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Vishay Intertechnologies PTF5134K000FXEK Res Metal Film 34kOhm 1% ? 15ppm/?C 1/20W Axial Leaded Bulk - Bulk (Alt: PTF5134K000FXEK)
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Vishay Intertechnologies PTF51316R00FZR7 Res Metal Film 316Ohm 1% ? 5ppm/?C 1/20W Axial Leaded T/R - Tape and Reel (Alt: PTF51316R00FZR7)
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Avnet Americas	PTF51316R00FZR7	Reel		20 Weeks	1,500	1 - 10 - 100 - 1000 - 10000 $3.0996	Buy Now
Vishay Intertechnologies PTF5136K100FZEK Res Metal Film 36.1kOhm 1% ? 5ppm/?C 1/20W Axial Leaded Bulk - Bulk (Alt: PTF5136K100FZEK)
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Vishay Intertechnologies PTF5136K100FZBF Res Metal Film 36.1kOhm 1% ? 5ppm/?C 1/20W Axial Leaded Bulk - Bulk (Alt: PTF5136K100FZBF)
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Newark	PTF5136K100FZBF	Bulk			100	1 - 10 - 100 $12.04 1000 $9.67 10000 $8.99	Buy Now
Vishay Intertechnologies PTF5139K000AZR7 Res Metal Film 39kOhm 0.05% ? 5ppm/?C 1/20W Axial Leaded T/R - Tape and Reel (Alt: PTF5139K000AZR7)
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TF 513 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
2SC4890 Abstract: No abstract text available Text: Ordering number:EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).	Original	EN4137 2SC4890 100ns 2039D 2SC4890] 2SC4890	PDF
2SC4890 Abstract: No abstract text available Text: Ordering number:EN4137 NPN Triple Diffused Planar Silicon Transistor 2SC4890 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).	Original	EN4137 2SC4890 100ns 2039D 2SC4890] 2SC4890	PDF
2SC4891 Abstract: EN4138 Text: Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).	Original	EN4138 2SC4891 100ns 2039D 2SC4891] 2SC4891 EN4138	PDF
2SC4891 Abstract: EN4138 c 4138 Text: Ordering number:EN4138 NPN Triple Diffused Planar Silicon Transistor 2SC4891 Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features Package Dimensions • High speed tf=100ns typ . · High reliability (Adoption of HVP process).	Original	EN4138 2SC4891 100ns 2039D 2SC4891] 2SC4891 EN4138 c 4138	PDF
74HC1GU04 Abstract: 74HC1GU04GW 74HCU04 HC1GU04 Text: INTEGRATED CIRCUITS DATA SHEET 74HC1GU04 Inverter Product specification File under Integrated Circuits, IC06 1998 Nov 18 Philips Semiconductors Product specification Inverter 74HC1GU04 FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf = 6.0 ns.	Original	74HC1GU04 SCA60 245106/00/01/pp16 74HC1GU04 74HC1GU04GW 74HCU04 HC1GU04	PDF
74AHC1GU04 Abstract: 74AHC1GU04GW Text: INTEGRATED CIRCUITS DATA SHEET 74AHC1GU04 Inverter Product specification File under Integrated Circuits, IC06 1999 May 19 Philips Semiconductors Product specification Inverter 74AHC1GU04 FEATURES • Symmetrical output impedance QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 3.0 ns.	Original	74AHC1GU04 EIA/JESD22-A114-A EIA/JESD22-A115-A 245002/00/01/pp16 74AHC1GU04 74AHC1GU04GW	PDF
74HC1G32 Abstract: 74HC1G32GW 74HCT1G32 74HCT1G32GW SC88A Text: INTEGRATED CIRCUITS 74HC1G32 74HCT1G32 2-input OR gate Product specification File under Integrated Circuits, IC06 1997 Dec 16 Philips Semiconductors Product specification 74HC1G32 74HCT1G32 2-input OR gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns	Original	74HC1G32 74HCT1G32 SCA55 budgetnum/printrun/ed/pp12 74HC1G32 74HC1G32GW 74HCT1G32 74HCT1G32GW SC88A	PDF
NAND 74 SOT353 Abstract: 74HC1G00 74HC1G00GW 74HCT1G00 74HCT1G00GW cmos 8 input nand gate 7430 Text: INTEGRATED CIRCUITS DATA SHEET 74HC1G00; 74HCT1G00 2-input NAND gate Product specification File under Integrated Circuits, IC06 1998 Jul 30 Philips Semiconductors Product specification 74HC1G00; 74HCT1G00 2-input NAND gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns	Original	74HC1G00; 74HCT1G00 74HC1G/HCT1G00 SCA60 245106/00/01/pp12 NAND 74 SOT353 74HC1G00 74HC1G00GW 74HCT1G00 74HCT1G00GW cmos 8 input nand gate 7430	PDF
hc1g08 Abstract: 74HC1G04 74HCT1G04 74HC1G08 74HC1G08GW 74HCT1G08 74HCT1G08GW 74hct1g Text: INTEGRATED CIRCUITS DATA SHEET 74HC1G08; 74HCT1G08 2-input AND gate Product specification File under Integrated Circuits, IC06 1998 Nov 10 Philips Semiconductors Product specification 74HC1G08; 74HCT1G08 2-input AND gate FEATURES QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.	Original	74HC1G08; 74HCT1G08 SCA60 245106/00/01/pp12 hc1g08 74HC1G04 74HCT1G04 74HC1G08 74HC1G08GW 74HCT1G08 74HCT1G08GW 74hct1g	PDF
74HC-HCT02 Abstract: 74HC1G02 74HC1G02GW 74HCT1G02 74HCT1G02GW diode marking code 777 HCT1G02 Text: INTEGRATED CIRCUITS DATA SHEET 74HC1G02; 74HCT1G02 2-input NOR gate Product specification File under Integrated Circuits, IC06 1998 Aug 31 Philips Semiconductors Product specification 2-input NOR gate FEATURES 74HC1G02; 74HCT1G02 QUICK REFERENCE DATA GND = 0 V; Tamb = 25 °C; tr = tf ≤ 6.0 ns.	Original	74HC1G02; 74HCT1G02 SCA60 245106/00/01/pp12 74HC-HCT02 74HC1G02 74HC1G02GW 74HCT1G02 74HCT1G02GW diode marking code 777 HCT1G02	PDF
Untitled Abstract: No abstract text available Text: I METAL FILM FLAT CHIP RESISTORS JIS C 5222-1989*&&,p, q-~~ % RN73 RN73 RN73 Tf g I TYPE ~ 2A 26 2E ’ & DlMENSlONS m m WkO.2 LkO.2 2.0 1.25 1.6 2.5 3.2 - ’ c 0.4 + 0.2 I ’ d IfI “0: 0.3 0.5 LO.3 0.4 tf0.1 . 0.5 0.6 : l‘.C.Ii. +!!SSMt f% %!	Original	51-150k lo-150k lo-360k IO-360k 560k-111 lo-510k 51-2401i lo-240k 51-13Oli	PDF
NEC D 809 F Abstract: NEC D 809 L transistor NEC D 986 E7138 Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm	OCR Scan	NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138	PDF
Untitled Abstract: No abstract text available Text: m IGBT 2230 7^ 2 OOOS'H? 513 • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device Volts VcE sat V ge = 15V Switching Time (Max.) lc Rc R th RTH VF W Cont. PerIGBT Max. lc ton toff tf IGBT Diode Max. Max. Amps Watts Volts Amps usee. usee. usee.	OCR Scan	I50F-060 I75F-060 2MBI100F-060 2MBI50L-060 2MBI75L-060 2MBI100L-060 2MBI150L-060 2MBI150LB-060 2MBI200L-060 2MBI200LB-060	PDF
Untitled Abstract: No abstract text available Text: AN5137K AN5137K * 7 - t U trWft'i'WffliftiiM, PLLfcifc, AGC, AFC, SIFH1H Color TV Video IF Amplifier, PLL Detector, AGC, AFC, SIF Circuit • tt « AN 5137 K Ii , Unit: mm f] =7 - TV COB*\% 43\|B]JgJ £ j; V %p tf ^ Jfj jj. g ffl catti #i ;CATvuwter-5 h x i,	OCR Scan	AN5137K 28-Lead 5135N /5138N AN5136K, AN5137KiOttlii* AN5135NK/ 5138NK	PDF

2mb1200 Abstract: 2mb1200lb-060 2MBI100F-060 M-219 m219 1MBI300F-060 2MBI150F-060 2mbi200f 2MBI300F-060 2MBI50F-060 Text: m 2 E 3 & 7 oooa'ì'ì? 513 IGBT • 600 VOLT, F-SERIES MODULES • Low saturation voltage Device VCES Pc VcE sat R th RTH VF W Per IGBT Max. lc ton toff tf IGBT Diòde Max. Max. Am ps W atts V olts Am ps jjse c. usee. usee. °C/W °C/W Volts usee. 600 600	OCR Scan	2MBI50F-060 2MBI75F-060 2MBI100F-060 2MBI150F-060 2MBI200F-060 2MBI300F-060 2MB1200LB-060 2MBI300L-060 2MBI300LB-060 2MBI400L-060 2mb1200 M-219 m219 1MBI300F-060 2mbi200f	PDF
d0117 Abstract: No abstract text available Text: 5134300 K E N N E D Y CM S C OR P K E N N E D Y -CM S} CORP 93D 00114 D T-'tf-'ûS'10 D eT J S 1 3 4 3 D D 0 G □ □ 114 4 High Frequency, High Slew Rate Product Specifications and Price information Hybrid Amplifiers Models 750, 760, 770, 780 Features:	OCR Scan	125mA 513M30D d0117	PDF
Untitled Abstract: No abstract text available Text: I Ordering number: EN4138 f 2SC4891 N PN T riple Diffused P la n a r Silicon T ra n sisto r Ultrahigh-Defmition CRT Display Horizontal Deflection Output Applications F e a tu r e s • H igh Speed tf= 100ns typ . • H igh reliability (Adoption of HVP process).	OCR Scan	EN4138 2SC4891 100ns T03PM 5132MH	PDF
TSP50C42 Abstract: tsp50c4x TSP50C TSP50C41 Text: TSP50C4X Family Speech Synthesizers Design Manual Tf v a «; In s t r u m e n t s 0 ^ 1 7 2 4 Da'll?!! m • IM PO RTANT NOTICE Texas Instruments Tl reserves the right to make changes to or to discontinue any semiconductor product or service identified in this	OCR Scan	TSP50C4X BRN09 BRN10 TSP50C42 TSP50C TSP50C41	PDF
Untitled Abstract: No abstract text available Text: Ordering num ber: E N 4137 2SC4890 No.4137 N PN Triple Diffused P la n a r Silicon T ran sisto r , Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications , F e a tu r e s • H igh Speed tf= 100ns typ . - H igh reliability (Adoption of H V P process).	OCR Scan	2SC4890 100ns 00S03fl	PDF
51374-3028 Abstract: SD-51374-027 Text: 10 ä is NOTES: 2. MATERIAL ; v > : ; : ^ 7 : l c p G S B tf\|j y ’- : K e a u l 94v -o HOUSINGsLCPiLIQUID CRYSTAL POLYMER ,GLASS FILLED,WHITE,UL94V-0 7 ? 3 1n l - 5 ' : P P S, UL94V-0 ACTUATOR:PPS POLYPHENYLENE SULFIDE),GLASS FILLED,BROWN,UL94V-0 ( t = 0. 1 5)	OCR Scan	UL94V-O UL94V-0 703-1JL-9 UL94V-0 SD-51374-027 EN-02JA1021) 51374-3028 SD-51374-027	PDF
mosfet 5130 Abstract: CA5130M Text: CA5130, CA5130A Í D SHARRIS U U E M t c tf l D U C T O R 15MHz, BiMOS Microprocessor Operational Amplifiers with MOSFET Input/CMOS Output November 1996 Features Description • MOSFET Input Stage CA5130A and CA5130 are integrated circuit operational am plifiers that combine the advantage of both CMOS and	OCR Scan	CA5130, CA5130A 15MHz, CA5130A CA5130 CA5130AE CA5130AT CA5130E CA5130M mosfet 5130 CA5130M	PDF
Untitled Abstract: No abstract text available Text: * SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 3/4/5/7ns max. tA c : 2ns max. ■ Write pulse width, tww: 3ns min. ■ Edge rate, tr/tf: 500ps typ.	OCR Scan	SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 500ps -300mA, -220mA 10K/100K	PDF
Untitled Abstract: No abstract text available Text: * SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • Address access time, DESCRIPTION tAA: ■ Chip select access time, 3/4/5/7ns max. tA c : 2ns max. ■ Write pulse width, tww: 3ns min. ■ Edge rate, tr/tf: 500ps typ.	OCR Scan	SY10474-3/4/5/7 SY100474-3/4/5/7 SY101474-3/4/5/7 500ps -300mA, -220mA 10K/100K 24-pin 28-pin SY10/100/101474-3	PDF
transistor c 4137 Abstract: 16AF a006 2SC4890 le1110A BU510 Text: Ordering number: E N 4 1 3 7 N°-4i37. II 2SC4890 N P N T riple Diffused P la n a r Silicon T ra n s isto r Very High-Defmition CRT Display Horizontal Deflection Output Applications F e a tu re s • H ig h Speed tf= 100ns typ . •H igh re lia b ility (A doption of H V P process).	OCR Scan	EN4137 2SC4890 100ns transistor c 4137 16AF a006 2SC4890 le1110A BU510	PDF

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Vishay Intertechnologies PTF5134K000FXEK

Vishay Intertechnologies PTF51316R00FZR7

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Vishay Intertechnologies PTF5139K000AZR7

TF 513 Datasheets Context Search

2SC4890

2SC4890

2SC4891

2SC4891

74HC1GU04

74AHC1GU04

74HC1G32

NAND 74 SOT353

hc1g08

74HC-HCT02

Untitled

NEC D 809 F

Untitled

Untitled

2mb1200

d0117

Untitled

TSP50C42

Untitled

51374-3028

mosfet 5130

Untitled

Untitled

transistor c 4137