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    TF 164 Search Results

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    TF 164 Price and Stock

    STMicroelectronics 3STF1640

    TRANS NPN 40V 6A SOT89
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    DigiKey 3STF1640 Reel 7,500
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    • 10000 $0.10605
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    3STF1640 Digi-Reel 1
    • 1 $0.41
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    3STF1640 Cut Tape 1
    • 1 $0.41
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    Avnet Silica 3STF1640 17 Weeks 1
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    Micron Technology Inc MTFDKCC25T6TGJ-1BC1ZABYY

    Solid State Drives - SSD U.3 32TB SSD NC14N
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Mouser Electronics MTFDKCC25T6TGJ-1BC1ZABYY 17
    • 1 $6593.75
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    Amphenol Corporation HCTF16164

    Terminals SOCKET 16# SIZE (POWER)
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    Mouser Electronics HCTF16164 1,345
    • 1 $0.64
    • 10 $0.5
    • 100 $0.439
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    C&K TFCDH8ST1640C

    Basic / Snap Action Switches Snap
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    Mouser Electronics TFCDH8ST1640C 76
    • 1 $11.69
    • 10 $10.91
    • 100 $6.22
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    C&K TFCFF5ST1640C

    Limit Switches
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    Mouser Electronics TFCFF5ST1640C
    • 1 $4.61
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    • 100 $3.5
    • 1000 $2.94
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    TF 164 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    15268

    Abstract: AM150MX-TF
    Text: AM150MX-TF September 2002 Rev. 3 DESCRIPTION AMCOM’s AM150MX-TF is a part of the TF series of GaAs MESFETs. This part has a total gate width of 15.0mm. The AM150MX-TF is designed for high power microwave applications, operating up to 6 GHz. The TF series is in a drop-in mounting style. The bottom of the


    Original     		PDF AM150MX-TF AM150MX-TF 36dBm 15268

    168 523.24

    Abstract: AM144MX-TF 4-9094
    Text: Plastic Packaged GaAs Power FET AM144MX-TF DATASHEET V. 1, November, 1999 DESCRIPTION AMCOM's AM144MX-TF is part of the TF Series of GaAs MESFETs. This part has a total gate width of 14.4 mm. The AM144MX-TF is designed for high power microwave applications, operating up to 8 GHz.


    Original     		PDF AM144MX-TF 168 523.24 4-9094

    sefuse d6x

    Abstract: SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E
    Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*conform since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are


    Original     		PDF AC250V SF70E SF76E SF91E SF96E SF113E SF119E 50Ohm DC32V sefuse d6x SEFUSE d6y SEFUSE SEFUSE SF214E SEFUSE SF240E SEFUSE SF129E SFH162E SFH124E SF 127c SFH109E

    SEFUSE SF240E

    Abstract: SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x
    Text: Limitor GmbH NEC/Schott SEFUSE thermal cutoffs Components for temperature, current & time SF/E series SF/K series RoHS*compliant since april 2003 SF/E series measures 4.2mm in body diameter and is VDE approved 10A + 15A at AC250V part no. Tf / TF Thermal cutoffs are


    Original     		PDF AC250V SF70E SF76E SF91E SF96E SF113E SF119E 50Ohm DC32V SEFUSE SF240E SEFUSE SF214E sefuse d6x SEFUSE d6y SM125A0 SF240E SF113E SEFUSE SF129E SF214E nec d6x

    1838 t

    Abstract: 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485
    Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf


    Original     		PDF IRGPH50MD2 C-481 1838 t 1838t IR 1838 T IR 1838 T datasheet D-10 IRGPH50MD2 c485

    D-10

    Abstract: IRGPH50MD2 1838t
    Text: IRGPH50MD2 90% Vge +Vge Same type device as D.U.T. Vce Ic 430µF 80% of Vce 90% Ic 10% Vce Ic D.U.T. 5% Ic td off tf Eoff = ∫ t1+5µS Vce ic dt t1 Fig. 18a - Test Circuit for Measurement of ILM, Eon, Eoff(diode) , trr, Qrr, Irr, td(on) , tr, td(off) , tf


    Original     		PDF IRGPH50MD2 C-481 D-10 IRGPH50MD2 1838t

    FS0606

    Abstract: FS4W1010
    Text: RADIAL LEADED SHIELDED INDUCTORS FS0606/0807/1008/1010/1012/1014/1215/1618 TYPE Shape and size : Dimensions are in mm Features : Ordering information : ．Vertical structure, small, lightweight design. FS 1012 - 223 K - TF ．No inductive interference.


    Original     		PDF FS0606/0807/1008/1010/1012/1014/1215/1618 FS0606/ FS1012/ FSB1014 FS0606 FS0807 FS100 FS4W1010

    Untitled

    Abstract: No abstract text available
    Text: RADIAL LEADED SHIELDED INDUCTORS FS0606/0807/1008/1010/1012/1014/1215/1618 TYPE Shape and size : Dimensions are in mm Features : Ordering information : ．Vertical structure, small, lightweight design. FS 1012 - 223 K - TF ．No inductive interference.


    Original     		PDF FS0606/0807/1008/1010/1012/1014/1215/1618 FS0606/ FS1012/ FSB1014 FS0606 FS0807 FS100

    AO211

    Abstract: STD130 SAMSUNG 834
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.155ns, one fanout (SL = 0.00517pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2 ad2b ad2bd2 ad2bd4


    Original     		PDF 155ns, 00517pF, 048pF, 048pF ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 AO211 STD130 SAMSUNG 834

    design dc link inverter

    Abstract: SK47
    Text: Reference Design for IPM Modules Evaluation Board for P95X-A40 TF IPM Modules with an Integrated PFC Controller roprietary data, company confidential. All rights reserved. Reference Design for IPM Modules RD_2015-03_001-v01 page 1 Table of Contents 1 Introduction . 4


    Original     		PDF P95X-A40 001-v01 CRCW06031K74FKEA CRCW0603147KFKEA CRCW06031K07FKEA CRCW060315K0FKEA CRCW060310K0FKEA MC0125W12061383K CRCW06034K70FKEA design dc link inverter SK47

    GCK 164

    Abstract: samsung 649 ao21 OA21D
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.204ns, one fanout (SL = 0.00486pF, wire load = 0.048pF, 0.048pF is correspondent with 300µm wire) Cell Name ad2_lp ad2b_lp ad2bd2_lp


    Original     		PDF 204ns, 00486pF, 048pF, 048pF ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 GCK 164 samsung 649 ao21 OA21D

    AO222

    Abstract: ND3B FD2D2 FD3D2 STD150 FD2Q OA221 Samsung 546 NID4 FD4D2
    Text: Appendix Maximum Fanouts C Appendix C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.112ns, one fanout (SL = 0.00305pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2


    Original     		PDF 112ns, 00305pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 AO222 ND3B FD2D2 FD3D2 STD150 FD2Q OA221 Samsung 546 NID4 FD4D2

    hd66840fs

    Abstract: HD61830A00H HD66841FS 120-channel HD61100 lcd 2 by 16 HD66204F/FLVTF/TFL hd61830B00 LCD 80 segment driver "LCD timing controller"
    Text: Type Number Order Sorted by Type Name Type HD44100RFS HD44102CH HD44103CH HD44105H HD44780UA00FS/00TF/01FS/ 02FS/UB*FS/UB*TF LCD-II HD61100A HD61102RH HD61103A HD61200 HD61202/TFIA HD61203/TFIA HD61602R/RH HD61603R HD61604R HD61605R HD61830A00H LCDC HD61830B00H LCDC


    Original     		PDF HD44100RFS HD44102CH HD44103CH HD44105H HD44780UA00FS/00TF/01FS/ 02FS/UB* HD61100A HD61102RH HD61103A HD61200 hd66840fs HD61830A00H HD66841FS 120-channel HD61100 lcd 2 by 16 HD66204F/FLVTF/TFL hd61830B00 LCD 80 segment driver "LCD timing controller"

    113 y

    Abstract: HA 1329 QN-08 1329 y-448 AO2222
    Text: Appendix Maximum Fanouts C Maximum Fanouts of Internal Macrocells Maximum Fanouts of Internal Macrocells When input tR/tF = 0.147ns, one fanout (SL = 0.00866pF) Cell Name ad2 ad2b ad2bd2 ad2bd4 ad2bd8 ad2d2 ad2d4 ad2d8 ad3 ad3d2 ad3d4 ad4 ad4d2 ad4d4 ad5


    Original     		PDF 147ns, 00866pF) ao211 ao2111 ao2111d2 ao211d2 ao211d4 ao21d2 ao21d4 ao221 113 y HA 1329 QN-08 1329 y-448 AO2222

    AFBR-703ASDZ

    Abstract: IEC-61000-4-2 RIN12OMA SDD11 SFF-8431 10G SFP SCD11 042UI PRBS31
    Text: AFBR-703ASDZ 850nm Digital Diagnostic SFP+ Transceiver for 10Gb Ethernet 10GBASE-SR Characterization Report Description The AFBR-703ASDZ optical transceivers are reduced cost SFP+ 10 Gigabit Ethernet 10GBASE-SR modules for use on multimode fiber. • Receiver Rise and Fall Times RX TR and RX TF


    Original     		PDF AFBR-703ASDZ 850nm 10GBASE-SR AFBR-703ASDZ 10GBASE-SR SFF-8431 SDD22 SCC22) AV02-1900EN IEC-61000-4-2 RIN12OMA SDD11 10G SFP SCD11 042UI PRBS31

    sot-37

    Abstract: No abstract text available
    Text: Philips Semiconductors Product Specification 16-bit dual supply translating transceiver; 3-state QUICK REFERENCE DATA GND = 0 V; Tamb = 25°C; tr = tf ≤ 2.5 ns FEATURES • • • • • Wide supply voltage range A port: 1.2 to 3.6 V B port: 1.2 to 5.5 V


    Original     		PDF 16-bit 74ALVC164245 74ALVC164245 sot-37

    M3329

    Abstract: No abstract text available
    Text: 023M Ä ft î ì m ft m n m & tf s ^ » m & M ä & 1,002,989 ^ & 71,233 8,221,441 fi m m 455,447 * 730,850 591,441 * * ^ M m ^ ft U » $• m 19,706 79,655 t m # & ; m ^ m © m ft » m 463,260 ^ U A Ä M æ » m ê i n s §i ^ & ^ ^ # M & tf S fi X ^ ^ ^ & tf « m


    OCR Scan     		PDF 160ffl 205R73Ã M3329

    PE1541

    Abstract: PM8943 Philips capacitor 166 Philips electrolytic 132
    Text: Philips Semiconductors Product specification Video driver hybrid amplifier FEATURES PINNING • Typical transition timer, 10 to 90% with C l = 10 pF: - at 35 V (p-p) swing tr = 2.2 ns; tf = 2.0 ns - at 40 V (p-p) swing tr = 2.3 ns; tf = 2.1 ns - CR3424 PIN


    OCR Scan     		PDF CR3424 OT115L. 2600B PE1541, PM8943, PE1541 PM8943 Philips capacitor 166 Philips electrolytic 132

    NEC D 809 F

    Abstract: NEC D 809 L transistor NEC D 986 E7138
    Text: DATA SHEET GaAs MES FET NE713 L to Ku BAND LOW NOISE AMPLIFIER N-CHANNEL GaAs MES FET FEATURES • Low noise figure NF = 0.6 dB TYP. a tf = 4G H z • High associated gain Ga = 14 dB TYP. a tf = 4 GHz • Gate width: Wg = 280 ^¡m • Gate Length: Lg = 0.3 ßm


    OCR Scan     		PDF NE713 E71383B NE71383B] NE71300] NEC D 809 F NEC D 809 L transistor NEC D 986 E7138

    JS8818A-AS

    Abstract: S3V 82 S3V 39
    Text: J S 8 8 1 8 A - A S FEATURES: • LOW NOISE FIGURE 1.3 dB at f = 12 GHz 2.0 dB at f = 18 GHz a 0.3 jum GATE LENGTH ■ HIGH ASSOCIATED GAIN lO d B a tf = 12 GHz 7.5 dB a t f = 18 GHz ■ CHIP FORM ■ HIGH MAXIMUM AVAILABLE GAIN 11 d B a tf = 12 GHz 9.0 dB at f = 18 GHz


    OCR Scan     		PDF JS8818A-AS 18GHz 12GHz 12GHz 1CH7250 JS8818A-AS S3V 82 S3V 39

    gs 069 0605

    Abstract: 4210M 8016 nec 5501 gm
    Text: SUPER LOW NOISE HJ FET FEATURES_ NE4210M01 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY • S U P E R L O W N O IS E F IG U R E : 0.8 dB TYP a tf = 12 GHz • H IG H A S S O C IA T E D G A IN : 11.0 dB TYP a tf = 12 GHz • G A T E W ID T H : W g = 200 jim


    OCR Scan     		PDF NE4210M01 NE4210M01 24-Hour gs 069 0605 4210M 8016 nec 5501 gm

    LPR26-RL2

    Abstract: LPS26-RL2 LPR27-ML5 LPS27-RL2 LPS27-ML5 AC250V6A AC125V3A LPS26-YL8 LPS26-ML5 LPR27-YL8
    Text: LPR &LPS « B Ä Ä tf/li & y 7 s v * Illuminated Pushbutton Switches •Features • ¿ y 'm i- # 1i o m ■ t t « u z m ^ - ^ m L x m t 0 - £ AC125V 3A • DC30V 3A


    OCR Scan     		PDF AC125V DC30V AC1000V AC250V AC125V LPR26-RL2 LPS26-RL2 LPR27-ML5 LPS27-RL2 LPS27-ML5 AC250V6A AC125V3A LPS26-YL8 LPS26-ML5 LPR27-YL8

    transistor d 13009

    Abstract: IC 566 vco transistor j 13009 IC 8085 pin
    Text: PRELIMINARY DATA SHEET NEC NPN SILICON EPITAXIAL TWIN TRANSISTOR FEATURES_ • OUTLINE DIMENSIONS Units in mm LOW NOISE: Package Outline TS06 Q 1:N F= 1.2 dB TYP a tf = 1 GHz, VCE = 3 V, Ic = 7 mA 2.1 ±0.1 j'•*— 1.25 ± 0.1 -*■


    OCR Scan     		PDF UPA832TF 1S21EI2 NE856, NE685) UPA832TF NE85630 NE68530 UPA835TF UPA832TF-T1 transistor d 13009 IC 566 vco transistor j 13009 IC 8085 pin

    Darlington npn stud mount

    Abstract: TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240
    Text: POÜJEREX INC -=11 De J 7Hc14ti51i DGQlflS? 0 | Power Transistors & Darlington Modules T '-3 3 -0 / NPN Power Switching Transistors le Amps y CEO (SUS) (Volts) tf(max) (¡¿sec) Pt(max) Watts Tc (°C) High Safe Operating Area (SOA) 25 40-240 175 1.5 5 25


    OCR Scan     		PDF 7Hc14ti51i MT-52 MT-33 Darlington npn stud mount TO82 2N3429 2N6840 2N1015 2N1016 2N3470-73 TO82 package 40240