2SC594
Abstract: 2SA594 OOD7427 N-325 70M40 2SA59
Text: TOSHIBA O I S CRETE/OPTO} 9097250 TO SHIBA DE J t O T T E S Q OOD7427 E ~SÍ <D I S C R E T E / O P T O 5òC 07^27 0 /13/-2-3 SILICON NPN EPITA XIA L TYPE PCT PROCESS) Unit- in mm HIGH FREQUENCY AMPLIFIER APPLICATIONS. j2fe.S9M AX. VIDEO AMPLIFIER APPLICATIONS.
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OOD7427
200MHz
100mA,
2SA594.
2SC594
2SA594
N-325
70M40
2SA59
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BST 063 133
Abstract: No abstract text available
Text: _ ^ PRELIMINARY -AS . •— FEATURES: ■ ULTRA LOW NOISE FIGURE ■ GATE LENGTH < 0.2 ixm ■ T-SHAPED GATE ■ CHIP FORM 0.75 dB at f = 18 GHz ■ SUPER HIGH ASSOCIATED GAIN 11 dB at f = 18 GHz ■ H IG H M AXIM UM AVAILABLE GAIN 13 dB a t f = 18 GHz
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JS8911-AS
Volta36
1DT725D
BST 063 133
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Untitled
Abstract: No abstract text available
Text: TOSHIBA MICROWAVE POWER GaAs FET TIM7785-8SL PRELIMINARY High Efficiency and Low Distortion Internally Matched Power GaAs FETs C-Band Features • Low intermodulation distortion - IM3 = -45 dBc at Po = 28.5 dBm, Single Carrier Level • High power - P1dB = 39.5 dBm at 7.7 GHz to 8.5 GHz
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TIM7785-8SL
TCH7250
TIM7785-8SL
MW51090196
TGT725D
DG227D4
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