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    Untitled

    Abstract: No abstract text available
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		PDF AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG

    Untitled

    Abstract: No abstract text available
    Text: PRELIMINARY INFORMATION L9D222G72BG3 2.2 Gb, DDR2, 32 M x 72 Integrated Module IMOD Benefits FEATURES DDR2 SDRAM Data Rate = 800,667,533 and 400Mbps Available in INDUSTRIAL, EXTENDED and MIL-TEMP Package: 16mm x 22mm – 208PBGA, 1.00mm pitch Differential Data Strobe (DQS, DQSx\) per byte


    Original     		PDF L9D222G72BG3 400Mbps 208PBGA, LDS-L9D222G72BG3-B

    W3J512M32G

    Abstract: M41K256M32
    Text: W3J512M32G-XBX W3J512M32G T -XB2X W3J512M36/40G(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.5V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:


    Original     		PDF W3J512M32G-XBX W3J512M32G W3J512M36/40G x36/40 M41K256M32

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64K-XPBX W3J512M64K-XLBX *ADVANCED 4GB – 512M x 64 DDR3 SDRAM 1.35V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1,066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64K-XPBX W3J512M64K-XLBX

    M41K256M32

    Abstract: No abstract text available
    Text: W3J512M32K-XBX W3J512M36K T -XB2X W3J512M36/40K(T)-XB3X *PRELIMINARY 2GB – 512M x 32/36/40 DDR3 SDRAM 1.35V – 136/204 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  74% Space savings vs. FBGA  Packages:


    Original     		PDF W3J512M32K-XBX W3J512M36K W3J512M36/40K M41K256M32

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64G-XPBX W3J512M64G-XLBX

    Untitled

    Abstract: No abstract text available
    Text: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M64G-XPBX W3J512M64G-XLBX

    w3j128m72

    Abstract: w3j512m72
    Text: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included


    Original     		PDF W3J512M72G-XPBX W3J512M72G-XLBX 1600Mb/s w3j128m72 w3j512m72

    Untitled

    Abstract: No abstract text available
    Text: W3J128M72K-XLBX W3J128M72K-XPBX *ADVANCED 1GB – 128M x 72 DDR3 SDRAM – 1.35V – 375 PBGA Multi-Chip Package FEATURES BENEFITS  DDR3 Data Rate = 800; 1,066; 1,333; 1,600* Mb/s  35%* Space savings vs. FBGA  Packages:  Reduced part count


    Original     		PDF W3J128M72K-XLBX W3J128M72K-XPBX 1600Mb/s

    Untitled

    Abstract: No abstract text available
    Text: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp


    Original     		PDF AS4DDR232M64PBG 32Mx64 AS4DDR232M64PBG

    MT41K256M8DA

    Abstract: MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K
    Text: Preliminary‡ 2Gb: x4, x8, x16 Automotive DDR3 SDRAM Features Automotive DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 banks MT41J256M8 – 32 Meg x 8 x 8 banks MT41J128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • •


    Original     		PDF MT41J512M4 MT41J256M8 MT41J128M16 09005aef84bd8f53 MT41K256M8DA MT41K256M8DA-125 MT41K MT41K256M8 mt41k256m8da-125-k 96-Ball MT41K256M8DA125K

    MICRON ddr3

    Abstract: A-225 DDR3 1gb dimm
    Text: 2Gb: x4, x8, x16 DDR3 SDRAM Features DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 Banks MT41J256M8 – 32 Meg x 8 x 8 Banks MT41J128M16 – 16 Meg x 16 x 8 Banks Options1 Features • • • • • • • • • • • • • • • • • • Marking


    Original     		PDF MT41J512M4 MT41J256M8 MT41J128M16 09005aef826aaadc MICRON ddr3 A-225 DDR3 1gb dimm

    AS4DDR264M72PBG

    Abstract: AS4DDR232M72APBG
    Text: iPEM 2.4 Gb SDRAM-DDR2 AS4DDR232M72APBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		PDF AS4DDR232M72APBG 32Mx72 AS4DDR264M72PBG AS4DDR232M72APBG

    AS4DDR264M72PBG

    Abstract: H11M1
    Text: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG1 64Mx72 DDR2 SDRAM w/ SHARED CONTROL BUS iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • Proprietary Enchanced Die Stacked iPEM


    Original     		PDF AS4DDR264M72PBG1 64Mx72 dat008 AS4DDR264M72PBG H11M1

    Untitled

    Abstract: No abstract text available
    Text: Preliminary‡ 2Gb: x4, x8, x16 Automotive DDR3 SDRAM Features Automotive DDR3 SDRAM MT41J512M4 – 64 Meg x 4 x 8 banks MT41J256M8 – 32 Meg x 8 x 8 banks MT41J128M16 – 16 Meg x 16 x 8 banks Options1 Features • • • • • • • • • • •


    Original     		PDF MT41J512M4 MT41J256M8 MT41J128M16 78-ball 96-ball 938ps DDR3-2133) 071ns

    Untitled

    Abstract: No abstract text available
    Text: iPEM 4.8 Gb SDRAM-DDR2 AS4DDR264M72PBG 64Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		PDF AS4DDR264M72PBG 64Mx72 AS4DDR264M72PBG

    AS4DDR232M64PBG

    Abstract: No abstract text available
    Text: iPEM 2.1 Gb SDRAM-DDR2 AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit FEATURES BENEFITS DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp Package: • 255 Plastic Ball Grid Array PBGA , 25 x 32mm


    Original     		PDF AS4DDR232M64PBG 32Mx64 AS4DDR232M64PBG

    MT41K64M16

    Abstract: No abstract text available
    Text: 1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 – 128 Meg x 4 x 8 banks MT41K128M8 – 64 Meg x 8 x 8 banks MT41K64M16 – 32 Meg x 16 x 8 banks • TC of 0°C to 95°C – 64ms, 8192-cycle refresh at 0°C to 85°C – 32ms at 85°C to 95°C


    Original     		PDF MT41K256M4 MT41K128M8 MT41K64M16 8192-cycle 09005aef833b7221 MT41K64M16

    Untitled

    Abstract: No abstract text available
    Text: 2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K16M16 – 16 Meg x 16 x 8 banks • • • • Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the


    Original     		PDF MT41K512M4 MT41K256M8 MT41K16M16 78-ball 78-ball 96-ball 09005aef83ed2952

    AS4DDR232M64PBG

    Abstract: No abstract text available
    Text: i PEM 2.1 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M64PBG 32Mx64 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Military Temp


    Original     		PDF AS4DDR232M64PBG 32Mx64 AS4DDR232M64PBG

    AS4DDR232M72PBG

    Abstract: AS4DDR264M72PBG
    Text: i PEM 2.4 G b SDRAM-DDR2 Gb Austin Semiconductor, Inc. AS4DDR232M72PBG 32Mx72 DDR2 SDRAM iNTEGRATED Plastic Encapsulated Microcircuit BENEFITS FEATURES „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ „ DDR2 Data rate = 667, 533, 400 Available in Industrial, Enhanced and Extended Temp


    Original     		PDF AS4DDR232M72PBG 32Mx72 AS4DDR232M72PBG AS4DDR264M72PBG

    Untitled

    Abstract: No abstract text available
    Text: 2Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K512M4 – 64 Meg x 4 x 8 banks MT41K256M8 – 32 Meg x 8 x 8 banks MT41K128M16 – 16 Meg x 16 x 8 banks • • • • Description The 1.35V DDR3L SDRAM device is a low-voltage version of the 1.5V DDR3 SDRAM device. Refer to the


    Original     		PDF MT41K512M4 MT41K256M8 MT41K128M16 78-ball 78-ball 96-ball 14mmy, 09005aef83ed2952

    Untitled

    Abstract: No abstract text available
    Text: W3J512M72G-XPBX PRELIMINARY* 4GB-512M x 72 DDR3 SDRAM FEATURES  23% I/O reduction vs. FBGA  DDR3 Data Rate = 800, 1,066, 1333 Mb/s  Address/control terminations included  Package:  Differential clock terminations included • 543 Plastic Ball Grid Array PBGA , 23 x 32mm


    Original     		PDF W3J512M72G-XPBX 4GB-512M DDR3-1333

    MT41K64M16

    Abstract: No abstract text available
    Text: Preliminary‡ 1Gb: x4, x8, x16 DDR3L SDRAM Description DDR3L SDRAM MT41K256M4 – 128 Meg x 4 x 8 banks MT41K128M8 – 64 Meg x 8 x 8 banks MT41K64M16 – 32 Meg x 16 x 8 banks • Write leveling • Multipurpose register • Output driver calibration Description


    Original     		PDF MT41K256M4 MT41K128M8 MT41K64M16 78-ball 09005aef833b7221 MT41K64M16