Please enter a valid full or partial manufacturer part number with a minimum of 3 letters or numbers

    TD 130 62706 F Search Results

    TD 130 62706 F Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    td 130 62706 f

    Abstract: IXTP60N10T 60N10T IXTA60N10T IXTP60N10
    Text: Preliminary Technical Information IXTA60N10T IXTP60N10T TrenchMVTM Power MOSFET RDS on N-Channel Enhancement Mode Avalanche Rated TO-263 (IXTA) G Symbol Test Conditions V DSS VDGR TJ = 25°C to 175°C TJ = 25°C to 175°C; RGS = 1 MΩ 100 100 V V VGSM Transient


    Original     		IXTA60N10T IXTP60N10T O-263 O-220) O-220 O-263 O-220 60N10T td 130 62706 f IXTP60N10T 60N10T IXTP60N10 PDF