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    Cornell Dubilier Electronics Inc TDC124K035NSE

    Tantalum Capacitor, 0.12Uf, 35V, Radial 10%; Capacitance:0.12Μf; Voltage(Dc):35V; Capacitance Tolerance:± 10%; Capacitor Terminals:Pc Pin; Lead Spacing:3.17Mm; Esr:-; Failure Rate:-; Ripple Current:-; Product Diameter:4.45Mm Rohs Compliant: No |Cornell Dubilier TDC124K035NSE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Newark TDC124K035NSE Bulk 1,000
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    TDC 124 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TDC106*035NSF-F

    Abstract: Barium titanate material TDC226K035WSG-F afk-kit2 CK05BX223K CK06BX104K ck06bx334k
    Text: 1786-2012.qxp:QuarkCatalogTempNew 9/17/12 6:16 PM Page 1786 Tantalum, Ceramic Capacitors and Design Kits TDC — Epoxy Dipped Solid Tantalum CK — Multilayer Ceramic D Type Type TDC capacitors offer the long life electrical stability characteristics of solid tantalum at low cost. The tough epoxy coating provides uniform lead


    Original     		PDF MIL-C11015. 701863ic SKSEK151 TDC106*035NSF-F Barium titanate material TDC226K035WSG-F afk-kit2 CK05BX223K CK06BX104K ck06bx334k

    CY7C09569V

    Abstract: No abstract text available
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 1CY7C025/0251 CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 16K/32K FLEx36TM 1CY7C025/0251

    transistor A144

    Abstract: a144* transistor CY7C09569V CY7C09579V-83AXI A144 transistor data sheet CY7C09289V CY7C09369V CY7C09379V CY7C09579V
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • 3.3V Low operating power • True dual-ported memory cells which allow simultaneous access of the same memory location


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 16K/32K FLEx36TM CY7C09569V CY7C09579V transistor A144 a144* transistor CY7C09579V-83AXI A144 transistor data sheet

    transistor A144

    Abstract: A144 transistor data sheet CY7C09569V CY7C09579V
    Text: 25/0251 CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V


    Original     		PDF CY7C09569V CY7C09579V 16K/32K FLEx36TM CY7C09569V) CY7C09579V) 25-micron CY7C09569V/CY7C09579V transistor A144 A144 transistor data sheet CY7C09569V CY7C09579V

    CY7C09569V

    Abstract: 4an4 CY7C09579V CY7C09579V-67AC
    Text: 25/0251 CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V


    Original     		PDF CY7C09569V CY7C09579V 16K/32K FLEx36TM CY7C09569V) CY7C09579V) 25-micron CY7C09569V/CY7C09579V CY7C09569V 4an4 CY7C09579V CY7C09579V-67AC

    CY7C09569V

    Abstract: CY7C09579V
    Text: 51 PRELIMINARY CY7C09569V CY7C09579V Back 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True Dual-Ported memory cells which allow simultaneous access of the same memory location • 2 Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V


    Original     		PDF CY7C09569V CY7C09579V 16K/32K FLEx36TM CY7C09569V) CY7C09579V) 25-micron CY7C09569V CY7C09579V

    transistor A144

    Abstract: CY7C09569V CY7C09289V CY7C09369V CY7C09379V CY7C09579V
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • 3.3V Low operating power • True dual-ported memory cells which allow simultaneous access of the same memory location


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 16K/32K FLEx36TM CY7C09569V CY7C09579V transistor A144

    transistor A144

    Abstract: CY7C09569V CY7C09289V CY7C09369V CY7C09379V CY7C09579V
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • 3.3V Low operating power • True dual-ported memory cells which allow simultaneous access of the same memory location


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 16K/32K FLEx36TM CY7C09569V CY7C09579V transistor A144

    CY7C09569V

    Abstract: No abstract text available
    Text: 1 7C09579V: 10/97 Revision: May 1, 2000 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices


    Original     		PDF 7C09579V: CY7C09569V CY7C09579V 16K/32K FLEx36TM CY7C09569V) CY7C09579V) 25-micron 133-MHz

    CY7C09569V

    Abstract: ba172 CY7C09579V
    Text: 1 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V


    Original     		PDF CY7C09569V CY7C09579V 16K/32K FLEx36TM CY7C09569V) CY7C09579V) 25-micron CY7C09569V ba172 CY7C09579V

    CY7C09569V

    Abstract: CY7C09579V
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM 1CY7C025/0251 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36™ Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 16K/32K FLEx36â 1CY7C025/0251 CY7C09569V

    CY7C09569V

    Abstract: No abstract text available
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K × 36 FLEx36® Synchronous Dual-Port Static RAM


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 FLEx36® FLEx36

    CY7C09569V

    Abstract: CY7C09289V CY7C09369V CY7C09379V CY7C09579V
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM Features Functional Description •


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 FLEx36® CY7C09569V CY7C09579V FLEx36

    CY7C09569V

    Abstract: No abstract text available
    Text: 25/0251 CY7C09569V CY7C09579V PRELIMINARY 3.3V 16K/32K x 36 FLEx36 Synchronous Dual-Port Static RAM Features • True dual-ported memory cells which allow simultaneous access of the same memory location • Two Flow-Through/Pipelined devices — 16K x 36 organization CY7C09569V


    Original     		PDF CY7C09569V CY7C09579V 16K/32K FLEx36TM CY7C09569V) CY7C09579V) 25-micron 100-MHz

    CY7C09569V

    Abstract: No abstract text available
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K × 36 FLEx36® Synchronous Dual-Port Static RAM


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 FLEx36Â CY7C09569V CY7C09579V FLEx36

    A14L

    Abstract: IDT70V9279 IDT70V9279L IDT70V9279S
    Text: HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9279S/L Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all control, data, and address inputs


    Original     		PDF IDT70V9279S/L 50MHz 128-pin PK128-1) 70V9279 16-Bit) A14L IDT70V9279 IDT70V9279L IDT70V9279S

    A13L

    Abstract: IDT70V9269 IDT70V9269L IDT70V9269S
    Text: HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9269S/L Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all Control, data, and address inputs


    Original     		PDF IDT70V9269S/L 50MHz 128-pin PK128-1) 70V9269 16-Bit) A13L IDT70V9269 IDT70V9269L IDT70V9269S

    A14L

    Abstract: IDT70V9279 IDT70V9279L IDT70V9279S
    Text: PRELIMINARY IDT70V9279S/L HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.


    Original     		PDF IDT70V9279S/L 9/12/15ns IDT70V9279S 429mW IDT70V9279L 70V9279 70V927 200mV A14L IDT70V9279 IDT70V9279L IDT70V9279S

    A13L

    Abstract: IDT70V9269 IDT70V9269L IDT70V9269S
    Text: HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9269S/L Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all Control, data, and address inputs


    Original     		PDF IDT70V9269S/L 50MHz 128-pin PK128-1) 70V9269 16-Bit) A13L IDT70V9269 IDT70V9269L IDT70V9269S

    CY7C09569V

    Abstract: CY7C09289V CY7C09369V CY7C09379V CY7C09579V
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM Features Functional Description •


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 FLEx36® CY7C09569V CY7C09579V FLEx36

    CY7C09569V

    Abstract: No abstract text available
    Text: CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3.3 V 16 K / 32 K x 36 FLEx36 Synchronous Dual-Port Static RAM CY7C09569V CY7C09579V ® 3.3 V 16 K / 32 K × 36 FLEx36 Synchronous Dual-Port Static RAM 3.3 V 16 K / 32 K × 36 FLEx36® Synchronous Dual-Port Static RAM


    Original     		PDF CY7C09569V CY7C09579V CY7C09289V CY7C09369V CY7C09379V CY7C09389V3 FLEx36® FLEx36

    A14L

    Abstract: IDT70V9279 IDT70V9279L IDT70V9279S
    Text: HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM PRELIMINARY IDT70V9279S/L Integrated Device Technology, Inc. FEATURES: • Full synchronous operation on both ports - 4ns setup to clock and 1ns hold on all control, data, and address inputs


    Original     		PDF IDT70V9279S/L 50MHz 128-pin PK128-1) 70V9279 16-Bit) A14L IDT70V9279 IDT70V9279L IDT70V9279S

    Untitled

    Abstract: No abstract text available
    Text: IDT70V9279S/L HIGH-SPEED 3.3V 32K x 16 SYNCHRONOUS DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.


    Original     		PDF IDT70V9279S/L 9/12/15ns IDT70V9279S 429mW IDT70V9279L 70V9279 70V927 200mV

    A13L

    Abstract: IDT70V9269 IDT70V9269L IDT70V9269S
    Text: HIGH-SPEED 3.3V 16K x 16 SYNCHRONOUS PIPELINED DUAL-PORT STATIC RAM Features: ◆ ◆ ◆ ◆ ◆ ◆ True Dual-Ported memory cells which allow simultaneous access of the same memory location High-speed clock to data access – Commercial: 9/12/15ns max.


    Original     		PDF 9/12/15ns IDT70V9269S 429mW IDT70V9269L IDT70V9269S/L A13L IDT70V9269 IDT70V9269L IDT70V9269S