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    TC58NYG0S3HBAI6 Price and Stock

    KIOXIA TC58NYG0S3HBAI6

    IC FLASH 1GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG0S3HBAI6 Tray 266 1
    • 1 $3.08
    • 10 $2.739
    • 100 $2.46
    • 1000 $2.16439
    • 10000 $1.98655
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    Mouser Electronics TC58NYG0S3HBAI6
    • 1 $3.05
    • 10 $2.46
    • 100 $2.46
    • 1000 $2.46
    • 10000 $2.46
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    Toshiba America Electronic Components TC58NYG0S3HBAI6

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    Bristol Electronics TC58NYG0S3HBAI6 343
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    ComSIT USA TC58NYG0S3HBAI6 30
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    TC58NYG0S3HBAI6 Datasheets (1)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    TC58NYG0S3HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 1G PARALLEL 67VFBGA Original PDF

    TC58NYG0S3HBAI6 Datasheets Context Search

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    Untitled

    Abstract: No abstract text available
    Text: TC58NYG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI6is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		PDF TC58NYG0S3HBAI6 TC58NYG0S3HBAI6is 688bits) 1024blocks. 2176-byte 2012-08-31C

    TC58NVG2S0FTA00

    Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25
    Text: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial


    Original     		PDF 48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25