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KIOXIA TC58NVG2S0FTA00 IC FLASH 4GBIT PARALLEL 48TSOP I
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	TC58NVG2S0FTA00	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Avnet Americas	TC58NVG2S0FTA00	Tray		14 Weeks	96	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Toshiba America Electronic Components TC58NVG2S0FTA00 4 GBIT (512M X 8 BIT) CMOS NAND E2PROM EEPROM, 512MX8, Parallel, CMOS, PDSO48
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
ComSIT USA	TC58NVG2S0FTA00		182			1 - 10 - 100 - 1000 - 10000 -	Get Quote

TC58NVG2S0FTA00 Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF
TC58NVG2S0FTA00		Toshiba	Memory, Integrated Circuits (ICs), IC FLASH 4GBIT 25NS 48TSOP		Original	PDF

TC58NVG2S0FTA00 Datasheets Context Search

Catalog Datasheet	MFG & Type	Document Tags	PDF
TC58NVG2S0FTA00 Abstract: No abstract text available Text: TC58NVG2S0FTA00 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M x 8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096 + 224) bytes × 64 pages × 2048blocks.	Original	TC58NVG2S0FTA00 TC58NVG2S0F 2048blocks. 4320-byte TC58NVG2S0FTA00	PDF
TC58NVG2S0FTA00 Abstract: TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25 Text: NAND Flash Memory SLC Middle Capacity Product list of NAND Flash Memory SLC Middle Capacity Program Access Time Capacity bit Tech. Page Block Power Operating Node Size Size Supply Temperature nm bit bit V °C /Erase Time typ. I/O Package Part Number Serial	Original	48-P-1220- TC58NVM9S3ETAI0 TC58NVM9S3EBAI4 TC58NVM9S3EBAI6 TC58NYM9S3EBAI4 TC58NYM9S3EBAI6 TC58DVG02D5TA00 TC58NVG2S3EBAI5 P-TFBGA63-1013- TC58NYG2S3EBAI5 TC58NVG2S0FTA00 TC58NVG2S3EBAI5 Toshiba NAND 224 LM3661TL-1.25	PDF
Untitled Abstract: No abstract text available Text: TC58NVG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NVG2S0F is a single 3.3V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.	Original	TC58NVG2S0FBAI4 TC58NVG2S0F 2048blocks. 4320-byte	PDF
Untitled Abstract: No abstract text available Text: TC58NYG2S0FBAI4 TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS 2 4 GBIT 512M  8 BIT CMOS NAND E PROM DESCRIPTION The TC58NYG2S0F is a single 1.8V 4 Gbit (4,529,848,320 bits) NAND Electrically Erasable and Programmable Read-Only Memory (NAND E2PROM) organized as (4096  224) bytes  64 pages  2048blocks.	Original	TC58NYG2S0FBAI4 TC58NYG2S0F 2048blocks. 4320-byte	PDF
TC58DVG3S0ETA00 Abstract: TH58DVG4S0ETA20 THGBM2G9D8FBAIF TC58NVG2S0FTA00 THGBM2G6D2FBAI9 THGBM2G7D4FBAI9 TC58NVG2S0 TH58DVG5S0ETA20 THGBM THGBM2T0DBFBAIF Text: 東芝半導体製品総覧表 2011 年 1 月版メモリ／ストレージデバイス NAND 型フラッシュメモリ 1 2011/1 SCJ0004R NAND 型フラッシュメモリ SLC 小ブロック容量 512 Mbits 512 Mbits 1 Gbits 1 Gbits 品ページサイズ	Original	SCJ0004R TC58DVM92A5TA00 TC58DVM92A5BAJ3 TC58DVG02A5TA00 TC58DVG02A5BAJ4 48-P-1220-0 P-TFBGA63-0813-0 TC58DVG3S0ETA00 TH58DVG4S0ETA20 THGBM2G9D8FBAIF TC58NVG2S0FTA00 THGBM2G6D2FBAI9 THGBM2G7D4FBAI9 TC58NVG2S0 TH58DVG5S0ETA20 THGBM THGBM2T0DBFBAIF	PDF