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STMicroelectronics STF10N60DM2 MOSFET N-CH 600V 8A TO220FP
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	STF10N60DM2	Tube	1,900		1	1 $2.25 10 $2.25 100 $2.25 1000 $0.71794 10000 $0.61625	Buy Now
Avnet Americas	STF10N60DM2	Bulk		16 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.58691	Buy Now
Mouser Electronics	STF10N60DM2		1,990			1 $2.04 10 $1.04 100 $0.931 1000 $0.694 10000 $0.616	Buy Now
Newark	STF10N60DM2	Bulk			1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
STMicroelectronics	STF10N60DM2		1,990		1	1 $2 10 $1.02 100 $0.91 1000 $0.74 10000 $0.74	Buy Now

Bristol Electronics	STF10N60DM2		1,000			1 - 10 - 100 - 1000 - 10000 -	Get Quote
TME	STF10N60DM2				1	1 $1.46 10 $1.32 100 $1.16 1000 $0.9 10000 $0.86	Get Quote
Avnet Silica	STF10N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	STF10N60DM2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Alpha & Omega Semiconductor AOTF10N60 MOSFET N-CH 600V 10A TO220-3F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AOTF10N60	Tube			1,000	1 - 10 - 100 - 1000 $0.69034 10000 $0.69034	Buy Now
TME	AOTF10N60		717		1	1 $1.23 10 $1.11 100 $0.88 1000 $0.81 10000 $0.81	Buy Now
Alpha & Omega Semiconductor AOTF10N60L MOSFET N-CH 600V 10A TO220-3F
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AOTF10N60L	Tube				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Alpha & Omega Semiconductor AOTF10N60CL N
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	AOTF10N60CL	Reel			1,000	1 - 10 - 100 - 1000 $0.63782 10000 $0.54427	Buy Now
STMicroelectronics STF10N60M2 Power MOSFET, N Channel, 600 V, 7.5 A, 600 Milliohms, TO-220FP, 3 Pins, Through Hole - Bulk (Alt: 45AC7550)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	STF10N60M2	Bulk		14 Weeks, 4 Days	1	1 $1.56 10 $1.29 100 $1.04 1000 $0.731 10000 $0.731	Buy Now
	STF10N60M2	Tube		16 Weeks	2,000	1 - 10 - 100 - 1000 - 10000 $0.51952	Buy Now
Mouser Electronics	STF10N60M2		2,979			1 $1.78 10 $0.928 100 $0.835 1000 $0.661 10000 $0.543	Buy Now
Newark	STF10N60M2	Bulk	63		1	1 $1.55 10 $1.28 100 $1.04 1000 $0.725 10000 $0.658	Buy Now
STMicroelectronics	STF10N60M2		2,979		1	1 $1.74 10 $0.91 100 $0.82 1000 $0.76 10000 $0.76	Buy Now
Bristol Electronics	STF10N60M2		1,900			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TME	STF10N60M2				1	1 $1.39 10 $1.17 100 $0.91 1000 $0.72 10000 $0.72	Get Quote
Avnet Silica	STF10N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Chip1Stop	STF10N60M2	Tube	2,865			1 $1.33 10 $0.809 100 $0.408 1000 $0.366 10000 $0.346	Buy Now
EBV Elektronik	STF10N60M2			17 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now

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TF 10N60 Datasheets Context Search

Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	PDF	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60at QW-R502-743
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z-Q Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60Z-Q is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	10N60Z-Q 10N60Z-Q 10N60ZL-TF1-T 10N60ZG-TF1-T QW-R502-B05
10N60K Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	PDF	10N60K 10N60K O-220F QW-R502-743
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	PDF	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60KG-TF1-T O-22at QW-R502-743
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  1 DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	PDF	10N60K 10N60K O-220F O-220F1 QW-R502-743
Untitled Abstract: No abstract text available Text: UNISONIC TECHNOLOGIES CO., LTD 10N60Z Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60Z is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	10N60Z 10N60Z QW-R502-936
10N60G Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l
tf 10n60 Abstract: MOSFET 10n60 10N60 equivalent+of+10N60+mosfet Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	10N60 10N60 QW-R502-119 tf 10n60 MOSFET 10n60 equivalent+of+10N60+mosfet
10N60G TO-220F Abstract: UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	PDF	10N60 10N60 QW-R502-119 10N60G TO-220F UTC10N60L,10N60L, UTC10N60L,10N60L utc 10n60l
10N60L Abstract: 10N60G Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60L 10N60G
mosfet 10a 600v Abstract: MOSFET 10n60 10N60 10N60G 10N60G-TA3-T 10N60L tr 10n60 UTC10N60 utc 10n60l Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION 1 The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	10N60 10N60 O-220 O-220F O-220F1 QW-R502-119 mosfet 10a 600v MOSFET 10n60 10N60G 10N60G-TA3-T 10N60L tr 10n60 UTC10N60 utc 10n60l
UTC10N60 Abstract: 10N60G-TF1-T tr 10n60 10N60L-TQ2-T 10N60G TO-220F UTC 10N60L Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 UTC10N60 10N60G-TF1-T tr 10n60 10N60L-TQ2-T 10N60G TO-220F UTC 10N60L
UTC10N60 Abstract: utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10n60 QW-R502-119 10N60G-TQ2-T 10N60L-TQ2-T Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	10N60 10N60 QW-R502-119 UTC10N60 utc 10n60l 10N60G 10N60G-TF3-T 10N60L 10N60L-TF2-T 10N60G-TQ2-T 10N60L-TQ2-T
10N60G TO-220F Abstract: MOSFET 10n60 utc 10n60l 10N60 TO-220-F2 10N60G Text: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET 1 DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche	Original	PDF	10N60 O-220 10N60 O-220F O-220F1 O-220F2 QW-R502-119 10N60G TO-220F MOSFET 10n60 utc 10n60l TO-220-F2 10N60G

IXTP10N60PM Abstract: No abstract text available Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	PDF	10N60PM O-220 405B2 IXTP10N60PM
10N60PM Abstract: IXTP10N60PM Text: Preliminary Technical Information PolarHVTM Power MOSFET IXTP 10N60PM VDSS ID25 RDS on (Electrically Isolated Tab) = 600 V = 5 A Ω ≤ 740 mΩ N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C	Original	PDF	10N60PM O-220 405B2 10N60PM IXTP10N60PM
MOSFET IXYS TO-263 Abstract: No abstract text available Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	10N60P 10N60P O-220 O-263 405B2 MOSFET IXYS TO-263
Untitled Abstract: No abstract text available Text: Advanced Technical Information PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A Ω = 740 mΩ N-Channel Enhancement Mode Symbol Test Conditions Maximum Ratings VDSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ	Original	PDF	10N60P 10N60P O-263 O-220 405B2
Untitled Abstract: No abstract text available Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	PDF	10N60C5M O-220 20090209d
10N60C Abstract: GS54 Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET	Original	PDF	10N60C5M O-220 20070704a9 10N60C GS54
10N60C Abstract: c16tj 10N60C5M Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	PDF	10N60C5M O-220 20080523c 10N60C c16tj 10N60C5M
10N60C5M Abstract: kw0649 IGBT GS c16tj 10N60C Text: Advanced Technical Information IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω CoolMOS Power MOSFET Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET Conditions	Original	PDF	10N60C5M O-220 10N60C5M kw0649 IGBT GS c16tj 10N60C
10N60C Abstract: C3525 Text: Advanced Technical Information COOLMOS * Power MOSFET IXKP 10N60C5M ID25 = 5.4 A VDSS = 600 V RDS on max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G S Features MOSFET	Original	PDF	10N60C5M O-220 10N60C C3525
10N60C Abstract: 10N60C5M Text: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	PDF	10N60C5M O-220 20090209d 10N60C 10N60C5M

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TF 10N60 Search Results

TF 10N60 Price and Stock

STMicroelectronics STF10N60DM2

Alpha & Omega Semiconductor AOTF10N60

Alpha & Omega Semiconductor AOTF10N60L

Alpha & Omega Semiconductor AOTF10N60CL

STMicroelectronics STF10N60M2

TF 10N60 Datasheets Context Search

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10N60K

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10N60G

tf 10n60

10N60G TO-220F

10N60L

mosfet 10a 600v

UTC10N60

UTC10N60

10N60G TO-220F

IXTP10N60PM

10N60PM

MOSFET IXYS TO-263

Untitled

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10N60C

10N60C

10N60C5M

10N60C

10N60C