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    tc528257

    Abstract: W640 SFC39 DIN 41162
    Text: TOSHIBA SILICON GATE CMOS TC528257 t a r g e t s p e c 262,144WORDS X 8BITS MULTIPORT DRAM DESCRIPTION The TC528257 is a 2M bit CM OS m ultiport m em ory equipped with a 262,144-words by 8 -bits dynam ic random access mem ory RAM port and a 512-words by 8 -bits static serial access memory (SA M ) port. The


    OCR Scan     		PDF TC528257 144WORDS TC528257 144-words 512-words -84UUHEB-fl-B TC528257J/SZ/FT/TRâ TC528257J/SZ/FT/TR-70 W640 SFC39 DIN 41162

    TCD201

    Abstract: TCD201C KMSW
    Text: TOSHIBA {LOGIC /MEMO RY } 9097248 DE ^ hl TOSHIBA ’ □ ^7340 OODTSflS t. CLOGIC/MEMORY C C D A RE A IMAGE S E NSOR C C D Charge Coupled Device) 67C TCD201C 09585 T-41-55 The TCD201C is a high resolution and high sensitivity CCD area image sensor which has 560(40x14) picture elements.


    OCR Scan     		PDF TCD201C T-41-55 TCD201C 40x14) 50/im i754a 4D22C-C) TCD201 KMSW

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T C74VH CT574AF/AFW/AFT TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT574AF, TC74VHCT574AFW, TC74VHCT574AFT OCTAL D-TYPE FLIP-FLOP WITH 3 - STATE OUTPUT The TC74VHCT574A is an advanced high speed CMOS OCTAL FLIP-FLOP with 3 -STATE OUTPUT fabricated


    OCR Scan     		PDF C74VH CT574AF/AFW/AFT TC74VHCT574AF, TC74VHCT574AFW, TC74VHCT574AFT TC74VHCT574A TEH72MÃ TC74VHCT574AF/AFW/AFT 20PIN 200mil

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC514273BJ-70/80 262,144 WORD X 16 BIT DYNAMIC RAM DESCRIPTION The TC514273BJ is the new generation dynamic RAM organized 262,144 word by 16 bit. The TC514273BJ utilizes Toshiba’s CMOS silicon gate process technology as well as advanced circuit techniques


    OCR Scan     		PDF TC514273BJ-70/80 TC514273BJ 6/I016) TDT72M -W16/I016 W1/I01 16/I016

    74ALS132

    Abstract: No abstract text available
    Text: - TC74VHC132F/FN/FS QUAD 2 -INPUT SCHMITT NAND GATE The TC74VHC132 is an advanced high speed CMOS 2-INPUT SCHMITT NAND GATE fabricated with silicon gate C2MOS technology. It achieves the high speed operation similar to equivalent Bipolar Schottky TTL while maintaining the CMOS low


    OCR Scan     		PDF TC74VHC132F/FN/FS TC74VHC132 TC74VHC00 TCH72MÃ 0D273D5 74ALS132

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA THM3640A0S/SG -60/70 4,194,304 WORD X 36 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 3640A0 is a 4,194,304 word by 36 bit dynamic RAM m odule which is assem bled with 9 TC5116400J devices on the printed circuit board. This m odule is optim ized for applications which require high


    OCR Scan     		PDF THM3640A0S/SG 3640A0 TC5116400J xxxxxx-60) xxxxxx-70) THM3640A0S/5G THM3640A0S/SG

    thm321000AS

    Abstract: No abstract text available
    Text: TOSHIBA THM321000AS/ASG -60/70/80 1,048,576 WORD X 32 BIT DYNAMIC RAM MODULE DESCRIPTION The THM 321000A is a 1,048,576 w ord by 32 bit dynam ic RAM m odule w hich is assem bled with eight TC514400A SJ devices on the printed circuit board. This m odule can be used as well as 2,097,152 word by 16


    OCR Scan     		PDF THM321000AS/ASG 21000A TC514400A GG256bD THM321000ASG THM321000AS thm321000AS

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA cIOtì 7 2 4 f l 0Q2R00S 370 TC58A040F PRELIMINARY 4Mbit 4M x 1 BIT CMOS AUDIO NAND EEPROM Description The TC58A040 is a single 5 volt 4M bit NAND Electrically Erasable and Programmable Read Only Memory (NAND EEPROM) organized as 256 bits x 128 pages x 128 blocks.


    OCR Scan     		PDF 0Q2R00S TC58A040F TC58A040 NV04010196 OP28-P-45Q 0QETD31

    Untitled

    Abstract: No abstract text available
    Text: m 'iD,i754fi DD2fi73C1 C141 m- TOSHIBA TC59R0808HK PRELIMINARY 1,048,576 WORD x 8 BITS RAMBUS DYNAMIC RAM Description The TC59R0808HK Rambus Dynamic RAM DRAM is a next-generation high-speed CMOS DRAM with a 1,048,576 x 8 bits organization and built-in slave logic. The 16,384 sense amps of the DRAM core are used as cache to achieve data


    OCR Scan     		PDF TC59R0808HK TC59R0808HK 500MB/s. RD0S010496 SHP36-P-1125)

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA T C 5 1 8 1 2 8 B P iy B S P I/B F iy B F W iy B F T L - 7 0 /8 0 /1 0 T C 5 1 8 1 2 8 B P L /B S P L /B F L /B F W L /B F IIr 7 0 L /8 0 L /1 0 L SILICON GATE CMOS 131,072 WORD x 8 BIT CMOS PSEUDO STATIC RAM Description TheTC518128B is a 1M bit high speed CMOS pseudo static RAM organized as 131,072 words by 8 bits. TheTC518128B utilizes


    OCR Scan     		PDF TheTC518128B TC518128B TC518128BPL/BSPL/BFL/BFWL/BFTL-70/80/10 TC518128BPL/BSPL/BFL/BFWL/BFTL-70L/80L/1 TCH724A 002b52b

    Untitled

    Abstract: No abstract text available
    Text: TOSHIBA TC74V H CT540,541AF/AFW/AFT TOSHIBA CM O S DIGITAL INTEGRATED CIRCUIT SILICON MONOLITHIC TC74VHCT540AF, TC74VHCT540AFW, TC74VHCT540AFT TC74VHCT541AF, TC74VHCT541AFW, TC74VHCT541AFT OCTAL BUS BUFFER TC74VHCT540AF/A F W /AFT TC74VHCT541 F A /A F W /AFT


    OCR Scan     		PDF TC74V CT540 541AF/AFW/AFT TC74VHCT540AF, TC74VHCT540AFW, TC74VHCT540AFT TC74VHCT541AF, TC74VHCT541AFW, TC74VHCT541AFT TC74VHCT540AF/A

    Untitled

    Abstract: No abstract text available
    Text: INTEGRATED TO SHIBA CIRCUIT TECHNICAL TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC74LCX74F, TC 74LC X74FN , TC 74LC X74FS DATA SILICON MONOLITHIC TENTATIVE DATA LO W V O L T A G E D U A L D - T Y P E F L IP F L O P W IT H 5 V T O L E R A N T IN P U T S A N D O U T P U T S


    OCR Scan     		PDF TC74LCX74F, X74FN X74FS TC74LCX74 TC74LCX74FN, TC74LCX74FS SOL14-P-150 TC74LCX74F TCH724a

    Untitled

    Abstract: No abstract text available
    Text: SILICON M O NOLITHIC T O SH IBA C M O S DIGITAL INTEGRATED CIRCUIT TC7SH14F/FU SCHMITT INVERTER T h e T C 7 S H 1 4 is an a d va n ce d h ig h spe e d C M O S S C H M IT T IN V E R T E R fab ricated w ith silicon g a te C M O S te c h n o lo gy. It ach ie ve s th e h ig h sp e e d o p e ra tio n sim ilar to e q u ivale n t


    OCR Scan     		PDF TC7SH14F/FU

    Untitled

    Abstract: No abstract text available
    Text: SILICON MONOLITHIC TOSHIBA CMOS DIGITAL INTEGRATED CIRCUIT TC7WH241FU TENTATIVE DATA UNDER DEVELOPMENT DUAL BUS BUFFER NON INVERTED, 3-STATE OUTPUTS T h e T C 7 W H 2 4 1 Is a n a d v a n c e d h ig h speed C M O S D U A L BUS BUFFERS fa b r ic a te d w it h silicon g a te C M O S


    OCR Scan     		PDF TC7WH241FU TC7WH241

    Untitled

    Abstract: No abstract text available
    Text: 524,288 WORD X 9 BIT DYNAMIC RAM DESCRIPTION The TC514900AJLL is the new generation dynam ic RAM organized 524,288 word by 9 bit. The TC514900A JLL utilizes T oshiba’s CM OS silicon gate process technology as well as advanced circuit


    OCR Scan     		PDF -----------------------TC514900AJLL-70/80 TC514900AJLL TC514900A perform/09 TC514900AJLL70/80 0025ti3ti TC514900AJLL-70/80 I/O1-1/09 T0T754Ã