DF184S
Abstract: DF128S SDF DF141S DF170S tf 216 10a 250v DF240S E117626 DF141S DF66S DF216S
Text: SDF Thermal Cut-Offs SDF Our Thermal Cut-Offs Organic Thermal Element Type are used to prevent fires caused by abnormal heat generation from circuits and other heat producing electrical products. They are a non-resettable thermal fuse which open electrical contacts
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E117626
JET2926-32001-1001-1009
HH05009-2004A-2019A
2010/Nov
DF184S
DF128S
SDF DF141S
DF170S
tf 216 10a 250v
DF240S
E117626
DF141S
DF66S
DF216S
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FGT303
Abstract: t04 88 T04 transistor tr T04 sanken power transistor B105 CF35 FM20 pdp driver
Text: IGBT FGT303 March, 2006 •Package—TO220F ■Features • Generation 3 IGBT Trench Technology • Low VCE(sat): 1.3V typ • Large Collector Current: Icp=160A ■Applications • PDP driver ■Equivalent circuit C(2) Ｇ(1) E(3) Absolute maximum ratings
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FGT303
Package--TO220F
10sec,
T04-001JA-060224
FGT303
t04 88
T04 transistor
tr T04
sanken power transistor
B105
CF35
FM20
pdp driver
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MOSFET 1000v 30a
Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Text: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package
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OM9027SP1
OM9029SP1
OM9028SP1
OM9030SP1
OM9027SP1
OM90Surge
300msec,
MOSFET 1000v 30a
10A, 100v fast recovery diode
OM9029SP1
OM9030SP1
diode 1000V 10a
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FDB44N25
Abstract: n-channel 250V power mosfet FDB44N25TM
Text: UniFET TM FDB44N25 250V N-Channel MOSFET Features Description • 44A, 250V, RDS on = 0.069Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 47 nC)
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FDB44N25
FDB44N25
n-channel 250V power mosfet
FDB44N25TM
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FDAF69N25
Abstract: No abstract text available
Text: UniFET TM FDAF69N25 250V N-Channel MOSFET Features Description • 34A, 250V, RDS on = 0.041Ω @VGS = 10 V These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. • Low gate charge ( typical 77 nC)
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FDAF69N25
FDAF69N25
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Untitled
Abstract: No abstract text available
Text: 2SK3518-01MR Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] Features TO-220F High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3518-01MR
MOSFET200303
O-220F
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Untitled
Abstract: No abstract text available
Text: 2SK3517-01 Super FAP-G Series FUJI POWER MOSFET200303 N-CHANNEL SILICON POWER MOSFET Outline Drawings [mm] TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS Uninterruptible Power Supply
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2SK3517-01
MOSFET200303
O-220AB
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Untitled
Abstract: No abstract text available
Text: 2SK3651-01R [0311] FUJI POWER MOSFET N-CHANNEL SILICON POWER MOSFET Super FAP-G Series Outline Drawings mm Features TO-3PF High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply)
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2SK3651-01R
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Untitled
Abstract: No abstract text available
Text: 2SK3518-01MR FUJI POWER MOSFET 2SK3518-01MR FUJI POWER MOSFET Super FAP-G Series N-CHANNEL SILICON POWER MOSFET Outline Drawings Features 1 10 Applications o Zth ch-c [ C/W] 10 -1 Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters 10
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2SK3518-01MR
O-220F
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Samwin sw830
Abstract: SW830 Samwin CHMC 37
Text: SAMWIN SW830 General Description Features N-Channel MOSFET BVDSS Minimum RDS(ON) (Maximum) ID Qg (Typical) PD (@TC=25 ) This power MOSFET is produced in CHMC with advanced VDMOS technology of SAMWIN. This technology enable power MOSFET to have better characteristics, such as fast switching time,
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SW830
Samwin sw830
SW830
Samwin
CHMC 37
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Untitled
Abstract: No abstract text available
Text: TrenchTM Power MOSFETs VDSS ID25 IXTC110N25T RDS on (Electrically Isolated Tab) N-Channel Enhancement Mode Fast Intrinsic Rectifier Avalanche Rated = 250V = 50A ≤ 27mΩ Ω ISOPLUS220 E153432 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTC110N25T
ISOPLUS220
E153432
110N25T
05-14-12-B
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crt monitor circuit diagram
Abstract: NTE7176 NTE7177
Text: NTE7176 Integrated Circuit High Voltage CRT Driver for Color Monitor Description: The NTE7176 is an intergrated high voltage CRT driver circuit designed for use in color monitor applications. The IC contains three high input impedance, wide band amplifiers which directly drive the
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NTE7176
NTE7176
O-220
NTE7177
0pF-20pF
crt monitor circuit diagram
NTE7177
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KHB5D0N50F
Abstract: KHB5D0N50P D 92 M - 02 DIODE
Text: SEMICONDUCTOR KHB5D0N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB5D0N50P/F
KHB5D0N50F
KHB5D0N50P
D 92 M - 02 DIODE
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KHB5D0N50F
Abstract: No abstract text available
Text: SEMICONDUCTOR KHB5D0N50P/F TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB5D0N50P/F
KHB5D0N50F
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APT0406
Abstract: APT0502 APTM50DDA10T3G 4367 TRANSISTOR
Text: APTM50DDA10T3G Dual Boost chopper MOSFET Power Module 13 14 CR1 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR2 23 7 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM50DDA10T3G
APT0406
APT0502
APTM50DDA10T3G
4367 TRANSISTOR
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APT0406
Abstract: APT0502 APTM50DSK10T3G
Text: APTM50DSK10T3G Dual Buck chopper MOSFET Power Module 13 14 Application • AC and DC motor control • Switched Mode Power Supplies Q2 11 18 22 7 19 10 23 CR1 29 30 8 CR2 31 15 32 16 R1 28 27 26 25 23 22 20 19 18 29 16 30 15 31 14 32 13 2 3 4 7 8 10 11 12
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APTM50DSK10T3G
APT0406
APT0502
APTM50DSK10T3G
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APT0406
Abstract: APT0502 APTM50DSKM65T3G
Text: APTM50DSKM65T3G Dual Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies 13 14 Q1 Q2 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated
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APTM50DSKM65T3G
APT0406
APT0502
APTM50DSKM65T3G
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APT0406
Abstract: APT0502 APTM50DDAM65T3G
Text: APTM50DDAM65T3G Dual Boost chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction 13 14 CR1 CR2 22 7 23 8 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance
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APTM50DDAM65T3G
APT0406
APT0502
APTM50DDAM65T3G
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Untitled
Abstract: No abstract text available
Text: TrenchTM HiperFETTM Power MOSFET VDSS ID25 IXFH110N25T = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXFH110N25T
O-247
110N25T
5-14-12-B
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Untitled
Abstract: No abstract text available
Text: TrenchTM Power MOSFETs VDSS ID25 IXTH110N25T IXTV110N25TS = 250V = 110A ≤ 24mΩ Ω RDS on N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Rectifier TO-247 (IXTH) G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 250 V VDGR TJ = 25°C to 150°C, RGS = 1MΩ
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IXTH110N25T
IXTV110N25TS
O-247
110N25T
5-14-12-B
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Untitled
Abstract: No abstract text available
Text: IRF644B/IRFS644B 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar, DMOS technology. This advanced technology has been especially tailored to
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IRF644B/IRFS644B
O-220
FP001
O-220F
IRFS644B
FP001
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KHB5D0N50F
Abstract: KHB5D0N50P KHB5D0N50F2
Text: SEMICONDUCTOR KHB5D0N50P/F/F2 TECHNICAL DATA N CHANNEL MOS FIELD EFFECT TRANSISTOR General Description KHB5D0N50P A This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for electronic ballast and
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KHB5D0N50P/F/F2
KHB5D0N50P
Fig15.
Fig16.
Fig17.
KHB5D0N50F
KHB5D0N50P
KHB5D0N50F2
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IXTA50N25T
Abstract: IXTH50N25T ixtp50n25t IXTQ50N25T IXTP50n25 IXTP*50N25T 50N25T 50n25 DS99346B ixtq50n25
Text: Trench Gate Power MOSFET IXTA50N25T IXTQ50N25T IXTP50N25T IXTH50N25T VDSS ID25 = = 250V 50A Ω 60mΩ RDS on ≤ N-Channel Enhancement Mode TO-263 AA (IXTA) TO-220AB (IXTP) TO-3P (IXTQ) G G D S S G D (Tab) DS D (Tab) D (Tab) TO-247 (IXTH) Symbol Test Conditions
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IXTA50N25T
IXTQ50N25T
IXTP50N25T
IXTH50N25T
O-263
O-220AB
O-247
062in.
50N25T
1-26-10-A
IXTH50N25T
IXTQ50N25T
IXTP50n25
IXTP*50N25T
50n25
DS99346B
ixtq50n25
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Untitled
Abstract: No abstract text available
Text: Preliminary Technical Information TrenchHVTM Power MOSFET IXTH96N25T IXTQ96N25T IXTV96N25T VDSS ID25 = 250V = 96A Ω ≤ 29mΩ RDS on N-Channel Enhancement Mode Avalanche Rated TO-247 (IXTH) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C
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IXTH96N25T
IXTQ96N25T
IXTV96N25T
O-247
96N25T
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