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    TERMAL CONTROL Search Results

    TERMAL CONTROL Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    SSM6J808R Toshiba Electronic Devices & Storage Corporation MOSFET, P-ch, -40 V, -7 A, 0.035 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K819R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 10 A, 0.0258 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K809R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 60 V, 6.0 A, 0.036 Ohm@10V, TSOP6F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM6K504NU Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 30 V, 9.0 A, 0.0195 Ohm@10V, UDFN6B, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation
    SSM3K361R Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 100 V, 3.5 A, 0.069 Ohm@10V, SOT-23F, AEC-Q101 Visit Toshiba Electronic Devices & Storage Corporation

    TERMAL CONTROL Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TL431

    Abstract: tl431 sot23 TL431 application note tl431 schematic circuit 2N222 TL431 sot89 431 sot-23 2n222 SOT23 lm7805 htc TL431 An
    Text: PROGRAMMABLE PRECISION SHUNT REGULATOR TL431/A /C TO-92 PKG TOP VIEW 3. CATHODE PROGRAMMABLE PRECISION REFERENCES 2. ANODE The TL431 is three-terminal adjustable shunt regulator with specified termal stability. The output voltage may be set to any value between


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    PDF TL431/A TL431 TL431 tl431 sot23 TL431 application note tl431 schematic circuit 2N222 TL431 sot89 431 sot-23 2n222 SOT23 lm7805 htc TL431 An

    AM30K-I

    Abstract: No abstract text available
    Text: AM30K-I Series • POWER MODULES FOR PCB MOUNTING • SOFT START • TERMAL SHUTDOWN • HIGH EFFICIENCY • REMOTE ON - OFF CONTROL • STANDARD PACKAGE • UVLO / OVLO SHUTDOWN GENERAL DESCRIPTION Our AM30K-I series is a family of cost effective 30W output


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    PDF AM30K-I 64x10 48000mA 12VDC 15VDC 5500mA 5000mA 2500mA

    LC1-D09 installation manual

    Abstract: 3TB44 3UA50 3TF42 3UA52 3TF52 3TB50 LR2-D13 3TB54 overload contactor LR2-D13
    Text: Motor control device 1-1 Termal overload relay JRS3 3RU series thermal relay Applications JRS3(3RU)series thermal relays are suitable for using in the power system with AC 50/60Hz, rated operaton voltage up to 690-1000V, rated operation current from 0.1A to 100A.They are used to protect AC 3 phase


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    PDF 50/60Hz, 90-1000V, IEC60947-4-1 JRS3-12 LC1-D09 installation manual 3TB44 3UA50 3TF42 3UA52 3TF52 3TB50 LR2-D13 3TB54 overload contactor LR2-D13

    2n222 SOT23

    Abstract: 2n222 lm7805 sot23 TL2027 TL431 precision shunt regulator 431 htc lm7805 tl431 htc SHUNT REGULATOR LM317 precision shunt regulator 431 sot23
    Text: PROGRAMMABLE PRECISION SHUNT REGULATOR PROGRAMMABLE PRECISION REFERENCES TL431Z/AZ /CZ TO-92 PKG The TL431Z is three-terminal adjustable shunt regulator with specified termal stability. The output voltage may be set to any value between VREF Approx. 2.5V and 36V with two external resistors.


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    PDF TL431Z/AZ TL431Z OT-23 50PPM/ TL431 TL431 2n222 SOT23 2n222 lm7805 sot23 TL2027 precision shunt regulator 431 htc lm7805 tl431 htc SHUNT REGULATOR LM317 precision shunt regulator 431 sot23

    improves

    Abstract: KF2003-GD10A
    Text: Printheads Compact medium speed thick film thermal printhead 8 dots / mm KF2003-GD10A The KF2003-GD10A is a standard 24 V thick-film thermal printhead with a printing speed of 4 inches / second, developed mainly for label printers. The GD series is of the glazed component type and therefore excellent for termal transfer printing.


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    PDF KF2003-GD10A KF2003-GD10A improves

    improves

    Abstract: KF2004-GD10A
    Text: Printheads Compact medium speed thick film thermal printhead 8 dots / mm KF2004-GD10A The KF2004-GD10A is a standard 24 V thick-film thermal printhead with a printing speed of 4 inches / second, developed mainly for label printers. The GD series is of the glazed component type and therefore excellent for termal transfer printing.


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    PDF KF2004-GD10A KF2004-GD10A improves

    rg45

    Abstract: No abstract text available
    Text: XI’AN IR-PERI Company PRELIMINARY HALF-BRODGE HEXFET A -A -PAK .2%#6 7 HEXFET4Power MOSFET ! VDSS=100V " Features #  RDS on)=0.014Ω $ _ _ _ High frequency DC-DC converters Motor Control Uninterrutible Power Supplies % ID=75A Benefits •


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    PDF 100oC rg45

    620 diode

    Abstract: FP500TF10U
    Text: XI'AN IR-PERI Company FP500TF10U PRELIMINARY “ HALF-BRODGE ” HEXFET Power MOSFET INT-F-PAK Features • • • • • • 3 VDSS=100V Advanced Process Technology Ultra Low On-Resistance 4 5 1 Dynamic dv/dt Rating 175 C Operating Temperature RDS on =0.003Ω


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    PDF FP500TF10U 100oC 125oC 620 diode FP500TF10U

    217 diode

    Abstract: GA50TS120K diode rg2
    Text: PRELIMINARY GA50TS120K ]HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology


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    PDF GA50TS120K 217 diode GA50TS120K diode rg2

    GA200TD120K

    Abstract: DT129
    Text: PRELIMINARY GA200TD120K ]HALF-BRODGE” IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • • • • • • VCES=1200V


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    PDF GA200TD120K GA200TD120K DT129

    RG115

    Abstract: RG-115 GA200DD120K
    Text: PRELIMINARY GA200DD120K ]SINGLE SWITCH” IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology


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    PDF GA200DD120K RG115 RG-115 GA200DD120K

    GA100TS120K

    Abstract: ic tb 1245
    Text: PRELIMINARY GA100TS120K ]HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology


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    PDF GA100TS120K GA100TS120K ic tb 1245

    IBGT

    Abstract: 100V 100A Mosfet DIODE PN junction diode DIODE 6790 MOSFET 50V 100A
    Text: XI’AN IR-PERI Company .2#6 7 PRELIMINARY ]HALF-BRODGE ^ HEXFET Power MOSFET A - A - PAK Features • • • • • • ! Advanced Process Technology Ultra Low On-Resistance #  Dynamic dv/dt Rating 175 C Operating Temperature o Fast Switching VDSS=100V


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    PDF 100oC 125oC IBGT 100V 100A Mosfet DIODE PN junction diode DIODE 6790 MOSFET 50V 100A

    pn 4420

    Abstract: IBGT FP300TS10U 50V 200A ultra fast diode
    Text: XI'AN IR-PERI Company FP300TS10U PRELIMINARY “ HALF-BRODGE ” HEXFET Power MOSFET INT-A -PAK Features • • • • • • 3 VDSS=100V Advanced Process Technology Ultra Low On-Resistance 4 5 1 Dynamic dv/dt Rating 175 C Operating Temperature RDS on =0.005Ω


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    PDF FP300TS10U 100oC 125oC pn 4420 IBGT FP300TS10U 50V 200A ultra fast diode

    ON562

    Abstract: GA400DD120 ga400dd120k
    Text: PRELIMINARY GA400DD120K ]SINGLE SWITCH” IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology


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    PDF GA400DD120K ON562 GA400DD120 ga400dd120k

    GA75TS120K

    Abstract: IC-96A
    Text: PRELIMINARY GA75TS120K ]HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology


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    PDF GA75TS120K GA75TS120K IC-96A

    igbt GATE VOLTAGE FOR 300A ,400V

    Abstract: MF08
    Text: / !6.$7 PRELIMINARY ]HALF-BRODGE” IGBT DOUBLE INT-A -PAK Ultra-FastTM Speed IGBT Features • • • • • • Generation 4 IGBT PT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200


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    PDF MF0805 igbt GATE VOLTAGE FOR 300A ,400V MF08

    GA150TD120K

    Abstract: IC171 termal control RG115
    Text: PRELIMINARY GA150TD120K ]HALF-BRODGE” IGBT DOUBLE INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology


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    PDF GA150TD120K GA150TD120K IC171 termal control RG115

    diode IN 5409

    Abstract: IBGT ic540 GFE 88 DIODE
    Text: PRELIMINARY / &,$7 ]SINGLE SWITCH” IGBT DOUBLE INT-A -PAK Ultra-FastTM Speed IGBT Features • • Generation 4 IGBT technology UltraFast optimized high operating frequencies 8-40 kHz in hard switching, >200


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    PDF 125oC. diode IN 5409 IBGT ic540 GFE 88 DIODE

    MTC70TA120

    Abstract: No abstract text available
    Text:  PRELIMINARY Thyristor Modules Add -A -PAK  MTC70TA120/180 Features _International standard package With DBC ceramic base plate Planar passivated chips High surge capability UL recongnition pending _ _ _ VRRM =1200V- 1800V IFAVM =2x70A IFRMS=2x110A


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    PDF MTC70TA120/180 2x70A 2x110A MTC70TA120

    Untitled

    Abstract: No abstract text available
    Text:  PRELIMINARY Thyristor Modules Add -A -PAK MFC110TA120/180 Features _International standard package With DBC ceramic base plate Planar passivated chips High surge capability UL recongnition pending _ _ _ VRRM =1200V- 1800V IFAVM =2x110A IFRMS=2x180A


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    PDF MFC110TA120/180 2x110A 2x180A

    2X25A

    Abstract: No abstract text available
    Text:  PRELIMINARY Thyristor Modules Add -A -PAK MTC25TA120/180 Features _International standard package With DBC ceramic base plate Planar passivated chips High surge capability UL recongnition pending _ _ _ VRRM =1200V- 1800V IFAVM =2x25A IFRMS=2x40A


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    PDF MTC25TA120/180 2x25A 2x40A 2X25A

    Untitled

    Abstract: No abstract text available
    Text:  PRELIMINARY Thyristor Modules Add -A -PAK MTC40TA120/180 Features _International standard package With DBC ceramic base plate Planar passivated chips High surge capability UL recongnition pending _ _ _ VRRM =1200V- 1800V IFAVM =2x40A IFRMS=2x70A


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    PDF MTC40TA120/180 2x40A 2x70A

    MTC160TS120

    Abstract: No abstract text available
    Text:  PRELIMINARY Thyristor Modules INT -A -PAK MTC160TS120/180 Features _International standard package With DBC ceramic base plate Planar passivated chips High surge capability UL recongnition pending _ _ _ VRRM =1200V- 1800V IFAVM =2x160A IFRMS=2x350A


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    PDF MTC160TS120/180 2x160A 2x350A MTC160TS120