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    TC58NYG Price and Stock

    KIOXIA TC58NYG0S3HBAI6

    IC FLASH 1GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG0S3HBAI6 Tray 301 1
    • 1 $3.1
    • 10 $2.788
    • 100 $2.44625
    • 1000 $2.35728
    • 10000 $2.19505
    		Buy Now
    Mouser Electronics TC58NYG0S3HBAI6
    • 1 $3.01
    • 10 $2.71
    • 100 $2.71
    • 1000 $2.71
    • 10000 $2.71
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    KIOXIA TC58NYG0S3HBAI4

    1GB NAND SLC 24NM BGA I TEMP (EE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG0S3HBAI4 Tray 210 1
    • 1 $3.85
    • 10 $3.461
    • 100 $3.2724
    • 1000 $2.4143
    • 10000 $1.86163
    		Buy Now
    Mouser Electronics TC58NYG0S3HBAI4
    • 1 $3.14
    • 10 $2.83
    • 100 $2.83
    • 1000 $2.83
    • 10000 $2.83
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    KIOXIA TC58NYG2S0HBAI6

    IC FLASH 4GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG2S0HBAI6 Tray 170 1
    • 1 $3.18
    • 10 $2.884
    • 100 $2.6875
    • 1000 $2.6875
    • 10000 $2.6875
    		Buy Now
    Mouser Electronics TC58NYG2S0HBAI6 313
    • 1 $4.98
    • 10 $3.95
    • 100 $3.94
    • 1000 $3.78
    • 10000 $3.59
    		Buy Now

    KIOXIA TC58NYG1S3HBAI6

    IC FLASH 2GBIT PARALLEL 67VFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG1S3HBAI6 Tray 143 1
    • 1 $3.81
    • 10 $3.459
    • 100 $3.01738
    • 1000 $2.89652
    • 10000 $2.75372
    		Buy Now
    Mouser Electronics TC58NYG1S3HBAI6 142
    • 1 $3.78
    • 10 $3.36
    • 100 $3.36
    • 1000 $3.36
    • 10000 $3.36
    		Buy Now

    KIOXIA TC58NYG2S0HBAI4

    IC FLASH 4GBIT 63TFBGA
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey TC58NYG2S0HBAI4 Tray 110 1
    • 1 $6.5
    • 10 $5.841
    • 100 $5.522
    • 1000 $4.07414
    • 10000 $3.26422
    		Buy Now
    Mouser Electronics TC58NYG2S0HBAI4 145
    • 1 $6.5
    • 10 $5.52
    • 100 $5.52
    • 1000 $4.07
    • 10000 $3.43
    		Buy Now
    Find more TC58NYG price and stock on Findchips.com

    TC58NYG Datasheets (6)

    Part ECAD Model Manufacturer Description Curated Type PDF
    TC58NYG0S3HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 1G PARALLEL 67VFBGA Original PDF
    TC58NYG1S3EBAI4 Toshiba TC58NYG1S3 - IC FLASH 1.8V PROM, Programmable ROM Original PDF
    TC58NYG1S3HBAI4 Toshiba Memory America Integrated Circuits (ICs) - Memory - 2G NAND SLC 24NM BGA Original PDF
    TC58NYG1S3HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 2G PARALLEL 67VFBGA Original PDF
    TC58NYG2S0HBAI4 Toshiba Memory America Integrated Circuits (ICs) - Memory - 4GB SLC NAND 24NM BGA 9X11 1.8V Original PDF
    TC58NYG2S0HBAI6 Toshiba Memory America Integrated Circuits (ICs) - Memory - IC FLASH 4G PARALLEL 67VFBGA Original PDF

    TC58NYG Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    TC58NYG0S3E

    Abstract: TC58NYG0S3ETA00 TC58NYG0S
    Text: TC58NYG0S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3ETA00 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETA00 TC58NYG0S

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG1S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3HBAI6 is a single 1.8V 2 Gbit (2,281,701,376 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  2048blocks.


    Original     		PDF TC58NYG1S3HBAI6 TC58NYG1S3HBAI6 2048blocks. 2176-byte 2013-01-18C

    TC58NYG1S3EBAI4

    Abstract: P-TFBGA63-0911-0
    Text: TC58NYG1S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3EBAI4 TC58NYG1S3E 2048blocks. 2112-byte 2012-09-01C TC58NYG1S3EBAI4 P-TFBGA63-0911-0

    tc58nyg1s3ebai5

    Abstract: TC58NYG1
    Text: TC58NYG1S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3EBAI5 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C tc58nyg1s3ebai5 TC58NYG1

    TC58NYG0S3ETAI0

    Abstract: TC58NYG0S
    Text: TC58NYG0S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3ETAI0 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NYG0S3ETAI0 TC58NYG0S

    TC58NYG2S3ETAI0

    Abstract: toshiba NAND ID code
    Text: TC58NYG2S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NYG2S3ETAI0 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NYG2S3ETAI0 toshiba NAND ID code

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG2S0HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S0HBAI6 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG2S0HBAI6 TC58NYG2S0HBAI6 2048blocks. 4352-byte 2013-07-05C

    TC58NVG0S3EBA

    Abstract: TC58NYG0S3EBAI4 TC58NYG0S3E P-TFBGA63-0911-0 TC58NYG0S R/PA15
    Text: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3EBAI4 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C TC58NVG0S3EBA TC58NYG0S3EBAI4 P-TFBGA63-0911-0 TC58NYG0S R/PA15

    TC58NYG1S3ETA00

    Abstract: TC58NYG1 TC58NYG1S3
    Text: TC58NYG1S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3ETA00 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C TC58NYG1S3ETA00 TC58NYG1 TC58NYG1S3

    TC58NVG2S3

    Abstract: TC58NYG2S3ETA00 TC58NVG2S3ET tc58nvg2s TC58NYG2S3E tc58nvg tc58nvg2 tc58nvg2s3e
    Text: TC58NYG2S3ETA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NYG2S3ETA00 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C TC58NVG2S3 TC58NYG2S3ETA00 TC58NVG2S3ET tc58nvg2s tc58nvg tc58nvg2 tc58nvg2s3e

    TC58NYG1S3ETAI0

    Abstract: 103A15
    Text: TC58NYG1S3ETAI0 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 2 GBIT 256M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG1S3E is a single 1.8V 2 Gbit (2,214,592,512 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG1S3ETAI0 TC58NYG1S3E 2048blocks. 2112-byte 2011-03-01C TC58NYG1S3ETAI0 103A15

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG3S0FBAID TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 8 GBIT 1G x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG3S0F is a single 1.8V 8 Gbit (9,076,473,856 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 232) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NYG3S0FBAID TC58NYG3S0F 4096blocks. 4328-byte 2013-09-10C

    TC58NYG2S3EBAI5

    Abstract: No abstract text available
    Text: TC58NYG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  64) bytes  64 pages  4096blocks.


    Original     		PDF TC58NYG2S3EBAI5 TC58NYG2S3E 4096blocks. 2112-byte TC58NYG2S3EBAI5

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG2S0HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S0HBAI4 is a single 1.8V 4 Gbit (4,563,402,752 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 256) bytes × 64 pages × 2048blocks.


    Original     		PDF TC58NYG2S0HBAI4 TC58NYG2S0HBAI4 2048blocks. 4352-byte 2013-07-05C

    toshiba TC58NVG

    Abstract: NAND read disturb tc58NVG2S3
    Text: TC58NYG2S3EBAI5 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S3E is a single 1.8V 4 Gbit (4,429,185,024 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 4096blocks.


    Original     		PDF TC58NYG2S3EBAI5 TC58NYG2S3E 4096blocks. 2112-byte 2010-07-13C toshiba TC58NVG NAND read disturb tc58NVG2S3

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.


    Original     		PDF TC58NYG2S0FBAI4 TC58NYG2S0F 2048blocks. 4320-byte

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG0S3EBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1 GBIT 128M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3E is a single 1.8V 1 Gbit (1,107,296,256 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048 + 64) bytes × 64 pages × 1024blocks.


    Original     		PDF TC58NYG0S3EBAI4 TC58NYG0S3E 1024blocks. 2112-byte 2011-03-01C

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG0S3HBAI6 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI6is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		PDF TC58NYG0S3HBAI6 TC58NYG0S3HBAI6is 688bits) 1024blocks. 2176-byte 2012-08-31C

    Untitled

    Abstract: No abstract text available
    Text: TC58NYG0S3HBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 1G BIT 128M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG0S3HBAI4 is a single 1.8V 1Gbit (1,140,850,688bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (2048  128) bytes  64 pages  1024blocks.


    Original     		PDF TC58NYG0S3HBAI4 TC58NYG0S3HBAI4 688bits) 1024blocks. 2176-byte 2012-10-01C

    sandisk eMMC 4.41

    Abstract: toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc
    Text: An addendum for this document is available. See Document ID#: IMX25RMAD. i.MX25 Multimedia Applications Processor Reference Manual Supports i.MX251 MCIMX251 i.MX253 (MCIMX253) i.MX255 (MCIMX255) i.MX257 (MCIMX257) i.MX258 (MCIMX258) IMX25RM Rev. 1 06/2009


    Original     		PDF IMX25RMAD. MX251 MCIMX251) MX253 MCIMX253) MX255 MCIMX255) MX257 MCIMX257) MX258 sandisk eMMC 4.41 toshiba emmc 4.4 spec SANDISK inand Samsung eMMC 4.41 sandisk emmc 4.5 bcm 4330 programming Guide Sandisk iNAND eMMC toshiba emmc 4.4 linux toshiba emmc 4.4.1 spec sandisk inand extreme emmc

    THGBM4G4D1HBAIR

    Abstract: TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR
    Text: SEMICONDUCTOR GENERAL CATALOG Memories and Storage Devices NAND Flash Memory 1 2011/9 SCE0004L NAND Flash Memory SLC Small Block Capacity 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 512 Mbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits 1 Gbits Part Number


    Original     		PDF SCE0004L TC58DVM92A5TA00 TC58DVM92A5TAI0 TC58DVM92A5BAJ3 TC58DYM92A5TA00 TC58DYM92A5TAI0 TC58DYM92A5BAJ3 TC58DVG02A5TA00 TC58DVG02A5TAI0 TC58DVG02A5BAJ4 THGBM4G4D1HBAIR TH58TVG5S2FBA49 thgbm4g5d1hbair TC58NVG3S0FTA00 TH58TAG7S2FBA89 TC58DVG3S0ETAI0 TH58TAG6S2FBA89 TH58NVG4S0FTA20 TH58NVG6S2FTA20 THGBM4G6D2HBAIR

    TC58NVG2S0FTA00

    Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25
    Text: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial


    Original     		PDF 48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25

    toshiba TH58NVG*D

    Abstract: No abstract text available
    Text: NAND Flash Memory SLC Large Capacity Product list of NAND Flash Memory SLC Large Capacity Block Size: 256K Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number


    Original     		PDF TC58NVG3S0FBAID 48-P-1220- TC58NVG3S0FTA00 TC58NVG3S0FTAI0 P-TFBGA63-1011- TC58NYG3S0FBAID TH58NVG4S0FTA20 TH58NVG4S0FTAK0 toshiba TH58NVG*D

    ARM1136EJ-S

    Abstract: MCIMX35 ARM1136ej IMX35RM IMX35RMAD TC58NVG4D TC58NVG4 LPG GAS SENSOR din 74324 emmc spec
    Text: An addendum for this document is available. See Document ID#: IMX35RMAD. i.MX35 MCIMX35 Multimedia Applications Processor Reference Manual Supports i.MX35 (MCIMX35) i.MX351 (MCIMX351) i.MX353 (MCIMX353) i.MX355 (MCIMX355) i.MX356 (MCIMX356) i.MX357 (MCIMX357)


    Original     		PDF IMX35RMAD. MCIMX35) MX351 MCIMX351) MX353 MCIMX353) MX355 MCIMX355) MX356 ARM1136EJ-S MCIMX35 ARM1136ej IMX35RM IMX35RMAD TC58NVG4D TC58NVG4 LPG GAS SENSOR din 74324 emmc spec