Telefunken u 208 b
Abstract: U208B TELEFUNKEN* U 111 B u111b 146 telefunken telefunken 1007 VS U 208 B u208 triac control 8-pin tea1007
Text: TELEFUNKEN Semiconductors U 208 B / U 208 B–FP Phase Control Circuit – General Triac Control with Retrigger Technology: Bipolar Features D Automatic retriggering D Triggering pulse typ. 125 mA D Voltage and current synchronisation D Internal supply voltage monitoring
|
Original
|
PDF
|
D-74025
Telefunken u 208 b
U208B
TELEFUNKEN* U 111 B
u111b
146 telefunken
telefunken 1007
VS U 208 B
u208
triac control 8-pin
tea1007
|
TRANSISTOR BC 208
Abstract: transistor bc 207 npn transistor bc 209 npn transistor bc 209 b transistor Bu 208 transistor D 2588 transistor BC 209 transistor bc 207 TRANSISTOR BC 208 B 3100U
Text: i l . •.-.— 17E D TELEFUNKEN ELECTRONIC ■ 0 1 2 0 0 ^ 0001451 1 BU 207 * BU 208 • BU 209 TTf Li(FTOKIM electronic C re itM le c h n o to g w s r - 33-07 Silicon NPN Power Transistors Applications: Horizontal deflection circuits in colour TV-receivers
|
OCR Scan
|
PDF
|
r-33-07
T0126
15A3DIN
TRANSISTOR BC 208
transistor bc 207 npn
transistor bc 209 npn
transistor bc 209 b
transistor Bu 208
transistor D 2588
transistor BC 209
transistor bc 207
TRANSISTOR BC 208 B
3100U
|
VQA 23
Abstract: Funkamateur VQA 13 ESBR5501 vqa 33 FUNKAMATEUR - Bauelementeinformation VQA13 esbg5501 CQX51 TLUY5400
Text: FUNKAMATEUR - Bauelementeinformation Vergleichslisten Optoelektronik Uchtemitterdioden Lichtemitterdioden, Durchmesser 5 mm o Farbe WF rot rot rot grün gelb rot grün gelb orange rot grün VQA VQA VOA VQA VQA VQA VQA VQA VQA VQA VQA 10 13 13-1 23 33 16 26
|
OCR Scan
|
PDF
|
LS5160
CQX51
HLMP-33
TLS1541)
SAR55114)
TLR116A3)
TLUR5400
CQY24
HLMP-3000
TLR114A3)
VQA 23
Funkamateur
VQA 13
ESBR5501
vqa 33
FUNKAMATEUR - Bauelementeinformation
VQA13
esbg5501
TLUY5400
|
Untitled
Abstract: No abstract text available
Text: C BYV12.BYV16 TELEFUNKEN Semiconductors Fast Silicon Mesa Rectifiers Features • G lass passivated junction • H erm etically sealed package • Soft recovery characteristic • L ow reverse current Applications Fast rectifier and sw itch for exam ple for T V -lin e
|
OCR Scan
|
PDF
|
BYV12.
BYV16
BYV13
BYV15
BYV16
|
Untitled
Abstract: No abstract text available
Text: Tem ic BYT86/1300 S e m i c o n d u c t o r s Fast Recovery Silicon Power Rectifier Features • Multiple diffusion • Mesa glass passivated • Low switch on power losses • Good soft recovery behaviour • Fast forward recovery time • Fast reverse recovery time
|
OCR Scan
|
PDF
|
BYT86/1300
12-Dec-94
|
GAG1
Abstract: No abstract text available
Text: Tem ic BZT03C S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Medium power voltage regulators and medium power
|
OCR Scan
|
PDF
|
BZT03C
100K/W
12-Dec-94
M9586
GAG1
|
Untitled
Abstract: No abstract text available
Text: Te m ic BZG04. TELEFUNKEN Semiconductors Silicon Transient Voltage Suppressors Features • G lass passivated junction • High reliability • S ta n d -o ff voltage range 8.2V to 430V • E xcellent clam ping cabability • Fast response tim e typ. S ] ps from 0 to
|
OCR Scan
|
PDF
|
BZG04.
|
BAS19-BAS21
Abstract: No abstract text available
Text: _ BAS19-BAS21 Vishay Telefunken Surface Mount Switching Diode Features • Silicon planar epitaxial high speed diode • For switching and general purpose applications Absolute Maximum Ratings Ti = 25°C Parameter Working peak reverse voltage
|
OCR Scan
|
PDF
|
BAS19-BAS21
BAS19
BAS20
BAS21
01-Apr-99
OT-23,
BAS19-BAS21
|
Untitled
Abstract: No abstract text available
Text: Temic BPV10 S e m i c o n d u c t o r s Silicon PIN Photodiode Description BPV 10 is a very high speed and high sensitive PIN photo diode in a standard T - l 3/i plastic package. Due to its w aterclear epoxy the device is sensitive to visible and in frared radiation.
|
OCR Scan
|
PDF
|
BPV10
BPV10
X-950nm
05mW/cmj
ct-96
16-Oct-96
|
Untitled
Abstract: No abstract text available
Text: TeMIC BZW03C. S e m i c o n d u c t o r s Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits
|
OCR Scan
|
PDF
|
BZW03C.
100ns,
12-Dec-94
|
Kjh diode
Abstract: JEDEC 1N4148 Ti-150-C
Text: _ BAV70 Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast switching speed • Electrically identical to standard JEDEC 1N4148 • High conductance • Surface mount package automatic insertion • Common cathode ideally suited for
|
OCR Scan
|
PDF
|
BAV70
1N4148
10mmx8mmx0
17-Mar-99
OT-23
IL-STD-202,
Kjh diode
JEDEC 1N4148
Ti-150-C
|
kje vishay
Abstract: bav99 vishay marking kje
Text: BAV99_ Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast switching speed • High conductance • Surface mount package automatic insertion • Connected in series ideally suited for Absolute Maximum Ratings Tj = 25°C
|
OCR Scan
|
PDF
|
BAV99_
50MHz,
10mmx8mmx0
17-Mar-99
OT-23
IL-STD-202,
kje vishay
bav99 vishay
marking kje
|
Untitled
Abstract: No abstract text available
Text: TELEFUNKEN ELECTRONIC 17E D • a'ïSOtnb QQO'Hl? T ■ AL 66 BZT 03/D.« electronic CrMbve Technologies r -u -is - Silicon Z-Diodes Applications: Medium power voltage regulators, and medium power transient suppression circuits Features: • Glass passivated junctipn
|
OCR Scan
|
PDF
|
fithJAS100
|
U208B
Abstract: phase angle control using IC ic u208b Temic u208b telefunken u208b U208 CIMax telefunken 1007 Open Loop Phase Control circuit Phase Control Circuit
Text: Tem ic U208B S e m i c o n d u c t o r s Open Loop Phase Control Circuit Description The integrated circuit, U 208B , is designed as a phase control circuit in bipolar technology with internal supply-voltage m onitoring. A s the voltage is built up, uncontrolled output pulses are avoided by internal
|
OCR Scan
|
PDF
|
U208B
ay-96
U208B
phase angle control using IC
ic u208b
Temic u208b
telefunken u208b
U208
CIMax
telefunken 1007
Open Loop Phase Control circuit
Phase Control Circuit
|
|
|
Untitled
Abstract: No abstract text available
Text: BZW03C. VISHAY ▼ Vishay Telefunken Silicon Z-Diodes and Transient Voltage Suppressors Features • Glass passivated junction • Hermetically sealed package • Clamping time in picoseconds Applications Voltage regulators and transient suppression circuits
|
OCR Scan
|
PDF
|
BZW03C.
01-Apr
-Apr-99
|
U4311B-C
Abstract: FM receiver CIRCUIT DIAGRAM without ic
Text: Tem ic U4M1B-FS S e m i c o n d u c t o r s Low-Current Superhet Remote-Control Receiver Description The U4311B is a monolithic integrated circuit in bipolar technology for low-current UHF remote control super-heterodyne receivers in amplitude- or frequencymodulated mode. Typical applications are keyless car
|
OCR Scan
|
PDF
|
U4311B
01-Oct-96
U4311B-FS
U4311B-C
U4311B-CFL
U4311B-CFS
DIP16
SS020
SS020
Ol-Oet-96
FM receiver CIRCUIT DIAGRAM without ic
|
ti11w
Abstract: max2500 telefunken service telefunken tubes
Text: Netzröhre fur GW-Heizung indirekt geheizt T E I E E II Serien-oder Parallelspeisung • ■ ■ ■ r U DC-AC-Heating indirectly heated connected in parallel or series II If E AW 59-91 II H IIf c ll Fernseh-Biidröhre ohne lonenfalle TV-picture tube without Ion -Trap
|
OCR Scan
|
PDF
|
|
marking 83
Abstract: BFP183T
Text: Temic BFP183T S e m i c o n d u c t o r s Silicon NPN Planar RF Transistor Electrostatic sensitive device. Observe precautions for handling. ^ Applications For low-noise and high-gain broadband amplifiers at collector currents from 2 mA to 30 mA. Features
|
OCR Scan
|
PDF
|
BFP183T
17-Apr-96
marking 83
BFP183T
|
telefunken ta 750
Abstract: No abstract text available
Text: BZG03C. Vishay Telefunken Silicon Z-Diodes Features • Glass passivated junction • High reliability • Voltage range 10V to 270V • Fits onto 5 mm SMD footpads • Wave and reflow solderable Applications Voltage stabilization Absolute Maximum Ratings
|
OCR Scan
|
PDF
|
BZG03C.
25K/W,
01-Apr-99
telefunken ta 750
|
Untitled
Abstract: No abstract text available
Text: v tS H A Y BAL99 ▼ Vishay Telefunken Surface Mount Switching Diode Features • Fast sw itching speed • Surface m ount package • W ell suited fo r autom ated assem bly process Absolute Maximum Ratings
|
OCR Scan
|
PDF
|
BAL99
D-74025
-Apr-99
|
Kjh diode
Abstract: No abstract text available
Text: vtSHAY _ BAV70 ▼ Vishay Telefunken Dual Surface Mount Switching Diode Features • Fast sw itching speed • Electrically identical to standard JED E C 1N4148 • High conductance • Surface m ount package autom atic insertion
|
OCR Scan
|
PDF
|
BAV70
1N4148
D-74025
17-Mar-99
Kjh diode
|
BAS16 sw sot 23
Abstract: No abstract text available
Text: V ISH A Y ▼ _ BAS16 Vishay Telefunken Silicon Epitaxial Planar Diode Features • Ultra fa st sw itching speed • Surface m ount package ideally suited fo r autom atic insertion • High conductance 94 8550 Absolute Maximum Ratings
|
OCR Scan
|
PDF
|
BAS16
D-74025
01-Apr-99
BAS16 sw sot 23
|
Untitled
Abstract: No abstract text available
Text: Tem ic BZG03C. TELEFUNKEN Semiconductors Silicon Z-Diodes Features • • • • • G lass passivated junction High reliability Voltage range 10V to 270V Fits onto 5 mm SM D footpads W ave and reflow solderable Applications Voltage stabilization Absolute Maximum Ratings
|
OCR Scan
|
PDF
|
BZG03C.
25K/W,
100K/W,
|
Untitled
Abstract: No abstract text available
Text: BAS19-BAS21 msnrn ▼ Vishay Telefunken Surface Mount Switching Diode Features • Silicon planar epitaxial high speed diode • For sw itching and general purpose applications 94 8550 Absolute Maximum Ratings Tj = 2 5 °C P aram eter Test C onditions W orking peak reverse voltage
|
OCR Scan
|
PDF
|
BAS19-BAS21
BAS19
BAS20
BAS21
D-74025
01-Apr-99
|
