Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TECHNO Search Results

    SF Impression Pixel

    TECHNO Price and Stock

    VISATON GmbH & Co KG LOUDSPEAKER-TECHNOLOGY-HANDBOOK

    HANDBOOK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey LOUDSPEAKER-TECHNOLOGY-HANDBOOK Bulk 10
    • 1 -
    • 10 $13.321
    • 100 $13.321
    • 1000 $13.321
    • 10000 $13.321
    		Buy Now

    3M Interconnect 3M IDC TECHNOLOGY SOLUTIONS

    3M IDC TECHNOLOGY SOLUTIONS SAMPLE KIT - Bulk (Alt: 3M IDC TECHNOLOGY SOLUTIONS)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas 3M IDC TECHNOLOGY SOLUTIONS Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Get Quote

    Raytech TECHNO GEL GUM

    Potting Compound, Bottle, 1Lt, Blue; Potting Compound Type:Polymeric Gel; Dispensing Method:Bottle; Compound Colour:Blue; Weight:-; Product Range:-; Svhc:No Svhc (27-Jun-2018); Volume:1L Rohs Compliant: Yes |Raytech TECHNO GEL GUM
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TECHNO GEL GUM Bulk 45 1
    • 1 $72.32
    • 10 $72.32
    • 100 $63.21
    • 1000 $61.39
    • 10000 $61.39
    		Buy Now

    Advantech Co Ltd PPC-BTO-TECHNO

    Custom Computer Configured (Reference Quote Number From Advantech On Order) |Advantech PPC-BTO-TECHNO
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark PPC-BTO-TECHNO Bulk 1
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 -
    		Buy Now

    Phoenix Contact PLCNEXT TECHNOLOGY STARTER

    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Onlinecomponents.com PLCNEXT TECHNOLOGY STARTER 46
    • 1 $719.18
    • 10 $681.82
    • 100 $681.82
    • 1000 $681.82
    • 10000 $681.82
    		Buy Now
    Master Electronics PLCNEXT TECHNOLOGY STARTER
    • 1 $719.18
    • 10 $681.82
    • 100 $681.82
    • 1000 $681.82
    • 10000 $681.82
    		Buy Now
    Find more TECHNO price and stock on Findchips.com

    TECHNO Datasheets (13)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    MC9S12C32 Technological Arts Circuit Diagram and Pinout Original PDF
    MCK240 Technosoft TMS320F240 DSP Motion Control Kit Original PDF
    Technology Background Advanced Micro Devices 1.8 Volt-only Flash Memory Technology Original PDF
    Technology Background Advanced Micro Devices AMD DL 160 and DL320 Series Flash: New Densities, New Features Original PDF
    Technology Background Advanced Micro Devices 3.0 Volt-only Page Mode Flash Memory Technology Original PDF
    Technology Background Advanced Micro Devices 3.0 Volt-only Flash Memory Technology Original PDF
    Technology Background Advanced Micro Devices 3.0 Volt-only Burst Mode Flash Memory Technology Original PDF
    Technology Background Advanced Micro Devices Data Management Software (DMS) for AMD Simultaneous Read-Write Flash Memory Devices Original PDF
    TL-KLM108 Technoland 1U-15inch LCD keyboard/Trackball Original PDF
    TP75-12S05 Techno-Projekt 37 TO 75 WATT WIDE INPUT DC/DC-CONVERTER Original PDF
    TP75-12S12 Techno-Projekt 37 TO 75 WATT WIDE INPUT DC/DC-CONVERTER Original PDF
    TP75-12S2.5 Techno-Projekt 37 TO 75 WATT WIDE INPUT DC/DC-CONVERTER Original PDF
    TP75-12S3.3 Techno-Projekt 37 TO 75 WATT WIDE INPUT DC/DC-CONVERTER Original PDF

    TECHNO Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    74ALS05

    Abstract: diode sy 106 diode sy 180 10
    Text: TOSHIBA TENTATIVE TC74VHC05F/FN/FT TO SH IBA C M O S DIGITAL INTEGRATED CIRCUIT SILICON M O N O LITH IC TC74VHC05F, TC74VHC05FN, TC74VHC05FT HEX INVERTER OPEN DRAIN _ The TC74VHC05 is an advanced high speed CMOS INVERTER fabricated with silicon gate C2MOS technology.


    OCR Scan     		TC74VHC05F/FN/FT TC74VHC05F, TC74VHC05FN, TC74VHC05FT TC74VHC05 TC74VHC04, 74ALS05 diode sy 106 diode sy 180 10 PDF

    FN521

    Abstract: FN 521 UFN522 UFN523 UFN520
    Text: POWER MOSFET TRANSISTORS UFN520 100 Volt, 0.3 Ohm N-Channel UFN522 UFN523 DESCRIPTION The U nitrode power M O SFET desig n u tilizes the m ost a dvan ced technology available. This efficient design a ch ieves a very low Rosiom an d a high tran scon d u ctan ce.


    OCR Scan     		UFN520 UFN522 UFN523 UFN520 UFN521 UFN522 FN521 FN 521 UFN523 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC55417P/J —15H. TC55417P/J-20H TC55417P/J—25H. TC55417P/J-35H • * 16,384 W O R D x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55417P/J—H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 - volt supply.


    OCR Scan     		TC55417P/J --15H. TC55417P/J-20H TC55417P/J--25H. TC55417P/J-35H TC55417P/J-- 120mA 100mA TC55417P/J--H PDF

    A9RV

    Abstract: 5s a315 A327
    Text: TOSHIBA TC514900AJLL-70/80 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynamic RAM organized 524,288 word by 9 bit. The TC514900AJLL utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit


    OCR Scan     		TC514900AJLL-70/80 TC514900AJLL TC514900AJLI/70/80 TC514900AJLL70/80 A9RV 5s a315 A327 PDF

    UFNF430

    Abstract: diode ed 2437 UFNF432
    Text: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.


    OCR Scan     		UFNF430 UFNF431 UFNF432 UFNF433 UFNF430 diode ed 2437 UFNF432 PDF

    74LS27 truth table

    Abstract: No abstract text available
    Text: TOSHIBA TC74HC27AP/AF/AFN TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC27AP, TC74HC27AF, TC74HC27AFN Note The JEDEC SOP (FN) is not available in Japan. TRIPLE 3 -IN P U T NOR GATE The TC74HC27A is a high speed CMOS 3-INPUT NOR GATE fabricated with silicon gate C2MOS technology.


    OCR Scan     		TC74HC27AP/AF/AFN TC74HC27AP, TC74HC27AF, TC74HC27AFN TC74HC27A 14PIN DIP14-P-300-2 14PIN 200mil 74LS27 truth table PDF

    TC74HC113

    Abstract: No abstract text available
    Text: TC74HC113P/F TC74HC113 P /F DUAL J - K F L IP FLOP WITH CLEAR The TC74HC113 is a high speed CMOS DUAL J—K FLIP FLOP fabricated with silicon gate C 2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintain­ ing the CMOS low power dissipation.


    OCR Scan     		TC74HC113P/F TC74HC113 PDF

    TC74HC4022

    Abstract: TC74HC4022P
    Text: TC74HC4022P/F TC74HC4022P/F OCTAL COUNTER/DIVIDER The TC74HC4022 is a high speed CMOS OCTAL COUNTER/DIVIDER fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent LSTTL while maintaining the CMOS low power dissipation.


    OCR Scan     		TC74HC4022P/F TC74HC4022P/TC74HC4022F TC74HC4022 TC74HC4022P PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74HC4514AP TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74HC4514AP 4 -TO - 16 LINE DECODER/LATCH The TC74HC4514A are high speed CMOS 4 - LINE TO 16 LINE DECODER WITH LATCHED INPUTs fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


    OCR Scan     		TC74HC4514AP TC74HC4514A 24PIN DIP24-P-300-2 PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74HC77AP/AF 4 -B IT D TYPE LATCH The TC74HC77A is a high speed CMOS 4-B IT D -T Y P E LATCH fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power dissiparion.


    OCR Scan     		TC74HC77AP/AF TC74HC77A TC74HC77AP/AF-3 TC74HC77AP/AF-4 PDF

    260-pin

    Abstract: No abstract text available
    Text: TOSHIBA TC55V1864J/FT-10/12/15 PRELIMINARY SILICON GATE CMOS 65,536 WORD x 18 BIT CMOS STATIC RAM Description TheTC55V1864J/FT is a 1,179,648 bit high speed CMOS static random access memory organized as 65,536 words by 18 bits and operated from a single 3.3V : upply. Toshiba’s advanced CMOS technology and circuit design enable high speed operation.


    OCR Scan     		TC55V1864J/FT-10/12/15 TheTC55V1864J/FT TC55V1864J/FT TC55V1864J/ B-143 260-pin PDF

    4A04I

    Abstract: tc514100a
    Text: TC51441OAP/AJ/ASJ/AZ—70, TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 PRELIMINARY 1,048,576 W ORD x 4 BIT DYNAMIC RAM DESCRIPTION The TC51441 OAP/AJ/ASJ/AZ is the new generation dynamic RAM organized 1,048,576 words by 4 bits. The TC514410AP/AJ/ASJ/AZ utilizes TOSHIBA’S CMOS Silicon gate process technology as well as


    OCR Scan     		TC51441OAP/AJ/ASJ/AZ-- TC51441OAP/AJ/ASJ/AZ-80 TC51441OAP/AJ/ASJ/AZ-10 TC51441 TC514410AP/AJ/ASJ/AZ 350mil) TC514100AP/AJ/ASJ/AZ. TC5141OOAP/AJ/ASJ/AZ-60 4A04I tc514100a PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74LVQ573F/FW/FS OCTAL D-TYPE LATCH WITH 3-STATE OUTPUT The TC74LVQ573 is a high speed CMOS OCTAL LATCH w ith 3-STATE OUTPUT fabricated w ith silicon gate and double-layer metal w iring C2MOS technology. Designed fo r use in 3.3 Volt systems, it achieves high


    OCR Scan     		TC74LVQ573F/FW/FS TC74LVQ573 PDF

    TC74HC30A

    Abstract: No abstract text available
    Text: TC74HC30AP/AF/AFN 8 - I N P U T NAND GATE The TC74HC30A is a high speed CMOS 8-IN P U T NAND GATE fabricated with silicon gate C 2 MOS technology. It achieves the high speed operation sim ilar to equivalent L ST T L while maintaining the CMOS low power dissipation.


    OCR Scan     		TC74HC30AP/AF/AFN TC74HC30A \iL285i HC-173 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74LVX4245FS Dual Supply Octal B u s Transceiver The TC74LVX4245 is a dual supply, advanced high speed C M O S O CTAL B U S T R A N SC E IV E R fabricated with silicon gate C M O S technology. Designed for use as an interface between a 5V bus and a


    OCR Scan     		TC74LVX4245FS TC74LVX4245 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC7WH74FU TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC7WH74FU D-TYPE FLIP FLOP WITH PRESET AND CLEAR The TC7WH74FU is an advanced high speed CMOS D-FLIP FLOP fabricated with silicon gate CMOS technology. It achieves the high speed operation similar to equivalent


    OCR Scan     		TC7WH74FU TC7WH74FU PDF

    BE423

    Abstract: No abstract text available
    Text: TOSHIBA TC5118325BJ/BFT-70 PRELIMINARY 524,288 WORD X 32 BIT EDO DYNAMIC RAM Description The TC5118325BJ/BFT is the Hyper Page Mode (EDO) dynamic RAM organized 524,288 words by 32 bits. The TC5118325BJ/BFT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to pro­


    OCR Scan     		TC5118325BJ/BFT-70 TC5118325BJ/BFT TC5118325BJ/ 400mil) I/024 I/025 I/032 BE423 PDF

    TC514170BJ-80

    Abstract: tc514170 TC514170BJ80
    Text: TOSHIBA TC514170BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514170BJ is the new generation dynam ic RAM organized 262,144 word by 16 bit. The TC514170BJ utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		TC514170BJ-70/80 TC514170BJ TC514170BJ-80 tc514170 TC514170BJ80 PDF

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC 74HC 133AP/AF TO SHIBA CM OS D IG ITAL INTEGRATED CIRCUIT SILICON M ONOLITHIC TC74HC133AP, TC74HC133AF 1 3 -IN P U T NAND GATE The TC74HC133A is a high speed CMOS 13-INPUT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent


    OCR Scan     		133AP/AF TC74HC133AP, TC74HC133AF TC74HC133A 13-INPUT 16PIN DIP16-P-300-2 16PIN 200mil PDF

    ufn440

    Abstract: UFN441
    Text: POWER MOSFET TRANSISTORS UFN440 UFN441 UFN442 UFN443 500 Volt, 0.85 Ohm N-Channel FEA TU RES D ESCRIPTIO N • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low R dscow and a high transconductance.


    OCR Scan     		UFN440 UFN441 UFN442 UFN443 UFN441 UFN442 PDF

    TC5117800bnt-60

    Abstract: TC5117800B
    Text: TOSHIBA TC5117800BNJ/BNT-60/70 PRELIMINARY 2,097,152 WORD X 8 BIT FAST PAGE DYNAMIC RAM Description The TC5117800BNT is the fast page dynamic RAM organized 2,097,152 words by 8 bits. The TC5117800BNT utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating margins,


    OCR Scan     		TC5117800BNJ/BNT-60/70 TC5117800BNT TC5117800bnt-60 TC5117800B PDF

    UFN432

    Abstract: mosfet UFN432 UFN 432 UFN431 UFN433
    Text: POWER MOSFET TRANSISTORS 500 Volt, 1.5 Ohm N-Channel UFN430 UFN431 UFN432 UFN433 FEATURES DESCRIPTION • • • • • The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rosiom and a high transconductance.


    OCR Scan     		UFN430 UFN431 UFN432 UFN433 UFN430 UFN431 UFN432 mosfet UFN432 UFN 432 UFN433 PDF

    IC 4511B pin

    Abstract: 7 SEGMENT LETTER DISPLAY COMMON CATHODE tlr332 TLR-332 TC74HC4511P
    Text: TC74HC4511P/F TC74HC4511P/F BCD-TO-7 SEGMENT LATCH/DECODER/DRIVER The TC74HC4511 is a high speed CMOS BCD-TO-7 SEGMENT LATCH/DECODER/DRIVER fablicated with silicon gate C2MOS technology. It enables high speed latch and decode operation with identical pin connection and function to standard CMOS 4511B.


    OCR Scan     		TC74HC4511P/F TC74HC4511P/F TC74HC4511 4511B. TLR358 TLR362 TLR332 TLR342 IC 4511B pin 7 SEGMENT LETTER DISPLAY COMMON CATHODE TLR-332 TC74HC4511P PDF

    Untitled

    Abstract: No abstract text available
    Text: TC74HC4072AP/AF D U A L 4 - I N P U T OR G A TE The TC74HC4072A is a high speed CMOS 4-IN P U T OR GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation sim ilar to equivalent LSTTL while m aintaining the CMOS low power dissipation.


    OCR Scan     		TC74HC4072AP/AF TC74HC4072A HC-732 PDF