kpb 307
Abstract: KP8 500 KP9 1500 -12 KPd 1500 TEG KP5-600 THYRISTOR KP8 800 igbt types 6000v KP7 500 TBA 1240 ic teg thyristor
Text: Contents Powerline IGBT Modules Pulsed Power Thyristors 1200V IGBT Modules Pulsed Power Thyristors Bi-directional switches, choppers, dual switches, half bridges and single switches 2 1700V IGBT Modules Bi-directional switches, choppers, dual switches, half
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DS5766-4.
kpb 307
KP8 500
KP9 1500 -12
KPd 1500 TEG
KP5-600 THYRISTOR
KP8 800
igbt types 6000v
KP7 500
TBA 1240 ic
teg thyristor
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koike relays
Abstract: ed27 smd diode EM 231 WIRING DIAGRAM corona discharge circuit simulation smd transistor marking xy TOSHIBA Thyristor tunnel diode GaAs QFP100 injection molding machine wire diagram position sensitive diode circuit
Text: [ 2 ] Semiconductor Reliability Contents 1. Reliability Concept . 1 1.1 Defining and Quantifying Reliability. 1 1.2 1.3 Reliability and Time. 1
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NS-15,
koike relays
ed27 smd diode
EM 231 WIRING DIAGRAM
corona discharge circuit simulation
smd transistor marking xy
TOSHIBA Thyristor
tunnel diode GaAs
QFP100
injection molding machine wire diagram
position sensitive diode circuit
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ed28 smd diode
Abstract: hv 102 mos fet transistor diagram of high frequency pvc welding machine schematic diagram of electric cookers Ultrasonic Cleaner schematic engel injection machines TEG 2423 40khz ULTRASOUND CLEANER ultrasonic generator 40khz for cleaning schematic of trigger 555 n-mosfet
Text: FAILURE MECHANISMS OF SEMICONDUCTOR DEVICES III. FAILURE MECHANISMS OF SEMICONDUCTOR DEVICES 1. INTRODUCTION 2. FAILURE MECHANISMS AND SCREENING 3. FAILURE MECHANISMS ATTRIBUTED TO WAFER FABRICATION PROCESS 3.1 HOT CARRIER 3.3.1.1 INTRODUCTION 3.3.1.2 HOT CARRIER MECHANISM
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ED-4701-1
C-113:
ed28 smd diode
hv 102 mos fet transistor
diagram of high frequency pvc welding machine
schematic diagram of electric cookers
Ultrasonic Cleaner schematic
engel injection machines
TEG 2423
40khz ULTRASOUND CLEANER
ultrasonic generator 40khz for cleaning
schematic of trigger 555 n-mosfet
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77106
Abstract: CRACK DETECTION PATTERNS HM628128 reliability test data cbv 2 10910 statistical Physics Hitachi DSA00503
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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DATA SHEET OF IC 317
Abstract: Test-Element-Group Thermal Test-Element-Group hitachi ic hitachi HM514256 HM514256 28-pin SOJ SRAM high speed thyristor HM62256 Reliability of Hitachi IC Memories
Text: Reliability of Hitachi IC Memories Contents 1. Structure 2. Reliability 3. Reliability of Semiconductor Devices Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern,
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MCR158
Abstract: 2sa 5200 power amp 2sa 5200 power amp circuits MCR159 mcr 106-3
Text: MCR158 silicon MCR159 INTEGRATED GATE THYRISTORS SILICON CONTROLLED RECTIFIERS IN TEG R A TED GATE TH YR ISTO R S PNPN . . . designed fo r high frequency applications which require high d i/d t such as inverters, choppers, transm itters, induction heaters,
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MCR158
MCR159
MCR158
2sa 5200 power amp
2sa 5200 power amp circuits
MCR159
mcr 106-3
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SG3183N
Abstract: SG3183 SG3183J
Text: SILICON SG3m HIGH-CURRENT NPN TRANSISTOR ARRAYS LINEAR IN TEG R ATED C IR C U ITS DESCRIPTION FEATURES The SG 3183 series of arrays consists of five, closely-matched, high-current NPN transistors. Although sharing a common monolithic substrate, the transistors are connected such that all
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100mA
SG3183
MIL-STD-883
16-PIN
SG3183N
SG3183D
11S61
SG3183N
SG3183
SG3183J
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SHS210
Abstract: SHS361
Text: Beam-lead GaAs Schottky Barrier Diodes Single diodes Absolute maximum ratings Device Application Electrical characteristics Ta = 25 deg. C Vr (V) *F (mA) Tm (teg. C) Vr @ Ir Vr (V) IB <UA) Ct Vf @ If Vf (V) If (mA) Ct (pF) @ » f H« @ If Rs (Q) If (mA)
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SBL-12Ì
SBL-801«
SBL-802*
SBL-803®
SBL-804»
SBL-221®
SHS264
SHS311
SHS320
SHS330
SHS210
SHS361
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teg thyristor
Abstract: M54120P
Text: M ITSUBISHI BIPOLAR DIGITAL ICs M5412GP MITSUBISHI DGTL LOGIC 31E » I H b E M T ñ E ? 0G1437fl b B M I T 3 LEVEL DETECTOR WITH DELAY CIRCUIT 1 ^ DESCRIPTION M 5 4 1 2 0 P is a sem iconductor in teg rated circuit with func PIN CONFIGURATION (TOP VIEW)
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M5412GP
0G1437fl
teg thyristor
M54120P
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power inverter
Abstract: symmetrical gate commutated thyristor press pack thyristor CS 15 thyristor GATE TURN OFF THYRISTOR 400 V 100 A thyristor cs 52 gct thyristor sinewave inverter circuit Power Thyristor 1500A GCT mitsubishi
Text: MITSUBISHI GCT Gate Commutated TurirofÖ THYRISTOR FGC1500B-130DS HIGH POWER INVERTER USE PRESS PACK TYPE FGC1500B-130DS •Symmetrical GCT Thyristor •I tqrm Repetitive controllable on state current. 1500A •I t(av :Aver age on-state cu rren t. 500A
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FGC1500B-130DS
125deg
TSH-384
power inverter
symmetrical gate commutated thyristor
press pack thyristor
CS 15 thyristor
GATE TURN OFF THYRISTOR 400 V 100 A
thyristor cs 52
gct thyristor
sinewave inverter circuit
Power Thyristor 1500A
GCT mitsubishi
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bd7995
Abstract: P8243 178M15 transistor b492 TRANSISTOR BJ 131-6 P8035 sk 7443 1334 diode LM1456 LM 8361
Text: H F To X 8366IT U N E B Issue 2/8534 STR910A B26000 2000 General Wiring Diagram Figure 10.1 +28 V sense) GROUND Meter Batt. sense + Sense Isolated Ground Batt. GND O FF 28 V O FF (T X O F F ) Relays K4, K1 & K2 BATT. MODE »DC» Relays K5, K6 +8 V in GROUND
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8366IT
STR910A
B26000
B26050
B2G010
B26010
B2701D
9SM102/V4T7
bd7995
P8243
178M15
transistor b492
TRANSISTOR BJ 131-6
P8035
sk 7443
1334 diode
LM1456
LM 8361
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HIGH VOLTAGE THYRISTOR
Abstract: GCT mitsubishi HIGH POWER INVERTER press pack thyristor 10000 VDRM high voltage GCT gct thyristor sinewave inverter FGC4000BX-90DS power inverter press pack thyristor
Text: MITSUBISHI GCT Gate Commutated TurirofO THYRISTOR FGC4000BX-90DS HIGH POW ER IN VERTER U S E PR E SS PACK TYPE •A sym m etrical GCT Thyristor • I t q r m ^Repetitive controllable on sta te current 4000A • I t (av A verage on-state current 1200A • V drm -'Repetitive peak off state v o lt a g e
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FGC4000BX-90DS
TSH-377
HIGH VOLTAGE THYRISTOR
GCT mitsubishi
HIGH POWER INVERTER
press pack thyristor 10000 VDRM
high voltage GCT
gct thyristor
sinewave inverter
FGC4000BX-90DS
power inverter
press pack thyristor
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BT thyristor
Abstract: teg thyristor thyristor bt 13 thyristor BT thyristor bt 13 g
Text: Contents Page G eneral A lphanum erical Index 4 Sym bols and Term s 8 IG B Ts IGBT 1 1 ,1 5 IGBT with D iode 1 1 ,1 5 IG BT B IM O S FE T 12 IG BT M odules 13 ISOSMART IG BT M odules 14 P o w er M O S FE Ts H iP erFE T 17 S tandard M O SFET 20 M O S FE T M odules
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transistor tester
Abstract: Polymer Aluminum Capacitor CS 213 Polymer protection ph meter Hitachi die attach film digital microammeter
Text: Reliability 1. Reliability 1.1 Reliability Characteristics for Semiconductor Devices H ita ch i se m ic o n d u c to r d e v ic e s are d e sig n e d , manufactured and inspected so as to achieve a high level o f reliability. Accordingly, system reliability
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CA3062
Abstract: a3081 CA3081 A3082
Text: 23 C A 3081 CA3082 HARRIS General-Purpose High-Current N-P-N T ransistor Arrays August 1991 Features D escription • C A 3 0 8 1 - C o m m o n -E m itte r A rray C A3081 and C A 3 0 8 2 c o n s is t o f seven h ig h -c u rre n t to 100m A silicon n - p - n tra n sisto rs on a com m on m onolithic
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CA3082
A3081
are100
A308I
CA3062
CA3081
A3082
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IR 2110
Abstract: No abstract text available
Text: 1111 B g g I n t e r n a t io n a l R e c t i f i e r Literature from IR ANNUAL REPORT 1995 A nnual R eport DATABOOKS D iodes, T h y risto rs P roduct S pecifications D iscrete H igh P o w er S em iconductors G overnm ent and Space P roducts D e sig n e r’s
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PSPICE thyristor
Abstract: GTO thyristor press-pack igbt GTO thyristor WESTCODE dc to dc chopper by thyristor McMurray pwm thyristor dc motor GTO Gate Drivers ceramic disc capacitors stacks G1000LL250
Text: E 1 2004 POWER ELECTRONICS . t f P L ^ ir iO N FOCUS TRACTION PAGE 28 ress-Pack IGBTs for Traction Applications OWER SO 0Ä Y DESIGN CONTENTS POWER ELECTRONICS PAGE 6 Market News Editor A chim S c h a rt P E E lo ok s at th e latest M arket new s an d com pany developm ents.
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0780pany
IS09000
PSPICE thyristor
GTO thyristor
press-pack igbt
GTO thyristor WESTCODE
dc to dc chopper by thyristor
McMurray
pwm thyristor dc motor
GTO Gate Drivers
ceramic disc capacitors stacks
G1000LL250
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MA1040
Abstract: ma1050 1SS202
Text: 1 Introduction We at Shindengen have devoted much time and This manual is meant to give the user a fuller energy to produce the MAI 000 Series of Power understanding of the functions of the MAI 000 Modules Series for switching power supplies. This its electric
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62256 hitachi
Abstract: 28 pin plastic dip hitachi dimension hitachi PLC
Text: Reliability of Hitachi 1C Memories 1. Structure The dies of IC memories are encapsulated in various packages. The most common packages are plastic and cerdip. Plastic packages are widely used in many different types of equipment. Cerdip packaging is especially suitable in equipment
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CBV2
Abstract: hitachi ic thyristor TT 570 N Reliability of Hitachi IC Memories
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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CBV2
Abstract: HN27C301
Text: Reliability of Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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flash 32 Pin PLCC 16mbit
Abstract: 398x
Text: Reliability o f Hitachi IC Memories 1. Structure IC memory devices are classified as NMOS type, CMOS type, and Bi-CMOS type. There are advantages to it's circuit design, layout pattern, degree of integration, and manufacturing process. All Hitachi memories are produced using standardized design, manufacturing, and inspection techniques.
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HN613256P
Abstract: HN27C301 1S00G CRACK DETECTION PATTERNS HN27256
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. ST RU CTU RE 1C memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memo ries is high speed but small capacity, instead, MOS
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27c301
Abstract: HM6788P-25 HM6788
Text: • RELIABILITY OF HITACHI 1C MEMORIES 1. S TR U C TU R E IC memories are basically classified into bipolar type and MOS type and utilized effectively by their characteristics. The characteristic of bipolar memories is high speed but small capacity, instead, MOS memories have large capacity.
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