2SK794
Abstract: C1B capacita
Text: TOSHIBA {DISCRETE/OPTO} 9097250 TO S H IB A tfo à itib a TT DE I t D T T S S O D IS C R E T E /O P T O 99D 16769 □ □ l t 7 b cl D T -3 9 ~ \3 SEMICONDUCTOR T OSHIBA FIELD EFFECT TRANSISTOR TECHNICAL DATA SILICON N CHANNEL MOS TYPE 2 S K 7 9 4 (7T-M0S)
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DT-39
-100nA
300/iA
VdS-900V)
2SK794
C1B capacita
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JS8819-AS
Abstract: T-1228
Text: JS8819-AS FEA TU R ES: • LOW N O ISE FIG U R E ■ 0.5 G ATE LEN G TH ■ CH IP FO R M 1.1dB at f = 8 G H z I . 6 dB at f = 12 G H z ■ HIG H ASSO C IA TED GAIN I I . 5 dB at f = 8 G H z 9.5 dB at f = 12 G H z ■ H IG H M AXIM UM AVAILABLE GAIN 15.5 dB at F = 8 G H z
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JS8819-AS
JS8819-AS
T-1228
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Untitled
Abstract: No abstract text available
Text: TOSHIBA Discrete Semiconductors 2SJ241 Field Effect Transistor Industrial Applications TQ-220FL Silicon P Channel MOS Type Unit in mm L2-tc-MOS IV High Speed, High Current DC-DC Converter, Relay Drive and Motor Drive Applications Features • 4-Volt Gate Drive
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2SJ241
TQ-220FL
20kii)
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Untitled
Abstract: No abstract text available
Text: TOSHIBA LED Lamp TLOE156P InGaAlP Orange Light Emission Unit in mm Panel Circuit Indicator 5 mm Diameter T1-3/4 • New Emission Material (InGaAlP) Orange LED • Peak Wavelength: X, p = 612 nm • All Plastic Mold Type • Colorless Clear Lens • Low Drive Current, High Intensity Orange Light Emission
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TLOE156P
TGT7250
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