4000 N CRYSTAL
Abstract: clim Piezo Ceramic Microphones rmi4 MPSA92 datasheet phone dialer 2N5401 470R MPSA42 MPSA92
Text: Application and Adjustment Hints General U3761MB-TFN The U3761MB-TFN is suitable for low-voltage, low-end telephone applications. It consists of a dialer, a ringer and a speech circuit in a single IC. The following describes the available functions of the dialer, the ringer and the speech
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U3761MB-TFN
U3761MB-TFN
4000 N CRYSTAL
clim
Piezo Ceramic Microphones
rmi4
MPSA92 datasheet
phone dialer
2N5401
470R
MPSA42
MPSA92
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zenerdiode 1N4004
Abstract: CHARACTERISTICS ZenerDIODE 5.1v rmi4 5 volt piezo microphone switches 1WATT ZENERDIODE monoflop 2N5401 470R MPSA42 MPSA92
Text: U3761MB-SFN, -TFN Application and Adjustment Hints 10.00 1 Information contained in this paper is intended to provide a product description. Such description does not in any way constitute assured characteristics in the legal sense, nor do those design hints provide information regarding delivery
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U3761MB-SFN,
2N5401
PSA92
MPSA42
U3761MB-SFN
100nF
HT3810
zenerdiode 1N4004
CHARACTERISTICS ZenerDIODE 5.1v
rmi4
5 volt piezo microphone switches
1WATT ZENERDIODE
monoflop
2N5401
470R
MPSA42
MPSA92
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Untitled
Abstract: No abstract text available
Text: V I S H AY I N T E R T E C H N O L O G Y, I N C . OPTOELECTRONICS Optoelectronics - Emitters, Detectors, Optical Sensors Emitters, Detectors, Sensors Infrared Emitters, Photo Detectors, and Optical Sensors Infrared Emitters PIN Photo Diodes Phototransistors
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VCNL4010
VCNL4020
VCNL3020
VMN-SG2123-1404
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str W 6553
Abstract: DIODE DO k2 k2 78.P STR 6553 lcd power board schematic APS 252 SC-614-P sc sf battery fuse XNSF 37 transistor P614 SC-601 SC-604
Text: SC-6x Processor Family Programmer’s Manual Sensory SC-6x Library 2003 Sensory, Inc. P/N 80-0212-D Programmer’s Manual SC-6x Processor Family Contents Introduction to the SC-6x . 3
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80-0212-D
SC-614-P
SC-614
str W 6553
DIODE DO k2 k2 78.P
STR 6553
lcd power board schematic APS 252
SC-614-P
sc sf battery fuse
XNSF 37 transistor
P614
SC-601
SC-604
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TGA4509
Abstract: No abstract text available
Text: Product Data Sheet August 5, 2008 27 - 31 GHz 1W Power Amplifier TGA4509 Key Features • • • • • • • • 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI
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TGA4509
0007-inch
TGA4509
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TFN diode
Abstract: No abstract text available
Text: Advance Product Information May 19, 2004 27 - 31 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss
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TGA4509-EPU
0007-inch
TFN diode
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10KW
Abstract: TGA4509 TGA4509-EPU 50W 4 GHz linear power amplifier
Text: Advance Product Information January 23, 2003 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss
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TGA4509-EPU
0007-inch
10KW
TGA4509
TGA4509-EPU
50W 4 GHz linear power amplifier
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TGA1135B
Abstract: pin diode 23GHz
Text: Advance Product Information Feb 4, 2000 18-27.5 GHz 1W Power Amplifier TGA1135B Key Features • 0.25 um pHEMT Technology • 14 dB Nominal Gain at 23GHz • 30 dBm Nominal P1dB • 38dBm OTOI typical • Typical 15dB Input/Output RL • Bias 6 - 7V @ 540 mA
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TGA1135B
23GHz
38dBm
TGA1135B
V/540mA
0007-inch
pin diode 23GHz
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Untitled
Abstract: No abstract text available
Text: Advance Product Information December 18, 2002 27 - 32 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • Chip Dimensions 2.4 mm x 1.2 mm x 0.1 mm 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss
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TGA4509-EPU
0007-inch
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Untitled
Abstract: No abstract text available
Text: Advance Product Information Jan 17, 2005 27 - 31 GHz 1W Power Amplifier TGA4509-EPU Key Features • • • • • • • • 22 dB Nominal Gain @ 30 GHz 30 dBm Nominal Pout @ P1dB 25% PAE @ P1dB -10 dB Nominal Return Loss Built-in Power Detector 0.25-µm mmW pHEMT 3MI
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TGA4509-EPU
0007-inch
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IDC2X5M
Abstract: STR 6553 microcontroller 64pin sharp MSP50C605 MSP50C604 MSP50C601 IDC2X5 lm386 jrc MSP50P614 ZF 142 012
Text: MSP50C6xx Mixed-Signal Processor User’s Guide Mixed Signal Products SPSU014A Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest
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MSP50C6xx
SPSU014A
IDC2X5M
STR 6553
microcontroller 64pin sharp
MSP50C605
MSP50C604
MSP50C601
IDC2X5
lm386 jrc
MSP50P614
ZF 142 012
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IDC2X5M
Abstract: str W 6553 MSP50C601 MSP50C604 MSP50C605 MSP50C614 jrc 4151 CNC DRIVES 4193 jrc P614
Text: MSP50C6xx Mixed-Signal Processor User’s Guide Mixed Signal Products SPSU014A Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest
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MSP50C6xx
SPSU014A
IDC2X5M
str W 6553
MSP50C601
MSP50C604
MSP50C605
MSP50C614
jrc 4151
CNC DRIVES
4193 jrc
P614
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TGA1135B
Abstract: TGA1135B-SCC ka band power mmic
Text: Product Datasheet January 21, 2002 18-27 GHz 1W Power Amplifier TGA1135B-SCC Key Features • • • • • • • Primary Applications Chip Dimensions 2.641 mm x 1.480 mm • • • Product Description The TriQuint TGA1135B-SCC is a balanced twostage HPA MMIC design using TriQuint’s proven
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TGA1135B-SCC
TGA1135B-SCC
TGA11135B
TGA1135B
V/540mA
600um
0007-inch
ka band power mmic
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Untitled
Abstract: No abstract text available
Text: Product Data Sheet August 5, 2008 77 GHz Transceiver Switch TGS4307 Key Features • • • • • • • • I/O Compatible with MA4GC6772 3 Antenna Ports Receive, Source, and LO Ports 2.5 dB RX/TX Insertion Loss Typical 40 dB Source/Mixer Isolation Typical
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TGS4307
MA4GC6772
TGS4307
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ph 4148 zener diode detail
Abstract: ph 4148 zener diode IDC2X5M Zener Diode ph 4148 STR 6553 MOV NR zener PH 4148 MSP50C604 MSP50C605 MSP50C614
Text: MSP50C614 Mixed-Signal Processor User’s Guide SPSU014 January 2000 Printed on Recycled Paper IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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MSP50C614
SPSU014
MSP50C604
64-Pin
MSP50C605
ph 4148 zener diode detail
ph 4148 zener diode
IDC2X5M
Zener Diode ph 4148
STR 6553
MOV NR
zener PH 4148
MSP50C614
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Untitled
Abstract: No abstract text available
Text: -»wMtflggfcaA.«» sE r^ Y p tfn f.-^ a iir-r,- HARRIS SEMICOND SECTOR 37E D rr "irrriirT iaj-if! t , M302271 DGE7330 7 • HAS Optoelectronic Specifications_ T-m-ZS Photon Coupled Isolator MCA230, MCA231, MCA255 GaAs Infrared Emitting Diode & N’PN Silicon Darlington Connected Phototransistor
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M302271
DGE7330
MCA230,
MCA231,
MCA255
E51868
92CS-42662
92CS-429S1
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MMB2524
Abstract: No abstract text available
Text: f\ <z& C tFN FR A I S e m ic o n d u c to r % MMBZ5225 t h VU MMBZ5267 Zener Diodes Vz Range 3.0 to 75V Power Dissipation 300mW TO-236AB SOT-23 Top View Mounting Pad Layout 0.037 (0.95) 0.037 (0.95; 0.079 (2.0) 0.035 (0.9) t H h 0.031 (0.8) Dim ensions in inches and (millimeters)
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MMBZ5225
MMBZ5267
300mW
O-236AB
OT-23)
OT-23
E8/10K
MMB2524
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LUM2563MU302
Abstract: No abstract text available
Text: LU M-2563M U300 / LUM-2563MU301 / LUM-2563MU302 * f : t — ¥ / Light Emitting Diodes LUM-2563MU300 LUM-2563MU301 LUM-2563M U302 • L U M -2 5 63 M U V 'J - X U T 1 7 t y 16 X 16 K "j S V h V 0 T s D - y b 1 6 X 1 6 Dot Matrix Unit Dimensions Unit : mm)
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M-2563M
LUM-2563MU301
LUM-2563MU302
LUM-2563MU300
LUM-2563M
LUM-2563MU300
LUM2563MU302
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TSE 151
Abstract: No abstract text available
Text: ERC01 1.5A I Outline Drawings GENERAL USE RECTIFIER DIODE : Features • W ide voltage class • BG fSISii • I I tjv : Marking High reliability ■ E I& : Applications * 5-u - K : É Color code : White •« » ¿ ft / General purpose rectifier applications
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ERC01
Jlrt54]
l95t/R89
TSE 151
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Untitled
Abstract: No abstract text available
Text: E R E 7 5 3 a • : O utline D raw ings Units m m FAST RECOVERY DIODE : Features • Planer chip • V 7 b 'J J ]'V J — • T & 'yY lfc S oft recovery type Stud m ounted : Applications • S w itching pow er supplies • -J-a*y/<— j fc-OP • Free-wheel diode
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ERE75
eSTg30
I95t/R89)
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Lem LT 300 - t
Abstract: NDL5200 L5104
Text: N E C h2E D ELECTRONICS INC • b427525 0030074 22T M N E C E PRELIMINARY DATA SHEET NEC PHOTO DIODE NDL5103P, NDL5103P1 ELECTRON DEVICE 1 300 nm OPTICAL FIBER COM M UNICATIONS <t>50 G ERM AN IU M A V A LA N CH E PHOTO DIODE M O DULE DESCRIPTION NDL5103P and NDL5103P1 are Germanium Avalanche Photo Diodes with optical fiber, especially designed for detectors of
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b427525
NDL5103P,
NDL5103P1
NDL5103P
NDL5103P1
NDL5103P
NDL51Q3P1
NDL5100C
NDL5104P1
NDL5102
Lem LT 300 - t
NDL5200
L5104
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Untitled
Abstract: No abstract text available
Text: APT100GF60JRD A dvanced pow er T e c h n o lo g y 9 600V 140A Fast IGBT&FRED The Fast IGBT is a new generation of high voltage pow er IGBTs. Using NonPunch Through Technology the Fast IGBT™ combined with an APT free wheeling ultraFast Recovery Epitaxial Diode FRED offers superior
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APT100GF60JRD
20KHz
OT-227
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F7007N
Abstract: T151 1SV02 WFA 21
Text: Semiconductor Products r . N channel, Single 30V/7A I^ Jl Features Low-on resistance V g s = V driving 4 4 V G S= V IEÜJ J7 G - S f f i y x J - - ? ! * - K ftiS I Avalanche capability rating Higher pulse-current Including G-S zener diode Maximum ratings and characteristics
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1000mm
F7007N
T151
1SV02
WFA 21
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Untitled
Abstract: No abstract text available
Text: 6RI50E 50 a POWER DIODE MODULE : Features • <'>*<—'>3>?-'ym 7 Glass Passivation Chip • J È i l & A ' l i P Easy Connection • fê it Insulated Type : A p p lica tio n s • Inverters • /<-yT-U— Battery Chargers • f i i ï fi Æ— DC Motors
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6RI50E
50/60Hz
191X1
19S24-f-(
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