Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TESLA SENSOR Search Results

    TESLA SENSOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    MRMS591P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRMS581P Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRUS74SD-001 Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRMS791B Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd
    MRUS74SK-001 Murata Manufacturing Co Ltd Magnetic Sensor Visit Murata Manufacturing Co Ltd

    TESLA SENSOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: SPECIFICATIONS base unit* Frequency range Min Frequency range Max Range electrical field [V/m] typical Min (1D) Range electrical field [V/m] (typical) Max (1D) Range magnetic field [Tesla] (typical) Min (3D!) Range magnetic field [Tesla] (typical) Max (3D!)


    Original
    PDF 555GHz. -90dBm 20dBm. 40dBm -50dBm 10dBm

    gaussmeter

    Abstract: BB 150 CURRENT SENSOR BB-600 IHA-100 IHA-25 Tesla sensor Current Sensors BB-150 SENSOR bell BB25
    Text: Calibration Services Test Services Magnetics/F.W. Bell New Products Product Categories Open Loop Current Sensors Closed Loop Current Sensors About F.W. Bell Current Measurement F.W. Bell Gauss/Tesla Meters Hall Effect Sensors MAGSCAN NT Series CMR-25 Support Contacts


    Original
    PDF CMR-25 IHA-150 50kHz PI-600 25kHz MCS100/200-A 30kHz 300/400-A 20kHz gaussmeter BB 150 CURRENT SENSOR BB-600 IHA-100 IHA-25 Tesla sensor Current Sensors BB-150 SENSOR bell BB25

    Magnetic ink detection

    Abstract: gmr sensor vehicle detection vehicle Speed detection sensor Tesla sensor magnetic sensor 44 E AA002-02 reluctance gmr Sensors IR proximity sensors linear displacement sensor
    Text: APPLICATION NOTES MAGNETIC SENSORS P R E C I S I O N I N E L E C T R O N I C S GMR sensors Displacement and proximity sensors Sample pressure sensor implementation GMR sensors exhibit excellent linearity and repeatability, and their high sensitivity allows them


    Original
    PDF

    CS-501GR

    Abstract: CS-401 Tesla sensor MANGANIN IMI-7031 1 nanofarad K capacitor 60Two CS-401GR-A
    Text: CS Capacitance Temperature Sensors 1-35 CS Capacitance Temperature Sensors* • Virtually no magnetic field dependence • Capable of millikelvin control stability in the presence of strong magnetic field • CS-501 monotonic in C versus T to nearly room temperature


    Original
    PDF CS-501 CS-401 CS-501 CS-401GR-A. CS-401GR-A CS-501GR CS-501GR CS-401 Tesla sensor MANGANIN IMI-7031 1 nanofarad K capacitor 60Two CS-401GR-A

    BMN-35H

    Abstract: recoma magnet AN5020 AS5020 Tesla sensor Bomatec
    Text: AN5020_3 MAGNETIC PROPERTIES REQUIRED FOR USE WITH THE AS5020 APPLICATION NOTE Introduction The AS5020 6-bit Absolute Angular Position Encoder device provides the positional information of a simple magnetic source placed close to it. The AS5020 device provides for a


    Original
    PDF AN5020 AS5020 AS5020 BMN-35H recoma magnet Tesla sensor Bomatec

    BMN-35H

    Abstract: AN5020 AS5020 CH-8181
    Text: AN5020_3 AN5020_3 MAGNETIC PROPERTIES REQUIRED FOR USE WITH THE AS5020 MAGNETIC PROPERTIES REQUIRED FOR USE WITH THE AS5020 APPLICATION NOTE Introduction Reference Magnet Characterization The AS5020 6-bit Absolute Angular Position Encoder device provides the positional information of a magnetic source that


    Original
    PDF AN5020 AS5020 BMN-35H BMN-35H AS5020 CH-8181

    Lake Shore Cryotronics

    Abstract: TG-120-CU IMI-7031 tesla Diode GaAlAs Diode AT 330 magnetic diode sensor TG-120 DIODE 4d replacement TG-120PL
    Text: 1-12 TG-120 Gallium-Aluminum-Arsenide Diodes Series TG-120 Gallium-Aluminum-Arsenide Diodes* • GaAlAs Diodes • • Voltage-temperature characteristics are monotonic over the useful temperature range from 1.4 K to 500 K. Excellent sensitivity dV/dT at temperatures


    Original
    PDF TG-120 Lake Shore Cryotronics TG-120-CU IMI-7031 tesla Diode GaAlAs Diode AT 330 magnetic diode sensor DIODE 4d replacement TG-120PL

    KMX61G

    Abstract: No abstract text available
    Text: KMX61G Mag-Accel Combo Industry’s First Micro-Amp Magnetic Gyro FEATURES APPLICATIONS • 6-axis mag-accel with emulated gyro output • Small footprint 3x3x0.9mm  Magnetometer auto-calibration and magnetic interference rejection algorithms  Embedded temperature sensor


    Original
    PDF KMX61G 512-byte KMX61G

    DT-670-SD

    Abstract: Silicon Diode DT-470 dt 670 c cu DT-670A-SD DT-670C-SD DT-670B-SD DT-670 Lake Shore Cryotronics DT-670E-BR Silicon Diode DT-670
    Text: LakeShore DT-670 Series Silicon Diode Temperature Sensor Lake Shore’s DT-670 diode temperature sensors are the most advanced silicon diodes in Lake Shore’s extensive line of cryogenic temperature sensors. Backed by more than thirty years of excellence in cryogenic temperature


    Original
    PDF DT-670 DT-670E-BR DT-670A-SD DT-670B-SD DT-670C-SD DT-670D-SD DT-670-SD- DT-670-SD Silicon Diode DT-470 dt 670 c cu DT-670A-SD DT-670C-SD DT-670B-SD Lake Shore Cryotronics DT-670E-BR Silicon Diode DT-670

    A3121 8 pin

    Abstract: A3144E UGN3019 ugn3020 ugn3020 hall effect device A3121 ugn3040 UGN3120U A3144 hall effect A3144
    Text: FAQ from Unipolar Hall-Effect Digital Switches A3121/2/3, A3141/2/3/4 E LL G Most Frequently Asked Questions (FAQ) A R O MicroSystems, Inc. 1. I am trying to replace UGN3120U in my application. What do you recommend? We recommend using A3144EU because the operate point range is 70 to 350 gauss


    Original
    PDF A3121/2/3, A3141/2/3/4) UGN3120U A3144EU UGN3120U) A3121 UGN3019/3113/3119; A3141 UGN3040/3140; A3144 A3121 8 pin A3144E UGN3019 ugn3020 ugn3020 hall effect device A3121 ugn3040 A3144 hall effect

    Silicon Diode DT-470

    Abstract: LR 207 DT-470-SD-13 DT-470-CU-13 DT-470-SD-12A transistor BR 471 A dt 420 DT-470 DT-470-CY-13 DT-471-SD
    Text: 1-6 Silicon Diodes 1987 COMPE R DT-470 and DT-471 Features and Description Silicon Diodes DT-470 Features • Advanced, hermetic ceramic and sapphire packaging with the lowest self-heating errors • Monotonic temperature response over its useful range from 1.4 K to 475 K


    Original
    PDF DT-470 DT-471 DT-470 IMI-7031 Silicon Diode DT-470 LR 207 DT-470-SD-13 DT-470-CU-13 DT-470-SD-12A transistor BR 471 A dt 420 DT-470-CY-13 DT-471-SD

    Tesla sensor

    Abstract: TESLA 1 alnico
    Text: APPLICATION DATA Solid State Sensors Magnet Conversion Chart MULTIPLICATION FACTORS From Gauss Tesla Millitesla Weber/Inch2 Weber/Meter2 Line/Inch2 Gammas 1 1 1 0 .0 1.550 1 X 104 1.55 1 X 10-5 Tesla 1 X 1 0 -“ 1 1.5500 X 103 1 X 10“ 9 Millitesla 0.1 1


    OCR Scan
    PDF

    KF520

    Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
    Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5


    OCR Scan
    PDF 15Blatnà KF520 KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784

    Untitled

    Abstract: No abstract text available
    Text: APPLICATION DATA Solid State Sensors Magnet Conversion Chart MULTIPLICATION FACTORS From Millitesla Weber/Inch2 1x10" 1 0 .0 1 .5 5 0 X 1 0 7 1 1 X I 0 -3 1 .5 5 0 0 X 1 0 3 Gauss Tesla To: Gauss 1 Tesla 1 X 1 0 -4 Line/Inch2 Gammas 1 X 104 1 .5 5 X 1 0 7


    OCR Scan
    PDF

    Untitled

    Abstract: No abstract text available
    Text: Halbleiter-Sensoren Semiconductor Sensors Symbole Begriffe Symbols Terms s M agnetische Induktion B M agnetic induction Fl Linearitätsfehler 'o u t Linearity error Output current O perating current A usgangsstrom Arbeitsstrom , Betriebsgleichstrom A juI !


    OCR Scan
    PDF 65210-L101 65210-D 65210-L100-W 65212-D 65212-L1004

    Untitled

    Abstract: No abstract text available
    Text: TL173I, TL173C LINEAR HALL-ELLECT SENSORS D2526, MARCH 1979-REVISED APRIL 1988 • Output Voltage Linear with Applied Magnetic Field • Sensitivity Constant Over Wide Operating Temperature Range • Solid-State Technology • Three-Terminal Device • Senses Static or Dynamic Magnetic Fields


    OCR Scan
    PDF TL173I, TL173C D2526, 1979-REVISED TL173I TL173C

    tl173c

    Abstract: TL173I TL173
    Text: TL173I, TL173C LINEAR HALL-ELLECT SENSORS D2526, MARCH 1979-REV ISED APRIL 1988 • Output Voltage Linear with Applied Magnetic Field • Sensitivity Constant Over Wide Operating Temperature Range • Solid-State Technology • Three-Terminal Device • Senses Static or Dynamic Magnetic Fields


    OCR Scan
    PDF TL173I, TL173C D2526, 1979-REV TL173I TL173

    TL3019

    Abstract: TESLA transistor TL3019C UGN3019 D2903 Tesla sensor
    Text: TL3019C SILICON HALL EFFECT SWITCH D2903, JULY 1 9 8 5 — REVISED APRIL 1988 Magnetic-Field Sensing Hall-Effect Input LU P A C K A G E TOP VIEW On-Off Hysteresis • Small Size • Standard Bipolar Technology Minimizes ESD Susceptibility • Io l • • ■ 20 mA Min at V o L “ 0-4 V


    OCR Scan
    PDF TL3019C D2903, UGN3019 TL3019 TESLA transistor UGN3019 D2903 Tesla sensor

    tl3103

    Abstract: TL3103C TL3103I D3184 Linear Hall-effect Sensor Toroid International
    Text: TL3103I, TL3103C LINEAR HALL-EFFECT SENSORS D3184, MAY 1 98 5 -REVISED FEBRUARY 1989 LU PACKAGE TOP VIEW Output Voltage Linear with Applied Magnetic Field Sensitivity Stable Over Wide Operating Temperature Range V CC Buried Hall Cell Reduces Changes Due to


    OCR Scan
    PDF TL3103I, TL3103C D3184, TL3103I TL3103 D3184 Linear Hall-effect Sensor Toroid International

    Hall sensors Siemens

    Abstract: hall sensor siemens Siemens Hall K/tesla semiconductor Hall Hall Siemens
    Text: SIEMENS 3.1 Hall-Effect Sensors Fundamentals The Hall effect, so named after its discoverer Edwin Hall in 1879, is the result of the Lorentz force on moving electrons subjected to a magnetic field. Fig. 1a is a representation of the current flow in a material when no magnetic field is present. As


    OCR Scan
    PDF

    tl3103

    Abstract: relative magnet permeability l3103 TL3103C Weber Sensors
    Text: TL3103I, TL3103C LINEAR HALL-EFFECT SENSORS D3184, M A Y 1985 — R E V ISE D FEBRU ARY 1989 • LU P A C K A G E Output V oltage Linear with Applied M agn etic Field TOP VIEW • Sensitivity Stable Over W ide Operating Temperature Range • Buried Hall Cell Reduces C h an ge s Due to


    OCR Scan
    PDF TL3103I, TL3103C D3184, tl3103 relative magnet permeability l3103 Weber Sensors

    TL172

    Abstract: TL172C
    Text: TL172 C N O R M A LLY O FF SILICON H A LL-EFFEC T SW ITCH D2490, AUGUST 1977-RE VIS E D APRIL 1988 • Magnetic-Field Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Collector Output • Normally Off Switch


    OCR Scan
    PDF TL172 D2490, 1977-RE TL172C

    tl170 hall effect

    Abstract: tl170 hall TL170C TL170 CT SENSOR AX2535
    Text: TL170C SILICON HALL-EFFECT SWITCH • Magnetic-Fleld Sensing Hall-Effect Input • On-Off Hysteresis • Small Size • Solid-State Technology • Open-Coilector Output D24Q8, DECEMBER 1977. REVISED APRIL 1988


    OCR Scan
    PDF TL170C D24Q8, TL170 tl170 hall effect tl170 hall CT SENSOR AX2535

    TL170C

    Abstract: TL170 L70C tesla switch Tesla sensor ERO Electronic irf540 TTL tesla NZ 70 tl170 hall tl170 hall effect
    Text: TL170C SIUCON HAU-EFFECT SWITCH 0 3 4 0 0 , D E C E M B E R 1877. R fV tS C O A P M L 1 0 M • Magnetfc-FWd Sensing Hall-Effect Input • On-Off Hysteresis • Small SI*« • Solid-State Technology • Open-Coiector Output description The T L17 0C is s low-cost magnetteal ly operated


    OCR Scan
    PDF TL170C TL170C TL170 SS6012 L70C tesla switch Tesla sensor ERO Electronic irf540 TTL tesla NZ 70 tl170 hall tl170 hall effect