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    TF 12N60 Search Results

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    TF 12N60 Price and Stock

    STMicroelectronics STF12N60M2

    MOSFET N-CH 600V 9A TO220FP
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    DigiKey STF12N60M2 Tube 981 1
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    Avnet Americas STF12N60M2 Tube 16 Weeks 1,000
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    Mouser Electronics STF12N60M2 782
    • 1 $1.07
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    Newark STF12N60M2 Bulk 1
    • 1 $1.23
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    STMicroelectronics STF12N60M2 782 1
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    TME STF12N60M2 1
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    Avnet Silica STF12N60M2 17 Weeks 50
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    EBV Elektronik STF12N60M2 17 Weeks 50
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    Alpha & Omega Semiconductor AOTF12N60L

    MOSFET N-CH 600V 12A TO220F
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    DigiKey AOTF12N60L Tube 358 1
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    Alpha & Omega Semiconductor AOTF12N60

    MOSFET N-CH 600V 12A TO220-3F
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    DigiKey AOTF12N60 Tube 1,000
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    TME AOTF12N60 941 1
    • 1 $1.73
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    Alpha & Omega Semiconductor AOTF12N60FD

    MOSFET N-CH 600V 12A TO220-3F
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    TF 12N60 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60K-MT 12N60K-MT QW-R502-B06

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60K-MT Preliminary Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60K-MT are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60K-MT 12N60K-MT O-220F2 QW-R502-B06

    Untitled

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 QW-R502-170

    12n60a

    Abstract: UTC12N60 12N-60a 12N60 12N60B 12N60L 12N60-A 12N60-B
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L QW-R502-170 12n60a UTC12N60 12N-60a 12N60B 12N60L 12N60-A 12N60-B

    12N60L

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 O-220 12N60 O-220F O-220F1 QW-R502-170 12N60L

    UTC12N60

    Abstract: 12n60g 12N60L 12n60 12a 600v 12N60 mosfet 12A 600V
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 O-220F O-220 12N60 O-220F1 O-262 QW-R502-170 UTC12N60 12n60g 12N60L 12n60 12a 600v mosfet 12A 600V

    12N60G

    Abstract: 12N60
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET „ 1 1 TO-220F TO-220F1 FEATURES * RDS ON = 0.8Ω @VGS = 10 V * Ultra low gate charge ( typical 42 nC ) * Low reverse transfer capacitance ( CRSS = typical 25 pF ) * Fast switching capability


    Original     		PDF 12N60 O-220F O-220 12N60 O-220F1 O-262 QW-R502-170 12N60G

    12N60l

    Abstract: No abstract text available
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 QW-R502-170 12N60l

    12n60a

    Abstract: 12N60 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60a 12N60L 12n60 dc 12n60b 12A 650V MOSFET 12N-60a power mosfet 200A 12N60L-x-TF3-T 12N60G

    12n60 dc

    Abstract: 12n60
    Text: UNISONIC TECHNOLOGIES CO., LTD 12N60 Power MOSFET 12 Amps, 600/650 Volts N-CHANNEL MOSFET „ DESCRIPTION The UTC 12N60 are N-Channel enhancement mode power field effect transistors MOSFET which are produced using UTC’s proprietary, planar stripe, DMOS technology.


    Original     		PDF 12N60 12N60 12N60L 12N60G QW-R502-170 12n60 dc

    tf 12n60

    Abstract: No abstract text available
    Text: AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FDL AOB12N60FDL AOTF12N60FDL O-220 O-263 O-220Fate tf 12n60

    Untitled

    Abstract: No abstract text available
    Text: AOT12N60FD/AOB12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOB12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC


    Original     		PDF AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FD/AOB12N60FD/AOTF12N60FD AOT12N60FDL AOB12N60FDL AOTF12N60FDL O-220 O-263 O-220F

    12n60d1c

    Abstract: 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 HGTB12N60D1C 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package
    Text: S E M I C O N D U C T O R HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT April 1995 Features • • • • • • • Package 12A, 600V rDS ON . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.27Ω


    Original     		PDF HGTB12N60D1C 100ns 100oC. TS-001AA O-220) HGTB12N60D1C ICL7667 12n60d1c 12n60d1 600V Current Sensing N-Channel IGBT equivalent 12n60d1c ICL7667 10A 600V MOS 12A, 600V Current Sensing N-Channel IGBT HGTB12N60D1C equivalent TS-001AA Package

    F12n60

    Abstract: 12N60F 12N60 12N-60F 12n60 dc
    Text: AOT12N60FD/AOTF12N60FD 600V, 12A N-Channel MOSFET General Description Product Summary The AOT12N60FD/AOTF12N60FD have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.


    Original     		PDF AOT12N60FD/AOTF12N60FD AOT12N60FD/AOTF12N60FD AOT12N60FDL AOTF12N60FDL O-220 O-220F F12n60 12N60F 12N60 12N-60F 12n60 dc

    12N60ES

    Abstract: FMV12N60ES 12N60E SC-25 zn 48 mosfet
    Text: DATE DRAWN Sep.-29-'08 CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMV12N60ES MS5F7202 H04-004-05 H04-004-03 12N60ES FMV12N60ES 12N60E SC-25 zn 48 mosfet

    12N60E

    Abstract: 12N60ES TO-220F JEDEC
    Text: DATE DRAWN Sep.-29-'08 CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMP12N60ES MS5F7203 H04-004-05 H04-004-03 12N60E 12N60ES TO-220F JEDEC

    RX12N60

    Abstract: 12N60
    Text: CPEC 成都瑞芯电子有限公司 CHENGDU PROMISING CHIP ELECTRONICS CO., LTD RX12N60 600V N 沟道功率 MOSFET 产品简介 地址；成都高新区世纪城南路 216 号天府软件园 D 区 6 号楼 14 层 Tel：086-28-85198496 85198428 Fax：086-28-8519893


    Original     		PDF RX12N60 Tel086-28-85198496 Fax086-28-8519893 RX12N60] 12N60 RX12N60, O-220AB, RX12N60

    12N60ES

    Abstract: 12N60E 12n60 on semiconductor marking code dpack 264MH Sj 07 DIODE SMD dpack marking code 23
    Text: Device Name DATE DRAWN Sep.-29-'08 CHECKED Sep.-29-'08 CHECKED Sep.-29-'08 NAME APPROVED : DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


    Original     		PDF FMI12N60ES FMC12N60ES FMB12N60ES MS5F7204 H04-004-03 12N60ES 12N60E 12n60 on semiconductor marking code dpack 264MH Sj 07 DIODE SMD dpack marking code 23

    C25 diode

    Abstract: GE 0270
    Text: nixY S Advanced Technical Information HiPerFAST IGBT IXGA 12N60CD1 VCES IXGP 12N60CD1 C25 V 24 A 2.1 V 120 ns V CE sat tf'(typ) oe 600 Gil OE Maximum Ratings Symbol Test Conditions V CES Tj =25°C to 150°C 600 V V CGR Tj = 25° C to 150° C; RGE= 1 MU


    OCR Scan     		PDF 12N60CD1 12N60CD1 O-220 O-263 C25 diode GE 0270

    Untitled

    Abstract: No abstract text available
    Text: aixY S Advanced Data Hi Per FAST IGBT IXGA 12N60C IXGP 12N60C V CES ^C25 VCE sat ^fi(typ) Symbol Test Conditions V CES ^ =25°C to150°C VC G R T,J = VGES VGEM C25 Maximum Ratings 600 V (300 V Continuous ±20 V Transient +30 V 24 A 25cC to150°C ;’ FLG t = 1 MQ


    OCR Scan     		PDF 12N60C to150 O-220 O-263

    Untitled

    Abstract: No abstract text available
    Text: Advanced Data Low VCE sat| IGBT with Diode IXSA 12N60AU1 VCES I v C25 CE(sat 600 V 12 A 2.5 V Short Circuit SO A Capability Symbol Test Conditions V * CES Tj = 25°C to 150°C 600 Maximum Ratings vt c g r T, = 25°C to 150°C; RQE = 1 MS2 600 V v Continuous


    OCR Scan     		PDF 12N60AU1 O-263AA

    IXGA 12N60C

    Abstract: No abstract text available
    Text: Advanced Data HiPerFAST IGBT vCES IXGA 12N60C IXGP 12N60C = = = = ^C25 v" CE sat ^fi(typ) 600 V 24 A 2.1 V 55 ns 8j $ Symbol Test Conditions Maximum Ratings VCES Tj = 25‘>C to 150°C 600 V v" cgr Tj = 25°C to 150°C; RGE = 1 M£2 600 V v¥ges v GEM


    OCR Scan     		PDF 12N60C 12N60C O-263 O-220 IXGA 12N60C

    b14 smd diode

    Abstract: B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60
    Text: XYS SCSOAIGBT S-Serles / D-Sertee Contents IGBT v C ES max T0-220 V* CEIsatl IXGP max Tc = 25 °C Tc = 25 “C •c TO-263 (IXGA) TO-247 . TO-247 SMD/.S* T0-204 miniBLOC Page ♦ * V A V 600 16 16 1.8 1.8 48 50 75 2.2 2.5 2.5 IXSH 24N60 iXSH 30N60 IXSH 40N60


    OCR Scan     		PDF T0-220 O-263 O-247 O-247 T0-204 24N60 30N60 40N60 25N100 45N100 b14 smd diode B1108 DIODE SMD b14 smd diode B1100 16N60 B1106 B1112 B1108 D B1116 IXYS 30N60

    12n60d1c

    Abstract: 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent HGTB12N60D1C D05QSS3 BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c
    Text: HARRIS SEMICOND SECTOR fflhfAfS « böE D • M302E71 0QSD25D 2Sb ■ HAS HGTB12N60D1C 12A, 600V Current Sensing N-Channel IGBT December 1993 Features Package • 12 A ,600V JEDEC TS-001AA 5 LEAD TO-220 TOP VIEW • r DS(O N) . 0.27V


    OCR Scan     		PDF M302271 0QSD25D HGTB12N60D1C 100ns HGTB12N60D1C M3D2B71 D05QSS3 12N60D1C 12n60d1c 12n60d1 equivalent 12n60d1c HGTB12N60D1C equivalent BT 33C 12N60 Harris Semiconductor to220 power transistor equivalent+12n60d1c