tdk ceramic resonator
Abstract: No abstract text available
Text: 73M2901CL V.22bis Single Chip Modem TDK SEMICONDUCTOR CORP. February 2002 DESCRIPTION FEATURES The 73M2901CL is a single-chip modem that combines all the controller DTE and data pump functions necessary to implement an intelligent V.22bis data modem.
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73M2901CL
22bis
tdk ceramic resonator
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73M2901
Abstract: P3100EA70 S-8580 73M2901CLIGT 73M2901C 73M2901CL CTR21 FCC68 S104 USR20
Text: 73M2901CL V.22bis Single Chip Modem TDK SEMICONDUCTOR CORP. May 2002 DESCRIPTION FEATURES The 73M2901CL is a single-chip modem that combines all the controller DTE and data pump functions necessary to implement an intelligent V.22bis data modem. • •
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73M2901CL
22bis
73M2901CL
73M2901
P3100EA70
S-8580
73M2901CLIGT
73M2901C
CTR21
FCC68
S104
USR20
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power supply ATX12v SCHEMATICS
Abstract: n82802ac8 2100C888 transistor b1099 intel 845g chipset motherboard layout b1099 power supply ATX12v SERVICE MANUAL MBT3904DUAL pc motherboard schematics intel 82801db ich4 intel 82845g chipset motherboard layout
Text: Intel 845GV Scalable Performance Board Development Kit User’s Manual February 2003 Order Number: 273830-001 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL® PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS PROVIDED IN
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845GV
UDMA100
power supply ATX12v SCHEMATICS
n82802ac8
2100C888
transistor b1099
intel 845g chipset motherboard layout
b1099
power supply ATX12v SERVICE MANUAL
MBT3904DUAL
pc motherboard schematics intel 82801db ich4
intel 82845g chipset motherboard layout
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TDK L7H
Abstract: ntc 470-15 tdk pc50 cxa 8004 TDK EI PC40 70010 FB CFGA6 VLC6045 TDK GBDriver RB4 smd ra6
Text: RoHS指令対応：EU Directive 2002/95/ECにもとづき免除された用途を除いて、鉛、カドミウム、水銀、六価クロム、 および特定臭素系難燃剤のPBB、PBDEを使用していないことを表します。 February/2010
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2002/95/EC
February/2010
AVJ-004E
2002/95/ECPBBPBDE
MMZ0402
MMZ1005
MMZ1005-E
MMZ1608
MMZ2012
MPZ1005
TDK L7H
ntc 470-15
tdk pc50
cxa 8004
TDK EI PC40
70010 FB
CFGA6
VLC6045
TDK GBDriver RB4
smd ra6
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BA2rc
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118
288M-BIT
PD48288118
BA2rc
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118
288M-BIT
PD48288118
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Untitled
Abstract: No abstract text available
Text: Datasheet PD48288118-A 288M-BIT Low Latency DRAM Separate I/O R10DS0157EJ0100 Rev.1.00 Feb 01, 2013 Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118-A
288M-BIT
R10DS0157EJ0100
PD48288118-A
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118 is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118
288M-BIT
PD48288118
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p144f
Abstract: TDK EF25 BAP36 PD482
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288118-A 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288118-A is a 16,777,216 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288118-A
288M-BIT
PD48288118-A
M8E0904E
p144f
TDK EF25
BAP36
PD482
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Untitled
Abstract: No abstract text available
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M8E0904E
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PD48288236FF-EF25-DW1-A
Abstract: PD482
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209-A, 48288218-A, 48288236-A 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209-A is a 33,554,432-word by 9 bit, the μPD48288218-A is a 16,777,216 word by 18 bit and the μPD48288236-A is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced
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PD48288209-A,
8288218-A,
8288236-A
288M-BIT
PD48288209-A
432-word
PD48288218-A
PD48288236-A
PD48288236FF-EF25-DW1-A
PD482
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PD48288236FF-EF25-DW1-A
Abstract: 4828
Text: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid
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M8E0904E
PD48288236FF-EF25-DW1-A
4828
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology
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PD48288209,
288M-BIT
PD48288209
432-word
PD48288218
PD48288236
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology
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PD48288209,
288M-BIT
PD48288209
432-word
PD48288218
PD48288236
PD48288236
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Untitled
Abstract: No abstract text available
Text: DATA SHEET MOS INTEGRATED CIRCUIT PD48288209, 48288218, 48288236 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209 is a 33,554,432-word by 9 bit, the μPD48288218 is a 16,777,216 word by 18 bit and the μPD48288236 is a 8,388,608 word by 36 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology
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PD48288209,
288M-BIT
PD48288209
432-word
PD48288218
PD48288236
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12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM
Abstract: IRS2052M
Text: IRAUDAMP10 300W x 2 Channel Class D Audio Power Amplifier Using the IRS2052M and IRF6775 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP10 Demo board;
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IRAUDAMP10
IRS2052M
IRF6775
IRAUDAMP10
12v 300W AUDIO AMPLIFIER CIRCUIT DIAGRAM
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SCHEMATIC 300w power amplifier stereo
Abstract: 300w mosfet audio amplifier circuit diagram 300w audio amplifier circuit diagram DSR3241
Text: IRAUDAMP10 300W x 2 Channel Class D Audio Power Amplifier Using the IRS2052M and IRF6775 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP10 Demo board;
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IRAUDAMP10
IRS2052M
IRF6775
IRAUDAMP10
SCHEMATIC 300w power amplifier stereo
300w mosfet audio amplifier circuit diagram
300w audio amplifier circuit diagram
DSR3241
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smd diode r6a
Abstract: No abstract text available
Text: IRAUDAMP11 120W x 3 Channel Class D Audio Power Amplifier Using the IRS2053M and IRF6665 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP11 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP11
IRS2053M
IRF6665
IRAUDAMP11
smd diode r6a
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Untitled
Abstract: No abstract text available
Text: IRAUDAMP11 120W x 3 Channel Class D Audio Power Amplifier Using the IRS2053M and IRF6665 By Jun Honda, Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP11 Demo board; • Always wear safety glasses whenever operating Demo Board
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IRAUDAMP11
IRS2053M
IRF6665
IRAUDAMP11
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F37Z
Abstract: X1800 hspice MT49H16M36 533401 MT49H16M36
Text: Advance‡ 576Mb: x36, x18, x9 2.5V VEXT, 1.8V VDD, HSTL, RLDRAM II Features 576Mb CIO RLDRAM II Memory MT49H16M36 MT49H32M18 MT49H64M9 Features Figure 1: • 533 MHz DDR operation 1,067 Mb/s/pin data rate • Organization – 16 Meg x 36, 32 Meg x 18, and 64 Meg x 9
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576Mb:
576Mb
MT49H16M36
MT49H32M18
MT49H64M9
09005aef81fe35b2/Source:
09005aef81f83d49
MT49H
F37Z
X1800
hspice MT49H16M36
533401
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Untitled
Abstract: No abstract text available
Text: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288109A
PD48288118A
R10DS0098EJ0001
288M-BIT
PD48288109A
432-word
PD48288118A
216-word
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Untitled
Abstract: No abstract text available
Text: Datasheet PD48288109A μPD48288118A R10DS0098EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48288109A
PD48288118A
288M-BIT
432-word
PD48288118A
216-word
R10DS0098EJ0100
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BA1 K11
Abstract: ba1d1a PD48576118FF-E24-DW1-A
Text: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.
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PD48576109-A
PD48576118-A
R10DS0064EJ0001
PD48576109-A
864-word
PD48576118-A
BA1 K11
ba1d1a
PD48576118FF-E24-DW1-A
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transistor SMD R4d
Abstract: No abstract text available
Text: IRAUDAMP8 120W x 4 Channel Class D Audio Power Amplifier Using the IRS2093M and IRF6665 By Jun Honda, Yasushi Nishimura and Liwei Zheng CAUTION: International Rectifier suggests the following guidelines for safe operation and handling of IRAUDAMP8 Demo board;
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IRS2093M
IRF6665
transistor SMD R4d
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