TCA780
Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Text: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP
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1N3245
1N3611GP
1N3612GP
1N3613GP
1N3614GP
1N3725
1N3957GP
1N4001GP
1N4002GP
1N4003GP
TCA780
TFK U 111 B
TFK U 4614 B
TFK S 186 P
TFK U 217 B
TFK BP w 41 n
TFK BPW 41 N
Tfk 880
TFK 148
TDSR 5150 G
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SGLA36AT0600
Abstract: SGHA36AT0600 GE TFK Breakers SELA36AT0100 SGHA36AT0400 TFK4 Cable GEH-5591 SKHA36AT1200 skla36at0800 sfla36at0250
Text: Molded Case Circuit Breakers Molded Case Circuit Breakers – Features .3-2 Spectra RMS Circuit Breakers with MicroVersaTrip Plus Trip Units – Features .3-3 Molded Case Circuit Breakers – Quick Reference Guide .3-4
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480/277V
SGLA36AT0600
SGHA36AT0600
GE TFK Breakers
SELA36AT0100
SGHA36AT0400
TFK4 Cable
GEH-5591
SKHA36AT1200
skla36at0800
sfla36at0250
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3 tfk 206
Abstract: tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor MCT62H tfk order
Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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MCT62H
MCT62H
3 tfk 206
tfk Phototransistor
TFK 201
DIN 50014 STANDARD
Vishay Telefunken tfk transistor
tfk order
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Untitled
Abstract: No abstract text available
Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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MCT62H
MCT62H
D-74025
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23 TFK 001
Abstract: No abstract text available
Text: MCT6H/ MCT62H Vishay Semiconductors Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.
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MCT62H
MCT62H
D-74025
23 TFK 001
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MCT62H
Abstract: E-76222 Vishay Telefunken tfk
Text: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using
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MCT62H
MCT62H
D-74025
E-76222
Vishay Telefunken tfk
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Untitled
Abstract: No abstract text available
Text: CNY74–2H/ CNY74–4H Vishay Semiconductors Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead
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CNY74
CNY74-2H
CNY74-4H
16-lead
D-74025
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CNY74
Abstract: CNY74-4H TFK 03 Diode DIN 50014 STANDARD tfk Phototransistor CNY74-2H
Text: CNY74–2H/ CNY74–4H Vishay Telefunken Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package.
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CNY74
CNY74-2H
CNY74-4H
16-lead
D-74025
TFK 03 Diode
DIN 50014 STANDARD
tfk Phototransistor
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Untitled
Abstract: No abstract text available
Text: CNY74–2H/ CNY74–4H Vishay Telefunken Multichannel Optocoupler with Phototransistor Output Description The CNY74-2H and CNY74-4H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in an 8-lead, resp. 16-lead plastic dual inline package.
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CNY74
CNY74-2H
CNY74-4H
16-lead
D-74025
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IN5363B
Abstract: IN5361B P6KEI5CA IN5956B TFK S 417 T IM200Z in5349b IN5384B in5366b P6KEI5A
Text: Cross Reference Every care has b een taken in compiling this cross referen ce list which is published in good faith to assist engineers, Readers are rem inded that this list is intended for guidance only FAGOR ELECTRÓNICA can not be held responsible for any
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03NH45
05NH46
05NU41
05NU42
0R8GU41
5KE10
5KE10Û
5KE100A
5KE100CA
5KE10CCF
IN5363B
IN5361B
P6KEI5CA
IN5956B
TFK S 417 T
IM200Z
in5349b
IN5384B
in5366b
P6KEI5A
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TFK 680 CNY 70
Abstract: 7447n BTP-128-400 ITT TCA 700 Y btp 128 550 74151n Katalog CEMI SFC2741DC 4BYP250-400 TFK 227
Text: NAUKOWO-PRODUKCYJNE CENTRUM PÒLPRZEWODNIKÓW CEMI ELEMENTY PÓtPRZEWODNIKOWE I UKtADY SCALONE USTA PREFERENCYJNA 1982/84 Warszawa 1982 WPROWADZENIE LISTA PREFEREMCYJNA zawiera wykaz podzespolów kowanych aktualnle, przewldzianych do produkcji w w ramach urnów specjallzacyjnych 1 kooperacyjnych.
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2N2222A 338
Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Text: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK
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2CY17
2CY18
2CY19
2CY20
2CY21
500MA
500MA
2N2222A 338
TFK 949
2N1167
halbleiter index transistor
ad161
BSY19
al103
ac128
TFK 404
Tfk 931
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TFK BC
Abstract: TFK 110 TFK 309 TFK 727 tfk 4 309 tfk 238 BC109 tfk bc108 BC107 TFK 330
Text: BC 107 • B C 1 0 8 - B C 109 BC 237 • BC 238 • BC 239 'W Silizium-NPN-Epitaxial -Planar NF-Transistoren Silicon NPN Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen A p p lic a tio n s : AF pre and driver stages Features: Besondere Merkmale:
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BC108
BC109
TFK BC
TFK 110
TFK 309
TFK 727
tfk 4 309
tfk 238
BC109
tfk bc108
BC107
TFK 330
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fr 309
Abstract: BC307 BC177 BC179 BC 179 BC308 BC 307 bc 308 BC309 tfk 731
Text: BC 177 • BC 178 • BC179 BC 307 - BC 308 • BC 309 Silizium-PNP-Epitaxial-Planar-NF-Transistoren Silicon PNP Epitaxial Planar AF Transistors Anwendungen: NF-Vor- und Treiberstufen Applications: AF pre and d river stages Besondere Merkmale: Features: • BC 179, BC 309 fü r rauscharm e Vorstufen
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BC179
fr 309
BC307
BC177
BC179
BC 179
BC308
BC 307
bc 308
BC309
tfk 731
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MZMA
Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-20
DD25F-40
DD25F-60
DD25F-80
DD30GB-40
MZMA
DBF10E
DBF20B
DBF20G
DBF20TC
DBF20TE
DBF20TG
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PDF
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MZMA
Abstract: OC 170 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-20
DD25F-40
DD25F-60
DD25F-80
DD30GB-40
MZMA
OC 170
DBF10E
DBF20B
DBF20G
DBF20TC
DBF20TE
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transistor 2N4
Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Text: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION
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D950
Abstract: P100 0352002 P100-7
Text: T H IS DRAWING IS U N P U B L IS H E D . COPYRIGHT BY TYCO FOR RELEASED ALL ELECTRONICS CORPORATION. PU B LIC ATIO N RIGHTS n 6 7 4 5 3 2 - R E S ER V ED . REVISIONS LOG D IS T AD 00 LTR s 1,27 + 0.02 [ 0 5 0 + .001] TYP DATE DWN APVD 220C T2001 MB DS D E S C R IP T IO N
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31MAR2000
18SEP00
\ENGapps\TECworker\lobs\nsrv038a\1
D950
P100
0352002
P100-7
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MZMA
Abstract: DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-20
DD25F-40
DD25F-60
DD25F-80
DD30GB-40
MZMA
DBF10E
DBF20B
DBF20G
DBF20TC
DBF20TE
DBF20TG
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PDF
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EFT 373
Abstract: D25F10 DBF20E dbf40b DBF40TC DBC10G DBF10E DBF20B DBF20C DBF20G
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
DD25F-60
DD25F-80
DD30GB-40
DD30GB-80
DD30HB-120
EFT 373
D25F10
dbf40b
DBF40TC
DBF10E
DBF20B
DBF20G
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PDF
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RCA H 541
Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Text: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK
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MZMA
Abstract: DD25F EFT 308 STM-231 DBC10G DBF10E DBF20B DBF20C DBF20E DBF20G
Text: DBC10G DBF10B DBF10C DBF10E DBF10G DBF20B DBF20C DBF20E DBF20G DBF20TC DBF20TE DBF20TG DBF40B DBF40C DBF40E DBF40G DBF40TC DBF40TE DBF40TG DBF60B : nÉra âm i 1 n* DBF60C DBF60E DBF60G DBF60TC DBF60TE mmSSimm » , J m in im u m DBF60TG DCA25B DCA25C DCA25E
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DBC10G
DBF10E
DBF20B
DBF20C
DBF20E
23D30GB-40
DD30GB-80
DD30HB-120
DD30HB-160
DD40F-100
MZMA
DD25F
EFT 308
STM-231
DBF10E
DBF20B
DBF20G
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nE352
Abstract: VTE3121L T01B ME 1117 T018 VTE1012 VTE1112 VTE1211 VTE1211W VTE3121
Text: This Material L E D -1 B Copyrighted n ¿ '^ E G z tS HIGH POWER GaAs INFRARED EMITTING DIODES V A C T E C OPTOELECTRONICS 920 nm 10900 PAGE BLVD. ST. LOUIS. MO. 63132 USA TWX 910-764-0811 PHONE 314-423-4900 By P R O D U C T D ESCRIPTION: Its FE A T U R E S:
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10pps.
nE352
VTE3121L
T01B
ME 1117
T018
VTE1012
VTE1112
VTE1211
VTE1211W
VTE3121
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TFK 839
Abstract: TFK 609 TFK 834 AEG TFK TELEFUNKEN TFK 809 TFK 893 TFK 9730 tfk 944 TFK 505 am diode tfk 817
Text: Tem ic Sales Offices TELEFUNKEN Semiconductors Addresses Europe Denmark Hungary THMIC Dansk c/o AFXi Dansk Aktieselskab Roskildevej 8-10 2620 Albcrtslund Tel: 45 42 64 85 22 Fax: 45 43 62 62 28 TEMIC TELEFUNKEN microelectronic GmbH Kruppstrasse 6 45128 Essen
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