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    Microchip Technology Inc ATDH1150USB

    JTAG ISP USB CABLE
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    DigiKey ATDH1150USB Box 56 1
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    Mouser Electronics ATDH1150USB 20
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    Newark ATDH1150USB Bulk 1
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    Microchip Technology Inc ATDH1150USB 76
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    Master Electronics ATDH1150USB
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    atc Diversified Electronics TDH-120-A-K-B-30M

    RELAY TIME DELAY 30MIN 10A 250V
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    DigiKey TDH-120-A-K-B-30M Box 5 1
    • 1 $239.58
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    atc Diversified Electronics TDH-120-A-K-A-060

    RELAY TIME DELAY 60SEC 10A 250V
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    DigiKey TDH-120-A-K-A-060 Box 1 1
    • 1 $239.58
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    Microchip Technology Inc ATDH1160VPC

    BOARD PROGRAM ISP 3/5V SUPPORT
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    DigiKey ATDH1160VPC 1
    • 1 $183.91
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    Microchip Technology Inc ATDH1150VPC-

    BOARD PROGRAM ISP 3/5V SUPPORT
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    TDH1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    UNITRODE

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features ➤ Data retention in the absence of power ➤ Automatic write-protection during power-up/power-down cycles ➤ Industry-standard 32-pin 256K x 8 pinout ➤ Conventional SRAM operation; unlimited write cycles


    Original     		PDF bq4014/bq4014Y 32-pin 10-year 256Kx8 bq4014 152-bit UNITRODE

    Untitled

    Abstract: No abstract text available
    Text: bq4011/bq4011Y 32Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4011 is a nonvolatile 262,144-bit static RAM organized as 32,768 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4011/bq4011Y 32Kx8 28-pin 10-year bq4011 144-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y 28-pin 10-year bq4010 536-bit

    bq4010

    Abstract: bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y
    Text: Not Recommended For New Designs bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit bq4010 bq4010LY bq4010MA-150 bq4010MA-200 bq4010MA-70 bq4010MA-85 bq4010Y

    T4 1060

    Abstract: SST29EE512-70-4I-NHE 32-PIN SST29EE512
    Text: 512 Kbit 64K x8 Page-Write EEPROM SST29EE512 SST29EE512512Kb (x8) Page-Write, Small-Sector flash memories Data Sheet FEATURES: • Single Voltage Read and Write Operations – 4.5-5.5V for SST29EE512 • Superior Reliability – Endurance: 100,000 Cycles (typical)


    Original     		PDF SST29EE512 SST29EE512512Kb S71060 S71060-09-000 T4 1060 SST29EE512-70-4I-NHE 32-PIN SST29EE512

    NT5TU32M16AG-37B

    Abstract: NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af
    Text: NT5TU128M4AB/NT5TU128M4AE Green NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE(Green) ) 512Mb DDR2 SDRAM Features • Write Latency = Read Latency -1 CAS Latency and Frequency • Programmable Burst Length: 4 and 8


    Original     		PDF NT5TU128M4AB/NT5TU128M4AE NT5TU64M8AF/NT5TU64M8AB/NT5TU64M8AE NT5TU32M16AF/NT5TU32M16AG /NT5TU32M16AS 512Mb NT5TU32M16AG-37B NT5TU128M4AE nt5tu64m8 nt5tu64m NT5TU32M16 NT5T nt5tu32m16ag nt5tu64m8af

    SST39LF512

    Abstract: SST39LF010 SST39LF020 SST39LF040 SST39VF010 SST39VF020 SST39VF040 SST39VF512
    Text: 512 Kbit / 1 Mbit / 2 Mbit / 4 Mbit x8 Multi-Purpose Flash SST39LF512 / SST39LF010 / SST39LF020 / SST39LF040 SST39VF512 / SST39VF010 / SST39VF020 / SST39VF040 SST39LF/VF512 / 010 / 020 / 0403.0 & 2.7V 512Kb / 1Mb / 2Mb / 4Mb (x8) MPF memories Data Sheet


    Original     		PDF SST39LF512 SST39LF010 SST39LF020 SST39LF040 SST39VF512 SST39VF010 SST39VF020 SST39VF040 SST39LF/VF512 512Kb SST39LF040 SST39VF040

    Untitled

    Abstract: No abstract text available
    Text: bq4852Y RTC Module With 512Kx8 NVSRAM Features General Description ➤ Integrated SRAM, real-time clock, CPU supervisor, crystal, power-fail control circuit, and battery The bq4852Y RTC Module is a nonvolatile 4,194,304-bit SRAM organized as 524,288 words by 8 bits with


    Original     		PDF bq4852Y 512Kx8 304-bit 10-year

    Untitled

    Abstract: No abstract text available
    Text: bq4010/bq4010Y 8Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4010 is a nonvolatile 65,536-bit static RAM organized as 8,192 words by 8 bits. The integral control circuitry and lithium energy source provide reliable nonvolatility


    Original     		PDF bq4010/bq4010Y bq4010 536-bit 28-pin 10-year

    DS1250

    Abstract: DS1250AB DS1250AB-100 DS1250AB-70 DS1250Y DS1250Y-100 DS1250Y-70 DS9034PC
    Text: DS1250Y/AB 4096k Nonvolatile SRAM www.maxim-ic.com FEATURES § § § § § § § § § § § § PIN ASSIGNMENT 10 years minimum data retention in the absence of external power Data is automatically protected during power loss Replaces 512k x 8 volatile static RAM,


    Original     		PDF DS1250Y/AB 4096k DS1250Y) DS1250AB) 32-pin DS1250 DS1250AB DS1250AB-100 DS1250AB-70 DS1250Y DS1250Y-100 DS1250Y-70 DS9034PC

    25x16

    Abstract: ST24C16 ST24W16 ST25C16 ST25W16
    Text: ST24C16, ST25C16 ST24W16, ST25W16 16 Kbit Serial I2C Bus EEPROM with User-Defined Block Write Protection 1 MILLION ERASE/WRITE CYCLES, with 40 YEARS DATA RETENTION SINGLE SUPPLY VOLTAGE: – 4.5V to 5.5V for ST24x16 versions – 2.5V to 5.5V for ST25x16 versions


    Original     		PDF ST24C16, ST25C16 ST24W16, ST25W16 ST24x16 ST25x16 ST24W16 ST24C16 ST24/25C16 25x16 ST24C16 ST25C16 ST25W16

    TAG 8926

    Abstract: Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733
    Text: MCIMX31 and MCIMX31L Multimedia Applications Processors Reference Manual MCIMX31RM Rev. 1 2/2006 How to Reach Us: USA/Europe/Locations Not Listed: Freescale Semiconductor Literature Distribution Center P.O. Box 5405 Denver, Colorado 80217 1-800-521-6274 or 480-768-2130


    Original     		PDF MCIMX31 MCIMX31L MCIMX31RM IOIS16 IOIS16/WP MCIMX31L TAG 8926 Lpg 899 SDC 2921 TF 6221 HEN LED display 12V+RELAY+1+C/8 pin ic sdc 3733

    Untitled

    Abstract: No abstract text available
    Text: bq4010/Y/LY www.ti.com SLUS116A – MAY 1999 – REVISED JUNE 2007 8 k x 8 NONVOLATILE SRAM 5 V, 3.3 V FEATURES • • • • • • GENERAL DESCRIPTION Data Retention for at least 10 Years Without Power Automatic Write-Protection During Power-up/Power-down Cycles


    Original     		PDF bq4010/Y/LY SLUS116A 28-Pin 536-bit

    Untitled

    Abstract: No abstract text available
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4014/bq4014Y 256Kx8 bq4014 152-bit 32-pin 10-year

    M34D64

    Abstract: M34D64-R M34D64-W
    Text: M34D64 64 Kbit Serial I²C Bus EEPROM With Hardware Write Control on Top Quarter of Memory FEATURES SUMMARY 2 • Two Wire I C Serial Interface Supports 400 kHz Protocol ■ Figure 1. Packages Single Supply Voltage: – 2.5V to 5.5V for M34D64-W – 1.8V to 5.5V for M34D64-R


    Original     		PDF M34D64 M34D64-W M34D64-R M34D64 M34D64-R M34D64-W

    bq4014

    Abstract: BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85
    Text: bq4014/bq4014Y 256Kx8 Nonvolatile SRAM Features General Description ➤ Data retention in the absence of power The CMOS bq4014 is a nonvolatile 2,097,152-bit static RAM organized as 262,144 words by 8 bits. The integral control circuitry and lithium energy


    Original     		PDF bq4014/bq4014Y 256Kx8 bq4014 152-bit 32-pin 10-year BQ4014MB-120 BQ4014MB-85 bq4014Y BQ4014YMB-85

    ir 0948

    Abstract: No abstract text available
    Text: Driver Transformers •4- .750 4 .660 t □ 11 11 1! II fj I -*j 1-4- .8 5 0 - ► 1 Tififr I ►j .515 I-4 -.2 0 0 -4—.850 — 4 .830 II II U II LJ Features t- -i TDH187 •Core:EI187 • Ae 0.228 • le 4.01 • AW 0.316 .1 7 5 4 TDH2425 • Core: El 2425


    OCR Scan     		PDF TDH187 EI187 TDH2425 TDH375 TDH21 TDH625 ir 0948

    10ST10

    Abstract: lq55
    Text: Ordering n u m b e r:EN4794B CMOS LSI LC3564S, SS, SM, ST-70/85/10 64K 8192wordsX8 bits SRAM Overview The LC3564S, LC3564SS, LC3564SM, and LC3564ST are asynchronous silicon gate CMOS static RAMs with an 8192-word X 8-bit organization. These SRAMs are full CMOS type


    OCR Scan     		PDF EN4794B LC3564S, ST-70/85/10 8192wordsX8 LC3564SS, LC3564SM, LC3564ST 8192-word 10ST10 lq55

    SS 1091

    Abstract: SED1510F0C LCD ALPHANUMERIC DISPLAY 1091
    Text: SED1510 CMOS SEGMENT-TYPE LCD CONTROLLER DRIVER • Serial Data Interface • Built-in Display data RAM • 4 COM Driver Output and 32 SEG Driver Output • DESCRIPTION The SED1510 is an intelligent CMOS LCD driver-controller for segment type liquid crystal display with the


    OCR Scan     		PDF SED1510 SED1510 SEG10 SEG11 SEG12 SEG13 SEG14 SEG15 SS 1091 SED1510F0C LCD ALPHANUMERIC DISPLAY 1091

    DS1245V

    Abstract: 32-PIN 34-PIN DS1245 DS1245AB DS1245Y DS1243AB-100
    Text: D S 1245Y /A B DALLAS s e m ic o n d u c t o r DS1245Y/AB 1024K Nonvolatile SRAM FEATURES PIN ASSIGNM ENT * 1 0 years minimum data retention in the absence of external power 1 1 NC A16 • Data is automatically protected during power loss Í A14 • Dl P-package devices directly replace 128K x 8 vola­


    OCR Scan     		PDF DS1245Y/AB 1024K DS1245Y) DS1245AB) 32-pin 2blH13D DS1245YL/ABL 34-PIN DS1245V DS1245 DS1245AB DS1245Y DS1243AB-100

    34-PIN

    Abstract: DS1345 DS1345W DS9034PC
    Text: DS1345W PRELIMINARY •»Ai g j i c U A L L A O s e m ic o n d u c to r FEATURES DS1345W 3.3V 1024K Nonvolatile SRAM with Battery Monitor PIN ASSIGNMENT • 10 years m inim um data retention in the absence of external power NC NC A14 A13 A12 A11 A10 A9 A8


    OCR Scan     		PDF DS1345W 1024K 128Kx 34-PIN DS1345 DS1345W DS9034PC

    Untitled

    Abstract: No abstract text available
    Text: A J • ■ HY62256A H Y U N o n i m x M lt CMOS SRAM s e m ic o n d u c t o r M241201B-APR91 DESCRIPTION FEATURES The HY62256A is a high speed low power, 32,768 words by 8-bit CMOS static RAM fabricated using HYUNDAI’S high perfor­ m ance twin tub CM OS process. This high


    OCR Scan     		PDF HY62256A M241201B-APR91 HY62256A

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATE] DEVICE bbE J> m 4A25771 GG12414 Ì7D « I D T VERY LOW POWER 3.3V CMOS FAST SRAM 256k 32k X 8-BIT) ADVANCE INFORMATION IDT713256SL Integrated Device Technology, Inc. FEATURES • Ideal for 16/32-bit notebook/sub-notebook cache at 20,25, and 33MHz, and for other battery-operated equipment


    OCR Scan     		PDF 4A25771 GG12414 IDT713256SL 16/32-bit 33MHz, 500uA 20/25/30ns 300uA 28-pin IDT713256SL