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    TC58NYG2S0HBAI6 Price and Stock

    KIOXIA TC58NYG2S0HBAI6

    IC FLASH 4GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG2S0HBAI6 Tray 170 1
    • 1 $4.63
    • 10 $4.109
    • 100 $3.68988
    • 1000 $3.30312
    • 10000 $3.23416
    		Buy Now
    Mouser Electronics TC58NYG2S0HBAI6 313
    • 1 $3.18
    • 10 $2.97
    • 100 $2.97
    • 1000 $2.86
    • 10000 $2.86
    		Buy Now

    Others TC58NYG2S0HBAI6

    INSTOCK
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Chip 1 Exchange TC58NYG2S0HBAI6 65,000
    • 1 -
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    • 10000 -
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    TC58NYG2S0HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58NYG2S0HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 4G PARALLEL 67VFBGA Original PDF

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    Abstract: No abstract text available
    Text: TC58NYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S0HBAI6 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG2S0HBAI6 TC58NYG2S0HBAI6 2048blocks. 4352-byte 2013-07-05C