Untitled
Abstract: No abstract text available
Text: ISSI IS93C66-3_ S 4,096-BIT SERIAL ELECTRICALLY ERASABLE PROM AUGUST 1995 FEATURES OVERVIEW • State-of-the-art architecture — Non-volatile data storage — Low voltage operation: 3.0V Vcc = 2.7V to 6.0V — Full TTL compatible inputs and outputs
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IS93C66-3_
096-BIT
EE81995C66
T004M0M
IS93C66-3
IS93C66-3P
IS93C66-3G
IS93C66-3GR
600-mil
IS93C66-3PI
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Untitled
Abstract: No abstract text available
Text: I S 2 2 C 0 1 0 _ ^ ISSI % ONE-TIME-PROGRAMMABLE VOICE PROM PRELIMINARY SEPTEMBER 1995 FEATURES • Voice content stored in 4 sections at: - 8 KHz sampling is 8 seconds - 6 KHz sampling is 10.5 seconds - 5 KHz sampling is 12.8 seconds • Can operate at 3K to 16-11 KHz sampling
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000D3S3
TGQ4404
VP1095C010
IS22C010
IS22C010N
300-mil
10D4MG4
QG0035S
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Untitled
Abstract: No abstract text available
Text: 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer
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IS42S16128
131072-word
16-bit
16-bit
1DD4404
DR005-OA
IS42S16128
DR005
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