Untitled
Abstract: No abstract text available
Text: ISSP IS28F002BV/BLV 262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation A u to m a te d B y te W rite an d B lo c k E rase — In d u s try -S ta n d a rd C o m m a n d U ser
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IS28F002BV/BLV
16-KB
IS28F002BVB-80TI
40-pin
IS28F002BVT-80TI
IS28F002BLVB-120TI
IS28F002BLVT-120TI
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Untitled
Abstract: No abstract text available
Text: 64K x 32 LOW VOLTAGE SYNCHRONOUS PIPELINE STATIC RAM ADVANCE INFORMATION MARCH 1997 FEATURES DESCRIPTION • Fast access time: The IS S I IS61LV6432 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the Pentium , 680X0™,
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IS61LV6432
680X0â
ns-83
ns-75
ns-66
T004404
SR018-0A
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tdq4-M
Abstract: HP 2231 IS42S16128
Text: 28 i 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz • Two Bank internal structure: ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance.
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131072-word
16-bit
50-pin
DR005-0A
tdq4-M
HP 2231
IS42S16128
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D2259
Abstract: No abstract text available
Text: ISSI 128K x 36 SYNCHRONOUS PIPELINED STATIC RAM ADVANCE INFORMATION JUNE1997 FEATURES DESCRIPTION • Fast access time: The IS S IIS61SP12836 is a high-speed, low-power synchro nous static RAM designed to provide a burstable, highperformance, secondary cache for the i486 , Pentium™,
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5ns-166
8ns-150
4ns-133
5ns-100
100-Pin
119-pin
IS61SP12836
TDD4404
PK017-1A
T004404
D2259
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DDD0444
Abstract: No abstract text available
Text: issr IS28F200BV/BLV 131,072 x 16/262,144 x 8 SmartVoltage BOOT BLOCK FLASH MEMORY • SmartVoltage Technology — 5V or 12V Program/Erase — 2.7V, 3.3V or 5V Read Operation ADVANCE INFORMATION NOVEMBER 1996 • Industrial Temperature Operation 40°C to +85°C
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IS28F200BV/BLV
x8/x16
32-bit
16-KB
96-KB
128-KB
IS28F200BVB-80TI
48-pin
44-pin
IS28F200BVT-80TI
DDD0444
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00hy
Abstract: HOA9 IS28F020 TGD4404
Text: ISSI IS28F020 262,144 x 8 CMOS FLASH MEMORY p r e l im in a r y SEPTEMBER 1995 FEATURES • High performance - 70 ns maximum access time • CMOS low power consumption - 30 mA maximum active current -100 maximum standby current • Compatible with JEDEC-standard byte-wide
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IS28F020
32-pin
IS28F020-90PL
IS28F020-90T
IS28F020-120W
600-mil
IS28F020-120PL
IS28F020-120T
00hy
HOA9
IS28F020
TGD4404
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Untitled
Abstract: No abstract text available
Text: ISSI -r iiS IS62C64 •M t» 8K x 8 LOW POWER CMOS STATIC RAM FEATURES DESCRIPTION • CMOS low power operation The IS S IIS62C64 is a low power, 8,192-word by 8-bit static RAM. It is fabricated using ISSPs high-performance CMOS technology. — 400 mW max. operating
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IS62C64
IIS62C64
192-word
IS62C64-45W
IS62C64-45U
600-mil
450-mil
IS62C64-70W
IS62C64-70U
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IS93C46-3
Abstract: sk 451 d15d01
Text: ISSI 1,024-BIT SERIAL ELECTRICALLY ERASABLE PROM A U G U S T 1995 FEATURES OVERVIEW • State-of-the-art architecture — Non-volatile data storage — Low voltage operation: 3.0V Vcc = 2.7V to 6.0V — Full T TL compatible inputs and outputs — Auto increment for efficient data dump
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IS93C46-3
024-BIT
T004404
IS93C46-3P
600-mil
IS93C46-3G
IS93C46-3GR
IS93C46-3PI
IS93C46-3
sk 451
d15d01
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Untitled
Abstract: No abstract text available
Text: ISSI 262,144 x 8 CMOS FLASH MEMORY p r e l im in a r y SEPTEMBER 1995 FEATURES • High pe rfo rm an ce - 70 ns m axim um acce ss tim e • Flash electrical bulk chip-e ra se - O ne second typica l chip-e ra se • C M O S low p o w e r con sum p tion - 30 m A m axim um active curre nt
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IS28F020-120W
IS28F020-120PL
IS28F020-120T
600-mil
IS28F020-70WI
IS28F020-70PLI
IS28F020-70TI
IS28F020-90WI
IS28F020-90PLI
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Untitled
Abstract: No abstract text available
Text: ISSI I S 2 7 L V 5 1 2 65,536 X 8 LOW VOLTAGE CMOS EPROM FEATURES DESCRIPTION • Single 3.3V power supply The IS S IIS27LV512 is a low voltage, low power, high-speed 512K-bit CMOS 64K-word by 8-bit Ultraviolet Erasable CMOS Programmable Read-Only Memory. It utilizes the standard
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IIS27LV512
512K-bit
64K-word
IS27C512
IS27LV512
IS27LV512-90WI
IS27LV512-90PLI
IS27LV512-90CWI
IS27LV512-90TI
600-mil
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Untitled
Abstract: No abstract text available
Text: ISSI IS89C52 CMOS SINGLE CHIP 8-BIT MICROCONTROLLER with 8-Kbytes of FLASH PRELIMINARY APRIL 1998 FEATURES GENERAL DESCRIPTION • 80C51 based architecture The ISSIIS89C52 is a high-performance microcontroller fabricated using high-density CMOS technology. The
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IS89C52
80C51
ISSIIS89C52
CMOSIS89C52
80C52
16-bit
IS89C52
PK13197W
TDD4404
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Untitled
Abstract: No abstract text available
Text: 256K x 16 4-MBIT SYNCHRONOUS DYNAMIC RAM ADVANCE INFORMATION JUNE 1997 FEATURES DESCRIPTION • Clock frequency: 100 MHz ISSI's 4Mb Synchronous DRAM IS42S16128 is organized as a 131072-word x 16-bit x 2-bank for improved performance. The synchronous DRAMs achieve high-speed data transfer
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IS42S16128
131072-word
16-bit
16-bit
1DD4404
DR005-OA
IS42S16128
DR005
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