SKM224A
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ Tcase = 25 °C Tcase = 85 °C AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 200 200 120 87 360 ± 20 500 – 55 . . .+150 2 500 Class F 55/150/56
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41C0R
Abstract: ISO 11452-3 5Z27 DIODE C18090 Q62705-K714 t-5Z27 DIODE TLE4941C
Text: Data Sheet, V 2.1, April 2005 TLE4941 TLE4941C Differential Two-Wire Hall Effect Sensor IC Se n so rs N e v e r s t o p t h i n k i n g . Edition 2005-04 Published by Infineon Technologies AG, St.-Martin-Strasse 53, 81669 München, Germany Infineon Technologies AG 2005.
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TLE4941
TLE4941C
TLE4941/42
41C0R
ISO 11452-3
5Z27 DIODE
C18090
Q62705-K714
t-5Z27 DIODE
TLE4941C
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8414 hr papst
Abstract: No abstract text available
Text: Kompaktlüfter für Gleich- und Wechselspannung Ausgabe 2015-04 Trendsetter in der Lüftertechnologie Kompromisslose Qualität made by ebm-papst Zu den Besten gehören Mit innovativen Technologien Trends setzen. Den Kunden zuhören. Aus den Anforderungen der Praxis neue Ideen entwickeln und mit Pioniergeist in die Tat umsetzen. Mit dieser Philosophie ist ebm-papst zum
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D-78112
D-74673
D-84030
8414 hr papst
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AN-994
Abstract: IRF3704 IRF3704L IRF3704S IRF3707 IRF3707L IRF3707S
Text: 2002-02-04 PRODUKTINFORMATION Vi reserverar oss mot fel samt förbehåller oss rätten till ändringar utan föregående meddelande ELFA artikelnr 71-146-89 IRF3707 HEXFET TO-220 PD - 93937A IRF3707 IRF3707S IRF3707L SMPS MOSFET Applications l High Frequency DC-DC Isolated
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IRF3707
O-220
3937A
IRF3707
IRF3707S
IRF3707L
IRF3704S
O-220AB
IRF3704
O-262
AN-994
IRF3704
IRF3704L
IRF3704S
IRF3707L
IRF3707S
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RQK0303MGDQATL-E
Abstract: RQK0303MGDQA SC-59A
Text: RQK0303MGDQA Silicon N Channel MOS FET Power Switching REJ03G1276-0400 Rev.4.00 Jun 15, 2006 Features • Low on-resistance RDS on = 42 mΩ typ (VGS = 10 V, ID = 1.8 A) • Low drive current • High speed switching • 4.5 V gate drive Outline RENESAS Package code: PLSP0003ZB-A
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RQK0303MGDQA
REJ03G1276-0400
PLSP0003ZB-A
RQK0303MGDQATL-E
RQK0303MGDQA
SC-59A
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skm253b
Abstract: 020x
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units RGE = 20 k Ω Tcase = 25 °C Tcase = 100 °C 1 ms AC, 1 min., 200 µA DIN 40 040 DIN IEC 68 T.1 200 200 250 150 750 ± 20 1000 –40 . +150 (125)
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M253B
LS-52
skm253b
020x
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Untitled
Abstract: No abstract text available
Text: Data Sheet PA2690T1R R07DS1000EJ0101 Rev.1.01 Mar 04, 2013 COMPLEMENTARY MOSFET 20V, 4.0A, 42mΩ / –20V, –3.0A, 79mΩ Description The μPA2690T1R is Dual N- and P-channel MOS Field Effect Transistors for switching application. This device features a low on-state resistance and excellent switching characteristics, and is suitable for applications
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PA2690T1R
R07DS1000EJ0101
PA2690T1R
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M253B
Abstract: No abstract text available
Text: Absolute Maximum Ratings Values Symbol Conditions 1 VDS VDGR ID IDM VGS PD Tj, Tstg) Visol humidity climate Units RGE = 20 k Ω Tcase = 25 °C Tcase = 100 °C 1 ms AC, 1 min., 200 µA DIN 40 040 DIN IEC 68 T.1 200 200 250 150 750 ± 20 1000 –40 . +150 (125)
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M253B
LS-52
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Untitled
Abstract: No abstract text available
Text: Absolute Maximum Ratings Symbol VDS VDGR ID IDM VGS PD Tj, Tstg Visol humidity climate Conditions 1 RGS = 20 kΩ AC, 1 min DIN 40 040 DIN IEC 68 T.1 Values Units 800 800 36 144 ± 20 700 – 55 . . .+150 2 500 Class F 55/150/56 V V A A V W °C V 36 144 A
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Untitled
Abstract: No abstract text available
Text: VN B14N04/K14N04FM VNP14N04FI/VNV14N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VN B14N 04 VN K14N 04FM VNP14N 04FI VN V14N 04 Vclamp 42 42 42 42 V V V V R D S o n 0 .0 7 0 .0 7 0 .0 7 0 .0 7 Q. a n Cl 11im 14 14 14 14 A A A A . . . . . .
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B14N04/K14N04FM
VNP14N04FI/VNV14N04
VNP14N
O-263
VNB14N04,
VNK14N04FM,
VNP14N04FI
VNV14N04
14N04FI-VNV14N04
PowerSO-10
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AKN62428
Abstract: 048576-WORD
Text: AKN62418 Series AKN62428 Series 524288-Word A KN62418, x 16-Bit/I 048576-Word A K N 62428 Series is x 8-Bit CMOS Mask Programmable ROM mask- PIN CONFIGURATION programmable ROM organized either as 524288-word x 16-Bit or as an 8-Mbit CM O S A K N 62418P, A K N 62428P
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AKN62418
AKN62428
524288-Word
KN62418,
16-Bit/I
048576-Word
62418P,
62428P
524288-word
16-Bit
048576-WORD
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SGS-Thomson mosfet ipak
Abstract: VN MOSFET mosfet vn 10 1SS P
Text: S G S -T H O M S O N M D O ^m iC T IfM O lg l V N D 7 N 0 4 /V N D 7 N 0 4 -1 V N P 7 N 0 4 F I/K 7 N 0 4 FM "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE VND7N04 V N D 7N 04- 1 VNP7N04FI VNK7N04FM Vclam p 42 42 42 42 V V V V RDS on 11im 0.14 a. 0.14 Q.
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VND7N04
VNP7N04FI
VNK7N04FM
VND7N04,
VND7N04-1,
VNK7N04FM
VND7N04/VND7N04-1/VNP7N04FI/VNK7N04FM
OT82-FM
P032R
SGS-Thomson mosfet ipak
VN MOSFET
mosfet vn 10
1SS P
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n713
Abstract: vnp49n
Text: •THOMSON VNP49N04FI MOfôlSLl&rmfflDCS VNB49N04/VNV49N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp VNP49N 04FI VNB49N04 VN V49N 04 42 V 42 V 42 V R d S< o i i 0.02 Q 0.02 Cl 0.02 £2 lllm 49 A 49 A 49 A . . . . . LINEAR CURRENT LIMITATION
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VNP49N
VNB49N04/VNV49N04
VNB49N04
VNP49N04FI,
VNV49N04
n713
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Untitled
Abstract: No abstract text available
Text: VNP28N04FI VNB28N04/VNV28N04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S o n I lim VNP28N 04FI VN B28N 04 VN V28N 04 42 V 42 V 42 V 0.0 35 Q. 0 .0 3 5 a 0.0 35 n 28 A 28 A 28 A . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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VNP28N04FI
VNB28N04/VNV28N04
VNP28N
VNP28N04FI,
VNB28N04
VNV28N04
MOSFETSNB28N04-VNV28N04
PowerSO-10
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SGS-Thomson mosfet
Abstract: No abstract text available
Text: H Z! SGS-THOMSON ESII lS@IILICTi B!lllGi VNH100N04 "OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TARGET DATA TYPE Velamp RoS on him VN H 100N 04 42 V 0 .0 1 2 n 100 A . • ■ . ■ . ■ . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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VNH100N04
O-218
O-218
VNH100N04
SGS-Thomson mosfet
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Untitled
Abstract: No abstract text available
Text: Æ T S G S -1H 0M S 0N D lsi S IIL[lCTIs! iD©S VNW50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V clamp R D S (o n ) I lim VNW 50N 04A 42 V 0.012 Q. 50 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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VNW50N04A
O-247
VNW50N04A
P025P
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Untitled
Abstract: No abstract text available
Text: zurück back Absolute Maximum Ratings Values S ym bol C o nd itio ns 1 V ds V dgr Id U nits Rge = 20 kW T1case = 2 5 °C v-' Tcase = 100 °C 1 ms Idm V gs Pd Tj, Tstg) V isol humidity climate AC, 1 min., 200 mA DIN 40 040 DIN IEC 68 T.1 200 200 250 150 750
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M253B020
M253B
XLS-14
XLS-52
CASED56
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B9 DG
Abstract: No abstract text available
Text: S E M IC O N D U C T O R tm w w w .fa irc h ild s e m i.c o m T D C 1 049 High-Speed A/D C o n v e rte r 9-Bit, 30 Msps Features • 30 Msps conversion rate, 15 MHz analog bandwidth • 9-Bit resolution and linearity • Sample-and-hold circuit not required
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64-pin
68-contact
68-pin
TDC1049
DS90001049
B9 DG
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100N04
Abstract: p 471 mosfet
Text: c ? SGS-IHOMSON • v # M€ra§ ilLiCTI3@ilû S VNW100N04 ”OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE V c la m p R D S o n ) him VN W 100N 04 42 V 0 .0 1 2 n 100 A • . . ■ . ■ ■ ■ ■ ■ LINEAR CURRENT LIMITATION THERMAL SHUT DOWN SHORT CIRCUIT PROTECTION
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VNW100N04
O-247
VNW100N04
100N04
p 471 mosfet
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LCD EPSON sed1181
Abstract: SED1181 SED1278F PF471 40 PIN LCD MONITOR CONNECTION DIAGRAM 16 x 2 lcd display
Text: EPSON PF471 -04 S E D 1 181 F la/D la Dot Matrix Extension LCD Driver • 64-bit High Voltage Outqut • Displat Duty Static to 1/32 • CM OS High-Voltage Process • OVER VIEW T h e S E D 1 181 F l a is a s e g m e n t colum n d river c a p a b le of driving a high-contract, lo w -cap acity dot m atrix
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PF471
SED1181
64-bit
SED121
SED1278F,
1/32-duty
SEG12
SEG38
LCD EPSON sed1181
SED1278F
40 PIN LCD MONITOR CONNECTION DIAGRAM
16 x 2 lcd display
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50n04
Abstract: 50N04A
Text: r z 7 Ä T# S G S R - T H O M S O N Î L i M ! 0 gS V N W 50N04A ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET TYPE Vclamp R D S (o n 11i m VN W 50N 04A 42 V 0.0 12 Î2 50 A . LINEAR CURRENT LIMITATION . THERMAL SHUT DOWN . SH O R TC IR C U IT PROTECTION
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50N04A
O-247
50N04A
50n04
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SKM191F
Abstract: skm 191 skm 191F semikron skm 191
Text: s e M IK R D n SEMITRANS M Power MOSFET Modules Absolute Maximum Ratings Symbol Conditions V ds V dgr R g s = 20 k n Id I dm V gs Pd T . Tstg Visol h u m id ity c lim a te A C , 1 m in , 200 |iA DIN 4 0 040 DIN IE C 6 8 T .1 Values Units 1000 1000 28 110
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Untitled
Abstract: No abstract text available
Text: Æ T S G S - 1 H M S N n lsi S IIL[iCTIsî iD©S V N W 100 N 04 ’’OMNIFET”: FULLY AUTOPROTECTED POWER MOSFET P R E L IM IN A R Y D A T A TYPE V clamp RDS(on) 11im VNW 100N 04 42 V 0 .012 Q. 1 00 A . . . . . . . . . . LINEAR CURRENT LIMITATION THERMAL SHUT DOWN
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O-247
VNW100N04
P025P
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14T40
Abstract: 14T50 14020 14P5 14T100 14D150 ESC Electronics 14T30 G20w 14D15
Text: □IGI1A1I DELAY LINES TTL COMPATIBLE 5 TAPS •SINGLE* DUAL 'TRIPLE . < 14 PIN PACKAGE : 11E SERIES 14Tg14G,14D AND 14P D | 3 0 3 7 2 5 ? E S C 0 0 0 044 4 E L E C T R O N IC S S | 1:' T -W -/3 CORP White Dot locates Pin 1 O N L Y A C T IV E P IN S ARE SUPPLIED
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14T25
14T30
14T35
14T40
14T45
14T50
14T60
14T75
14T100
14T125
14020
14P5
14D150
ESC Electronics
G20w
14D15
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