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Text: TOSHIBA -CDISCRETE/OPTOD- TD 9097250 TOSHIBA DISCRETE/OPTO T O S H IB A T0T7SSD DDltiDSS 0 90D 16022 SEMICONDUCTOR DT"33 '35 TOSHIBA GTR MODULE MG100G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.
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MG100G2YL1
G100H
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Untitled
Abstract: No abstract text available
Text: 4SE D • =10=17 250 001775b IT O S H S TO S H IB A TR A N S IS TO R 2N4125 SILICO N P N P E P IT A X IA L T Y P E PC T P R O C ES S TOSHIBA (DISCRETE/OPTO) FOR GENERAL PURPOSE USE SWITCHING AND AMPLIFIER APPLICATIONS. . Low Leakage Current * I C B O = - 5 0 n A ( M a x .)
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001775b
2N4125
-50mA,
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {D IS CR ETE/OPTO } 909 7 25 0 TOSHIBA DISCRETE/OPTO TO SH IBA 90D SEM ICONDUCTOR 16179 D T - 2 , 3 '5 7 TOSHIBA GTR MODULE MG 1 0 0 N 2 Y S 1 TECHNICAL DATA SILICON N CHANNEL IGBT HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. . High Input Impedance
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MG100N2YS1
HG100N2YS1-5
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Untitled
Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO} TT 9097250 TOSHIBA DISCRETE/OPTO dF I ^ D T T E S D OOlbßMG O f * D 'T S R - il 99D 16840 TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR Y T F 5 3 2 SILICON N CHANNEL MOS TYPE TECHNICAL DATA (ff-MOS I) INDUSTRIAL APPLICATIONS Unit in mra
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500nA
250yA
250ijA
00A/us
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Abstract: No abstract text available
Text: TOSHIBA {DISCRETE/OPTO}- TT 9097250 TOSHIBA CDISCRETE/OPTO TOSHIBA dF | t O T 75SG GDlbTSS T TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 99D 1 6 7 5 5 2 S IC 7 9 0 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-M0SI) T “ 3 <? “ I• •INDUSTRIAL APPLICATIONS
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300uA
EGA-2SK790-A
EGA-2SK790-5
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Untitled
Abstract: No abstract text available
Text: TOSHIBA O I S C R E T E / O P T O } ^ 9097250 TOSHIBA CDISCRETE/OPTO ¿jashih SEMICONDUCTOR DE I t O T T S S G O D l b b b S 99D 16665 ^~T- 3ci-J3 TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 3 8 7 SILICON N CHANNEL MOS TYPE 7 T - M 0 S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS
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-100nA
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