tf 216 10a 250v
Abstract: W01-01H 10Amp 250V Thermal CUTOFF K10B-142 thermal cutoff fuse 5050 ir led tf 77 10a 250v thermal-cutoff K10B-103
Text: Type K10B Thermal Cutoff Temperature rated Fuse 10Amp Axial Leaded www.optifuse.com (619) 593-5050 Ratings: Ampere Rating: 10A Axial Leaded Voltage Rating: 250V AC Agency Standards and Listings: Part Number K10B-077 K10B-087 K10B-094 K10B-099 K10B-103 K10B-113
|
Original
|
10Amp
K10B-077
K10B-087
K10B-094
K10B-099
K10B-103
K10B-113
K10B-116
K10B-121
K10B-128
tf 216 10a 250v
W01-01H
10Amp 250V
Thermal CUTOFF
K10B-142
thermal cutoff fuse
5050 ir led
tf 77 10a 250v
thermal-cutoff
K10B-103
|
PDF
|
usw-1
Abstract: thermal cutoff fuse USW-104T USW-122T USW-110T f 161 USW-139T USW-102T USW-109T USW-108T
Text: Thermal cutoff fuse. USW-1 U.S. Electronics Inc Thermal Cutoff Fuses Ph: 314 423 7550 USW-1 SERIES Fax: (314) 423 0585 TEMPERATURE Part No. Tf Cutoff Temperature Th USW-102T 72°C(161.6°F) 70°C+2°C-2°C 47°C(116.6°F) USW-105T 77°C(170.6°F) 76°C+0°C-4°C
|
Original
|
USW-102T
USW-105T
USW-109T*
USW-104T
USW-108T*
USW-110T*
USW-111T
USW-115T
USW-129T
10tion
usw-1
thermal cutoff fuse
USW-104T
USW-122T
USW-110T
f 161
USW-139T
USW-102T
USW-109T
USW-108T
|
PDF
|
darlington NPN 600V 8a transistor
Abstract: npn darlington 400v 10a npn darlington 6A 400V TO218 20A Darlington NTE256 22a ic NPN Transistor 600V npn darlington 400v 1.*a darlington NPN 600V
Text: NTE256 Silicon NPN Transistor Darlington w/Damper Diode Description: The NTE256 is a silicon epitaxial planer NPN Darlington transistor in a TO218 type package with an integrated Base–Emitter speed–up diode. This device is particularly suitable for use as an output
|
Original
|
NTE256
NTE256
darlington NPN 600V 8a transistor
npn darlington 400v 10a
npn darlington 6A 400V
TO218 20A Darlington
22a ic
NPN Transistor 600V
npn darlington 400v 1.*a
darlington NPN 600V
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
|
Original
|
4167A
O-257AA)
IRFY11N50CMA
O-257AA
|
PDF
|
Untitled
Abstract: No abstract text available
Text: PD - 94167 HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.53Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance
|
Original
|
O-257AA)
IRFY11N50CMA
O-257AA
|
PDF
|
DM t 96 10a 250v
Abstract: IRFY11N50CMA 4.5V TO 100V INPUT REGULATOR
Text: PD - 94167A HEXFET POWER MOSFET THRU-HOLE TO-257AA IRFY11N50CMA 500V, N-CHANNEL Product Summary Part Number BVDSS IRFY11N50CMA 500V RDS(on) 0.56Ω ID 10A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing
|
Original
|
4167A
O-257AA)
IRFY11N50CMA
O-257AA
DM t 96 10a 250v
IRFY11N50CMA
4.5V TO 100V INPUT REGULATOR
|
PDF
|
Thermal Cutoff Fuses
Abstract: tf 115 250v 2a thermal fuse 115 250V 2A thermal fuse 5A 250VAC 150C thermal-cutoff thermal fuse 115 thermal cutoff fuse tf 115 250v 15a USW-110T Thermal Cutoffs
Text: Thermal cutoffs Thermal Cutoff Fuses U.S. Electronics Inc Ph: 314 423 7550 USW SERIES Fax: (314) 423 0585 PRODUCTS USW -1 Series USW-2 Series OVERVIEW The thermal cutoffs (TCO) are non resetting, thermally sensitive, single pole, normally closed devices and
|
Original
|
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss
|
Original
|
AOTF10N50FD
AOTF10N50FD
AOTF10N50FDL
O-220F
|
PDF
|
Untitled
Abstract: No abstract text available
Text: AOTF10N50FD 500V, 10A N-Channel MOSFET with Fast Recovery Diode General Description Product Summary The AOTF10N50FD has been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS on , Ciss
|
Original
|
AOTF10N50FD
AOTF10N50FD
AOTF10N50FDL
O-220F
|
PDF
|
IXTT20P50P
Abstract: No abstract text available
Text: Preliminary Technical Information PolarPTM Power MOSFET IXTH20P50P IXTT20P50P VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated - 500V - 20A Ω 450mΩ TO-247 (IXTH) G Symbol Test Conditions VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
IXTH20P50P
IXTT20P50P
O-247
100ms
20P50P
IXTT20P50P
|
PDF
|
IXTH20P50P
Abstract: IXTT20P50P IXTH20P50 20P50P ixtt 20P50P 20P50 250V 10A TF 106 ixth 20p50p
Text: IXTH20P50P IXTT20P50P PolarPTM Power MOSFET VDSS ID25 = = ≤ RDS on - 500V - 20A Ω 450mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
IXTH20P50P
IXTT20P50P
O-247
100ms
20P50P
IXTH20P50P
IXTT20P50P
IXTH20P50
ixtt 20P50P
20P50
250V 10A TF 106
ixth 20p50p
|
PDF
|
IXTH20P50P
Abstract: No abstract text available
Text: PolarPTM Power MOSFET VDSS ID25 IXTH20P50P IXTT20P50P = = ≤ RDS on - 500V - 20A Ω 450mΩ P-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
IXTH20P50P
IXTT20P50P
O-247
100ms
20P50P
IXTH20P50P
|
PDF
|
Untitled
Abstract: No abstract text available
Text: IXTT20P50P IXTH20P50P PolarPTM Power MOSFETs VDSS ID25 RDS on P-Channel Enhancement Mode Avalanche Rated = = ≤ - 500V - 20A Ω 450mΩ TO-268 (IXTT) G S D (Tab) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
IXTT20P50P
IXTH20P50P
O-268
100ms
20P50P
|
PDF
|
IXTT20N50D
Abstract: IXTH20N50D 20n50 20N50D siemens relay rg
Text: IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 = = ≤ RDS on N-Channel, Depletion Mode 500V 20A Ω 330mΩ TO-268 (IXTT) G D (TAB) Symbol Test Conditions VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ 500 V VGSX Continuous ±30
|
Original
|
IXTH20N50D
IXTT20N50D
O-268
O-247)
O-247
100ms
IXTT20N50D
IXTH20N50D
20n50
20N50D
siemens relay rg
|
PDF
|
|
|
DF184S
Abstract: DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S
Text: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts
|
Original
|
E117626
JET2926-32001-1001-1009
HH05009-2004A-2019A
2010/Nov
DF184S
DF128S
SDF DF141S
DF170S
tf 216 10a 250v
DF240S
E117626
DF141S
DF66S
DF216S
|
PDF
|
DF216S
Abstract: DF98S DF280S
Text: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts
|
Original
|
E117626
JET2926-32001-1001-1009
HH05009-2004A-2019A
2013/Feb
DF216S
DF98S
DF280S
|
PDF
|
3551S
Abstract: No abstract text available
Text: Preliminary Technical Information IXTH20N50D IXTT20N50D High Voltage MOSFET VDSX ID25 N-Channel, Depletion Mode = = ≤ RDS on 500V 20A 330mΩ Ω TO-268 G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 500 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
IXTH20N50D
IXTT20N50D
O-268
O-247
O-268
O-247)
Condit00
3551S
|
PDF
|
IXFP20N50P3
Abstract: No abstract text available
Text: Preliminary Technical Information IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 Polar3TM HiperFETTM Power MOSFETs N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier VDSS ID25 = 500V = 20A 300m RDS on TO-220AB (IXFP) TO-263 AA (IXFA)
|
Original
|
IXFA20N50P3
IXFP20N50P3
IXFQ20N50P3
IXFH20N50P3
O-220AB
O-263
O-247
O-220
IXFP20N50P3
|
PDF
|
20n50p
Abstract: No abstract text available
Text: Advance Technical Information Polar3TM HiperFETTM Power MOSFETs VDSS ID25 IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 = 500V = 20A Ω ≤ 300mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) TO-220AB (IXFP)
|
Original
|
IXFA20N50P3
IXFP20N50P3
IXFQ20N50P3
IXFH20N50P3
O-263
O-220AB
VDSS70
O-247
O-220
20n50p
|
PDF
|
GXAP02
Abstract: Therm-O-Disc Thermodisc GXAM04 microtemp
Text: MICROTEMP Thermal Cutoffs: TYPES & SPECIFICATIONS MICROTEMP® thermal cutoffs are available in a range of temperatures and electrical ratings to meet application requirements see figure 3 . There are 5 primary types of thermal cutoffs available. Standard dimensions of each TCO series are shown in figure 4.
|
Original
|
250VAC
120VAC)
G4A00192C.
GXAP02
Therm-O-Disc
Thermodisc
GXAM04
microtemp
|
PDF
|
IXFH20N50
Abstract: IXFH20N50P3 20n50p 20N50P3 IXFA20N50P3
Text: Advance Technical Information IXFA20N50P3 IXFP20N50P3 IXFQ20N50P3 IXFH20N50P3 Polar3TM HiperFETTM Power MOSFETs VDSS ID25 = 500V = 20A Ω ≤ 300mΩ RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-263 AA (IXFA) TO-220AB (IXFP)
|
Original
|
O-263
IXFA20N50P3
IXFP20N50P3
IXFQ20N50P3
IXFH20N50P3
O-220AB
O-247
O-220
IXFH20N50
IXFH20N50P3
20n50p
20N50P3
|
PDF
|
tf 216 10a 250v
Abstract: DYE*TCO DF184S ISO 8015 tolerance DYE DF84S ISO 8015 tf 115 250v 15a DF240S 250V 10A TF 106 thermoresistor
Text: RoHS Highly Reliable Safety Device THERMAL LINKS DONG-YANG ELECTRONICS CO., LTD. The ultimate one-shot temperature safety device. Thermal links are designed to provide upper limit temperature protection of all electric and electronic products, keeping the products functioning properly
|
Original
|
TJ142D
TJ152D
TJ78D
TJ99D
tf 216 10a 250v
DYE*TCO
DF184S
ISO 8015 tolerance
DYE DF84S
ISO 8015
tf 115 250v 15a
DF240S
250V 10A TF 106
thermoresistor
|
PDF
|
10P50P
Abstract: IXTP10P50P IXTH10P50P IXTA10P50P IXTQ10P50P IXTP10P50 IXTH10P50
Text: PolarPTM Power MOSFET IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS ID25 RDS(on) TO-220 (IXTP) G G D(TAB) D S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
IXTA10P50P
IXTH10P50P
IXTP10P50P
IXTQ10P50P
O-263
O-220
O-247
100ms
IXTA10P50P
10P50P
IXTP10P50P
IXTH10P50P
IXTQ10P50P
IXTP10P50
IXTH10P50
|
PDF
|
IXTH10P50
Abstract: No abstract text available
Text: PolarPTM Power MOSFET IXTA10P50P IXTH10P50P IXTP10P50P IXTQ10P50P P-Channel Enhancement Mode Avalanche Rated TO-263 IXTA G VDSS ID25 RDS(on) TO-220 (IXTP) G G D(TAB) D S Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C - 500 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
|
Original
|
IXTA10P50P
IXTH10P50P
IXTP10P50P
IXTQ10P50P
O-263
O-220
O-247
100ms
IXTA10P50P
IXTH10P50
|
PDF
|
