Untitled
Abstract: No abstract text available
Text: Filename: tfr 586.doc Version 2.0 VI TELEFILTER 21.03.2005 Resonator specification TFR 586 1/5 Measurement condition Ambient temperature: Input power level: Terminating impedance: Input: Output: 25 °C dBm 50 50 Ω Ω Characteristics Remark: The minimum of the attenuation amin is defined as the insertion loss ae. The centre frequency fc is the measured frequency at 3 dB. The frequency shift of
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Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-03 Jan. 10 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters
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10H6004
5SYA1109-03
CH-5600
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gto switching test abb
Abstract: gto 2400 abb gto characteristic
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 900 16x103 1.8 0.9 2400 V A A V mΩ V Fast Recovery Diode 5SDF 07H4501 Doc. No. 5SYA1111-02 Oct. 06 • Patented free-floating silicon technology • Low switching losses • Optimized for use as large-area snubber diode in GTO
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07H4501
5SYA1111-02
CH-5600
gto switching test abb
gto 2400
abb gto characteristic
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abb gto characteristic
Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 6000 1100 18x103 1.5 0.6 3800 V A A V mΩ V Fast Recovery Diode 5SDF 10H6004 Doc. No. 5SYA1109-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in highvoltage GTO converters
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10H6004
5SYA1109-02
CH-5600
abb gto characteristic
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1200 25x103 1.3 0.48 2800 V A A V mΩ V Fast Recovery Diode 5SDF 13H4501 Doc. No. 5SYA1104-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO
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13H4501
5SYA1104-02
CH-5600
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Untitled
Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1400 25x103 1.2 0.32 2200 V A A V mΩ V Fast Recovery Diode 5SDF 14H4505 Doc. No. 5SYA1110-02 Oct. 06 • Patented free-floating silicon technology • Low on-state and switching losses • Optimized for use as freewheeling diode in GTO
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14H4505
5SYA1110-02
CH-5600
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A140
Abstract: B140 C140 VF140 VF25 5SDF kn 18
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1440 25x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4520 Doc. No. 5SYA1170-00 March 05 • Low temperature bonding technology • Industry standard housing • Cosmic radiation withstand rating
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10H4520
5SYA1170-00
CH-5600
A140
B140
C140
VF140
VF25
5SDF
kn 18
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5.5 kw abb
Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 810 24x103 2.42 1.1 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4502 PRELIMINARY Doc. No. 5SYA1115-03 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4502
5SYA1115-03
CH-5600
5.5 kw abb
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Fast Recovery Diodes
Abstract: 5SDF-20L4520
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 1950 38x103 1.70 0.80 2800 V A A V Fast Recovery Diode 5SDF 20L4520 m V Doc. No. 5SYA1184-02 Feb. 13 Industry standard housing Cosmic radiation withstand rating Optimized low switching losses Optimized for snubberless operation
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20L4520
5SYA1184-02
CH-5600
Fast Recovery Diodes
5SDF-20L4520
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5SDF28L4520
Abstract: 8106AS 28L4520 VF125 tfr 586 ABB rcl 5SDF 28L4520
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2750 40x103 1.35 0.38 2800 V A A V m V Fast Recovery Diode 5SDF 28L4520 Preliminary Doc. No. 5SYA1185-01 Dec. 11 • Industry standard housing Cosmic radiation withstand rating Optimized low on-state
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28L4520
5SYA1185-01
CH-5600
5SDF28L4520
8106AS
28L4520
VF125
tfr 586
ABB rcl
5SDF 28L4520
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A125
Abstract: B125 C125 D125 10H4503
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4503
5SYA1163-01
CH-5600
A125
B125
C125
D125
10H4503
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10H4503
Abstract: abb b25
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 4500 1100 20x103 1.75 0.88 2800 V A A V mΩ V Fast Recovery Diode 5SDF 10H4503 Doc. No. 5SYA1163-01 Nov. 04 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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10H4503
5SYA1163-01
CH-5600
10H4503
abb b25
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switching diode 3.381
Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 5500 175 3x103 3.35 7.2 3300 V A A V mΩ V Fast Recovery Diode 5SDF 02D6004 PRELIMINARY Doc. No. 5SYA1118-02 Okt. 02 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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02D6004
5SYA1118-02
CH-5600
switching diode 3.381
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abb gto characteristic
Abstract: No abstract text available
Text: VRRM IF AV M IFSM V(T0) rT VDClink = = = = = = 5500 585 18x103 4.5 1.3 3300 V A A V mΩ V Fast Recovery Diode 5SDF 08H6005 PRELIMINARY Doc. No. 5SYA1116-01 Oct. 06 • Patented free-floating technology • Industry standard housing • Cosmic radiation withstand rating
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08H6005
5SYA1116-01
CH-5600
abb gto characteristic
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Fast Recovery Diodes
Abstract: 5SDF28L4520
Text: VRRM IF AV M IFSM V(T0) rT VDC-link = = = = = = 4500 2620 48x103 1.10 0.47 2800 V A A V Fast Recovery Diode 5SDF 28L4520 m V Doc. No. 5SYA1185-02 Feb. 13 Industry standard housing Cosmic radiation withstand rating Optimized low on-state Optimized for snubberless operation
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28L4520
5SYA1185-02
320TO,
CH-5600
Fast Recovery Diodes
5SDF28L4520
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TFR 419
Abstract: No abstract text available
Text: 1N6638 1N6638U SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 604, REV. - HERMETIC ULTRAFAST RECTIFIER AXIAL LEAD and SURFACE MOUNT MELF DESCRIPTION: A 150 VOLT, 0.3 AMP, 4.5 NANOSECOND HERMETIC RECTIFIER. Note: To order this device with S-100 Screening, add a suffix S to the part number.
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1N6638
1N6638U
S-100
1N6638U
TFR 419
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C6642 TECHNICAL DATA DATA SHEET 1188, REV A SMALL SIGNAL / COMPUTER DIODE CHIP • DESCRIPTION: A 100 VOLT, 0.3 AMP, 4.0 NANOSECOND RECTIFIER DIE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED RATING SYMBOL
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1C6642
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1C6640
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C6640 TECHNICAL DATA DATA SHEET 4968, Rev- SMALL SIGNAL / COMPUTER DIODE CHIP • DESCRIPTION: A 75 VOLT, 0.3 AMP, 4.0 NANOSECOND RECTIFIER DIE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED RATING PEAK INVERSE VOLTAGE
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1C6640
1C6640
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IGCT thyristor ABB
Abstract: gct thyristor A125 B125 C125 HFBR-1528 HFBR-2528 MTA-156 high power igct abb IGCT thyristor current max
Text: VDRM ITGQM ITSM V T0 rT VDClink = = = = = = 4500 2200 17x103 1.8 0.533 2800 V A A V mΩ V Reverse Conducting Integrated Gate-Commutated Thyristor 5SHX 26L4510 Doc. No. 5SYA1230-02 May 04 • High snubberless turn off rating • Optimized for medium frequency (<1kHz) and
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26L4510
5SYA1230-02
CH-5600
IGCT thyristor ABB
gct thyristor
A125
B125
C125
HFBR-1528
HFBR-2528
MTA-156
high power igct abb
IGCT thyristor current max
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1c4148
Abstract: No abstract text available
Text: 1C4148 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 4229, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 C UNLESS OTHERWISE SPECIFIED RATING
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1C4148
1c4148
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1C4150AG
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C4150AG TECHNICAL DATA DASTASHEET 5098, REV - SMALL SIGNAL / SWITCHING SILICON DIODE CHIP • DESCRIPTION: A 75 VOLT, 0.2 AMP, 4.0 NANOSECOND RECTIFIER DIE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED
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1C4150AG
1C4150AG
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1c4148
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C4148 TECHNICAL DATA DATASHEET 4229, Rev- SMALL SIGNAL / SWITCHING DIODE DESCRIPTION: A 100 VOLT, 0.2 AMP, 5.0 NANOSECOND SMALL SIGNAL / SWITCHING DIODE ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED MAXIMUM RATINGS RATING
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1C4148
1c4148
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Untitled
Abstract: No abstract text available
Text: SENSITRON SEMICONDUCTOR 1C4150 TECHNICAL DATA DATA SHEET 4979, REV - SMALL SIGNAL / COMPUTER DIODE CHIP • DESCRIPTION: A 75 VOLT, 2.5 AMP, 4.0 NANOSECOND RECTIFIER DIE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25 °C UNLESS OTHERWISE SPECIFIED RATING PEAK INVERSE VOLTAGE
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1C4150
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SHDG1052
Abstract: SHDG1053 SHDG1054 SI591
Text: 12.10- Low VcE{sat j Improved SCSOAIGBT Devices: IGBT Characteristics: Continuous Collector Current lc @Tc=90°C Continuous Collector Current lc @ T c=25°C Volts Amps Amps Pulsed Collector Current Tc=25°C, 1 ms Amps 600 600 1000 20 30 25 40 50 50 80 100
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OCR Scan
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SHDG1052
SHDG1053
SHDG1054
O-254
O-258
l50/3ft1\RSr.
SI591
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