 AN1955 JESD22 Nippon chemi MRF6S21050LR3
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 TH 2190 J752 j668 400S A114 A115 AN1955 JESD22 Nippon chemi PDF

    2120 r1

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21180 MRF21180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF21180 MRF21180S 2120 r1 PDF

    MOSFET Transistors IRL

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF Sub–Micron MOSFET Line MRF21180 MRF21180S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF21180 MRF21180S MOSFET Transistors IRL PDF

    Untitled

    Abstract: No abstract text available
    Text: Ordering number : ENN6672~] N-Channel Silicon MOSFET 2SK3449 ISM lYO i DC / DC Converter Applications Package Dimensions Features unit : mm • Low ON-resistance. • Ultrahigh-speed switching. • 4V drive. 2190 [2SK3449] 3.3, 0,7 1 : Source 2 : Drain 3 : Gate


    OCR Scan     		ENN6672~ 2SK3449 2SK3449] -126M PDF

    wb4 marking

    Abstract: J152 mosfet transistor 2110 transistor
    Text: Freescale Semiconductor Technical Data Rev. 5, 12/2004 RF Power Field Effect Transistor N - Channel Enhancement - Mode Lateral MOSFET MRF21180R6 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applications.


    Original     		MRF21180R6 wb4 marking J152 mosfet transistor 2110 transistor PDF

    mosfet 400 mhz

    Abstract: MRF21045
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045R3 MRF21045S MRF21045SR3 RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21045 MRF21045R3 MRF21045S MRF21045SR3 mosfet 400 mhz PDF

    MRF21045

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Rev. 10, 12/2004 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF21045LR3 MRF21045LSR3 Designed for W- CDMA base station applications with frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N - P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21045LR3 MRF21045LSR3 MRF21045 PDF

    MRF21045

    Abstract: No abstract text available
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line MRF21045 MRF21045S RF Power Field Effect Transistors N–Channel Enhancement–Mode Lateral MOSFETs Designed for W–CDMA base station applications at frequencies from 2110 to 2170 MHz. Suitable for TDMA, CDMA and multicarrier amplifier applicat i o n s . To b e u s e d i n C l a s s A B f o r P C N – P C S / c e l l u l a r r a d i o a n d W L L


    Original     		MRF21045 MRF21045S PDF

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRF6S21050L Rev. 2, 12/2008 RF Power Field Effect Transistors N - Channel Enhancement - Mode Lateral MOSFETs MRF6S21050LR3 MRF6S21050LSR3 Designed for W - CDMA base station applications with frequencies from 2110


    Original     		MRF6S21050L MRF6S21050LR3 MRF6S21050LSR3 MRF6S21050LR3 PDF