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    TESLA SEMICONDUCTORS Search Results

    TESLA SEMICONDUCTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TPHR7404PU Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 40 V, 0.00074 Ω@10V, SOP Advance, U-MOS-H Visit Toshiba Electronic Devices & Storage Corporation
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    TESLA SEMICONDUCTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    MA 7805 tesla

    Abstract: TESLA MA 7805 relative permittivity of permalloy ring core permalloy bh curve Anisotropic magnetoresistance compass angle position sensors relative magnet permeability ring core permalloy curve 7805 n-p-n transistor right siemens wheel speed sensor PWM
    Text: Magnetoresistance MR Transducers And How to Use Them as Sensors 1st. Edition, July 2004 Perry A. Holman, Ph.D. ii Copyright c 2004 Honeywell International Inc. All rights reserved. Acknowledgments The author would like to thank Dr. James R. (Bob) Biard for many, many late night


    Original     		PDF

    Hall sensors Siemens

    Abstract: KSY14 TESLA KSY14 Gold detector magnetic sensor circuit 4 pin hall sensor hall sensor sot143 hall sensor sot-143 siemens magnetic sensors ksy14 siemens magnetic sensors KSY14, Infineon
    Text: KSY14 – the Ultra-flat, Versatile Hall Sensor Reprint∗ from Siemens Components XXV 1990 . No.5. Page 167 to 172 Author: Martha Wolfrum Hall sensors are semiconductors that are sensitive to a magnetic field and can produce voltages in the presence of constant or varying magnetic fields. The new


    Original     		PDF KSY14 KSY14 Hall11, B159-H6376-X-X-7600 Hall sensors Siemens KSY14 TESLA Gold detector magnetic sensor circuit 4 pin hall sensor hall sensor sot143 hall sensor sot-143 siemens magnetic sensors ksy14 siemens magnetic sensors KSY14, Infineon

    DN8899UAS

    Abstract: 4 pin hall 6 SOH hall sensor 303
    Text: Hall ICs DN8899UAS Hall IC for alternative magnetic field SOH-4D type • Overview Unit: mm 3.0±0.3 0.6±0.2 4 1.5±0.3 0.4±0.2 +0.15 0.4±0.15 3 0.2 –0.05 0.1±0.1 2 0.95±0.2 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol t n l ht low disc dis ena ten low


    Original     		PDF DN8899UAS DN8899UAS 4 pin hall 6 SOH hall sensor 303

    DN8899

    Abstract: DN8899S DN8899SE
    Text: Hall ICs DN8899/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN8899 (1.0) 0.55±0.15 In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized power supply, and a temperature compensation circuit are integrated on a single


    Original     		PDF DN8899/SE/S DN8899 DN8899 DN8899S DN8899SE

    DN8897

    Abstract: DN8897S DN8897SE Tesla
    Text: Hall ICs DN8897/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN8897 2.0±0.2 (1.0) (0.7) (1.0) (5°) (1.0) • Overview 0.55±0.15 0.8±0.1 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo


    Original     		PDF DN8897/SE/S DN8897 DN8897 DN8897S DN8897SE Tesla

    car pulse hall sensor

    Abstract: 5 pin package hall sensor
    Text: Hall ICs DN8899/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN8899 • Overview 2.0±0.2 1.0 4.0±0.2 10.5±0.5 0.7 4.5±0.2 In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized power supply, and a temperature compensation circuit are integrated on a single


    Original     		PDF DN8899/SE/S DN8899 car pulse hall sensor 5 pin package hall sensor

    DN8899

    Abstract: DN8899S DN8899SE Tesla
    Text: Hall ICs DN8899/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN8899 2.0±0.2 (1.0) (1.0) (0.7) (5°) (1.0) • Overview 0.55±0.15 ue pl d in an c se ed lud pl vi an m m es si tf ed ain ai fo ol


    Original     		PDF DN8899/SE/S DN8899 DN8899 DN8899S DN8899SE Tesla

    TESLA 1

    Abstract: TESLA semiconductors
    Text: Hall ICs DN8897/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN8897 • Overview 2.0±0.2 1.0 4.0±0.2 10.5±0.5 0.7 4.5±0.2 In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized power supply, and a temperature compensation circuit are integrated on a single


    Original     		PDF DN8897/SE/S DN8897 TESLA 1 TESLA semiconductors

    "rotation sensor"

    Abstract: DN8897 DN8897S DN8897SE
    Text: Hall ICs DN8897/SE/S Wide operating temperature range −40°C to +100°C Alternating magnetic field operation Unit: mm DN8897 (1.0) 0.55±0.15 In each of Hall ICs, a Hall element, an amplifier circuit, a Schmidt circuit, a stabilized power supply, and a temperature compensation circuit are integrated on a single


    Original     		PDF DN8897/SE/S DN8897 "rotation sensor" DN8897 DN8897S DN8897SE

    10KV SiC

    Abstract: No abstract text available
    Text: Fourth Quarter 2004 Volume16, Number 4 ISSN 1054-7231 In This Issue President’s Message. . . . . . . . . . . . . 3 From The Editor . . . . . . . . . . . . . . . . 4 Aachen Meeting Minutes . . . . . . . . . 4 APEC 2005 . . . . . . . . . . . . . . . . . . . 6


    Original     		PDF Volume16, 10-kV, 10KV SiC

    hall effect sensor based non contact tachometer f

    Abstract: hall effect sensor based non contact tachometer for electrical motors speed measurements u18 sensor hall hall sensor u18 FLUXGATE MLX90237 US5881EUA application note schematic inductive proximity sensor hall switch ignition u18 hall
    Text: 3 Section 3 - Applications Section 3 - Applications Introduction Solid-state switches have been available for many years. In various applications, Hall- Effect Sensors Hall ICs have replaced mechanical contact switches completely. In the mid 1980’s the ignition points in automobiles


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    Untitled

    Abstract: No abstract text available
    Text: WHITE paper White PAPER High-voltage DC distribution is key to increased system efficiency and renewable-energy opportunities Written by: Stephen Oliver Vice President, VI Chip Product Line November 2012 A transition to 400 VDC in power distribution and conversion will help meet


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    PFC 3kw

    Abstract: 3kw pfc power amplifier 3000w diagram 3kw smps pfc smps 3kw 3kw pfc using l4981 application note 3000w smps STTA2006DI cost of Inductor smps inductor TRANSISTOR 3kw
    Text: APPLICATION NOTE CIRCUITS FOR POWER FACTOR CORRECTION WITH REGARDS TO MAINS FILTERING by J. M. Bourgeois 1. INTRODUCTION 1.1 Basic principles of operation The new European Norms EN 60555 and the international standard IEC555 will impose a limit on the harmonic content of the input current of mains


    Original     		PDF IEC555 EN60555 PFC 3kw 3kw pfc power amplifier 3000w diagram 3kw smps pfc smps 3kw 3kw pfc using l4981 application note 3000w smps STTA2006DI cost of Inductor smps inductor TRANSISTOR 3kw

    smps 3kw

    Abstract: 3kw smps pfc 1500w mosfet power amplifier circuit diagram 3kw pfc using l4981 application note PFC 3kw L4981 3000w 3000W power supply 3000w smps 3kw pfc power amplifier 3000w diagram
    Text: APPLICATION NOTE CIRCUITS FOR POWER FACTOR CORRECTION WITH REGARDS TO MAINS FILTERING by J. M. Bourgeois 1. INTRODUCTION 1.1 Basic principles of operation The new European Norms EN 60555 and the international standard IEC555 will impose a limit on the harmonic content of the input current of mains


    Original     		PDF IEC555 EN60555 smps 3kw 3kw smps pfc 1500w mosfet power amplifier circuit diagram 3kw pfc using l4981 application note PFC 3kw L4981 3000w 3000W power supply 3000w smps 3kw pfc power amplifier 3000w diagram

    FLUXGATE

    Abstract: search-coil GIANT "METAL DETECTOR" APS520 magnetodiode HS07 squid Magneto-inductive Displacement Sensors schematic inductive proximity sensor DE-710 Hall sensors Siemens
    Text: A New Perspective on Magnetic Field Sensing Michael J. Caruso Tamara Bratland Honeywell, SSEC 12001 State Highway 55 Plymouth, MN 55441 Dr. Carl H. Smith Robert Schneider Nonvolatile Electronics, Inc. 11409 Valley View Road Eden Prairie, MN 55344 <www.ssec.honeywell.com>


    Original     		PDF AN-201. SP-1220, FLUXGATE search-coil GIANT "METAL DETECTOR" APS520 magnetodiode HS07 squid Magneto-inductive Displacement Sensors schematic inductive proximity sensor DE-710 Hall sensors Siemens

    hamamatsu photomultiplier R300

    Abstract: 931A Hamamatsu Hamamatsu r300 6199 photomultiplier R300 pmt hamamatsu pmt R300 RCA 931-A Photomultiplier Tube Hamamatsu photomultiplier RCA 931A photomultiplier R928, hamamatsu
    Text: CHAPTER 1 INTRODUCTION 2007 HAMAMATSU PHOTONICS K. K. 2 1.1 CHAPTER 1 INTRODUCTION Overview of This Manual The following provides a brief description of each chapter in this technical manual. Chapter 1 Introduction Before starting to describe the main subjects, this chapter explains basic photometric units used to measure


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    Philips Application Note ECO6907

    Abstract: ferroxcube 4C4 toroid core philips 3h1 ferrite material 3H1 ferroxcube Design of H.F. Wideband Power Transformers 3h1 ferrite material ECO6907 Philips Components, Soft Ferrites Data Handbook M Philips Components, Soft Ferrites Data Handbook philips 3h1 pot core
    Text: APPLICATION NOTE Design of HF wideband power transformers ECO6907 Philips Semiconductors Design of HF wideband power transformers Application Note ECO6907 CONTENTS 1 INTRODUCTION 2 TRANSFORMER SPECIFICATION 3 INFLUENCE OF THE CORE ON PERFORMANCE 3.1 3.2 Primary Inductance


    Original     		PDF ECO6907 SCA57 Philips Application Note ECO6907 ferroxcube 4C4 toroid core philips 3h1 ferrite material 3H1 ferroxcube Design of H.F. Wideband Power Transformers 3h1 ferrite material ECO6907 Philips Components, Soft Ferrites Data Handbook M Philips Components, Soft Ferrites Data Handbook philips 3h1 pot core

    ef12.6 core transformer

    Abstract: EF12.6 marcon capacitor nc high power FERRITE TRANSFORMER HIGH FREQUENCY Transformer ee 19 SMALL high frequency transformer EE type bobbin EE 16 bobbin 5 5 P-Channel Depletion Mosfets RC snubber for 3 phase rectifier bridge
    Text: AN701 Designing HighĆFrequency DCĆtoĆDC Converters with the Si9114A Switchmode Controller by Bijan E. Mohandes Introduction In 1987 Siliconix introduced the Si9100 monolithic switchmode PWM controller and established the trend for low-power, high-efficiency dc-to-dc converters. This


    Original     		PDF AN701 Si9114A Si9100 ef12.6 core transformer EF12.6 marcon capacitor nc high power FERRITE TRANSFORMER HIGH FREQUENCY Transformer ee 19 SMALL high frequency transformer EE type bobbin EE 16 bobbin 5 5 P-Channel Depletion Mosfets RC snubber for 3 phase rectifier bridge

    EF12.6

    Abstract: resonant single ended forward converter SI9420 Si9114ADY Marcon TCCR philips capacitor cross reference .01 microfarad Schottky Diode B29 bipolar capacitor 1000MF 100v EE 20 bobbin Si9110
    Text: AN701 Vishay Siliconix Designing High-Frequency DC-to-DC Converters With the Si9114A Switchmode Controller INTRODUCTION Vishay Siliconix’s Si9100 monolithic switchmode PWM controller established the standard for low-power, highefficiency dc-to-dc converters. This versatile device integrates


    Original     		PDF AN701 Si9114A Si9100 16-Jan-01 EF12.6 resonant single ended forward converter SI9420 Si9114ADY Marcon TCCR philips capacitor cross reference .01 microfarad Schottky Diode B29 bipolar capacitor 1000MF 100v EE 20 bobbin Si9110

    Siliconix mosfet guide

    Abstract: AN701 EF12.6 AN87 siliconix EE 70 bobbin Marcon TCCR P-Channel Depletion Mosfets SI910
    Text: AN701 Vishay Siliconix AN701 Designing High-Frequency DC-to-DC Converters with the Si9114A Switchmode Controller INTRODUCTION In 1987 Siliconix introduced the Si9100 monolithic switchmode PWM controller and established the trend for lowpower, high-efficiency dc-to-dc converters. This versatile


    Original     		PDF AN701 Si9114A Si9100 14-Nov-97 Siliconix mosfet guide AN701 EF12.6 AN87 siliconix EE 70 bobbin Marcon TCCR P-Channel Depletion Mosfets SI910

    AN701

    Abstract: TCMT1020 bipolar capacitor 1000MF 100v BYG22B Si9100 Si9110 Si9114A Si9114ADY Si9420DY TL431
    Text: AN701 Siliconix Designing HighĆFrequency DCĆtoĆDC Converters with the Si9114A Switchmode Controller by Bijan E. Mohandes Introduction In 1987 Siliconix introduced the Si9100 monolithic switchmode PWM controller and established the trend for lowĆpower, highĆefficiency dcĆtoĆdc converters.


    Original     		PDF AN701 Si9114A Si9100 AN701 TCMT1020 bipolar capacitor 1000MF 100v BYG22B Si9110 Si9114ADY Si9420DY TL431

    Untitled

    Abstract: No abstract text available
    Text: SIEMENS 2.1 Magneto Resistors Fundamentals Magneto resistors are magnetically influenced resistors of InSb/NiSb material which work according to the Gauss effect. The charge carriers which flow through the semiconductor material experience a sideways action in a traverse magnetic field by


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    MH 74141

    Abstract: Tesla katalog MH74S04 MH74188 information applikation MH74S287 mikroelektronik RFT CDB404E ucy 74132 MZH 115
    Text: m o N r ^ e le l- c fe n a n il- c Information Applikation ._ B|B Information Applikation Heft 26: IMPORT-IS Teil 2 i ' . • fbkj veb Halbleiterwerk frankfurt/oder Ü B d batriab im vab ko m binat mfcr m M ftrnnllt DER TECHNIK I Bezirksvorstand Frankfurt/O.


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    MH1SS1

    Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
    Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik


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