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Catalog Datasheet	MFG & Type	PDF	Document Tags
Untitled Abstract: No abstract text available Text: Datasheet P-Channel Enhancement Mode Power MOSFET TDM4953 DESCRIPTION D1 D2 The TDM4953 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 4.5V. This device is suitable for use as a	Original	PDF	TDM4953 TDM4953

Catalog Datasheet

MFG & Type

PDF

Document Tags

Untitled

Abstract: No abstract text available
Text: Datasheet P-Channel Enhancement Mode Power MOSFET TDM4953 DESCRIPTION D1 D2 The TDM4953 uses advanced trench technology to provide excellent RDS ON , low gate charge and operation with gate G2 G1 voltages as low as 4.5V. This device is suitable for use as a

Original

PDF

TDM4953 TDM4953