KF520
Abstract: KT725 diac kr 206 KT707 KD502 kt201 KT206-200 KU607 KYS 30 40 diode KT784
Text: TESLA ECIMEX, a. s. T E /1 \L /I Sem iconductor Discrete Devices Sem iconductor Discrete Devices CONTENTS . 3 TRANSISTORS. 5
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15Blatnà
KF520
KT725
diac kr 206
KT707
KD502
kt201
KT206-200
KU607
KYS 30 40 diode
KT784
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Tesla
Abstract: SBV525 RHY19 tesla semiconductor asco Q61708 tesla b 100
Text: R H Y 19, SBV525 Hall probes for small air gaps Hall-effect device RHY 19 and SBV 525 are designed for magnetic field measure ments in extremely narrow air gaps semiconductor material InAs . Hall voltage leads: blue tubing; control current leads: red tubing.
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RHY19,
SBV525
RHY19
Q61708-Y19
Q64099-V
Tesla
SBV525
tesla semiconductor
asco
Q61708
tesla b 100
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Tesla
Abstract: SV210 TESLA 110 SV230S SV230 YV20 tesla b 100
Text: SV 210, SV 230 S Hall signal probes w ith vapour-deposited layer SV 210, SV 230 S are medium sensitivity Hall devices with a relatively small tem perature coefficient. Within the linear region they may be used as multipliers, outside in control and regulating circuits semiconductor material InAs - vapour-deposited
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SV210,
Q64021-S210
Q64021-S230
150mA
V20-f
SV210_
SV230S
V10/B
500mA
Tesla
SV210
TESLA 110
SV230S
SV230
YV20
tesla b 100
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SV110
Abstract: Q64021 TESLA 110 S110S hall TESLA 3D Hall device
Text: SV110 Hall signal probe w ith vapour-deposited layer S V 1 1 0 is a high sensitivity, high internal resistance Hall device for application in control and regulating circuits semiconductor material InSb — vapour-deposited layer . Terminals: Hall voltage red; control current green; wire length 100 mm.
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SV110
SV110
-S110-S2
Q64021
-S110-S3
V20/B
AV20/V20
TESLA 110
S110S
hall
TESLA
3D Hall device
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tangential
Abstract: Tesla Q64003-T21
Text: TC 21 Tangential probe TC 21 is a Hall effect device for measuring the tangential field intensity of magnetic materials semiconductor material InAs . Hall voltage leads: blue tubing; wire length: 120 mm. Control current leads: red tubing; tubing length: 100 mm.
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Q64003-T21
tangential
Tesla
Q64003-T21
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SV130
Abstract: 64021-S130-S3 Q64021-S130-S1 Q64021-S
Text: S V 130 Not for new developm ent Hall signal probe with vapour-deposited layer SV 1 3 0 is a high sensitivity, high internal resistance Hall device, particularly for control and regulating applications semiconductor material InSb — vapour-deposited layer .
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SV130
SV130
Q64021-S130-S1
Q64021-S130-S2
64021-S130-S3
64021-S130-S3
Q64021-S
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Tesla
Abstract: SBV595 Hall 300 Q64099
Text: SBV595 Hall field probe The field probe SBV 595 w ith an epitaxial semiconductor layer of GaAs is particularly suitable for precision measurements of magnetic fields. The cross-shaped Hall chip ensures a particularly small linearization error. •^electrical system
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SBV595
SBV595
Q64099-V595
Tesla
Hall 300
Q64099
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Untitled
Abstract: No abstract text available
Text: CurveTracer CT-3100/3200 For High-Power Semiconductor Device Characterization DATA SHEET Emerging energy standards and increasing power consumption demand additional performance capabilities. As such, pressure has been placed on manufacturers to rapidly design, develop and characterize new power devices to develop innovative chipset designs to provide more eficiency.
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CT-3100/3200
CT-DS-0212
CT3100/3200
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Q64001
Abstract: FA22e EA218 f22e Hall 22e Q64001-F22E Tesla
Text: EA218, FA 22e Insertion probe EA218, Field probe FA22e E A 218 and F A 2 2 e are Hall generators suitable for measuring AC and DC fields semiconductor material InAs . EA 218 Hall voltage leads: red/yellow, control current leads: green/violet (In mounting the top face (seat of electrode) must be insulated)
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EA218,
FA22e
EA218
FA22e
Q64001-E218
Q64001-F22E
Q64001
f22e
Hall 22e
Q64001-F22E
Tesla
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Untitled
Abstract: No abstract text available
Text: Halbleiter-Sensoren Semiconductor Sensors Symbole Begriffe Symbols Terms s M agnetische Induktion B M agnetic induction Fl Linearitätsfehler 'o u t Linearity error Output current O perating current A usgangsstrom Arbeitsstrom , Betriebsgleichstrom A juI !
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65210-L101
65210-D
65210-L100-W
65212-D
65212-L1004
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AN3525
Abstract: magnetic flow meter MAGNETIC METER tesla coil MR2A16A 104Gauss tesla semiconductor
Text: Freescale Semiconductor Application Note AN3525 Rev. 0, 11/2007 Impact of External Magnetic Fields on MRAM Products by: Jason Janesky Freescale Semiconductor Austin, TX 1 Introduction This application note discusses magnetic fields, the sources and magnitudes of magnetic fields, and their
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AN3525
AN3525
magnetic flow meter
MAGNETIC METER
tesla coil
MR2A16A
104Gauss
tesla semiconductor
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ct scanner
Abstract: .01 uf disc capacitor EUROFARAD capacitor datasheet EUROFARAD ceramic capacitor nova* kemet ceramic capacitor SSQ21113 murata Ceramic Disc Capacitors SCR SN 101 hv20 "x-ray generator"
Text: Index Test Requirements . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .4 High Voltage/High Temperature Series . . . . . . . . . . . . . . . . . . . . . .5 High Temperature Ceramic Cases Series C3 . . . . . . . . . . . . . . . .6
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RHY17
Abstract: RHY18 Q61708 tesla semiconductor Hall 300
Text: R H Y17, RHY18 Low-temperature Hall probes RH Y 17 and R H Y 18 are Hall generators for measuring magnetic fields down to —2 6 9 °C. The flat and cylindrical respectively forms are suitable for universal and axial measurements (respectively). They find application in cryology, i.e. super
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RHY17,
RHY18
RHY17
RHY18
Q61708-Y17
Q61708-Y18
OHY18
Q61708
tesla semiconductor
Hall 300
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INDUCTION
Abstract: MAGNETIC METER magnetic transistor Tesla TESLA 1 07960
Text: Magnetic Units Magnetic Induction vs. Magnetic Field Magnetic induction and magnetic field are often used synonymously. In many cases it is easy to conclude from magnetic induction to magnetic field and vice versa. The magnetic field H describes the field generated by a free current only, the magnetic
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RHY10
Abstract: RHY11 APP20 Q61708
Text: R H Y 10, RHY11 Axial field probes RHY 10 and RHY 11 are Hall generators for measuring axiaf magnetic fields in smaller and larger respectively diameter bores (semiconductor material InAs). Hall voltage leads: blue tubing; control current leads: red tubing.
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RHY10,
RHY11
RHY10
Q61708-Y10
Q61708-Y11
RHY11
APP20
Q61708
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Hall Siemens sbv 525
Abstract: K2487 Hall Siemens hall generator siemens hall generator siemens hall probe siemens sbv
Text: 2^ T> • 023SbOS Q01b3?l ô H S I E 6 Field Probe for Measurements in Small Gaps S B V 525 SIEMENS AKTIENGESELLSCHAF - The S B V 525 is a hall generator of InAs semiconductor material designed for measuring magnetic fields in small gaps. S B V 5 25
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023SbOS
Q01b3
4099-V
TCV20
Hall Siemens sbv 525
K2487
Hall Siemens
hall generator
siemens hall generator
siemens hall probe
siemens sbv
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magnetoresistor
Abstract: No abstract text available
Text: SÌE D • flaBSbOS DOlbS'te 1 MSIEfi M agnetoresistor FP 30 D 250 E - SIEMENS AKTIEN6ESELLSCHAF Features 0 ,5 î0 .i -Active area • InSb/NiSb semiconductor CuL 0 0 .0 8 • Flux concentrating iron substrate m • High sensitivity r m
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fl235b05
magnetoresistor
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FC33
Abstract: S290 Q64003-F FC34 Fc-34 FC32
Text: FC 32, FC 33, FC34 Field probes FC 32, FC 33, and FC 34 are designed for high-precision measurements of magnetic fields. Temperature coefficients j8 are minimized semiconductor material InAsP . Type Order number FC 32 FC 33 FC 34 Q 640 03 -F 32 Q 640 03 -F 33
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Q64003-F
Q64003-F34
FC33
S290
FC34
Fc-34
FC32
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we381
Abstract: magneto resistor
Text: Infineon technologies FP 410 L 4 X 80 FM Double Differential Magneto Resistor Dimensions in mm Features Typical Applications • Double differential magneto resistor on same carrier • Accurate intercenter spacing • High operating temperature range • High output voltage
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Q65410-L80E
Q65110-L80F
flE35b05
013437b
we381
magneto resistor
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siemens hall ferrite
Abstract: No abstract text available
Text: SIEMENS Magnetics 1.1 Magnetic units and definitions 1.1.1 Magnetic flux <I> The magnetic flux <1> results as a product of electric voltage and time. The S.l. unit of magnetic flux is the Weber Wb or the Volt-second (Vs). If the magnetic flux <J>changes
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IAO5 Sharp
Abstract: free transistor equivalent book 2sc siemens transistor asy 27 Diode BAY 61 TRANSISTOR BJ 131-6 tesla typ 202 thyristor Tesla z1072 HALL EFFECT 21E z1071
Text: SIEM EN S Semiconductor Manual Discrete Industrial Types 1974 ACY 23, ACY 32 PNP Transistors for AF pre-stages The ACY 23 and ACY 32 are alloyed germanium PNP transistors in the case 1 A 3 DIN 41871 sim. TO -1 . The leads are electrically insulated from the case. The
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Q60103-
thS10
to3530
to4600
to4600
IAO5 Sharp
free transistor equivalent book 2sc
siemens transistor asy 27
Diode BAY 61
TRANSISTOR BJ 131-6
tesla typ 202 thyristor
Tesla
z1072
HALL EFFECT 21E
z1071
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Ferroxcube 3C8
Abstract: U-127 204T250-3C8 Dual secondary Transformer UNITRODE U-124 Unitrode U-127 CURRENT TRANSFORMER Isolated mosfet gate drive circuit Amp. mosfet 1000 watt coupler MOSFET DRIVER application note
Text: U-127 APPLICATION NOTE UNIQUE CHIP PAIR SIMPLIFIES ISOLATED HIGH SIDE SWITCH DRIVE John A. O’Connor Application Engineer Motor Control Circuits Abstract High voltage, high current N-channel MOSFETs, now widely accepted in the industry, have found their way into numerous high power designs. As their cost to performance ratio continually improves, gate drive
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U-127
UC3724/UC3725,
Ferroxcube 3C8
U-127
204T250-3C8
Dual secondary Transformer
UNITRODE U-124
Unitrode U-127
CURRENT TRANSFORMER
Isolated mosfet gate drive circuit
Amp. mosfet 1000 watt
coupler MOSFET DRIVER application note
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SBV579
Abstract: tesla semiconductor
Text: SBV579 Hall field probe The field probe SBV 579 is only suited to measure DC magnetic fields. The Hall chip of cross-shaped design ensures a particularly small linearization error semi conductor material InAs . The electrical system is protected by a coat of varnish.
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SBV579
Q64099-V579
1iO05
SBV579
tesla semiconductor
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SBV566
Abstract: hall generator sbv 566 SBV570
Text: SBV570 Hall signal probe The signal probe SB V 570 serves for contactless signal emission or position indication of magnets. Its design and dimensions are similar to those of SB V 566, however, it does not have a ferromagnetic cover and has no ferromagnetic substrate; i.e. there
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SBV570
Q64099-V570
SBV566
hall generator
sbv 566
SBV570
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