FLL310IQ-3A
Abstract: ED-4701
Text: FLL310IQ-3A High Voltage - High Power GaAs FET FEATURES ・Push-Pull Configuration ・High Power Output:30W ・Excellent Linearity ・Suitable for class A and class AB operation. ・High PAE:40% DESCRIPTION The FLL310IQ-3A is a 30 Watt GaAs FET that employ a push-pull
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FLL310IQ-3A
FLL310IQ-3A
ED-4701
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SCL 1058
Abstract: SCL+1058+n7
Text: SGK7785-100A C-Band Internally Matched GaN-HEMT FEATURES High Output Power: P5dB=50.0dBm Typ. High Gain: GL=12.0dB (Typ.) High PAE: add=42% (Typ.) Broad Band: 7.7 to 8.5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package
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SGK7785-100A
50ohm
SGK7785-100A
50ohm
SCL 1058
SCL+1058+n7
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Untitled
Abstract: No abstract text available
Text: SGK5867-100A C-Band Internally Matched GaN-HEMT FEATURES High Output Power: P5dB=50.0dBm Typ. High Gain: GL=13.5dB (Typ.) High PAE: add=45% (Typ.) Broad Band: 5.85 to 6.75GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package
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SGK5867-100A
75GHz
50ohm
SGK5867-100A
50ohm
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FMM5056
Abstract: FMM5056X ED-4701 eudyna an
Text: Preliminary FMM5056X 5.8-7.2GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 28.0dB(typ.) ・Frequency Band: 5.8 - 7.2 GHz ・Broad Band: 5.8～7.2GHz ・Impedance Matched Zin/Zout = 50Ω DESCRIPTION The FMM5056X is a MMIC amplifier that contains a four-stage
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FMM5056X
FMM5056X
FMM5056
ED-4701
eudyna an
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Untitled
Abstract: No abstract text available
Text: SGK5867-30A C-Band Internally Matched GaN-HEMT FEATURES High Output Power: P5dB=45.0dBm Typ. High Gain: GL=13.5dB (Typ.) High PAE: add=45% (Typ.) Broad Band: 5.85 to 6.75GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package
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SGK5867-30A
75GHz
50ohm
SGK5867-30A
50ohm
6750MHz
6900MHz
7000MHz
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Untitled
Abstract: No abstract text available
Text: SGK7785-30A C-Band Internally Matched GaN-HEMT FEATURES High Output Power: P5dB=45.0dBm Typ. High Gain: GL=12.0dB (Typ.) High PAE: add=39% (Typ.) Broad Band: 7.7 to 8.5GHz Impedance Matched Zin/Zout = 50ohm Hermetically Sealed Package
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SGK7785-30A
50ohm
SGK7785-30A
50ohm
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FMM5061VF
Abstract: FMM5061 x-Band High Power Amplifier ED-4701
Text: FMM5061VF FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage
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FMM5061VF
FMM5061VF
FMM5061
x-Band High Power Amplifier
ED-4701
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FMM5061VF
Abstract: x-band power amplifier ED-4701 x-Band High Power Amplifier eudyna GaAs FET Amplifier x-band mmic
Text: FMM5061VF FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage
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FMM5061VF
FMM5061VF
x-band power amplifier
ED-4701
x-Band High Power Amplifier
eudyna GaAs FET Amplifier
x-band mmic
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EMM5068VU
Abstract: x-band power amplifier 610 108 001 ED-4701 RO4003 MMIC X-band amplifier 1300M CLASS D WITH 494 POWER amplifier diagram
Text: ES/EMM5068VU Preliminary X-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION
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ES/EMM5068VU
EMM5068VU
x-band power amplifier
610 108 001
ED-4701
RO4003
MMIC X-band amplifier
1300M
CLASS D WITH 494 POWER amplifier diagram
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Untitled
Abstract: No abstract text available
Text: FMM5061VF FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=27.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5061VF is a MMIC amplifier that contains a three-stage
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FMM5061VF
FMM5061VF
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ELM5359-60F
Abstract: 501-17 ED-4701 ELM7785-60F
Text: ELM7785-60F C-Band Internally Matched FET FEATURES ・High Output Power: P1dB=48.0dBm Typ. ・High Gain: G1dB=8.0dB(Typ.) ・High PAE: ηadd=37%(Typ.) ・Broad Band: 7.7~8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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ELM7785-60F
ELM7785-60F
1906B,
ELM5359-60F
501-17
ED-4701
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ELM1314-9F
Abstract: ELM1314 SCL 1058 ED-4701
Text: ELM1314-9F Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=39.5dBm Typ. ・High Gain: G1dB=6.0dB(Typ.) ・High PAE: ηadd=30%(Typ.) ・Broad Band: 13.75～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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ELM1314-9F
ELM1314-9F
1906B,
ELM1314
SCL 1058
ED-4701
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ELM1314-30F
Abstract: ED-4701
Text: ELM1314-30F Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.0dBm Typ. ・High Gain: G1dB=5.0dB(Typ.) ・High PAE: ηadd=24%(Typ.) ・Broad Band: 13.75～14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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ELM1314-30F
ELM1314-30F
1906B,
ED-4701
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Untitled
Abstract: No abstract text available
Text: FLM5964-12F/001 C-Band Internally Matched FET FEATURES • High Output Power: P1dB=41.5dBm Typ. • High Gain: G1dB=9.0dB(Typ.) • High PAE: hadd=37%(Typ.) • Broad Band: 5.85 to 6.75GHz • Impedance Matched Zin/Zout = 50ohm • Hermetically Sealed Package
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FLM5964-12F/001
75GHz
50ohm
FLM5964-12F/001
50ohm
25deg
-250uA
65Idss
10MHz
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ELM1414-30F
Abstract: ED-4701 1425GHz
Text: ELM1414-30F Ku-Band Internally Matched FET FEATURES ・High Output Power: P1dB=45.0dBm Typ. ・High Gain: G1dB=5.5dB(Typ.) ・High PAE: ηadd=24%(Typ.) ・Broad Band: 14.0~14.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Hermetically Sealed Package DESCRIPTION
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ELM1414-30F
ELM1414-30F
1906B,
ED-4701
1425GHz
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X-band amplifier
Abstract: 462 008 0004 00 AF
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES High Output Power: Pout=33.0dBm typ. High Linear Gain: GL=26.0dB (typ.) Broad Band: 9.5~13.3GHz Impedance Matched Zin/Zout=50 Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage amplifier, internally matched, for standard communications band in the
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EMM5068X
EMM5068X
X-band amplifier
462 008 0004 00 AF
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EMM5835X
Abstract: ED-4701 16-S-437-60
Text: EMM5835X Ka-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=27.0dBm typ. ・High Linear Gain: GL=21.0dB (typ.) ・Broad Band: 37~40GHz ・Impedance Matched Zin/Zout=50Ω DESCRIPTION The EMM5835X is a MMIC amplifier that contains a four-stage
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EMM5835X
40GHz
EMM5835X
40GHz
1906B,
ED-4701
16-S-437-60
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EMM5068X
Abstract: X-band amplifier SCL 1058 x-band mmic MMIC X-band amplifier ED-4701 emm5068
Text: EMM5068X X-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5~13.3GHz ・Impedance Matched Zin/Zout=50Ω Device DESCRIPTION The EMM5068X is a MMIC amplifier that contains a three-stage
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EMM5068X
EMM5068X
X-band amplifier
SCL 1058
x-band mmic
MMIC X-band amplifier
ED-4701
emm5068
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EMM5069ZB/001
Abstract: MMIC 545 ED-4701 RO4003 EMM5069ZB
Text: EMM5069ZB/001 Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=32.5dBm typ. ・High Linear Gain: GL=30.0dB (typ.) ・Impedance Matched Zin/Zout=50Ω ・QFN 20pin Plastic Mold Package(ZB) Device DESCRIPTION The EMM5069ZB is a MMIC amplifier that contains a four-stages
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EMM5069ZB/001
20pin
EMM5069ZB
Pin0158
1906B,
EMM5069ZB/001
MMIC 545
ED-4701
RO4003
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EMM5077
Abstract: EMM5077VU ED-4701 RO4003 C100p
Text: ES/EMM5077VU Preliminary C-Band Power Amplifier MMIC FEATURES •Output Power; P1dB = 31.0 dBm Typ. •High Gain; GL = 26 dB(Typ.) •Wide Frequency Band ; 3.4 – 5.0 GHz •Impedance Matched Zin/Zout = 50Ω DESCRIPTION The ES/EMM5077VU is a power amplifier MMIC that
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ES/EMM5077VU
ES/EMM5077VU
1906B,
EMM5077
EMM5077VU
ED-4701
RO4003
C100p
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Untitled
Abstract: No abstract text available
Text: EMM5068VU X/Ku-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=26.0dB (typ.) ・Broad Band: 9.5-13.3GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The EMM5068VU is a MMIC amplifier that contains a three-stages
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EMM5068VU
EMM5068VU
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EMM5074VU
Abstract: emm5074 Power Amplifier MMIC EMM5074VU ED-4701 RO4003 TCHC11
Text: ES/EMM5074VU Preliminary C-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=33.0dBm typ. ・High Linear Gain: GL=27.0dB (typ.) ・Broad Band: 5.9-8.5GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION
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ES/EMM5074VU
EMM5074VU
1906B,
emm5074
Power Amplifier MMIC EMM5074VU
ED-4701
RO4003
TCHC11
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EMM5822VU
Abstract: FMM5822VU emm5822 FMM5822 k-band amplifier RO4003 power amplifier mmic
Text: FMM5822VU K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=32.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band: 17.7~19.7GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION The FMM5822VU is a MMIC amplifier that contains a three-stage
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FMM5822VU
FMM5822VU
1906B,
EMM5822VU
emm5822
FMM5822
k-band amplifier
RO4003
power amplifier mmic
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rogers laminate materials
Abstract: SCL 1058 equivalent power amplifier mmic EMM5822VU
Text: FMM5822VU Preliminary K-Band Power Amplifier MMIC FEATURES ・High Output Power: Pout=32.0dBm typ. ・High Linear Gain: GL=22.0dB (typ.) ・Broad Band: 17.7~19.7GHz ・Impedance Matched Zin/Zout=50Ω ・Small Hermetic Metal-Ceramic SMT Package(VU) DESCRIPTION
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FMM5822VU
FMM5822VU
rogers laminate materials
SCL 1058 equivalent
power amplifier mmic
EMM5822VU
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