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    Abstract: No abstract text available
    Text: TOSHIBA T C 5 1 8 1 2 9 B P iy B F L /B F W I7 B F T L r 7 0 V /8 0 V /1 0 V SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM D e s c rip tio n The TC518129B-V is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 w ords by 8 bits. The TC518129B-V


    OCR Scan     		PDF TC518129B-V TC518129B-V risBFTL-70V/80V/1OV D-147 TC518129BPL/BFL/BFWL/BFTL-70V/80V/1OV D-148 TCn724fi

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    Abstract: No abstract text available
    Text: TOSHIBA ‘iO'iTHMÖ 00 2 Ô2 5 2 Û7D TC51V4260DFTS-60/70 PRELIMINARY 262,144 WORD X 16 BIT DYNAMIC RARA Description TheTC51V4260DFTS is the new generation dynamic RAM organized 262,144 word by 16 bits. TheTC51V4260DFTS uti­ lizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques to provide wide operating


    OCR Scan     		PDF TC51V4260DFTS-60/70 TheTC51V4260DFTS TC51V4260DFTS