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    TCH 9 157 Price and Stock

    Kyocera AVX Components TCH9157M025W0050C

    CAP TANT POLY 150UF 25V SMD
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    DigiKey TCH9157M025W0050C Bulk 10 1
    • 1 $145.79
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    Avnet Americas TCH9157M025W0050C Waffle Pack 23 Weeks 1
    • 1 $129.5769
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    Mouser Electronics TCH9157M025W0050C 10
    • 1 $122.41
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    TTI TCH9157M025W0050C Waffle 1
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    Kyocera AVX Components TCH9157M035W0055C

    CAP TANT POLY 150UF 35V SMD
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    DigiKey TCH9157M035W0055C Bulk 10 1
    • 1 $146.16
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    Avnet Americas TCH9157M035W0055C Waffle Pack 23 Weeks 1
    • 1 $129.94736
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    Mouser Electronics TCH9157M035W0055C 8
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    Arrow Electronics TCH9157M035W0055C 4 23 Weeks 1
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    Kyocera AVX Components TCH9157M035W0055J

    CAP TANT POLYMER
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    DigiKey TCH9157M035W0055J Bulk 1
    • 1 $261.8
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    Avnet Americas TCH9157M035W0055J Waffle Pack 23 Weeks 1
    • 1 $209.76845
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    Mouser Electronics TCH9157M035W0055J
    • 1 $261.8
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    Arrow Electronics TCH9157M035W0055J 5 23 Weeks 1
    • 1 $5.083
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    Newark TCH9157M035W0055J Bulk 1
    • 1 $231.64
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    RS TCH9157M035W0055J Bulk 23 Weeks 1
    • 1 $323.97
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    TTI TCH9157M035W0055J Waffle 1
    • 1 $259.18
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    Kyocera AVX Components TCH9157M025B0050U

    CAP TANT POLY 150UF 25V SMD
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    DigiKey TCH9157M025B0050U Bulk 11
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    Kyocera AVX Components TCH9157M025W0050L

    CAP TANT POLYMER
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    DigiKey TCH9157M025W0050L Bulk 1
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    Avnet Americas TCH9157M025W0050L Waffle Pack 23 Weeks 1
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    Mouser Electronics TCH9157M025W0050L
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    RS TCH9157M025W0050L Bulk 23 Weeks 1
    • 1 $305.58
    • 10 $281.13
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    TCH 9 157 Datasheets (2)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TCH9157M025B0050U AVX Capacitors - Tantalum - Polymer Capacitors - CAP TANT POLY 150UF 25V SMD Original PDF
    TCH9157M025W0050U AVX Capacitors - Tantalum - Polymer Capacitors - CAP TANT POLY 150UF 25V SMD Original PDF

    TCH 9 157 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    HAT2137H

    Abstract: TD 6200 ap
    Text: HAT2137H Silicon N Channel Power MOS FET Power Switching ADE-208-1579B Z Preliminary 3rd. Edition Dec. 2002 Features • • • • Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 3.8 mΩ typ. (at VGS = 10 V)


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    PDF HAT2137H ADE-208-1579B D-85622 D-85619 HAT2137H TD 6200 ap

    HAT2129H

    Abstract: ADE-208-1577B
    Text: HAT2129H Silicon N Channel Power MOS FET Power Switching ADE-208-1577B Z Preliminary 3rd. Edition Aug. 2002 Features • Capable of 7 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V)


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    PDF HAT2129H ADE-208-1577B D-85622 D-85619 HAT2129H

    HAT2134H

    Abstract: No abstract text available
    Text: HAT2134H Silicon N Channel Power MOS FET Power Switching ADE-208-1578A Z Preliminary 2nd. Edition Aug. 2002 Features • Capable of 4.5 V gate drive • Low drive current • High density mounting • Low on-resistance RDS(on) = 2.3 mΩ typ. (at VGS = 10 V)


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    PDF HAT2134H ADE-208-1578A D-85622 D-85619 HAT2134H

    HAT2129H

    Abstract: No abstract text available
    Text: HAT2129H Silicon N Channel Power MOS FET Power Switching REJ03G0049-0400Z Previous ADE-208-1577B(Z Rev.4.00 Jun.23.2003 Features • • • • Capable of 7 V gate drive Low drive current High density mounting Low on-resistance RDS(on) = 6 mΩ typ. (at VGS = 10 V)


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    PDF HAT2129H REJ03G0049-0400Z ADE-208-1577B HAT2129H

    HB526A464EN-10

    Abstract: C0-C31 24C02 HB526A464EN-12 Hitachi DSA0068
    Text: HB526A464EN-10/12 1,048,576-Word x 64 x 4bank Non Parity Synchronous Dynamic RAM Module 168-pin JEDEC Standard Outline Unbuffered 8Byte DIMM Rev. 1.0 Apr. 17, 1996 The HB526A464EN belongs to 8 Byte DIMM (Dual In-line Memory Module) family, and has been developed as an optimized main memory solution for 8 Byte processor applications.


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    PDF HB526A464EN-10/12 576-Word 168-pin HB526A464EN 16-Mbit HM5216805TT) 24C02) HB526A464EN-10 C0-C31 24C02 HB526A464EN-12 Hitachi DSA0068

    fmi*07N50E

    Abstract: fmi07n50e
    Text: FMI07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMI07N50E fmi*07N50E fmi07n50e

    FMV07N50E

    Abstract: No abstract text available
    Text: FMV07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMV07N50E O-220F FMV07N50E

    L461

    Abstract: fmp07n50e
    Text: FMP07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMP07N50E O-220AB L461 fmp07n50e

    fmc07

    Abstract: No abstract text available
    Text: FMC07N50E FUJI POWER MOSFET Super FAP-E3 series N-CHANNEL SILICON POWER MOSFET Features Outline Drawings [mm] Maintains both low power loss and low noise Lower RDS on characteristic More controllable switching dv/dt by gate resistance Smaller VGS ringing waveform during switching


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    PDF FMC07N50E fmc07

    Untitled

    Abstract: No abstract text available
    Text: DATE DRAWN Jan.-23-'08 CHECKED Jan.-23-'08 CHECKED Jan.-23-'08 NAME APPROVED DWG.NO. This material and the information herein is the property of Fuji Electric Device Technology Co.,Ltd. They shall be neither reproduced, copied,lent, or disclosed in any way whatsoever for the use of any third party nor


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    PDF FMP07N50E MS5F7003 H04-004-05 H04-004-03

    Untitled

    Abstract: No abstract text available
    Text: TCH Low ESR Hermetic Series SMD Low ESR Tantalum Capacitors with Conductive Polymer Electrode in Hermetic Package FEATURES • • • • • • • • Aerospace & Hi-Rel applications Low ESR conductive polymer electrode Ceramic case hermetic packaging


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    PDF CTC-21D 1000x

    Untitled

    Abstract: No abstract text available
    Text: TCH Low ESR Hermetic Series SMD Low ESR Tantalum Capacitors with Conductive Polymer Electrode in Hermetic Package FEATURES • • • • • • • • Aerospace & Hi-Rel applications Low ESR conductive polymer electrode Ceramic case hermetic packaging


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    PDF CTC-21D 1000x

    TXC 18 E60

    Abstract: DSP56001 users manual 27 MHZ rc receiver 27 MHZ rc transmitter D604 TXC 100 M60 1 pF ceramic capacitor C001 PC D400 E -3G TA 7504 samtec TW serial connectors datasheets
    Text: Order this document by DSP56001/D Freescale Semiconductor DSP56001 Freescale Semiconductor, Inc. 24-Bit General Purpose Digital Signal Processor Pin Grid Array PGA Available in an 88 pin ceramic through-hole package. Ceramic Quad Flat Pack (CQFP) The DSP56001 is a member of Motorola’s family of


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    PDF DSP56001/D DSP56001 24-Bit DSP56001 TXC 18 E60 DSP56001 users manual 27 MHZ rc receiver 27 MHZ rc transmitter D604 TXC 100 M60 1 pF ceramic capacitor C001 PC D400 E -3G TA 7504 samtec TW serial connectors datasheets

    DSP56000

    Abstract: DSP56001 Robinson Nugent PGA socket 32X24 Ceramic Capacitors 104 m30 Nippon capacitors
    Text: Freescale Semiconductor, Inc. Freescale Semiconductor, Inc. MOTOROLA SEMICONDUCTOR TECHNICAL DATA 24-Bit General Purpose Digital Signal Processor Order this document by DSP56001/D DSP56001 Pin Grid Array PGA Available in an 88 pin ceramic through-hole package.


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    PDF 24-Bit DSP56001/D DSP56001 DSP56001 DSP56000 Robinson Nugent PGA socket 32X24 Ceramic Capacitors 104 m30 Nippon capacitors

    DSP56001 users manual

    Abstract: f32 motorola DSP56000 DSP56001 SCF 112 S1535 B1401 Nippon capacitors
    Text: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 24-Bit General Purpose Digital Signal Processor Order this document by DSP56001/D DSP56001 Pin Grid Array PGA Available in an 88 pin ceramic through-hole package. Ceramic Quad Flat Pack (CQFP) The DSP56001 is a member of MotorolaÕs family of


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    PDF 24-Bit DSP56001/D DSP56001 DSP56001 DSP56001 users manual f32 motorola DSP56000 SCF 112 S1535 B1401 Nippon capacitors

    MGFC42V5964A

    Abstract: P141G
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> « M G FC 42 V 5 9 6 4 A »e 5 .9 — 6.4G H z BAND 16W INTERNALLY M ATCHED GaAs F E T DESCRIPTION The M G F C 4 2 V 5 9 6 4 A is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especailly designed fo r use in 5.9 ~ 6.4


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    PDF MGFC42V5964A P141G

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 42 V 5 964 A 5 .9 — 6.4GHz BAND 16W INTERNALLY MATCHED GaAs FET ’ ,r v s P 8' 0'1 DESCRIPTION The M G F C 4 2 V 5 9 6 4 A is an in te rna ily im p e d a n ce -m a tch e d GaAs power F ET especailty designed fo r use in 5.9 ~ 6.4


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    PDF

    pj 59

    Abstract: MGFC38V5964
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC38V5964 5 .9 — 6 .4 G H z BAN D 6 W IN TE R N A L L Y M A TC H E D GaAs F E T DESCRIPTION The M G F C 3 8 V 5 9 6 4 is an in te rna lly im p e d a n ce -m a tch e d GaAs power FET especially designed fo r use in 5 . 9 — 6 .4


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    PDF MGFC38V5964 MGFC38V5964 ltem-01: ltem-51INPUT pj 59

    Untitled

    Abstract: No abstract text available
    Text: C A T A L O G L IS T I N O M I C R O SWI TCH a w y ih m i 531*» ïu i O 3 ~ a» 2 « of * w i a n w -w k y w k i t iw u i t t o w u r r 101HS1 SW ITCH-BASIC | u | NNNM, NIMM tSËJ FEO. MFR. CODE 9 1 9 2 9 ñ M ETAL X .0 6 5 MAX PRETRAVEL— ENCLOSURE -.140 REF


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    PDF 101HS1

    "routing tables"

    Abstract: No abstract text available
    Text: PM I 1^^ I A d v a n c e In fo r m a tio n PMC-970113 PMC-Sierra, Inc. T# PM 3351 ISSUE 1 Fast EtherDirector PM3351 F a s t E th e r D i r e c t o r SINGLE FAST PORT ETHERNET SWI TCH A d v a n c e Information I s s u e 1: J a n u a r y 1 9 9 7 PMC-Sierra, Inc.


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    PDF PMC-970113 PM3351 1997PMC-Sierra, PMC-961052 "routing tables"

    MGFC39V4450A

    Abstract: No abstract text available
    Text: MITSUBISHI SEMICONDUCTOR <GaAs FET> M G FC 39V 4450A p «EUN»N*BV , cw*mie 4 . 4 ' 5 .0 G H z BAND 8 W INTERNALLY M ATCHED GaAs FE T Som e P»r,i DESCRIPTION T he M G F C 3 9 V 4 4 5 0 A is an in te rna lly im p e d a n ce -m a tch e d GaAs power F E T especially designed fo r use in 4.4 ~ 5.0


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    PDF MGFC39V4450A MGFC39V4450A

    C1576

    Abstract: No abstract text available
    Text: CYPRESS MbE D SEMICONDUCTOR SSñRbbE D DG b L f 33 S D CYP CY7C157A CYPRESS SEMICONDUCTOR Features Functional Description • O ptim ized for u se w ith R IS C p ro ces­ so rs, Includin g SPARC T h e C Y 7C 157A cach e sto rag e u n it is a hig h-perform ance C M O S static R A M o r ­


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    PDF CY7C157A 384x16 fallin-33LC 7C157A -33JC -33LM C1576

    F7007N

    Abstract: T151 1SV02 WFA 21
    Text: Semiconductor Products r . N channel, Single 30V/7A I^ Jl Features Low-on resistance V g s = V driving 4 4 V G S= V IEÜJ J7 G - S f f i y x J - - ? ! * - K ftiS I Avalanche capability rating Higher pulse-current Including G-S zener diode Maximum ratings and characteristics


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    PDF 1000mm F7007N T151 1SV02 WFA 21

    SPF 455

    Abstract: SPF-1576 SPF 455 H 5 SPF-1676
    Text: SPF-1576, -1676 2-26 GHz Low Noise PHEMT GaAs FET Preliminary Data Features - Pseudomorphic HEMT Technology - Low Noise Figure: 0.55dB Typical at 12 GHz - High Associated Gain: 10dB Typical at 12 GHz • Low Cost Ceramic Package - Tape and Reel Packaging Available


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    PDF SPF-1576, SPF-1576 SPF 455 SPF 455 H 5 SPF-1676