Untitled
Abstract: No abstract text available
Text: F-3106F 3/07 Index General Performance Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .3-6 HIGH TEMPERATURE CERAMIC CAPACITORS HT/HP - Standard Series - +200°C Ceramic Capacitors C0G (NP0), X7R Dielectric . . . . . . . . . . . . . . . . . . . . . . . . . .7-9
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F-3106F
CH-1211
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isl 6251 schematic
Abstract: smd transistor A4S Siemens OFW 361 smd marking b4h 6Bs smd transistor NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG Transistors Diodes smd A7H a4s smd transistor npn transistor ss100 smd transistor 6Bs
Text: SIEMENS Halbleiter-Datenblätter Im Produktbereich „Halbleiter“ konnten uns leider von SIEMENS nicht alle Daten rechtzeitig zur Verfügung gestellt werden. Wir werden uns bemühen, die Auswahl an Datenblättern dieses Bereichs für die nächste Ausgabe dieser CD zu vervollständigen.
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Q62702-A772
Q62702-A731
Q62702-A773
OT-23
isl 6251 schematic
smd transistor A4S
Siemens OFW 361
smd marking b4h
6Bs smd transistor
NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG
Transistors Diodes smd A7H
a4s smd transistor
npn transistor ss100
smd transistor 6Bs
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10 16s capacitor smd
Abstract: 226 smd capacitor RSM 2322 2222 632 series capacitor MOV 103 M 3 KV 336 smd CAPACITOR 2312 344 7 SMD resistor 474 2222 631 series capacitor SMD electrolytic capacitor
Text: Information New products and highlights i Ceramic capacitors Information Page Multilayer ceramic capacitors, NP0 10 V - 4000 V Multilayer ceramic capacitors, X7R 10 V - 2000 V Multilayer ceramic capacitors, Y5V 10 V - 250 V General purpose, high voltage capacitors 1000 V to 3000 V X7R and Y5V
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SPSS011D
Abstract: MX 0541 EQUIVALENT TIMER IC WITH CD 4060 TCA 785 application note equivalent transistor bc 649 TSP50C12 TCA 785 interfacing DAC with 0830 microprocessor TSP5220 tca 780
Text: TSP50C0x/1x Family Speech Synthesizer Design Manual 2000 Linear Products SPSS011D IMPORTANT NOTICE Texas Instruments and its subsidiaries TI reserve the right to make changes to their products or to discontinue any product or service without notice, and advise customers to obtain the latest version of relevant information
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TSP50C0x/1x
SPSS011D
TSP50P11
Index-17
Index-18
SPSS011D
MX 0541
EQUIVALENT TIMER IC WITH CD 4060
TCA 785 application note
equivalent transistor bc 649
TSP50C12
TCA 785
interfacing DAC with 0830 microprocessor
TSP5220
tca 780
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TSP5220
Abstract: PH 4148 S20C4 schematic diagram cga to vga converter S-8211 TCA 785 application note str 1195 tca 780 tsp50c10 ph 4148 diode
Text: TSP50C0x/1x Family Speech Synthesizer Design Manual SPSU011B May 1994 IMPORTANT NOTICE Texas Instruments TI reserves the right to make changes to its products or to discontinue any semiconductor product or service without notice, and advises its customers to obtain the latest
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TSP50C0x/1x
SPSU011B
TSP5220
PH 4148
S20C4
schematic diagram cga to vga converter
S-8211
TCA 785 application note
str 1195
tca 780
tsp50c10
ph 4148 diode
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2761 l
Abstract: TAA2761A TAAS61A TCA325A k 2761 A 2761 I TAA2761 taa761a TAA 2761 A tca325
Text: Internationale Vergleichstypen: T C A 3 1 1 A , T C A 3 1 5 A , TGA321A» TCÄ325A» TCA 331 A, TCA 335 A, TÄÄ 761 A, TÄÄ 765 A, TAAS61A, TAA8S5A» TAÄ 2761 A, TAÄ 2765 A, TAÄ 4761 A, TÄÄ 4785 A Einfache, doppelte oder vierfache Operatiosisveretirker
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TGA321A»
TAAS61A,
B4781
B76109X2
8761D
S761D
S76110X2
2761 l
TAA2761A
TAAS61A
TCA325A
k 2761
A 2761 I
TAA2761
taa761a
TAA 2761 A
tca325
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Untitled
Abstract: No abstract text available
Text: Dual Power Operational Amplifier TCA 2465 Preliminary Data Bipolar 1C Type Ordering Code Package TCA 2465 Q 67000-A8109 P-SIP-9 The TCA 2465 is a dual power op amp in a P-SIP-9 package. The 1C contains two identical op amps, each supplying a high output current of 2.5 A at supply voltages between ± 3 V
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67000-A8109
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TK1120
Abstract: TCA 700 y BTW48-1200 TK140 BTW48-800 YJ 1100 6 TK1120V 2N5205 TCA 700 TK160V
Text: THYRISTORS , thyristors * Valeurs limites Caractéristiques électriques Absolute max. ratings Electrical charactéristics 'o A 35 A eff (rms) 2N5204 2N5205 2N5206 2N5207 35 A eff (rms) TS TS TS TS TS TS TS cecee xy xy xy :C? / 22.5 22.5 22.5 22.5 22.5 22.5
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2N5204
2N5205
2N5206
2N5207
TK110
TK120
TK140
TK160
TK180
TK1100V
TK1120
TCA 700 y
BTW48-1200
BTW48-800
YJ 1100 6
TK1120V
TCA 700
TK160V
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7328200AS/SG is a 8M x 32 bits Dynamic RAM MODULE which is assembled 16 pieces of 4M x 4bit DRAMs in 24 pin SOJ package on both sides the printed circuit board with decoupling capacitors. The GMM7328200AS/SG is optimized for
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GMM7328200AS/SG
GMM7328200AS/SG
GMM7328200AS
GMM7328200ASG
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25C945
Abstract: c945 c945 transistor c945 P c945 npn C945 NPN transistor NPN C945 transistor c945 c945 g dj rw
Text: 045 NPN Transistor« MÀXIMUM KAtlSCiS H nktf rrJgflnf rmulnr Ubttn^ CrJoOw-Ou* totogù EniTWf-B*M 1*4 * C-^lnctai Curmrl Contmuotia Slf mkJJ VCEO Vc b VÉ60 'C V * 50 ¡fi 5.D 1» Unti Ytt v« ViJc rtXA« O w rw rtw IitJG » TrtH D m » r>t 5JMl<n Ffl.fi B o,tc.;iJ
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25C945
c945
c945 transistor
c945 P
c945 npn
C945 NPN transistor
NPN C945
transistor c945
c945 g
dj rw
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Untitled
Abstract: No abstract text available
Text: @ LG Semicon. Co. LTD. Description Features The GMM7408210BS/SG is an 8M x 40 bits D y n a m ic R A M M O D U L E w h ic h is assembled 20 pieces o f 4M x 4 bit EDO DRAMs in 24 26 pin SOJ package on both side the printed circuit board with decoupling capacitors. The GM M 7408210BS/SG is
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GMM7408210BS/SG
7408210BS/SG
GMM7408210BS/SG
GMM7408210BS
GMM7408210BSG
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MSM5117400
Abstract: MSM5117400B
Text: O K I Semiconductor MSM5 1 17400B_ E2G0035-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5117400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117400B achieves high integration, high-speed operation, and low-power
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E2G0035-17-41
MSM5117400B_
304-Word
MSM5117400B
26/24-pin
MSM5117400
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information applikation
Abstract: information applikation mikroelektronik Mikroelektronik Information Applikation applikation heft A109D mikroelektronik DDR a 109 opv VEB mikroelektronik schaltungen 861 TAA 761 A
Text: m D ^ a r ^ i e l e l Information Applikation - c t e n a n i l - c m ik ^ o e le k t3r*anik Information Applikation Heft 22: OPERATIONS-VERSTÄRKER- IS Teil 2 veb halbleiterwepk fran k fu rt/o d er im v e b k o m b i n a t m ik ro e le k tro n U c KAMMER DER TECHNIK
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000000C
Abstract: No abstract text available
Text: I» LG Semicon. Co. LTD. Description Features The GMM7362000ES/SG is a 2M x 36 bits D y n a m ic R A M M O D U L E w h ic h is assembled 16 pieces of 1M x 4bit DRAMs in 20/26 pin SOJ package, and 8 pieces of 1M x 1 bit DRAMs on the printed circuit board w ith decoupling capacitors. The
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GMM7362000ES/SG
7362000E
GMM7362000ES/SG
000000C
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Untitled
Abstract: No abstract text available
Text: GM71V17803C GM71VS17803CL LG Semicon Co.,Ltd. 2,097,152 WORDS x 8RAM BIT CMOS DYNAMIC Description Features The GM71V S 17803C/CL is the new generation dynamic RAM organized 2,097,152 x 8 bit. GM71V(S)17803C/CL has realized higher density, higher performance and various
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GM71V17803C
GM71VS17803CL
GM71V
17803C/CL
28pin
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k3882
Abstract: TAA 981 E25C5 TC8066PB sn 8400 sn 8408 selen-gleichrichter Halbleiterbauelemente DDR A109D SY 170
Text: [ n r D D lk D ^ i^ B lB k f a n a n ilK Halbleiter-Bauelemente Kurzinformation D ie M ik ro e le k tro n ik e rw e is t sich in te rn a tio n a l m e h r u n d m eh r a ls e in e n ts c h e id e n d e r F a k to r be i d e r D u rc h s e tz u n g d e s w isse n s c h a ftlic h -te c h n is c h e n F o rts c h ritte s a lle r B ere ich e d e r W irts c h a ft un d
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msm5116405b
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116405B_ E 2 G 0 0 3 7 -1 7 -4 1 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5116405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116405B achieves high integration, high-speed operation, and low-power
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E2G0037-17-41
MSM5116405B_
304-Word
MSM5116405B
26/24-pin
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ir 326h
Abstract: No abstract text available
Text: DATASHEET PM PMC-2000313 ISSUE 2 RELEASED ~ PMC-Sierra, Inc. PM7339 S/ u n i - c d b ~ SATURN USER NETWORK INTERFACE CELL DELINEATION BLOCK PM7339 S/UNI-"1 CDB S/UNI-CDB SATURN USER NETWORK INTERFACE FOR QUAD CELL DELINEATION BLOCK DATASHEET PROPRIETARY AND CONFIDENTIAL
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PMC-2000313
PM7339
PM7339
PMCSS00245
ir 326h
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MH1SS1
Abstract: TESLA mh 7400 MH 7404 mh 7400 tesla cdb 838 tda 7851 L 741PC TDB0124DP tda 4100 TDA 7851 A
Text: m ö lk ^ o e le l-c te n a n il-c Information Applikation RGW Typenübersicht Vergleich Teil 2: RGW M iM U Z A U l KÉD lnrüÖC=SraO Information Applikation HEFT 50 RGW Typenübersicht + Vergleich Teil 2: RGW wob Halbleiterwerk Frankfurt /oder bt r iab im v«b kombinat mikrootektronik
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MSM5116400B
Abstract: 5116400
Text: O K I Semiconductor MSM5 116 4 0 0 B_ E2G0033-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE DESCRIPTION The MSM5116400B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5116400B achieves high integration, high-speed operation, and low-power
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MSM5116400B
304-Word
E2G0033-17-41
MSM5116400B
/24-pin
5116400
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DD 128 D transistor
Abstract: DD 128 transistor C68R
Text: C D P 68H C 68R 1 CDP68HC68R2 33 H a r r is CMOS 128 Word CDP68HC68R1 and 256 Word (CDP68HC68R2) by 8-B it Static RAMs J a n u a ry 1991 P in o u t Features • Fully Static Operation P A C KAG E TYPE E TOP VIEW • Operating Voltge R a n g e .3V to 5.5V
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CDP68HC68R2
CDP68HC68R1)
CDP68HC68R2)
CDP68HC68R1,
CDP68H
C68R2
377I6
DD 128 D transistor
DD 128 transistor
C68R
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DG34B
Abstract: No abstract text available
Text: KM44C4 1 04B S CMOS DR AM ELECTRONICS 4M x 4 Bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 4 bit Extended Data Out CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row, so called Hyper Page Mode. Power
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KM44C4
KM44C4104BS
D034b64
DG34B
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MSM5117405
Abstract: MSM5117405B
Text: O K I Semiconductor MSM5 1 17405B_ E2G0039-17-41 4,194,304-Word x 4-Bit DYNAMIC RAM : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The MSM5117405B is a 4,194,304-word x 4-bit dynamic RAM fabricated in Oki's silicon-gate CMOS technology. The MSM5117405B achieves high integration, high-speed operation, and low-power
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E2G0039-17-41
MSM5117405B_
304-Word
MSM5117405B
26/24-pin
MSM5117405
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MSC23V26457SA-60BS8
Abstract: MSC23V26457SA-70BS8 MSC23V26457TA-60BS8 MSC23V26457TA-70BS8
Text: O K I Semiconductor_ M SC23 V26457T A-xxBS8/ M SC23V26457SA-xxBS8 2,097,152-Word x 64-Bit DRAM MODULE : FAST PAGE MODE TYPE WITH EDO DESCRIPTION The Oki M SC23V26457TA-xxBS8/M SC23V26457SA-xxBS8 is a fully decoded 2,097,152-word x 64-bit CMOS dynam ic random access memory composed of eight 16-Mb DRAM s 2M x 8 in
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MSC23V26457TA-xxBS8/
MSC23
V26457SA-xxBS8
152-Word
64-Bit
MSC23V26457TA-xxBS8/MSC23V26457SA-xxBS8
16-Mb
168-pin
MSC23V26457SA-60BS8
MSC23V26457SA-70BS8
MSC23V26457TA-60BS8
MSC23V26457TA-70BS8
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